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    2SK1267

    Abstract: SC-65
    Text: Power F-MOS FET 2SK1267 2SK1267 Silicon N-channel Power F-MOS FET Package Dimensions • Features • Low ON resistan ce Rds on : R DS (on) 1 = 0 .07ft (typ.) Unit: mm • High switching rate : tf= 180ns (typ.) 1 5 .5 m ax . • No secondary breakdown 13.5max.


    OCR Scan     		PDF 2SK1267 180ns 0D171ba -25tH 2SK1267 SC-65