0Q00 Search Results

PEEL22CV10P

Abstract: ict PEEL22cv10p
Contextual Info: INTERNATIONAL C M O S 9: 3 7E 4 0 * 4 0 70 7 D 0Q003bb Product Previev; INTERNATIONAL CMOS TECHNOLOGY, INC. T ^ 6 - Í 9 0 / PEELLm 22CV1 0-12/PEE1T22CV10=15 CMOS Programmable Electrically Erasabi Logic Device Features Architectural Flexibility — 132 product term x 44 input AND array

Contextual Info: 2 3 Û 3 3 C14 0Q00Ö4Ö 362 • CMBT6517 HIGH-VOLTAGE TRANSISTOR N -F -N transistor Marking CMBT6517 = 1Z PA CKA GE O U TLINE DETAILS A LL DIM ENSIO NS IN m m 3.0 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ■C> 2 ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter

Contextual Info: T AI WAN SE MI C OND UC T OR CO EME D R8Z0 • ñ ñ BS S Mb 0Q0007S T -Û I-i 7 S ■ SUBBI THRU TSC S 8.0 AMP SCHOTTKY BARRIER RECTIFIERS VOLTAQE RANGE 20 to 60 Volts CURRENT 8.0 Amperes TO-220A .412 3.8^ ± .2 .180 10.6 HOLE THRU (4.6) MAX. ' - ¿4 * -b r|

0429 560 06

Abstract: ISL5074 ISL1302
Contextual Info: ISOCOM COMPONENTS LTD 45E T> m 4ôôb510 0Q00343 3 H I S O -p¿//-2l T-l DIFFUSED SOLID STATE LAMPS ISOCOM HIGH EFFICIENCY RED - ISL1300, 1301, 1302, ISL5774 YELLOW - ISL1400, 1401, 1402 HIGH EFFICIENCY GREEN - ISL1503, ISL1523 _BRIGHT RED - ISL1000, 1002, ISL5074

Contextual Info: RECTANGULAR DIFFUSED SOLID STATE LAMPS| ISOCOM COMPONENTS LTD MSE D • M flflbSlD 0Q0034R ^ 4 B IS O HIGH EFFICIENCY RED DIFFUSED - ISL57124 YELLOW DIFFUSED - ISL53124 HIGH EFFICIENCY GREEN DIFFUSED - ISL54124 H.E. GREEN/AlGaAS RED DIFFUSED - ISL49124 «

it139

Contextual Info: IT136 —IT139 CALOGIC CORP MAE D 164432B Monolithic Dual PNP General Purpose Amplifier fi M C G Q caloric CORPORATION v 'T W -T .l IT136-IT139 A B S O LU TE MAXIMUM RATINGS Ta = 25°C unless otherwise specified FEATURES • • • • • 0Q003bS High Gain at Low Current

Contextual Info: SEMELAB LTD 37E ] • Ô1331Ô7 0Q0030S H JAN 0 5 1988 SEMELAB 2N 6787 2N 6788 MOS POWER MECHANICAL DATA N-Channel Enhancement Mode Dimensions in mm APPLICATIONS • FAST SWITCHING • MOTOR CONTROLS • POWER SUPPLIES PIN 1-S o u rce PIN 2 -G a te PIN 3 Drain and Case

Zener Diode 4148

Abstract: zener T 4148 T 4148 zener ZENER diode t 4148 ZENER 4148 1N914 SOT-23 v 4148 zener diode diode t 4148 zener diode 4148 code diode 4148 sot-23
Contextual Info: 02 &J 02E 00432 1989963 CENTRAL SEMICONDUCTOR 0Q00435 pe| 7 | T -2 3 ~ 0 $ - SMD WÊÈÊSSÊÊiÊÊÈâm eentsvsi ssmieonsBwefior sepp. Centres! gs^ ieoiï^ yetai”e@rp. Sx •‘¿¿ri6 SURFACE MOUNTED DEVICES DIODE: SOT-23, SOT-143, S0D-80 ZENER DIODE: SOT-23, S0D-80

