UN1116
Abstract: UNR1116 XP04116 XP4116
Text: Composite Transistors XP04116 XP4116 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 UNR1116(UN1116) x 2 elements • Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage
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XP04116
XP4116)
UNR1116
UN1116)
UN1116
XP04116
XP4116
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UN1116
Abstract: UNR1116 XP01116 XP1116
Text: Composite Transistors XP01116 XP1116 Silicon PNP epitaxial planer transistor Unit: mm 0.2±0.05 For switching/digital circuits 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 UNR1116(UN1116 )x 2 elements 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element
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XP01116
XP1116)
UNR1116
UN1116
UN1116
XP01116
XP1116
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UN1116
Abstract: UNR1116 XP06116 XP6116
Text: Composite Transistors XP06116 XP6116 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 UNR1116(UN1116) x 2 elements • Absolute Maximum Ratings 1 : Emitter (Tr1) 2 : Emitter (Tr2) 3 : Base (Tr2) (Ta=25˚C) Parameter
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XP06116
XP6116)
UNR1116
UN1116)
UN1116
XP06116
XP6116
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UN1116
Abstract: UNR1116 XN01116 XN1116
Text: Composite Transistors XN01116 XN1116 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UNR1116(UN1116) x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element
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XN01116
XN1116)
UNR1116
UN1116)
UN1116
XN01116
XN1116
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UN1116
Abstract: UN1216 UNR1116 UNR1216 XP04316 XP4316
Text: Composite Transistors XP04316 XP4316 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits 1 6 2 5 3 4 UNR1216(UN1216) + UNR1116(UN1116) • Absolute Maximum Ratings Parameter
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XP04316
XP4316)
UNR1216
UN1216)
UNR1116
UN1116)
UN1116
UN1216
XP04316
XP4316
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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Untitled
Abstract: No abstract text available
Text: Transistors with built-in Resistor UNR111x Series UN111x Series Silicon PNP epitaxial planar transistor Unit: mm 2.5±0.1 (1.0) R 0.9 M Di ain sc te on na tin nc ue e/ d • Costs can be reduced through downsizing of the equipment and reduction of the number of parts
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UNR111x
UN111x
UNR1110
UNR1111
UNR1112
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UN1116
Abstract: UNR1116 XN06116 XN6116
Text: Composite Transistors XN06116 XN6116 Silicon PNP epitaxial planer transistor Unit: mm +0.2 For switching/digital circuits 2.8 –0.3 +0.25 1.5 –0.05 Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current Symbol
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XN06116
XN6116)
UN1116
UNR1116
XN06116
XN6116
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UN1116
Abstract: UNR1116 XN04116 XN4116
Text: Composite Transistors XN04116 XN4116 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 • Absolute Maximum Ratings +0.1 +0.1 0 to 0.05 0.4±0.2 (Ta=25˚C) Symbol Ratings Unit Collector to base voltage
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XN04116
XN4116)
UN1116
UNR1116
XN04116
XN4116
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UN1116
Abstract: UNR1116 XN06116 XN6116
Text: Composite Transistors XN06116 XN6116 Silicon PNP epitaxial planer transistor ● 3 2 0.4±0.2 5° Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 2.8+0.2 –0.3
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XN06116
XN6116)
UNR1116
UN1116)
UN1116
XN06116
XN6116
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UN1116
Abstract: UN1216 UNR1116 UNR1216 XN04316 XN4316
Text: Composite Transistors XN04316 XN4316 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) ● 3 2 0.4±0.2 5˚ Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.
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XN04316
XN4316)
UNR1216
UN1216)
UNR1116
UN1116)
UN1116
UN1216
XN04316
XN4316
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UNR1110
Abstract: UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119
Text: Transistors with built-in Resistor UNR111x Series UN111x Series Silicon PNP epitaxial planar transistor Unit: mm For digital circuits 2.5±0.1 (1.0) R 0.9 R 0.7 0.55±0.1 (R1) 47 kΩ 10 kΩ 22 kΩ 47 kΩ 10 kΩ 10 kΩ 4.7 kΩ 22 kΩ 0.51 kΩ 1 kΩ
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UNR111x
UN111x
UN1110)
UN1111)
UN1112)
UN1113)
UN1114)
UN1115)
UN1116)
UN1117)
UNR1110
UNR1111
UNR1112
UNR1113
UNR1114
UNR1115
UNR1116
UNR1117
UNR1118
UNR1119
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UN1116
Abstract: UN1216 UNR1116 UNR1216 XN04316 XN4316
Text: Composite Transistors XN04316 XN4316 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 Parameter 3 0.4±0.2 1 : Collector (Tr1) 2 : Base (Tr2) 3 : Emitter (Tr2)
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XN04316
XN4316)
UNR1216
UN1216)
UNR1116
UN1116)
UN1116
UN1216
XN04316
XN4316
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UN1116
Abstract: UN1216 UNR1116 UNR1216 XP04316 XP4316
Text: Composite Transistors XP04316 XP4316 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) 0.2±0.05 5 6 ● 4 Features 0.2±0.1 Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.
