0F80000FFFFF Search Results

M28W320BB

Abstract: M28W320BT
Contextual Info: M28W320BT M28W320BB 32 Mbit 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output – VPP = 12V for fast Program (optional) ■

Contextual Info: ESMT Preliminary F49L320UA/F49L320BA 32 Mbit 4M x 8/2M x 16 3V Only CMOS Flash Memory 1. FEATURES z z z z z z z z z z - Single supply voltage 2.7V-3.6V Fast access time: 70/90 ns 4,194,304x8 / 2,097,152x16 switchable by BYTE pin Compatible with JEDEC standard

Contextual Info: ESMT Preliminary F49L320UA/F49L320BA 32 Mbit 4M x 8/2M x 16 3V Only CMOS Flash Memory 1. FEATURES z z z z z z z z z z - Single supply voltage 2.7V-3.6V Fast access time: 70/90 ns 4,194,304x8 / 2,097,152x16 switchable by BYTE pin Compatible with JEDEC standard

Intel Stacked CSP

Abstract: transistor a018 28F1602C3 28F1604C3 28F3204C3 28F3208C3 29066 28f160
Contextual Info: 3 Volt Intel Advanced+ Stacked Chip Scale Package Memory 28F1602C3, 28F1604C3, 28F3204C3, 28F3208C3 Preliminary Datasheet Product Features • ■ ■ ■ Flash Memory Plus SRAM — Reduces Memory Board Space Required, Simplifying PCB Design Complexity Stacked Chip Scale Package Technology

Contextual Info: M58CR064C, M58CR064D M58CR064P, M58CR064Q 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Package – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)

29064

Contextual Info: in te l PRELIMINARY 3 VOLT ADVANCED+ BOOT BLOCK FLASH MEMORY 28F800C3, 28F160C3, 28F320C3 x16 • ■ Improved 12 V Production Programming — Faster Production Programming — No Additional System Logic ■ 128-bit Protection Register — 64-bit Unique Device Identifier

A0-A21

Abstract: CR10 M58WR064EB M58WR064ET VFBGA56
Contextual Info: M58WR064ET M58WR064EB 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Package – VDD = 1.65V to 2.2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)

code lock circuit flow chart

Abstract: M28W320ECB M28W320ECT M28W320
Contextual Info: M28W320ECT M28W320ECB 32 Mbit 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output ■ – VPP = 12V for fast Program (optional)

JESD97

Abstract: M28W320FCB M28W320FCT
Contextual Info: M28W320FCT M28W320FCB 32 Mbit 2Mb x16, Boot Block 3V Supply Flash Memory Feature summary • Supply Voltage – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output – VPP = 12V for fast Program (optional) ■ Access Time: 70, 80, 90, 100ns

28F008C3

Abstract: 28F016C3 28F032C3 28F160C3 28F320C3 28F800C3 sr5 diode
Contextual Info: E PRELIMINARY 3 VOLT ADVANCED+ BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 28F008C3, 28F016C3, 28F032C3 28F800C3, 28F160C3, 28F320C3 n n n n n n Flexible SmartVoltage Technology  2.7 V–3.6 V Read/Program/Erase  2.7 V or 1.65 V I/O Option Reduces

29070* intel

Abstract: transistor w18 57 small
Contextual Info: 1.8 Volt Intel Wireless Flash Memory W18 28F320W18, 28F640W18, 28F128W18 Preliminary Datasheet Product Features High Performance — 70 ns Initial Access Speed — 14 ns Clock to Data Output Zero Wait-State Synchronous Burst Mode — 20 ns Page Mode Read Speed

Contextual Info: M36WT864TF M36WT864BF 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit (512K x16) SRAM, Multiple Memory Product PRODUCT PREVIEW FEATURES SUMMARY • SUPPLY VOLTAGE SRAM 8 Mbit (512K x 16 bit) – VDDF = 1.65V to 2.2V ■ – VDDS = VDDQF = 2.7V to 3.3V

Contextual Info: M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 16-, 32- and 64-Mbit x 16, Mux I/O, Multiple Bank, Burst 1.8 V supply Flash memories Features • Supply voltage – VDD = 1.7 V to 2 V for Program, Erase and Read – VDDQ = 1.7 V to 2 V for I/O buffers

