0D14SDS Search Results

HCTS541

Abstract: qml-38535 qml38535
Contextual Info: REVISIONS LTR DATE DESCRIPTION APPROVED Y R -M O -D A REV SHEET REV SHEET 15 16 REV STATUS OF SHEETS PM IC N/A STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE REV SHEET 1 2 3 4

Contextual Info: N AMER PHILIPS/DISCRETE QbE D • Power MOS transistor b{353^31 0014500 5 ■ BUZ42 ” “ T -3 7 -\l May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies