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    T-DQ12

    Abstract: OQ10
    Text: E L E C T R O N I C D E S I G N S INC 3QE D • 3230114 0000723 7 ■ ^ED I EDI8M16256C Eftcfronta Ottici« Inc* High Speed 4 Megabit SRAM Module 256Kx16 CMOS, High Speed Programmable, Static RAM Module The EDI8M 16256C is a4096K-bit high speed C M O S Static R A M Module consisting of sixteen 16 256Kx1


    OCR Scan     		PDF 3230L14 DD007S3 EDISM16256C 256Kx16 EDI8M16256C isa4096K-bit 256Kx1 256Kx4 256Kx16, 512Kx8 T-DQ12 OQ10

    Untitled

    Abstract: No abstract text available
    Text: B7 9-9 7 2N3993, 2N3993A P-CHANNEL SILICON JUN CTIO N FIELD-EFFECT TRANSISTOR Absolute maximum ratings at TA = 2 5 'C • CHOPPERS • HIGH SPEED COMMUTATORS Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation


    OCR Scan     		PDF 2N3993, 2N3993A 2N3993 0Q00727