0Q172 Search Results

hr2399

Abstract: 7 segment display duplex led type TLR2399 TLR4363 TLR2369 TLR4393
Contextual Info: j i~J TOITSSO TOSHIBA {D IS CRETE /OPT O} 99D 17284 9097250 TOSHIBA DISCRETE/OPTO) 0Q172ai DT-HI-B3 TLR2399, TLR4393, TLR2369, TLR4363 RED COLOR 4 DIGITS LED DISPLAY . For Duplex Drive connection • 18 mi (0.7") character height« each segment represents diffused and uniformly

Contextual Info: blE ]> • bEM^flES 0Q1727D BbT ■ M I T I MITSUBISHI LSIs M5M5258P, J-35, -45, -55 2 6 2 1 4 4 -B IT 6 5 5 3 6 -W O R D BY 4 -B IT CMOS STATIC RAM MITSUBISHI ( HEPIORY/ASIC ) DESCRIPTION The M 5M 5258 is a fa m ily o f 65536 w ord by 4 -b it static RAMs, fabricated w ith the high-performance CMOS silicon-

BA 5053

Contextual Info: MITSUBISHI RF POWER MODULE bSMTôÉ?1} 0Q17273 l t a - - h bTa " M57788L 400-430MHZ, 12.5V, 40W, FM MOBILE RADIO OUTLINE DRAWING Dimansions in mm BLOCK DIAGRAM > © hK >M > hhi> PIN : Pin : RF INPUT @VCC1 : 1st. DC SUPPLY @VCC2 : 2nd. DC SUPPLY 0VCC3 : 3rd. DC SUPPLY

M57786EL

Contextual Info: 0Q1725Ö 3 e] ! • MITSUBISHI RF POWER MODULE M57786EL 300-330MHZ, 7.2V, 6W, FM PORTABLE RADIO BLOCK DIAGRAM Dimensions in mm OUTLINE DRAWING PIN : ©Pin ©VCCI VBB ®VCC2 ®P0 ®GND : RF INPUT : 1st. DC SUPPLY : BASE BIAS SUPPLY : 2nd. DC SUPPLY : RF OUTPUT

A254735

Abstract: TP2010L TP201 TP241 TP2410L
Contextual Info: SILICONIX INC SûE t • 0254735 0Q1727Û TP2010L, TP2410L P-Channel Enhancement-Mode MOS Transistors 7tlb ■ SIX fTSEconix in c o r p o r a te d 'T* vi-zs PRODUCT SUMMARY TO-92 TO-226AA V (BR)DSS PART NUMBER BOTTOM VIEW ■d (A) '" s r TP2010L -200 10

Contextual Info: 35E D • A23b320 0Q172Ô4 2 « S I P PNP Silicon Darlington transistors SMBTA 63 SIEMENS/ SPCL, SEMICONDS SM BTA64 High collector current High DC current gain Type Marking Ordering code or versions in bulk Ordering code for versions on 8 mm-tape Package

atm with an eye block diagram

Abstract: fabry perot 155 source
Contextual Info: wgm H E W L E T T mLfiM P A C K A R D SC D uplex Single M ode Transceiver Technical Data FDX1125 Features Description • SC Duplex Single Mode Transceiver • Singe +5 Volt Power Supply • Multisourced 1 x 9 Pin Configuration • Aqueous Washable Plastic

Contextual Info: Data Sheet May 1995 S t AT&T r Microelectronics DSP1610 Signal Coding Digital Signal Processor 1 Features 2 Description • 25 ns or 33 ns instruction cycle ■ 512 word boot ROM, and 4 Kword or 8 Kword downloadable dual-port RAM on-chip ■ Low-power (15 mW/MIPS typical)

Contextual Info: b 2 4 c] f l2 cì DD1 7 2 SS bö2 • MITSUBISHI RF POWER MODULE M57785H 162-175MHz, 7.2V, 7W, FM PORTABLE RADIO OUTLINE DRAWING Dimensions in mm 4 5 ± 0 .5 42 ± 1 2 - R 1 . 6 ± 0 .5 z : ¥ — - ■€ 1/1 o +1 3 © ji 0.4 ± 0.2 PIN : 5±1 9+ 1 * -

Contextual Info: 35E D • fl23b32Q GG1722S ö M S I P PNP Silicon Switching Transistors SIEM ENS/ S P C L i • • • SMBT2907 SEMIC0N] S ' High DC current gain: 0.1 to 500 mA Low collector-emitter saturation voltage Complementary types: SMBT 2222, SMBT 2222 A NPN) C Type

NEC 1701c

Abstract: b562ac NEC 1704c d1704c uPD1709CT SE-1700 LM 1709 cn UPD1709C IC 1709 CN b562a
Contextual Info: N E C ELECTRONICS INC IB DE|l.Ha75BS 0017156 8 I MOS DIGITAL INTEGRATED CIRCUIT /¿ P D 1 7 0 9 C T S IN G L E -C H IP M IC R O C O M P U T E R IN C O R P O R A T IN G LED D R IV E R and P LL F R E Q U E N C Y S Y N T H E S IZ E R The |iPD1709C T is a 4 -b it CMOS m icrocom puter fo r digital tuning, containing PLL and co ntroller in one chip

