2SK1267 Search Results

2SK1267

Abstract: SC-65
Contextual Info: Power F-MOS FET 2SK1267 2SK1267 Silicon N-channel Power F-MOS FET Package Dimensions • Features • Low ON resistan ce Rds on : R DS (on) 1 = 0 .07ft (typ.) Unit: mm • High switching rate : tf= 180ns (typ.) 1 5 .5 m ax . • No secondary breakdown 13.5max.

2SK12

Abstract: 2SK1267 SC-65 panasonic 2SC Scans-002934
Contextual Info: Power F-MOS FET 2SK1267 2SK12Ó7 Silicon N-channel Power F-MOS FET • Features Package Dimensions • Low ON re sistan c e RDS on : RDS (on) l = 0 .0 7 fl (typ.) • High switching ra te : tf= 180ns (typ.) Unit: mm 15.5max. 13.5max. • No secondary breakdow n

MA164

Abstract: MA153 2SK1267 SC-59A
Contextual Info: 2SK1267 Switching Diodes MA164 Silicon epitaxial planer type 2.8 –0.3 +0.25 1.45 +0.1 2 MA153 type with reverse wiring series connection +0.1 0.16 –0.06 0.8 1.1 –0.1 +0.2 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low

Contextual Info: 2SK1267 Switching Diodes MA164 Silicon epitaxial planer type 2.8 –0.3 +0.25 M Di ain sc te on na tin nc ue e/ d 2 +0.1 0.16 –0.06 0.8 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo

MA162

Abstract: F056 MA-150 MA150
Contextual Info: 2SK1267 Switching Diodes MA150, MA161, MA162, MA162A Silicon epitaxial planer type For switching circuits 1 • Features ● Small capacity between pins, Ct ■ Absolute Maximum Ratings Ta= 25˚C Symbol Rating MA150 Repetitive peak reverse voltage MA161

m4l marking

Contextual Info: 2SK1267 Switching Diodes MA200A Silicon epitaxial planer type Unit : mm For switching circuits +0.2 2.8 –0.3 1.45 1 3 +0.1 0.4 –0.05 +0.2 0.65±0.15 0.95 2.9 –0.05 1.9±0.2 of a soft recovery type M Di ain sc te on na tin nc ue e/ d ● trr reverse current IR, with extremely small leakage current

2SK1267

Abstract: SC-65 D 1169 25
Contextual Info: P ow er F-MOS FET 2SK1267 2SK1267 Silicon N-channel Power F-MOS FET Package Dimensions • Features • Low ON resista n ce R » o n : R t>; (on) 1 - 0 .0 7 il (typ.) Unt: mm • High sw itching ra te : ti = 180n s (ty p .) • No secondary breakdown • High breakdown voltage

Contextual Info: 2SK1267 Switching Diodes MA200A Silicon epitaxial planer type Unit : mm For switching circuits +0.2 2.8 –0.3 1.45 1 3 +0.1 0.4 –0.05 +0.2 of a soft recovery type 0.65±0.15 0.95 2.9 –0.05 1.9±0.2 ● trr reverse current IR, with extremely small leakage current

Contextual Info: 2SK1267 Power F-MOS FETs 2SK1267 Silicon N-Channel Power F-MOS Unit : mm • Features ON-resistance RDS on : R DS(on)1= 0.07Ω(typ) ■ Applications ● DC-DC converter ● Non-contact ● Solenoid ● Motor 4.0±0.1 4.0±0.1 drive 20.0±0.3 ● Low-voltage

Contextual Info: 2SK1267 Switching Diodes MA124 Silicon epitaxial planer type Unit : mm For switching circuits +0.2 2.8 –0.3 +0.25 0.65±0.15 ● Small capacity between pins, Ct 3 0 to 0.05 0.1 to 0.3 0.4±0.2 • Absolute Maximum Ratings Ta= 25˚C Parameter Rating Symbol

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

OF03

Abstract: 2SK1263 2SK2377
Contextual Info: Field Effect Transistors • Power F-MOS FETs Line-up Vgs =10V \ Vdss (V) \ to 60 80 100 150 170 200 250 450 500 550 600 800 900 \ (A) \ 1 A2SK2277 Mini Power 1.0 2SK2014 U Type 10 ★2SK2047 I Type a.o (Id=1.2A) ★2SK1834 220Fro ★2SK1980 N Type 7o ★ A2SK2128

2SK1248

Abstract: 2SK1257 2SK124 2SK1250 2SK1241 2SK1249 2sk1259 2SK1243 2SK1244 2SK1245
Contextual Info: - 92 - f m. % *± « ffl m E mmi A £ V* h ft* E ft K V * (V) fé I* !xl X ft (A) P d /P c h (W) I g SS (max) (A) Vg s (V) (min) (A) «I (max) V d s (A) (V) 'te & (Ta=25tî) (min) (max) V d s (V) (V) (V) gm (min) (tys) V d s (S) (V) (S) Id (A) 2SK1241

AN3962FB

Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030

MN1873287

Abstract: an6512n 2sk3190 MN171202 mn158413 mn15142 mn187164 mn6740 AN7210 MN15283
Contextual Info: Maintenance and Discontinued Types <Maintenance Types> Maintenance and Discontinued Types This product is not dealt with anymore. Customers dealing with this product conventionally may contact our sales division in the case of ambiguity. <Discontinued Types>

2SK2277

Abstract: 2SK2580 220E4 2SK2015 2SK2014
Contextual Info: FET, IGBT, IPD • Power F-MOS FETs Line-up Vgs =10V ÎV dss \ (V) 60 80 100 150 170 250 450 500 550 800 900 (A) \ 1 2SK2277 Mini-Powerl .0 2SK2014 UTypei.O ★2SK2047 I Type b.o (Id =1.2A) 2SK2538 220Fz.o ★2SK1834 220Fro ★2SK1980 N Type 7.0 ★ A2SK2128

K614

Abstract: K 1833 2SK 129 A gn1015 2SK1257 equivalent 2SK1962 2sk 170 Pin GN1021 IC STK411-220E CIRCUIT K996
Contextual Info: Field Effect Trarisistors _ i_ • Silicon Junction FETs Absolute Maximum Ratings Package No. S Mini Type Mini Type (05} Electrical Characteristics (Ta — 25 "C ) (Ta = 25 °C ) Application New S Type TO -92 (D10)