0A200 Search Results

Contextual Info: CRYSTAL CLOCK OSCILLATORS Data Sheet 0504B Rev. A CMOS TCXO PJ-0A200 Series PRELIMINARY Description The PJ-0A200 Series of temperature compensated quartz crystal oscillators provide CMOS compatible signals. Features • Frequency range 10.0MHz to 52.0MHz • User specified tolerance see page 2

0A200

Abstract: SMD code PJ CODE PJ smd Pj smd diode code pj 0503A
Contextual Info: CRYSTAL CLOCK OSCILLATORS Data Sheet 0503A Rev. - CMOS TCXO PJ-0A200 Series PRELIMINARY Description The PJ-0A200 Series of temperature compensated quartz crystal oscillators provide CMOS compatible signals. Features • Frequency range 10.0MHz to 30.0MHz • User specified tolerance ±10ppm -40°C to 85°C

Contextual Info: CRYSTAL CLOCK OSCILLATORS CMOS TCXO Data Sheet 0504B Rev. B PJ-0A200 Series Description The PJ-0A200 Series of temperature compensated quartz crystal oscillators provide CMOS compatible signals. Features • Frequency range 10.0MHz to 52.0MHz • User specified tolerance see page 2

avnet

Abstract: MSP430X15X
Contextual Info: MSP430x15x, MSP430x16x, MSP430x161x MIXED SIGNAL MICROCONTROLLER SLAS368D− OCTOBER 2002− REVISED MARCH 2005 D Low Supply-Voltage Range, 1.8 V . . . 3.6 V D Ultralow-Power Consumption: D D D D D D D D D D D D D D − Active Mode: 330 µA at 1 MHz, 2.2 V

Contextual Info: MSP430F42x0 MIXED SIGNAL MICROCONTROLLER SLAS455C − MARCH 2005 − REVISED AUGUST 2005 D Low Supply-Voltage Range, 1.8 V to 3.6 V D Ultralow-Power Consumption: D D D D D D D D Active Mode: 250 µA at 1 MHz, 2.2 V Standby Mode: 1.1 µA Off Mode RAM Retention : 0.1 µA

MSP430

Abstract: cc cg1 100 278
Contextual Info: MSP430FG42x0 MIXED SIGNAL MICROCONTROLLER SLAS556A − JULY 2007 − REVISED AUGUST 2007 D Low Supply-Voltage Range, 1.8 V to 3.6 V D Ultralow-Power Consumption: D D D D D D D D D Active Mode: 250 A at 1 MHz, 2.2 V Standby Mode: 1.1 μA Off Mode RAM Retention : 0.1 μA

SLAA096b

Abstract: KDS Crystals 1 MHz stock SLAS344B SLAA138 MSP430F44X
Contextual Info: MSP430x43x, MSP430x44x MIXED SIGNAL MICROCONTROLLER SLAS344C – JANUARY 2002 – REVISED MARCH2003 D Low Supply-Voltage Range, 1.8 V to 3.6 V D Ultralow-Power Consumption: D D D D D D D D D D – Active Mode: 280 µA at 1 MHz, 2.2 V – Standby Mode: 1.1 µA

Contextual Info: MSP430x43x1, MSP430x43x, MSP430x44x1, MSP430x44x MIXED SIGNAL MICROCONTROLLER SLAS344G − JANUARY 2002 − REVISED OCTOBER 2009 D Low Supply-Voltage Range, 1.8 V to 3.6 V D Ultralow-Power Consumption: D D D D D D D D D D D − Active Mode: 280 µA at 1 MHz, 2.2 V

Contextual Info: MSP430x43x1, MSP430x43x, MSP430x44x1, MSP430x44x MIXED SIGNAL MICROCONTROLLER SLAS344G − JANUARY 2002 − REVISED OCTOBER 2009 D Low Supply-Voltage Range, 1.8 V to 3.6 V D Ultralow-Power Consumption: D D D D D D D D D D D − Active Mode: 280 µA at 1 MHz, 2.2 V

msp430f4250idlr

Contextual Info: MSP430F42x0 MIXED SIGNAL MICROCONTROLLER SLAS455D − MARCH 2005 − REVISED APRIL 2007 D Low Supply-Voltage Range, 1.8 V to 3.6 V D Ultralow-Power Consumption: D D D D D D D D Active Mode: 250 A at 1 MHz, 2.2 V Standby Mode: 1.1 μA Off Mode RAM Retention : 0.1 μA

