1 W NPN EPITAXIAL PLANAR TYPE Search Results

Contextual Info: MITSUBISHI RF POWER TRANSISTOR ooi?b?7 m m NPN EPITAXIAL PLANAR TYPE DISCRETION OUTLINE DRAWING 2SC3240 is a silicon NPN epitaxial planar type transistor specifically designed for high power amplifiers in HF band. Dimensions in mm FEATURES • High gain: Gpe^ 1 1 .5 d B r Po ^ 1 0 0 W

Contextual Info: SILICON PNP EPITAXIAL PLANAR TY PE SILICON NPN EPITAXIAL PLANAR TY PE RN4602 U n it in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS. + 0.2 2 .8 - 0.3 + 0.2 1. 6 - 0.1 • Including Two Devices in SM6 Super Mini Type w ith 6 leads

Contextual Info: BPW85 w m m f _ ▼ Vishay Telefunken Silicon NPN Phototransistor Description BPW85 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1 0 3 mm plastic package. Due to its waterclear epoxy the

2SD947

Abstract: Q005 2SD947 j Transistor 126m
Contextual Info: ROHN CO K7 > V 7 LTD MDE 7020^=1 D Q00SÖ23 $ / J ransistors 1 HRHN 2SD947 - 7 - Z Z - 2 ? i t 0* * v7 \,-yy—m npn ->•;=\>#-v>b> ‘ S H ^ S ^ ia 'tiffl/L o w Freq. Power Amp. Epitaxial Planar NPN Silicon Darlington Transistor

Contextual Info: b '~ 7> y FM W 3/FM W 4 /Transistors FM W 3 FMW 4 NPN y ' j 3 > h-?>5'Z9 — ilx'Mf •^■Jf'lSffl/General Small Signal Amp. Epitaxial Planar Dual Mini-Mold NPN Silicon Transistors K', V vJi-r • M M v jiim /D irn e n s io n s (U nit : mm 1) 7 . - / 1 - 5

4t marking

Abstract: 2SA1734 2SC4539 marking TB
Contextual Info: TOSHIBA TOSHIBA TRANSISTOR 2SC4539 SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC4539 Unit in mm PO W ER AM PLIFIER APPLICATIONS PO W ER SWITCHING APPLICATIONS 1.6MAX. 4.6MAX. 1.7MAX. : V ce (sat)“ 0.5V (Max.) (1(2 = 700mA) High Speed Switching Time : tgtg = 0.3;i*s (Typ.)

ic 11105 h

Contextual Info: h 7 > V ^ ^/Transistors 2SD1767 2SD1767 T £ $ * V T \ r f \ s —yf& NPN Epitaxial Planar NPN Silicon Transistor fl£U5fc 2jiil§ffl/Low Freq. Power Amp. • feft 1) • W f^ jilS l/D im e n sio n s Unit : mm) P C = 2 W T * 5 (40X 40X0.7mm * 7 $ . y

Contextual Info: 2SC2510 TO SHIBA 2 S C2 5 1 0 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm 2~30MHz SSB LINEAR PO W ER AM PLIFIER APPLICATIONS 28V SUPPLY VOLTAGE USE Specified 28V, 28MHz Characteristics Output Power Po = 150WpEP (Min.) Power Gain Gp = 12.2dB (Min.)

Contextual Info: TOSHIBA 2SC5257 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5257 Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS + 0.2 2.9-0.3 • • : NF = 1.5dB f=2GHz : Gain = lOdB (f = 2GHz) Low Noise Figure High Gain •fu— — -H 1 1

Contextual Info: h 7 > v ^ ^ / T ransistors 2 SD 17 6 0 2 SD 1 7 6 0 F5 2SD1760/2SD1760F5 NPN Freq. Power Amp. Epitaxial Planar NPN Silicon Transistors K:.V^T • W K T i £ 0 / ' D'mensions U n it: mm 1) Low V ce ( sat )= 0.5V (Typ.) Ic/I b =2A/0.2A 2) 2SB1184 • Features

Contextual Info: Tflsa'i'n 0GGSÔ7S 40E D ROHM CO LTD h -7 > ì? 7 , % /Transistors =1 IRHM 2SD1468/2SD1468S - 7=2 7 - 0 9 2SD14S3 2SD1468S NPN '>>;□> b T s v W ^ l l ^ i a ^ ^ / M e d i u m Power Amp. Epitaxial Planar NPN Silicon Transistors • 1 Vce t sat)=6mV at 1mA/0.1 mA)

D1380

Contextual Info: / T ransistors 2SD1380 X b 0^ d r '> 7 7^ 7 ° U - ^ - ^ NPN '> U = ] > h 7 > V 7 ‘l5 :J § }^ B ^ 3 iillif fl/L o w Freq. Power Amp. Epitaxial Planar NPN Silicon Transistor Dimensions U n it: mm 1 0 W C D > A ffl2 vr Vi V; V \li 2A, Pc = -r • V ceo =32V, IC =

