1 K RESISTOR Search Results

UNR1110

Abstract: UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119
Contextual Info: Transistors with built-in Resistor UNR111x Series UN111x Series Silicon PNP epitaxial planar transistor Unit: mm For digital circuits 2.5±0.1 (1.0) R 0.9 R 0.7 0.55±0.1 (R1) 47 kΩ 10 kΩ 22 kΩ 47 kΩ 10 kΩ 10 kΩ 4.7 kΩ 22 kΩ 0.51 kΩ 1 kΩ

UNR1210

Abstract: UNR1211 UNR1212 UNR1213 UNR1214 UNR1215 UNR1216 UNR1217 UNR1218 UNR1219
Contextual Info: Transistors with built-in Resistor UNR121x Series UN121x Series Silicon NPN epitaxial planar type Unit: mm For digital circuits 2.5±0.1 (1.0) R 0.9 R 0.7 0.55±0.1 (R1) 47 kΩ 10 kΩ 22 kΩ 47 kΩ 10 kΩ 10 kΩ 4.7 kΩ 22 kΩ 0.51 kΩ 1 kΩ 47 kΩ

CY7C136E-55NXC

Abstract: CY7C131E-55 cy7c136e CY7C131E-15NXI CY7C136AE-55NXI
Contextual Info: CY7C131E, CY7C131AE CY7C136E, CY7C136AE 1 K / 2 K x 8 Dual-port Static RAM 1 K / 2 K × 8 Dual-port Static RAM Features Functional Description • True dual-ported memory cells, which allow simultaneous reads of the same memory location ■ 1 K / 2 K × 8 organization

TM170A

Abstract: p36a AN12 AN14 MN1020017 MN1021617 p46a P62J p33a
Contextual Info: □ MN1021617 / F1617 / 0017 / 0817 M N 1021617 / F1617 under developm ent / 0 0 1 7 (under developm ent) / 08 17 (under developm ent) 1 Type I ROM (xS-bit) 12 8 K /1 2 8 K (Flash) / OK / 64K • RAM (x8-bit) 4 K /4 K /4 K /3 K 1 Minimum Instruction Execution Time

CY7C136E

Abstract: CY7C131AE-15JXI CY7C136AE-55NXI
Contextual Info: CY7C131E, CY7C131AE CY7C136E, CY7C136AE 1 K / 2 K x 8 Dual-port Static RAM 1 K / 2 K × 8 Dual-port Static RAM Features Functional Description • True dual-ported memory cells, which allow simultaneous reads of the same memory location ■ 1 K / 2 K × 8 organization

CY7C136E

Contextual Info: CY7C131E, CY7C131AE CY7C136E, CY7C136AE 1 K / 2 K x 8 Dual-port Static RAM 1 K / 2 K × 8 Dual-port Static RAM Features Functional Description • True dual-ported memory cells, which allow simultaneous reads of the same memory location ■ 1 K / 2 K × 8 organization

CY7C136E

Contextual Info: CY7C131E, CY7C131AE CY7C136E, CY7C136AE 1 K / 2 K x 8 Dual-port Static RAM 1 K / 2 K × 8 Dual-port Static RAM Functional Description Features • True dual-ported memory cells, which allow simultaneous reads of the same memory location ■ 1 K / 2 K × 8 organization

CY7C136E

Contextual Info: CY7C131E/CY7C131AE CY7C136E/CY7C136AE 1 K / 2 K x 8 Dual-port Static RAM 1 K / 2 K × 8 Dual-port Static RAM Features Functional Description • True dual-ported memory cells, which allow simultaneous reads of the same memory location ■ 1 K / 2 K × 8 organization

LQFP080-P-1414A

Abstract: MN101C28A MN101CP28DBF QFP084-P-1818E
Contextual Info: □ MN101C28A / 28C / 28D / 28F / 28L MN101C28A / 28C / 28D / 28F / 28L 1 Type 1 ROM x8-Bit 32 K / 48 K / 64 K / 96 K / 96 K (External memory can be expanded) 1 RAM (x8-Bit) 1 536/2 048 / 2 048 / 4 096 /10 240 (External memory can be expanded) 1 Minimum Instruction Execution Time

AD5293

Abstract: ADR512 pin configuration 20K potentiometer 2N7002 AD8512 OP1177 OP42 7408 ic truth table
Contextual Info: Single-Channel, 1024-Position, 1% R-Tolerance Digital Potentiometer AD5293 FEATURES FUNCTIONAL BLOCK DIAGRAM VDD Single-channel, 1024-position resolution 20 kΩ, 50 kΩ, and 100 kΩ nominal resistance Calibrated 1% nominal resistor tolerance resistor performance mode

ad5293

Abstract: Audio Volume Control IC AND GATE 7408 specification sheet ADR512
Contextual Info: Single-Channel, 1024-Position, 1% R-Tolerance Digital Potentiometer AD5293 FEATURES FUNCTIONAL BLOCK DIAGRAM VDD Single-channel, 1024-position resolution 20 kΩ, 50 kΩ, and 100 kΩ nominal resistance Calibrated 1% nominal resistor tolerance resistor performance mode

ADR512

Contextual Info: Single-Channel, 1024-Position, 1% R-Tolerance Digital Potentiometer AD5293 FUNCTIONAL BLOCK DIAGRAM FEATURES VDD Single-channel, 1024-position resolution 20 kΩ, 50 kΩ, and 100 kΩ nominal resistance Calibrated 1% nominal resistor tolerance resistor performance mode