Contextual Info: DS2407 DALLAS SEMICONDUCTOR DS2407 Dual Addressable Switch Plus 1K—Bit Memory FEATURES PIN ASSIGNM ENT • Open drain PIO pins are controlled and their logic level can be determined over 1 -W ire bus for closed-loop control TO-92 TSOC PACKAGE DALLAS

bb 9790 schematic diagram

Abstract: DIGITAL GATE EMULATOR USING 8085 TDA 1006 equivalents ami equivalent gates verilog code motor 04S75 M6845 TDB 2915 KM AMI8G34S AMI8G28S
Contextual Info: Libraiy Characteristics AMERICAN MICROSYSTEMS INC. AMI8G 0.8 micron CMOS Gale Array AMI’s “AMI8Gx” series of 0.8|im gate arrays exploits a proprietary power grid and track routing architecture on a compact, channelless, sea-of-gates design to provide one

Contextual Info: DS2404 DALLAS SEMICONDUCTOR DS2404 EconoRAM Time Chip FEATURES PIN ASSIGNMENT • 4096 bits of nonvolatile dual-port memory including real time clock/calendar in binary format, program­ mable interval timer, and programmable power-on cycle counter vccnn 1

Contextual Info: MT4C16270 256K X 16 DRAM MICRON I TECHNOLOGY. INC. 256K x 16 DRAM DRAM 5V, EDO PAGE MODE FEATURES PIN ASSIGNMENT Top View • Industry-standard x l6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% power supply*

SD412

Contextual Info: INTERNATIONAL RECTIFIER b5E D • MflSS4SE G017E7S 35b PD-2.328 International S Rectifier SD41 SCHOTTKY RECTIFIER 30 Amp Major Ratings and Characteristics Description/Features Characteristics SD41 Units 'f AV Roctan9ular waveform 30 A 35/45 V A V RWM The SD41 Schottky rectifier has been optimized for very low

Contextual Info: Ordering number : EN*5609A CMOS 1C LC374100SM, ST 4 MEG 524288 wordsx 8 bits Mask ROM Internal Clocked Silicon Gate Preliminary Overview Package Dimensions The LC374100SM and LC374100ST are 524,288-word x 8-bit organization (4,194,304-bit) mask programmable

Contextual Info: 32E ÔE3b320 T> DG17207 b m S I P PZTA 42; P Z TA 43 NPN Silicon High-Voltage Transistors SIEM EN S/ SPCL-, SEM ICONDS T - - 5 3 -3 -1 • High breakdown voltage • Low collector -emitter saturation voltage • Complementary types: PZTA 92/93 PNP Marking

darm

Abstract: LM 327 CN MSM6688 MSM6788 MSM6791 0017H1S
Contextual Info: O K I Semiconductor MSM6791 DRAM INTERFACE LSI GENERAL DESCRIPTION MSM6791 can be u sed as a m em ory for w hich DRAM stores a voice data b y connecting OKI solid state recording and playback LSIs MSM6788 and MSM6688 . FEATURES • DRAM (x 1-bit configuration)

Contextual Info: Transistors General Purpose Transistor Isolated Dual Transistors UMZ1N/ IMZ1A •F e a tu re s 1) B o th • E x te r n a l dim ensions (Units: mm ) 2SA1037AK c h ip and 2 S C 2 4 1 Z K chip in U M T a n d S M T IMZ1A UMZ1N 2.0 ± 0.2 2) 0 .9 ± 0 .1 1 .9 ± 0 .2

STATIC RAM 6264

Abstract: ram 6264 Hyundai Semiconductor 6264 Hyundai 6264 DD172 CY6264
Contextual Info: CYPRESS PRELIMINARY CY6264 8K x 8 Static RAM Features active HIGH chip enable CE2 , and active LOW output enable (OE) and three-state • 55,70 ns access times drivers. Both devices have an automatic • CMOS for optimum speed/power power-down feature (CEi), reducing the

Contextual Info: • tiEMTöSl 0017Sb4 MITSUBISHI RF POWER MODULE ■ M57786M 430-470MHZ, 7.2V, 7W, FM PORTABLE RADIO OUTLINE DRAWING BLOCK DIAGRAM Dimensions in mm © —IH- H£> PIN : © P in RF INPU T ©VCCI 1st. DC SUPPLY V bb BASE BIAS SUPPLY ®VC C2 2nd. DC SUPPLY

H7057

Abstract: TI241 00003H d70f3008 p103 t020 D70F30 PD703008
Contextual Info: NEC USER'S MANUAL ¿¿PD703008 /iPD70F3008 /IPD703008Y ¿¿PD70F3008Y e NEC Corporation 1997 b427SSS DDTTQll bSfi Document No. U11969EJ1V0UM00 1st edition Date Published January 1997 N Printed in Japan ft Regional Information S om e information contained in this document may vary from country to country. Before using any N E C

Contextual Info: i T T DEVELOPMENT DATA • This data sheet contains advance information and specifications are subject to change without notice. ^ 53=131 o o i? 5 fli ^ ■ ’ BST90 Jt N AMER PHILIPS/DISCRETET S5E D -T - 37 - O S' N-CHANNEL VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended fo r