quartz 50mhz

Abstract: 50mhz crystal oscillator 5v 50MHZ oscillator bo 913 cmos ic 4056 100C 50MHZ ECS-8100 CRYSTAL 50MHZ CTI QUARTZ
Contextual Info: E C S INC tIE B • 302^3b2 0Q00182 STT « E C S I - l.'b 5 o FULL RANGE CRYSTAL QUARTZ OSCILLATORS INDEPENDENT DUAL OUTPUT COMPLACENCE CRYSTAL OSCILLATOR ECS-8100 SERIES FEATURES • O s c illa te in d e p e n d e n t T w o -fre q u e n c y . • W id e fre q u e n c y ro n g e t3 .5 M H z lo 50M H z .

Contextual Info: DRAWING No Customer Information Sheet L3-LMUM5NI8-0Q00-ÛQÛ SHEET 2 OF 7 f *“T 2 -CONTACT n ~p 3. No ~ pI Û ^ 'cT I m ^ D [ m e7 ^ a ll s^ $ Him in 10 f*R — X I z z z z : 2,00 70 r-QEl SPECIFICATIONS: MATERIAL: MOUL D ING GLASS-FILLED UL94V-0, J A C K S C R E W : S'

Contextual Info: WIRE—PRO INC b?E D • 1672014 0Q00571 013 Q S-2 I.C. Q uiet Sockets w ith S urface M ount D ecoup ling C apacitors The new QS-2 Quiet Socket™-2 Series of 1C sockets from Garry Electronics can be used wherever both a socket and capacitor are required

SIS5001

Abstract: 2 TZ 11 speech synthesizer 5003 speech sis5003
Contextual Info: ETE D • fl5S3âflT T ■ 0Q00Q25 ~-y- r r ) - ) 3 tiJ U IfJ * iIJ 'l SILICON INTEGRATED CONSUM ER 1C SIS 5001 1 Sec Speech Synthesizer FEATURE • • • • • • • O perating power supply 2.4-4.5V Typical 1.5 seconds speech capacity Direct access by level o f pulse trigger

fast recovery 35amp

Abstract: Motorola TO92 OM15N50C OM30N20C OM35N10C OM5N100C OM803
Contextual Info: OflNIREL CORP 43E D m ^70^073 0Q00S26 1 « O IIN I QM35N10C OM15N50C OM30N20C OM5N1QOC POWER MOSFET IN HERMETIC ISOLATED JEDEC TO-258AA PACKAGE - r 39-13 100V Thru 1000V, Up To 35 Amp, N-ChannetMOSFET With Low Rds 0m Characteristics» Ml FEATURES • Isolated H erm etic M etal P ackage

Contextual Info: SUSSEX SEMICONDUCTOR INC Tb ÎF |fl7 â B a il *05 0Q00G2D a Surface Mount Rectifier SOR-Series Features_ _ .JLQfcJjL INCHES • Isolated or common cathode/anode devices _a ra • Side-by-side rectifier/zener combination UT 13 • P.I.V.’s to 1 KV

Contextual Info: KINGBRIGHT ELECTRONIC ETE D • SITTDOM 0Q00D17 Ö ■ T — ^ \' - j f O Kingbright - Special - LED’s Case ft 1 Gmm nr Colour Case-colour L -53S R D /A GaAIAs 660 red-diffused 60 - 90 L -53S R D /B GaAIAs 660 red-diffused 90 - 100 L -53S R D /C GaAIAs

VT83B

Abstract: VT-83B
Contextual Info: PACKAGE DIMENSIONS inch mm 1.38(35.051 .070 (1,78) • 3D30bG'i .216(5.49) 4 «VCT 0Q007EE VT800 Series LIGHT DEPENDENT RESISTOR 33E D LEAD DIA. £ PLASTIC COATINQ NOT CONTROLLED WITHIN .10 (2.5) OF CERAMIC SUBSTRATE. PLASTIC COATED TO PROTECT ACTIVE SURFACE

