40X40X0 Search Results

Contextual Info: IC SMD Type Product specification 2SA1900 Features Low saturation voltage, typically VCE sat = ?0.15V at IC / IB = ?500mA / ?50mA PC=2W (on 40X40X0.7mm ceramic board) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-emitter Voltage

2SC5053

Abstract: 2SA1900 T100 2SA1900Q oc pnp sc62
Contextual Info: bÿ 2SA1900 £ /Transistors Q Q Q x k f $ * ì / 7 J i ' 7 \ s - J ' ì & pnp v ' ; = i > h 7 > v * £ 9 C A 4 Epitaxial Planar PNP Silicon Transistor /Medium Power Amp. * W fN'üEl./Dim ensions Unit : mm 1) Pc=2W T'&Z (40X40X0.7mm Hz 2) L o w V c E ( s a t ) = — 0 1 5 V (T yp.)

Contextual Info: DC AXIAL FAN 40x40x07mm US •; M o de N u m b e r V o lta g e VDC O p.V o lta ge (VDC) FD4007B05W 5-71 5 FD4007B05W 7-71 5 FD4007B12W 5-71 12 C€ .W FD4007B12W 7-71 SS tw 12 SF A irF lo w (CFM) StaticPres. (m m -H 20) Noise . (dBA) 4 .0 -5 5 5.50 2.50

2SA1900

Abstract: 40X40X0
Contextual Info: Transistors IC SMD Type Medium power transistor 2SA1900 Features Low saturation voltage, typically VCE sat = ?0.15V at IC / IB = ?500mA / ?50mA PC=2W (on 40X40X0.7mm ceramic board) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-emitter Voltage

2SC5053

Abstract: W0401
Contextual Info: h 2SC5053 /'Transistors i~M NPN v U = 3 > h -7 Epitaxial Planar NPN Silicon Transistor O C / * C f C O » w w O w ^ O /Medium Power Amp. • 1 $ £ 13/Dimensions Unit : mm) 1) P c= 2 W T'£>3 (40X40X0.7mm iz 7 5 7 ? & m m )o 2) Low Vce ( s a t) = 0 .1 2V

Contextual Info: h ~7 > V 7 s $ / T ransistors 2SB1188 2SB1188 Epitaxial Planar PNP Silicon Transistor 4 ,^ ^JiSlliffl/Medium Power Amp. • • W fir l'jill/ D im e n s io n s U n it: mm W ft 1) U U ? * S * P c = 2W T'& * o (40X40X0.7mm-fe 2) VcE(sat) 1. 6 ± 0 . I VcE(sat)=-0.2V(Typ.)

Contextual Info: 2SD2391 h 7 > '/ ^ £ /Transistors 2SD2391 NPN * > U = l > b 7 > ' s Z * Epitaxial Planar NPN Silicon Transistor 4,^ l ^ i i |ÜÆ /Medium Power Amp. 1^ fi5\fîÈ0 /Dimensions Unit : mm 1) V c E O = 6 0 V T * 5 o 2) 3 U ' ? $ 1 * £ P c = 2 W T '* - 5 (40X40X0.7mm -fe 7 5

Contextual Info: 2SC5824 Datasheet NPN 3.0A 60V Middle Power Transistor Outline Parameter Value VCEO IC 60 3A MPT3 Base Collector Emitter 2SC5824 SC-62 <SOT-89> Features 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SA2071 3) Low VCE(sat) VCE(sat)=0.50V(Max.)

2SCR514p

Contextual Info: 2SAR514P Datasheet PNP -0.7A -80V Middle Power Transistor lOutline Parameter Value VCEO IC -80V -0.7A MPT3 Base Collector Emitter 2SAR514P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SCR514P 3) Low VCE(sat)

Contextual Info: 2SC5824 Datasheet NPN 3.0A 60V Middle Power Transistor lOutline Parameter Value VCEO IC 60 3A MPT3 Base Collector Emitter 2SC5824 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SA2071 3) Low VCE(sat) VCE(sat)=0.50V(Max.)

2SCR514R

Contextual Info: 2SAR514R Datasheet PNP -0.7A -80V Middle Power Transistor lOutline Parameter Value VCEO IC -80V -0.7A TSMT3 Collector Base Emitter 2SAR514R SC-96 lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SCR514R 3) Low VCE(sat) VCE(sat)= -0.4V(Max.)