Contextual Info: Preliminary Technical Data Single Channel, 1% Resistor tolerance, 1024/256-Position Digital Variable Resistor AD5272/AD5274 FEATURES Single-channel, 1,024/256-position resolution 20 kΩ, 50 kΩ and 100 kΩ nominal resistance Calibrated 1% Nominal Resistor Tolerance

ad5293

Abstract: ADR512 AD5293BRUZ 2N7002 AD8512 OP1177 OP42 Rheostat 20K IC AND GATE 7408 specification sheet
Contextual Info: Single-Channel, 1024-Position, 1% R-Tolerance Digital Potentiometer AD5293 FEATURES FUNCTIONAL BLOCK DIAGRAM VDD Single-channel, 1024-position resolution 20 kΩ, 50 kΩ, and 100 kΩ nominal resistance Calibrated 1% nominal resistor tolerance resistor performance mode

data sheet IC 7408

Abstract: IC AND GATE 7408 IC 7408 7408 ic truth table 7408 ic diagram 7408 pin configuration IC AND GATE 7408 pin configuration IC AND GATE 7408 specification sheet pin DIAGRAM OF IC 7408 AD5293
Contextual Info: Single-Channel, 1024-Position, 1% R-Tolerance Digital Potentiometer AD5293 FEATURES FUNCTIONAL BLOCK DIAGRAM VDD Single-channel, 1024-position resolution 20 kΩ, 50 kΩ, and 100 kΩ nominal resistance Calibrated 1% nominal resistor tolerance resistor performance mode

CCD SMD

Abstract: DIODE D29 SMD Capacitor types ccd VH3A 22 pin ccd CCD 22 pin ccd diode datasheet ccd sharp d29 08 ic pin details
Contextual Info: LR38574 Timing Generator IC for 1 090 k/1 310 k-pixel CCDs LR38574 DESCRIPTION PIN CONNECTIONS The LR38574 is a CMOS timing generator IC which generates timing pulses for driving 1 090 k/ 1 310 k-pixel CCD area sensors and processing pulses. TOP VIEW SHTR

ad5293

Contextual Info: Single Channel, 1024-Position, 1% R-Tol, Digital Potentiometer AD5293 Preliminary Technical Data FEATURES Single-channel, 1024-position resolution 20 kΩ, 50 kΩ and 100 kΩ nominal resistance Calibrated 1% Nominal Resistor Tolerance Rheostat mode temperature coefficient: 35 ppm/°C

Contextual Info: Preliminary Technical Data Single Channel, 1% Resistor tolerance, 1024/256-Position Digital Variable Resistor AD5270/AD5271 FEATURES FUNCTIONAL BLOCK DIAGRAM Single-channel, 1,024/256-position resolution 20 kΩ, 50 kΩ and 100 kΩ nominal resistance Calibrated 1% Nominal Resistor Tolerance

Contextual Info: M93C86, M93C76, M93C66 M93C56, M93C46, M93C06 16 K/8 K/4 K/2 K/1 K/256 x8/x16 Serial Microwire Bus EEPROM PRELIMINARY DATA • INDUSTRY STANDARD MICROWIRE BUS ■ 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION ■ DUAL ORGANIZATION: by WORD (x 1 6 )o rb y

B130DI

Abstract: bq2954 resistor 1k 20W ELJ-FA100KF2 FZT789ACT BD12954 thermistor 103AT ntc 01UF 100UF 47UF
Contextual Info: Designed ttoo GO Designed GO . . . Practical and Cost-Effective Battery Management Design Examples by Benchmarq Series 2954, Number 1 20W Miniature Dual-Stage Fast Lithium-Ion Charger Using bq2954 Features K K K K K K K K K K Circuit board only 1.4 x 0.9” 35 x 24mm

R075

Abstract: R056 R68 resistor kf 202 transistor YAGEO TYPE CR KT 210 R30-R33 470R 680R kc series vitrohm resistors
Contextual Info: Series KC, KH, KV, KT, KF Temperature coefficient of the resistive wire for wirewound resistors P70 Type TC +400 ±50 ppm K-1 TC +0 ±40 ppm K-1 TC +0 ±10 ppm K-1 1W 200 R056 - R20 R22 - 300R 330R - 9K1 2W 202 R075 - R43 R47 - 620R 680R - 20K 4W 206 R056 - R20

YAGEO TYPE CR

Abstract: Yageo 680R Vitrohm resistors R-62
Contextual Info: Series KP Temperature coefficient of the resistive wire for wirewound resistors P70 Type TC +400 ±50 ppm K-1 TC +0 ±40 ppm K-1 TC +0 ±10 ppm K-1 2W 290 R10 - R27 R30 - 510R 560R - 7K5 4W 292 R15 - R56 R62 - 620R 680R - 11K 5W 294 R27 - R62 R68 - 1K1 1K2 - 20K

AN1064

Abstract: an4359 circuit diagram for automatic voltage regulator G PLC connection CY14B101KA
Contextual Info: CY14B101KA CY14B101MA 1-Mbit 128 K x 8/64 K × 16 nvSRAM with Real Time Clock 1-Mbit (128 K × 8/64 K × 16) nvSRAM with Real Time Clock Features 1-Mbit nonvolatile static random access memory (nvSRAM) ❐ 25 ns and 45 ns access times ❐ Internally organized as 128 K × 8 (CY14B101KA) or

Contextual Info: CY14B101KA CY14B101MA 1-Mbit 128 K x 8/64 K × 16 nvSRAM with Real Time Clock 1-Mbit (128 K × 8/64 K × 16) nvSRAM with Real Time Clock Features 1-Mbit nonvolatile static random access memory (nvSRAM) ❐ 25 ns and 45 ns access times ❐ Internally organized as 128 K × 8 (CY14B101KA) or