J22686 Search Results

2SB624

Abstract: 2SD596
Contextual Info: NEC SILICON TRANSISTOR 2SB624 ^3£CTR0N DEVICE AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR M IN I MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SB624 is designed fo r use in small type equipments especially recom­ in millimeters 2.8 + 0.2

NEC zener diode 35 series

Abstract: RD10PB MEC International RD12PB diode zener nec RD18P R039P RD10P RD13P RD15P
Contextual Info: _ PRELIM INARY SPECIFICA TIO N ZENER DIODES RD4.7P —RD39P 1 W POWER MINI MOLD ZENER DIODE NEC Type RD[ ] P Series are Power Mini Mold Package zener diodes possessing an allowable power dissipation of 1 watt. FEATURES OUTLINE DRAWING U n it: mm

Contextual Info: N E C E L EC T RO NI C S INC 3QE D • b4E7S2S 0 0 2 ^ 4 0 fl ■ 3 PHOTO COUPLER PS2021 PHOTO C O U P LER High Isolation Voltage Single Transistor — n ep o c s e r ie s — D E S C R IP T IO N The PS2021 is an optically coupled isolator containing a G aAs light emitting diode and an NPN silicon photo transistor.

NEC K 2500

Abstract: DAD 1000 05611 LD1104 NDL3000 laser diode for printer NEC diode J22686 6W7525
Contextual Info: ST a ^ DE|b4E7525 642 6 427525 Nfcv ODDSt.ll fi N E C TENTATIVE SPEC IFIC ATION ELECTRONICS'INC 59C 05611 7 D T-41-05 LASER DIODE ELECTRON DEVICE NDL3000 D A D ,V D APPLICA TIO N AIGaAs DOUBLE HETEROSTRUCTURE LASER DIODE DESCRIPTION NDL3000 laser diode is developed for DAD Digital Audio Disk , Video Disk optical head and non impact laser printer. The

PC1379C

Abstract: MPC1379C UPC1379C 1379c UPC-1379C UPC1379 Y C DEFLECTION PROCESSOR NEC vertical Circuit tv nec 14 tv diagram PC1379
Contextual Info: NEC ELECTRON DEVICE P R E L IM IN A R Y SP E C IFIC A TIO N BIPOLAR ANALOG INTEGRATED C IR C U IT « P C iIfg c S Y N C H R O N IZ A T IO N S IG N A L PROCESSOR FOR B /W T V A N D S M A L L -S IZ E D COLOR T V «PC 1379C is a bipolar analog integrand circuit designed for mono-chrome T V and small size color TV

TC-1482A

Abstract: TC1482 2SC1622A d18 nec marking D15 nec marking power amplifier 1482A HFE9 marking D18 2SC1622A-T2B D17
Contextual Info: SILICON TRANSISTOR ELECTRON DEVICE 2SC1622A £ AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD FEATURE PACKAGE DIMENSIONS in millimeters • High DC Current Gain: hFE = 600 TYP. VCE = 6.0 V , lc = 1.0 mA 2.8 ± 0.2 -g do

lkt 108

Abstract: 101B2 hFE CLASSIFICATION Marking B35 B34 transistor marking IAY 2SC3735 TZ marking transistor b35 NEC B34
Contextual Info: SEC SILICON TRANSISTOR ELECTRON DEVICE • 2SC3735 _ HIGH SPEED SW ITCHING NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD FEATURE PACKAGE DIMENSIONS in millimeters • High Speed: t on < 1 2 ns t0ff < 18 ns 2 .8 ± 0.2 0-65 ±8:ls 1.5 ABSOLUTE MAXIMUM RATINGS

2SC3624

Abstract: 2SC3624A
Contextual Info: SILICON TRANSISTORS EIECTBQM DEVICE 2SC3624, 2SC3624A _ AUDIO FREQUENCY AMPLIFIER, SW ITCHING NPN SILICON EPITAXIALTRANSISTO RS M INI MOLD FEATURES • High DC Current Gain : hpE = 1000 to 3200 • Low • High V EB 0: V EB0 = 15 V 2SC3624A V c E (s a t)

toko ift coil

Abstract: upc1215 2SK195 2SK49H T17C 7MC-4718N 450BL am radio station block diagram TOKO IFT upc1215v
Contextual Info: •-igjfffr*'- &Sw F ' BIPOLAR ANALOG INTEGRATED CIRCUIT P C I 2 1 5 V ELECTRONIC TUNING A M RADIO RECEIVER SILICON BIPOLAR M O NOLITHIC INTEGRATED CIRCUIT DESCRIPTION T he /uPC 1215V is a m onolithic integrated circuit th at is provided w ith the m ixer, low level oscillator, IF am plifier,

PC1401C

Abstract: UPC1401 M060 kaf 401 T-77 variable frequency control of 50 hz synchronous PCI401 ckf i1 k427 cj07
Contextual Info: N E C ELECTRONICS INC TÖ NEC r J ELECTRON DEVICE bME7SES □□1Û34D E Jf~ PRELIM INARY SPECIFICATION //PCI 401C BIPOLAR ANALOG INTEGRATED CIRCUIT N T S C C H R O M I N A N C E , L U M IN A N C E , S Y N C H R O N IZ A T IO N , AND D E F L E C T I O N C I R C U I T

1581m

Abstract: nec ps2021 PS2021 M5010
Contextual Info: PHOTO CO U PLER PS2021 PHOTO CO U PLER High Isolation Voltage Single Transistor — n epo c s e r ie s - D E S C R IP T IO N The PS2021 is an optically coupled Isolator containing a G aA s light emitting diode and an NPN silicon photo transistor. FEA TU RES