Contextual Info: 2SA2701 / 2SA2702 Datasheet PNP -3.0A -60V Middle Power Transistor lOutline Parameter Value VCEO IC -60V -3.0A MPT3 Collector CPT3 Base Collector Base Emitter Emitter 2SA2071 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SC5824 / 2SC5825

RS1e240

Contextual Info: RS1E240GN Nch 30V 24A Power MOSFET Datasheet lOutline VDSS 30V RDS on at 10V (Max.) 3.3mW RDS(on) at 4.5V (Max.) 4.4mW ID 24A PD 3.0W lFeatures HSOP8 lInner circuit 1) Low on - resistance. 3) Pb-free lead plating ; RoHS compliant (1) Source (2) Source (3) Source

FCX718TA

Abstract: FCX718
Contextual Info: SOT89 PNP SILICON POWER SWITCHING TRANSISTOR FCX718 ISSSUE 1 - DECEMBER 1998 FEATURES * 2W POWER DISSIPATION * * * * 6A Peak Pulse Current Excellent HFE Characteristics up to 6Amps Extremely Low Saturation Voltage E.g. 16mv Typ. Extremely Low Equivalent On-resistance;

Contextual Info: 2SCR553P Datasheet NPN 2.0A 50V Middle Power Transistor lOutline Parameter Value VCEO IC 50V 2.0A MPT3 Base Collector Emitter 2SCR553P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SAR553P 3) Low VCE(sat) VCE(sat)=0.35V(Max.)

Contextual Info: Midium Power Transistors 80V / 2.5A 2SCR544R  Structure NPN Silicon epitaxial planar transistor  Dimensions (Unit : mm) TSMT3 1.0MAX  Features 1) Low saturation voltage, typically VCE (sat) = 0.3V (Max.) (IC / IB= 1A / 50mA) 2.9 0.85 0.4 0.7 1.6

smd transistor marking br

Abstract: smd transistor marking da smd marking DA transistor SMD DA MARKING SMD TRANSISTOR P SMD BR 32 DA SMD transistor smd marking smd transistor marking 1 da transistor 2SD1664
Contextual Info: Transistors SMD Type Medium Power Transistor 2SD1664 Features Low VCE sat Compliments to 2SB1132 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 32 V Emitter-Base Voltage VEBO 5

2SC5053

Contextual Info: Transistors SMD Type Medium Power Transistor 2SC5053 Features Low saturation voltage, typically VCE sat = 0.12V at IC / IB = 500mA / 50mA. PC=2W (on 40x40×0.7mm ceramic board). Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage

Contextual Info: SMD Type Type SMD Transistors IC Product specification 2SC5053 Features Low saturation voltage, typically VCE sat = 0.12V at IC / IB = 500mA / 50mA. PC=2W (on 40x40×0.7mm ceramic board). Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage

Contextual Info: SMD Type Product specification 2SB1132 Features Low VCE sat Compliments to 2SD1664 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -32 V Emitter-Base Voltage VEBO -5 V -1 A Collector Current

2SA2071

Abstract: 2SC5824 T100
Contextual Info: Power transistor 60V, 3A 2SA2071 Features 1) High speed switching. (Tf : Typ. : 20ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 0.2A) 3) Strong discharge power for inductive load and capacitance load.

2SD1733

Abstract: 2SB1181 2SB1241 2SB1260 2SD1768S 2SD1863 2SD1898 SC-72
Contextual Info: 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 Transistors Power Transistor 80V, 1A 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 !External dimensions (Unit : mm) 2SD1898 1.5 +0.2 −0.1 2.5+0.2 −0.1 4.0±0.3 0.5±0.1 4.5+0.2 −0.1 1.6±0.1 (1) 1.0±0.2 !Features 1) High VCEO, VCEO=80V

10003 NPN

Abstract: STD1664 STB1132 a2 sot-89 KST-8004-001 TRANSISTOR 10003
Contextual Info: STD1664 Semiconductor NPN Silicon Transistor Description • Medium power amplifier application Features • PC Collector dissipation =2W(Ceramic substate of 40x40×0.8mm used) • Low collector saturation voltage : VCE(sat)=0.15V(Typ.) • Complementary pair with STB1132

STB1132

Abstract: STD1664
Contextual Info: STB1132 Semiconductor PNP Silicon Transistor Description • Medium power amplifier Features • PC Collector dissipation =2W(Ceramic substate of 40x40×0.8mm used) • Low collector saturation voltage : VCE(sat)=-0.2V(Typ.) • Complementary pair with STD1664