0G001 Search Results

tied59

Abstract: TIEF151 TIED56 TIED69
Contextual Info: TEXAS OPTOELECTRONICS INC IDE D | 0 ^ 3 ^ 3 4 0G00127 ô | 170/ T-H1-53 TIED69 Avalanche Photodiode Texas Optoelectronics, Inc. FEATURES DESCRIPTION • • • The TIED69 is a high-speed, high-resistivity photodiode. It is designed to operate in the reverse-voltage avalanche region just below the

2N3904DCSM

Abstract: 2N2222ADCSM 2N3965
Contextual Info: 61 33167 0G00105 S 37E D SEMELAB LTD BS/CECC Polarity Package v CEO •c cont 50003-017 50003-017 50003-017 50003-017 NPN NPN NPN NPN NPN T077 Dual T03 T03 T03 T03 50 60 80 60 80 0.03 10 10 10 10 •150-600 25-90 25-90 50-150 50-150 NPN NPN NPN NPN NPN T039

H8212

Contextual Info: OPTEK TECHNOLOGY INC DbE D | bTTflSfiD 0G0012G 1 O p to e le c tro n ic s D iv is io n TS Tw w T - 4 1 -L 3 T R W Electro nic C o m p o n e n ts G rou p I Product Bulletin S063 Ja nu ary 1985 G aAIA s Plastic Infrared Em itting Diodes Types 0P240SL, 0P24ÜSLC, QP240SLB, 0P240SLA

MMD0840

Abstract: MMD0803 MMD-0840 MMD0833 step recovery diodes
Contextual Info: METELI CS CORP T -0 7 -II bOS13S2 0G00174 1 55E D GLASS PACKAGED STEP RECOVERY DIODES metelics CORPORATION FEATURES • Provides High Efficiency for both Low and High Order Multiplier Designs • Passivated Chips for Stable, Reliable Operation • Selections Available for Special Requirements

diode IN5399

Abstract: IN5399 IN 5399 TL IN5399 TL 1N5391 1N5392 1N5393 1N5395 1N5397 1N5398
Contextual Info: DIOTEC ELECTRONICS CORP U A SBE T> I EÛM'îlD? 0G00141 721 I DIX Data Sheet No.: GPDP-151-A DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 Tel.: 310 767-1052 Fax: (310)767-7958 \B " T * O l- 1.5 AMP GENERAL PURPOSE SILICON DIODES VOLTAGE RANGE

1N4007 GW

Abstract: 1N4001.4007 gw 1N4007 1N4001..4007 aa DIOTEC 1n4007 diotec 1N400 GPDP 1N4001 1N4003
Contextual Info: DIOTEC ELECTRONICS CORP 5ÛE D • DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B I ÌT P Gardena, CA 90248 u ä L Tel.: 310 767-1052 Fax: (310)767-7958 EûMTlG? 0G00135 42fl I D IX Data Sheet No.: GPDP-101-A 1 AMP GENERAL PURPOSE SILICON DIODES VOLTAGE RANGE

SKE27A

Abstract: SKE-27A
Contextual Info: SEM ITRON IN DUSTR IES L T » M3E D • 013756^ 0G00112 1 T Œ S LC B r " - 7 3 1.5KE and IN6267-IN6303A SERIES Transient Voltage Suppressor ■ Glass Passivated Junction Voltage Range 6V8 to 400 Volts ■ 1.5KW Peak Pulse Power 5 Watt Steady State ■ Unidirectional and Bidirectional

CTU-1S

Abstract: CTB-34 CTU1S FMU CTU 1S CTB34 CTU-G3DR CTUG3DR CTU-22U ctu22s DSMA
Contextual Info: k i SANKEN ELECTRIC U S A H E 1 I 7^0741 IVrm:100~1300V Fast Recovery Diodes 0G00133 0 | • lo: 4.0—20 A T - 0 3 - I7 T -X ì-O G CTU/FMU Rating/ Characteristics V rsm V rm V) (V) Type N oN ^ CTU-G2DR CTU-G3DR 1350 1350 1300 1300 FMU-11S , R FM U-12S, R