TRANSISTOR 10003

Abstract: 2SB1085A 2SD1562A npn 10003 10003 NPN hFE-200 to-220 npn
Contextual Info: h "7 > v X £ / T ransistors 2SD1562A 2SD1562A NPN h 7 > v *$ 1 M j £ l i : f t i ^ [lllf f l/ L o w Freq. Power Amp. Epitaxial Planar NPN Silicon Transistor • • 1) \ f - & H / D im e n s io n s U n it : m m ) (B V c e o = 1 6 0 V ) o 2) A S C W '/£ l'o

TIC 122 Transistor

Abstract: bc 147 B transistor FOR TRANSISTOR BC 149 B BC 148 TRANSISTOR transistor 45 f 122 NPN transistor bc 148 transistor bc 146 BC 148 L transistor bc 148 transistor BC 157
Contextual Info: .2 5 C D • 023SbO S NPN Silicon Transistors GQGMCH? *? MSIEG ■ _ W ~/l SIEMENS A K T IE N G E S E L L S C H A F C 1 2 1 1 ! B C 122 ! - B C 123 Î BC 121, BC 122, and BC 123 are miniature epitaxial NPN silicon planar transistors in U 32

2SC5315

Contextual Info: 2SC5315 TO SHIBA TENTATIVE 2SC5315 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS CHIP : fT = 16GHz series + 0.5 2.5-0.3 + 0.25 • • , 1-5-°-15.| Low Noise Figure : NF = 1.3dB (f=2GHz)

Contextual Info: 2SC3011 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC3011 Unit in mm U H F-C BAND LO W NOISE AM PLIFIER APPLICATIONS High Gain Low Noise Figure High fp + 0.5 2.5-0.3 |S2lel2= 12dB Typ. NF = 2.3dB (Typ.), f=lG H z fT = 6.5GHz + 0.25 .1 .5 -0 .1 5 .

2SD1516

Abstract: ic 746
Contextual Info: P o w er T ra n s is to rs 2SD1516 2SD1516 Silicon NPN Epitaxial Planar Type Package D im ensions Pow er A m plifier, Pow er S w itching 10.5 1 0 .5 • Features • Low co llector-em itter satu ration vo ltag e VcEisao • Good linearity of DC cu rrent gain (hFE)

Contextual Info: h ~7 > v / 2SD1768S $ /Transistors 2SD 1768S NPN y V 3 > V y ' s v W ^ s tlfr ^ llffl/M e c liu m Power Amp. Epitaxial Planar NPN Silicon Transistor • W K -tf;£@ /D im ension s U n it: mm • 1) VCeo »' ^ (8 0 V ) o 2) U AD C)0 3 ) hFE<7) o 4 ) V c e ( sat

Contextual Info: h ~7 > V X $ /'Transistors 2SD1758/2SD1758F5 2SD1758 A Q Q J • NPN y ‘j 3 > V 7 > V * $ 7 C O E C # O O h O Freq. Power Amp. Epitaxial Planar NPN Silicon Transistors • W f5\H£IH/Diniensions Unit: mm k P c m a x = 1 0 W ( 7) > ) l f f l 2 < / 7 S4 >J V; V tJi t

2SD1856

Contextual Info: h 7 > 7 ^ ^ / T ransistors 2SD 1856 2SD1856 NPN '> V= t> & -V > b > l& J S i& liT jiii'liffl/L o w Freq. Power Amp. Epitaxial Planar NPN Silicon Darlington Transistor • £t-Jf£\H£|5l/Dimensions U n it: mm • « * 1) =l U 7 2 • a ; ' - X | aUc60VW y x E

HN3C16

Contextual Info: TOSHIBA HN3C16FT TENTATIVE TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C16FT Unit in mm V H F -U H F B A N D LO W NOISE AMPLIFIER APPLICATIONS 2.1 ± 0 .1 • TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6

Contextual Info: TOSHIBA 2SC4317 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4317 V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS Unit in mm + 0.5 2 .5 -0 .3 • Low Noise Figure, High Gain • N F = l.ld B , |S21el2= 13dB f=lG H z + 0.25 . 1 .5 -0 .1 5

Contextual Info: Is ~7 > V 7. £ / I ransistors 2SD2132 2SD2144S 2SD2132/2SD2144S NPN '> • ; = ! > h 7 > y ^ ^ Epitaxial Planar NPN Silicon Transistors • W f^THiEfl/Dim ensions Unit: mm 1) hFE hFE=1200 (Typ.)o 5 v 2 • 2) I Vebo = 12V (Min.) 3) U L F bI I MP I H Vce (sa t)*'" ^

FMW5 T148

Contextual Info: h "7 > V X $ / T ransistors P I I I I I C H f l WW W FMW5 NPN '> '; = ! > h 7 > V ^ ^ — ftx/Jv'fi,§ - l i lHffl/General Small Signal Amp. Epitaxial Planar Dual Mini-Mold NPN Silicon Transistor • 7 rff2 \b £ !II// Dimensions Unit : mm 1| X - M ' - J Z t - A