MCS15

Abstract: erc15 MIL-T-27 ferrotran mcs-12 MV12 ERC6 MV20 HCV-20 MMP30
Contextual Info: FERROT RAN ELECTRONICS CO 75 De J 3554031 0Q00103 4 ^ _ :_ 1X ^ 7 - Q$~ SOLID STATE POWER SUPPLY MODULES AC TO DC REGULATED POWERTRAN POWER SUPPLY MODULES GUARANTEED FOR 3 YEARS. DUAL OUTPUT MODULES: xyw vrtiw m t Mowm *ooni»o]^ « atvcqJT These precision engineered modules furnish two

3508-0000T

Contextual Info: DIP Connector Accessories and Mating Cable Accessories C ontact Q uantity P a rt N um ber Strain Relief Keys Keying and Polarizing Puli Tabs* 14 3406-0000 34O6-0OOOT 3406-0010 3406-001OT 3406-0002 3448-7 i 3490-1 16 3416-0000 3416-0Q00T 3416-0010 3416-0010T

8254 aa

Abstract: 0Q0011 82C54 82C54-2 UM82C54 UM82C54-2 50131
Contextual Info: UNICORN MICROELECTRONICS T27Ö7ÖÖ 0Q00114 3 • 24E D T - S 2 - 3 3 - 0 S - UM82 C 5 4 /-2 CMOS Programmable interval Timer Features Compatible with other microprocessors High speed, "zero wait state" operation with 8086/88 and 80186/188 Low power CMOS — lc c = 10 m A @ 8 MHz count

DL110

Abstract: DLP110 14 pin DOT MATRIX 01162 3385
Contextual Info: MARK IV/ GULTON GRAPHIC GS D S7T4141 0Q00301 D • T - 5 I- I5 T 0 11 62 DOTHEAD ^ The 01162 is an array o f 10 dots on 0.0167" centers used to annotate a single alphanumeric d o t matrix line along the edge o f an EKG chart. The larger "p lo td o t" can be

in3155

Abstract: zener diode - C 10 ST 1N3154 1N3157A diode zener 718 1N3154A 1N3155 1N3156 1N3156A 1N3157
Contextual Info: 1775470 C O D I SEMICONDUCTOR I| TO INC 90D 0 0 5 5 7 D eT | 1775470 0Q00SS7 t, D • CODI Sem iconductor, Inc. 8.4 VOLT NOMINAL ZENER VOLTAGE 1N3154 TEMPERATURE COMPENSATED ZENER REFERENCE DIODES thru 1N3157A «MAXIMUM RATINGS O p e ra tin g T e m p e ra tu re :

1202 transistor

Abstract: Opto-Sensor transistor 1202 photo transistor photo interrupter 5mm 24V IR Sensor Aleph Aleph Opto-Sensor schematic photo sensor OJ-1202
Contextual Info: ALEPH INTERNATIONAL 3SE CORP D 0473107 0Q00157 1 • ALE O J-1202/O J-1302 Interrupter Opto Sensor • Photo transistor output • Sensing slot width 5mm 0.20" • High sensitivity, High resolution • OJ-13D2 : Deep slot ■ MAXIMUM RATINGS (T a = ELECTRICAL CHARACTERISTICS (T a =

Contextual Info: 2SE D KODENSHI CORP SG-2BClis S 2 4 2 t 0 a 0Q00277 2 Kfc. iS i& J t? * h b ‘f l ' 7 3 DIMENSIONS Unit: mm 5 >y^"5— ^(C(K^LfcS;#fS7=t h-tr>tf"C\ The SG-2BC reflective sensor combines a GaAs IRED with a high-sensitivity phototransistor in a super-mini (4$5)

1N1188A

Abstract: 1N1185A 1N1183A 1N1186A 1N1189A INII87A
Contextual Info: m BDTSTlb 0Q00E73 1T4 • EDL MSE D EDAL INDUSTRIES INC - Bv P IV _Sfia_Tahlfi-. . <§ 1 L0 Io liO A Is 200 AMPS Vf 1.1 v @ Ir Ir c Case o ' STYLE STAMP 100 A <§ PIV <§ -LZl _C @ o o c do-«;- Etai*.£Æ r, EQUI V. TO P/N -2L _C