SA452

Abstract: SA336 SA424 120R S29GL512N SA487 EE8000 a78000a7ffff c58000c5ffff SA4871
Contextual Info: Am29LV2562M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL512N supersedes Am29LV2562M and is the factory-recommended migration path. Please refer to the S29GL512N Data Sheet for specifications and ordering information. Availability of this

JS28F512M29

Abstract: js28f256m29 js28f256 JS28F512 pc28f00am29ew JS28F00AM29EW pc28f00am29 js28f00 PC28F00AM29EWHA JS28F256M29EWL
Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers

Contextual Info: MSP430F42x0 MIXED SIGNAL MICROCONTROLLER SLAS455D − MARCH 2005 − REVISED APRIL 2007 D Low Supply-Voltage Range, 1.8 V to 3.6 V D Ultralow-Power Consumption: D D D D D D D D Active Mode: 250 µA at 1 MHz, 2.2 V Standby Mode: 1.1 µA Off Mode RAM Retention : 0.1 µA

M29W128GL

Abstract: M29W128GH70 M29W128G M29W128GL7
Contextual Info: M29W128GH M29W128GL 128-Mbit 16 Mbit x8 or 8 Mbit x16, page, uniform block 3 V supply flash memory Features BGA „ Supply voltage – VCC = 2.7 to 3.6 V for program, erase, read – VCCQ = 1.65 to 3.6 V for I/O buffers – VPPH = 12 V for fast program (optional)

Contextual Info: MSP430x15x, MSP430x16x, MSP430x161x MIXED SIGNAL MICROCONTROLLER SLAS368D− OCTOBER 2002− REVISED MARCH 2005 D Low Supply-Voltage Range, 1.8 V . . . 3.6 V D Ultralow-Power Consumption: D D D D D D D D D D D D D D − Active Mode: 330 µA at 1 MHz, 2.2 V

MSP430F1611IPM

Abstract: 011Ch
Contextual Info: MSP430x15x, MSP430x16x, MSP430x161x MIXED SIGNAL MICROCONTROLLER SLAS368D− OCTOBER 2002− REVISED MARCH 2005 D Low Supply-Voltage Range, 1.8 V . . . 3.6 V D Ultralow-Power Consumption: D D D D D D D D D D D D D D − Active Mode: 330 µA at 1 MHz, 2.2 V

Contextual Info: MSP430x43x1, MSP430x43x, MSP430x44x1, MSP430x44x MIXED SIGNAL MICROCONTROLLER SLAS344G − JANUARY 2002 − REVISED OCTOBER 2009 D Low Supply-Voltage Range, 1.8 V to 3.6 V D Ultralow-Power Consumption: D D D D D D D D D D D − Active Mode: 280 µA at 1 MHz, 2.2 V

Contextual Info: MSP430F42x0 MIXED SIGNAL MICROCONTROLLER SLAS455A − APRIL 2005 D D D D D D D D Bootstrap Loader D Serial Onboard Programming, Active Mode: 250 µA at 1 MHz, 2.2 V Standby Mode: 1.1 µA Off Mode RAM Retention : 0.1 µA Five Power Saving Modes Wake-Up From Standby Mode in less

Spansion S29GL512N11

Contextual Info: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Datasheet Distinctive Characteristics Architectural Advantages

asme SA388

Abstract: gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63
Contextual Info: S29GL-M MirrorBitTM フラッシュファミリ S29GL256M，S29GL128M，S29GL064M，S29GL032M 256M ビット，128M ビット，64M ビット，および 32M ビット， 3.0V 単一電源，ページモードフラッシュメモリ 0.23µm MirrorBit プロセステクノロジ

FAA064

Abstract: SPANSION S29GL128 S29GL128 S29GL-N S29GL-P GL128N GL256N S29GL128N S29GL256N
Contextual Info: S29GL-N MirrorBit Flash Family with Alternative BGA Layout S29GL256N, S29GL128N 256 Megabit and 128 Megabit 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology S29GL-N Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion

120R

Abstract: C8800
Contextual Info: Am29LV2562M Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

Contextual Info: FINAL A M D ii Am28F010A 1 Megabit 128 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Mem ory with Embedded Algorithm s DISTINCTIVE CHARACTERISTICS • ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ Embedded Erase Electrical Bulk Chip Erase High performance

EN25QH

Abstract: 1AEF00 cFeon* SPI Flash
Contextual Info: EN25QH256 EN25QH256 256 Megabit Serial Flash Memory with 4Kbyte Uniform Sector FEATURES • Single power supply operation - Full voltage range: 2.7-3.6 volt • Serial Interface Architecture - SPI Compatible: Mode 0 and Mode 3 • 256 M-bit Serial Flash - 256 M-bit/32,768 K-byte/131,072 pages