G10FS

Abstract: G20F G8FS G12FS G15FS G20FS G25FS NV20F NV30F NV40F
Contextual Info: DEAN TECH/ H V COMPONENTS 3bE D • 27Gbfl4b 0G0014G 3 «HVCO NV, G -Low Current High Voltage Rectifiers Repetitive Peak Reverse Voltage Avg. Forward Current Max. VRRM V Volts , favm - 55<>c mA(milliAmps) HVCA Numbei Max. Forward Voltage Drop VF@ IF V (Volts)

A7W 19

Abstract: A7W 13 A7W 05 a7w 60 A7W 03 a7w 45 a7w 26 a7w 01 a7w 02 a7w 25
Contextual Info: E G & G JUDSON S7E D • 303Dh0S 0G001Ô3 T ■ DF Series DF-XXX1 _ Features • • Built-in Interference Planar Diffused Filter • Low Noise • Hermetically Sealed • 106 Blocking • Oxide Passivated Operating Data and Specifications at 23 °C:

OAK TECHNOLOGY

Abstract: oti-067 OTI067 OTI-077 oak technology oti 067 cga to vga Hercules Graphics Card oak oti-067 128x48 96x64
Contextual Info: OAK T E C H N O L O G Y INC SSE P • bV E ^ M O S 0 0 0 0 1 7 5 <333 H 0 A K T —T - £ 2 .- 3 3 - if 5 " Oak Technology Inc August 1991 O T T -0 7 7 Extended High Resolution VGA Graphics Controller with 1MByte Video Memory Support DESCRIPTION The OTI-077 is a highly integrated, single chip Extended High Resolution VGA Graphics Controller compatible with

Ortel model bn-1

Abstract: PD025-PM rise time of photodiode PDDD132 Ortel bn-1 840nm
Contextual Info: ORTEL CORP ih H • bfllTSIS 0DD0132 4 « O R T T -4i’- 5 0 ORTEL CORPORATION 2015 W. Chestnut St. Alhambra, CA91803 Tel: 818 281-3636 Telex: 752 434 Fax: (818) 281-8231 MODEL PD025-0M and (PD025-PM) PHOTODIODE Preliminary Data Sheet ABSOLUTE MAXIMUM RATINGS

Contextual Info: Fast recovery silicon diodes. 3 Amps. The plastic material carries U/L recognition 94V-0. Maximum Average Forward Rectified Current I f îa v Ta TYPE Axial Lead I S.M .D. _JA) 1 Max. Forward Voltage Drop at Ta = 25 °C Max. Recurrent Reverse Voltage

Contextual Info: MU9C0591, MU9C1902, MU9C2903, MU9C4904 5 1 2 X 9 , 1KX 9, 2K X 9, AND 4K X 9 CMOS FIFOs •LIMINÂRY DISTINCTIVE CHARACTERISTICS o High-speed First-in, First-out buffers o 20 ns Access time, 30 ns Cycle time 33 MHz o 512 X 9, 1K X 9, 2K X 9, organizations

HMC128

Contextual Info: GaAs MMIC Double-Balanced 1.8 to 5 GHz Mixer HITTITE MICROWAVE CORPORATION HMC128 JUNE 1996 Features CONVERSION LOSS: 11 dB LO TO RF AND IF ISOLATION: > 30 dB SUITABLE FOR PCN BAND APPLICATIONS Typical Performance at a Fixed 250 MHz IF General Description