DC voltage meter

Abstract: PC1352C TP2150 pd4001 TP2300 frequency genarator circuit diagram 3 PHASE sine wave GENARATOR IC
Contextual Info: B IP O LA R ANALOG IN TEG RA TED C IR C U IT PC1352C CHROM INANCE AND LUM INANCE PROCESSOR FOR NTSC COLOR TV D ESC R IP TIO N ¿¿PC1352C is an integrated circuit foe NTSC system to process both color and luminance signals of the color televisions. It Is an

Contextual Info: NEC Fiber Optic Devices OD-9620 Resin Curing Instrument for Fiber Optics Connectors OD-9620 is designed for shortening the waiting time for bonding agent curing. This instrument is effective especially in the field. FEATURES* • • Easy handling. • 12 terminals can be set at the same

Contextual Info: SEC Fiber Optic Devices MO D -9 4 7 0 -n O D -9 4 7 0 P C - □ .iM -r O D -9 4 8 0 , 9 4 9 0 D 4 Fiber O ptics Connectors - Fiber optics connectors are used for connecting optical fibers and for coupling the optical fiber with devices. OD-9470: Pigtail or patch cord with D4 connector plug.

C1356C2

Abstract: C1356C UPC1356 UPC1356C
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT u V'T P C 1356C 2 COMPLETE PICTURE IF 1C FOR COLOR TV SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT The /iP C 13 56C 2 is a silicon m onolithic integrated circuit for PIF section in Color Television receivers. As it contains picture

F114F

Abstract: C14A CW10 ji100
Contextual Info: HIGH SP EED HIGH C U R R EN T SW ITCH IN G NPN SILIC O N T R IP L E D IFFU SED M ESA TR A N SISTO R Industrial Use DESCRIPTION Suitable for switching regulator, DC-DC converter and ultrasonic appliance applications. FEATURES PACKAGE DIMENSIONS in millimeters inches

2SJ45

Abstract: TC3345 PA33 SC-43A
Contextual Info: NEC P-CHANNEL JUN C TIO N FIELD-EFFECT TR ANSISTO R ELECTRON DEVICE 2SJ45 D E S C R IP T IO N T h e 2 S J 4 5 is designed f o r use in d riv e r stage o f A F a m p lifie r P A C K A G E D IM E N S IO N S in millimeters inches and sw itching c irc u it.

Zero-Gate Voltage Drain Current

Abstract: cd200 tc1484
Contextual Info: NEC JU NCTIO N FIELD EFFECT T R A N S IS T O R HKTRON DEVICE s H t *1 * » r * • ¿V » X ^ * * T " * V4 • ' r| ' r. FM TUNER N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR MINI MOLD FEATURES PACKAGE DIMENSIONS Low Feedback Capacitance Crss = 0.07 pF TYP.

2SK490

Abstract: NEC bldc
Contextual Info: NEC MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE 2SK490 FAST SW ITCHING N-CHANNEL SILICON POWER MOS FET INDUSTRIAL USE FEATURES PACKAGE DIMENSIONS • U n it: mm Suitable fo r switching power supplies, actuater controls, and pulse c ir­ cuits. •

uPA53C

Abstract: MPA53C open collector driving LED NEC PA53C PA53C 2083m GE500
Contextual Info: NEC TRANSISTOR ARRAY ELECTRON DEVICE M P A 53 C LED, L A M P DRIVER N P N S IL IC O N E P IT A X IA L D A R L IN G T O N T R A N S IS T O R A R R A Y DESCRIPTION The juPA53C is a m onolithic array o f five darlington transistors. This device is especially suited fo r driving LED, lamps and

2SK67A

Abstract: Zero-Gate Voltage Drain Current TC-1488
Contextual Info: NEC JUNCTION FIELD EFFECT TRANSISTOR ELECTRON DEVICE 2SK67A IMPEDANCE CONVERTOR N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS • in m illim eters inches L o w zero gate voltage dra in c u rre n t: I d s s = 2 0 0

PC1246C

Abstract: PC1246 uPC1246C 1S945 PC124 UPC1246 1246C
Contextual Info: ÊüPuLAR ANALOG INTEGRATED CIRCUIT »PC 1246C PREDRIVER FOR 3-PHASES DC BRUSHLESS MOTOR DESCRIPTION PACKAGE DIMENSIONS The juPC1246C is silicon monolithic integrated cir­ cuit developed for predriver for 3 phases DC brush less in m illim eters inches 19.4 MAX.

Contextual Info: N E C ELE CTRO NI CS INC 18 i>iJl,4H75H5 0 0 1 84 37 t, I - - .'7 MOS DIGITAL INTEGRATED C IR C U IT ¿ ¿ P D 6 1 0 5 C - 0 0 2 C M O S LSI FOR C H A R A C T E R D I S P L A Y ON S C R E E N DESCRIPTION The pPD6105C-002 is a character display CMOS LSI used in combination with a microcomputer; it displays

Contextual Info: PRELIMINARY SPECIFICATION NEC TRANSISTOR ARRAY ELECTRON DEVICE PA6118C HIGH-VOLTAGE FLUORESCENT INDICATOR PANEL DRIVER SILICON EPITAXIAL TRANSISTOR ARRAY D E S C R IP T IO N The p P A 61 18 C is a m onolithic array of eig'it independent NPN darlimgton o utp ut stages w ith a cw nm on bias supply.