Contextual Info: M28W320CT M28W320CB 32 Mbit 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 2.7V for Input/Output – VPP = 12V for fast Program (optional) ■

M29W640

Abstract: 8858H
Contextual Info: M28W320FST M28W320FSB M28W320FSU M28W640FST M28W640FSB M28W640FSU 32 Mbit 2Mb x16 and 64 Mbit (4Mb x16) 3V supply, Boot Block and Uniform Block, Secure Flash memories Feature summary • Supply voltage – VDD = 2.7V to 3.6V Core Supply voltage – VDDQ= 2.7V to 3.6V Input/Output Voltage

power supply aps 231

Abstract: 8857H 28F128W30 28F320W30 28F640W30 intel DOC
Contextual Info: 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O 28F320W30, 28F640W30, 28F128W30 Datasheet Product Features • High Performance Read-While-Write/Erase — Burst Frequency at 40 MHz — 70 ns Initial Access Speed — 25 ns Page-Mode Read Speed — 20 ns Burst-Mode Read Speed

M28W320CB

Abstract: M28W320CT
Contextual Info: M28W320CT M28W320CB 32 Mbit 2Mb x16, Boot Block Low Voltage Flash Memory PRELIMINARY DATA • SUPPLY VOLTAGE – VDD = 2.7V to 3.6V: for Program, Erase and Read – VDDQ = 1.65V or 2.7V: Input/Output option – VPP = 12V: optional Supply Voltage for fast

Contextual Info: ADVANCED INFORMATION MX28F640C3BT/B 64M-BIT [4M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Bit Organization: 4,194,304 x 16 • Single power supply operation - 3.0V only operation for read, erase and program operation - VCC=VCCQ=2.7~3.6V - Operating temperature:-40° C~85° C

F90000

Contextual Info: PRELIMINARY MX29LA129M H/L 128M-BIT SINGLE VOLTAGE 3V ONLY UNIFORM SECTOR FLASH MEMORY FEATURES GENERAL FEATURES • Single Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations • Configuration - 16,777,216 x 8 / 8,388,608 x 16 switchable

M58WR064K

Contextual Info: M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 16-, 32- and 64-Mbit x 16, mux I/O, multiple bank, burst 1.8 V supply flash memories Features • Supply voltage – VDD = 1.7 V to 2 V for program, erase and read – VDDQ = 1.7 V to 2 V for I/O buffers

PM1084

Contextual Info: MX28F640C3BT/B 64M-BIT [4M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Bit Organization: 4,194,304 x 16 • Single power supply operation - 3.0V only operation for read, erase and program operation - VCC=VCCQ=2.7~3.6V - Operating temperature:-40°C~85°C

Contextual Info: ADVANCED INFORMATION MX29LV640U 64M-BIT [4M x 16] CMOS EQUAL SECTOR FLASH MEMORY FEATURES GENERAL FEATURES • 4,194,304 x 16 byte structure • One hundred twenty-eight Equal Sectors with 32K word each - Any combination of sectors can be erased with erase

Contextual Info: MX29LV640BU FEATURES 64M-BIT [4M x 16] CMOS EQUAL SECTOR FLASH MEMORY GENERAL FEATURES • 4,194,304 x 16 word structure • Sector Structure - 128 Equal Sectors with 32K word each • Extra 128-word sector for security - Features factory locked and identifiable, and customer lockable

fe3021

Abstract: 64K DRAM 80286 schematic 80286 mouse D4000-D7FFF 0F80000FFFFF 8042 keyboard controller LIM EMS 4.0 FE3010B
Contextual Info: WESTERN DIGITAL CORP “'" system s lòg' i c / 4DE D • T71fl22ä aG0bSS3 Q Hlii»C péripheral t - 5 2 ,- 3 3 - 2 - 1 FE3021 Address Bujfer and Memory Controller f SS WESTERN DIGITAL WESTERN D IG IT A L CORP 40E D ■ 1716223 OOQbSSM 2 H l i l DC FE3021