C30817

Abstract: s915 C30872 C30954E C30955E tic 1060 C30956E s914 C30916E 92LS-S916
Contextual Info: £ n G & G/CANADA/OPTOELEK e / ID » l Electro Optics 3 D 3 D b lO O O O O IH ^ bbO ICANA 'T '- y / '- S V Photodiode C30954E, C30955E, C30956E DATA SHEET Large Area Long Wavelength Enhanced Silicon Avalanche Photodiodes for General-Purpose Applications • High Quantum Efficiency —

Contextual Info: ISSI IS62LV256_ 2 32K x 8 LOW VOLTAGE STATIC RAM a u g u s t 1995 FEATURES DESCRIPTION • Access time: 45, 70, 100 ns T he IS 62LV 256 is a ve ry high-speed, low power, 32,768-w ord by 8-bit static RAM. It is fabricated using high-perform ance CM O S double-m etal technology.

250-28UNF-2B

Abstract: 250-28UNF VV-I-530 1N5597 corona discharge circuit BIDDLE PDA FOR JANTX GRADE DEVICE ic 4046 1N5600 kvr 10 621
Contextual Info: MIL SP ECS 000 • 0000125 0031012 3 ■ M I L S The documentation and process conversion measures necessary to comply with this revision shall be completed by 15 February 1992 I 1NCH-POUNO MIL-S-19500/404B 15 November 1991 SUPERSEDING MIL-S-1950Q/404A 6 Apri I 1971

2N1771A

Abstract: 2N1774A ic vrm rct Thyristor 2N1772A 2N1776A 2N1777A 3Q3-224 ic tc 4066 diagram 2N1776A JANTX
Contextual Info: I C | QODOIBS D D Q i n 4 t. | ~ MIL SPECS M IL-S-19500/168C '29 January 1968 SUPERSEDING MIL- S - 19500/ 168B 18 August 1965 See 6.4 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, THYRISTORS (CONTROLLED RECTIFIERS), SILICON TYPES 2N1771A, 2N1772A, 2N1774A, 2N1776A, 2N1777A,

100411B

Abstract: IOR 5B2 3H 92c168 opti 486 chipset
Contextual Info: rai 92C178 i i r LCD Super VGA Controller Chip 1.0 Introduction The OPTi 92C178, a fully integrated follow-on to the OPTi 92C168, provides an unmatched price/performance LCD VGA solution for portable IBM compatible personal comput­ ers. The 92C178 offers high performance, full integration, low

EPITAXX ETX 300

Abstract: EPITAXX EPITAXX ETX 75 EPITAXX ETX 100 RFC 2 ETX1300FJ LED pigtailed
Contextual Info: EPITAXX INC SDE J> • 33b040b OOOQlbfl 1 « E P X -p<//-07 ETX 1 3 0 0 RFC, ETX 1 3 0 0 RST EPITAXX ETX1300FJ&#39; ETX1300FC 1300 nm High Power ELED Modules Features ■ High coupled pow er 75 |iW typical into multimode ■ High speed response (3.5 ns typical)

Contextual Info: ASAHl KASEI [A K l 30/1 3 1 F e a t u r e s i I Completely integrated baseband transceiver for 2-w ire twisted pair applications [D 2B+1D+1M channels of PCM -BUS framed data, using time compression multiplexing □ Data rate: 160kbps 2B+1D+1M) Q Loop coverage: 1 km (AK130) / 2 km (AK131)

Contextual Info: OPTEK TECHNOLOGY INC DtE D | bT^flSflO DOODlbS b | TW/-6? Optoelectronics Division T R W Electronic Com ponents Group Product Bulletin 5154 January 1985 Photologic Plastic Sensors Types QPL550, OPL550 0C, OPL551, OPL551-OC, SLB, SLA Features • Four output options

8942

Abstract: 3161
Contextual Info: 2ME D ELECTRO-FILMS INC/ SEMI- 3iaiS32 0D00172 5 • The CTN series of nichrome on silicon, center-tapped, single-vadue, resistor chips combine excellent stability and power-handling. T\vo bonding pads per termination allow greater flexibility in hybrid circuit layouts. By connecting to