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    BUZ356

    Abstract: No abstract text available
    Text: N AMER PHIL I P S / D I S CR E T E ObE D PowerMOS transistor • bbS3T31 0014822^2 BUZ356 r=-si-i3 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF bbS3T31 BUZ356 T0218AA; 0D14flEb T-39-13 tbS3T31 bb53c BUZ356