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XP04316
XP4316)
UNR1216
UN1216)
UNR1116
UN1116)
UN1116
UN1216
XP04316
XP4316
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2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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XP06501T
XP06531
XP06545
XP0A554
XP0D873
XP0D874
XP0D875
2SC5936
2SC6073
PANASONIC TRANSISTOR 2SC6073
2sc5929
MN1280
transistor 2SC6073
2SC5936 equivalent
2SC6074
TRANSISTOR 2SC5929
2sc5928
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UN1116
Abstract: UNR1116 XP06116 XP6116
Text: Composite Transistors XP06116 XP6116 Silicon PNP epitaxial planer transistor 5 4 ● 0.2±0.1 5° • Features ● 0.12+0.05 –0.02 1.25±0.10 2.1±0.1 6 Unit: mm (0.425) 0.2±0.05 For switching/digital circuits Two elements incorporated into one package.
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XP06116
XP6116)
UNR1116
UN1116)
UN1116
XP06116
XP6116
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common collector PNP
Abstract: UNR1110 UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118
Text: Transistors with built-in Resistor UNR111x Series UN111x Series Silicon PNP epitaxial planar transistor Unit: mm For digital circuits (1.0) 4.1±0.2 2.0±0.2 2.4±0.2 (0.85) 0.45±0.05 0.55±0.1 (R1) 47 kΩ 10 kΩ 22 kΩ 47 kΩ 10 kΩ 10 kΩ 4.7 kΩ
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UNR111x
UN111x
UN1110)
UN1111)
UN1112)
UN1113)
UN1114)
UN1115)
UN1116)
UN1117)
common collector PNP
UNR1110
UNR1111
UNR1112
UNR1113
UNR1114
UNR1115
UNR1116
UNR1117
UNR1118
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UN1116
Abstract: UNR1116 XN01116 XN1116
Text: Composite Transistors XN01116 XN1116 Silicon PNP epitaxial planer transistor Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) ● Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.
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XN01116
XN1116)
UNR1116
UN1116)
UN1116
XN01116
XN1116
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1117 S Transistor
Abstract: 1117 S 1117 AT 1116 1117 UNR1111 UNR1112 UNR1113 UNR1114 UNR1115
Text: Transistors with built-in Resistor / 111D/111E/111F/111H/111L / 111D/111E/111F/111H/111L Unit: mm 2.5±0.1 6.9±0.1 (1.0) (1.0) (1.5) (1.5) R 0.9 For digital circuits
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111D/111E/111F/111H/111L
111D/111E/111F/111H/111L)
UNR1111
UNR1112
UNR1113
UNR1114
UNR1115
UNR1116
UNR1117
UNR1118
1117 S Transistor
1117 S
1117 AT
1116
1117
UNR1111
UNR1112
UNR1113
UNR1114
UNR1115
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UN1116
Abstract: UN1216 UNR1116 UNR1216 UP04316
Text: Composite Transistors UP04316 Silicon NPN epitaxial planar transistor Tr1 Silicon PNP epitaxial planar transistor (Tr2) 4 5˚ 2 3 (0.50)(0.50) 1.00±0.05 1.60±0.05 Display at No.1 lead 5˚ • Absolute Maximum Ratings Ta = 25°C Parameter Tr1 Symbol Rating
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UP04316
UN1116
UN1216
UNR1116
UNR1216
UP04316
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UNR1111
Abstract: UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119 B 47k 1112
Text: Transistors with built-in Resistor / 111D/111E/111F/111H/111L / 111D/111E/111F/111H/111L Unit: mm 2.5±0.1 6.9±0.1 (1.0) (1.0) (1.5) (1.5) R 0.9 For digital circuits
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111D/111E/111F/111H/111L
111D/111E/111F/111H/111L)
UNR1111
UNR1112
UNR1113
UNR1114
UNR1115
UNR1116
UNR1117
UNR1118
UNR1111
UNR1112
UNR1113
UNR1114
UNR1115
UNR1116
UNR1117
UNR1118
UNR1119
B 47k 1112
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1117 S Transistor
Abstract: UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119
Text: Transistors with built-in Resistor / 111D/111E/111F/111H/111L / 111D/111E/111F/111H/111L Unit: mm 6.9±0.1 Costs can be reduced through downsizing of the equipment and
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111D/111E/111F/111H/111L
111D/111E/111F/111H/111L)
UNR1111
UNR1112
UNR1113
UNR1114
UNR1115
UNR1116
UNR1117
UNR1118
1117 S Transistor
UNR1111
UNR1112
UNR1113
UNR1114
UNR1115
UNR1116
UNR1117
UNR1118
UNR1119
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UN1116
Abstract: UNR1116 XP04116 XP4116 "s 0425"
Text: Composite Transistors XP04116 XP4116 Silicon PNP epitaxial planer transistor 0.2±0.05 5 6 ● 4 Features 0.2±0.1 Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.
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XP04116
XP4116)
UNR1116
UN1116)
UN1116
XP04116
XP4116
"s 0425"
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UN1116
Abstract: UNR1116 XN04116 XN4116
Text: Composite Transistors XN04116 XN4116 Silicon PNP epitaxial planer transistor ● 3 2 0.4±0.2 Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 2.8+0.2 –0.3 6
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XN04116
XN4116)
UNR1116
UN1116)
UN1116
XN04116
XN4116
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