1-35 D5 Search Results

ELPAC WM063-1950-D5

Abstract: WM112-D5 ELPAC WM072-1950-D5 W4221-D5 W4231-D5 W4232-D5 WM053-D5 WM063-1950-D5 WM070-1950-D5
Contextual Info: Page 1 o f2 WMPAGE34 WsL M ultiple Output Regulated Power Supplies Selection Guide i n no r - ^ —1 HO: J «=ü f moi r i Amps ¡Watts PA GE# Elpac Part # 35 0 18 5 3 WM053-D5 35 0.16 _6.3 WM063-1950-05 -7 35 WM070-1950-05 35 - J 12.4 WM112-05 0.3 11.3

SMARTCARD micromodule assembly

Abstract: ST14C02 M14C04 M14C16 M14C32 M14C64 ST1200 ST1305B ST1331 ST1333
Contextual Info: SUPER 35 MM MICROMODULES Super 35 mm Micromodules for Smartcards and Memory Cards DATA BRIEFING • Micromodules were developed specifically for embedding in Smartcards and Memory Cards ■ The Micromodule provides: potting side 1 1 1 1 1 1 – Support for the chip

SX8634

Abstract: SX864x SX863x SX8645EVK program of seven push buttons lighting on LEDs Sx863xSX864xEVK FT2232D SX8645 SX8648 sc153
Contextual Info: User’s Guide SX8634/35/44/45 Evaluation Kit ADVANCED COMMUNICATIONS & SENSING SX8634/35/44/45 Evaluation Kit User's Guide Rev 0.9 – September 2010 1 www.semtech.com User’s Guide SX8634/35/44/45 Evaluation Kit ADVANCED COMMUNICATIONS & SENSING Table of Contents

Contextual Info: 128K x 32 SRAM Module TIGA2S4000 -20/25/35 TIGA6S4000/A/B-20/25/35 TIGA7S4000/A/B-20/25/35 Force Technologies Ltd. www.forcetechnologies.co.uk Tel. +44 0 1264 731200 Fax. +44 (0)1264 731444 Issue 1 2005 Description Features Available in PGA (TIGA 2), JLCC (TIGA 6) and

EY86

Abstract: HX33 HX31 diode d5c HS40-4 diode D6E HS40A ZC0300 ZC0310 1N5149
Contextual Info: S ILIC O N DIODES Step Recovery Diodes R .F. Po w er Output Type M ax. V r d .c. volts 1N 5149 1N 5150 1N5151 1N 5152 1N5153 1N5154 1N5155 ZC 62 0 ZC 03 0 0 ZC 03 1 0 80 80 75 75 75 35 35 35 75 40 c to t * pF Min. 5-0 50 50 50 50 1 0 1 0 0-6 2-5 1 -9 M ax.

HI1106

Contextual Info: 2 m a r !? H I 1 1 0 6 , C X A 1 1 0 6 8-Bit 35 MSPS June1996 High-Speed D/A Converter TTL Input) Features Description • R eso lu tio n . 8-Bit The HI1106, C X A 1 106 is an 8-bit 35 M S P S high-speed D/A

51256

Abstract: 51256-20
Contextual Info: intei 51256 HIGH SPEED 32K x 8-BIT STATIC RAM 51256-20 Max Access Time ns 2 0 Max. Active Current (mA) Max Standby Current (mA) 51256-25 51256-30 51256-35 25 30 35 1 0 0 1 0 0 1 0 0 1 0 0 30 30 30 30 Static Operation — No Clock/Refresh required 2V Data Retention Option Available

MGDSI-35

Contextual Info: Industrial DC/DC CONVERTER MGDI-35 Wide Input : 35W POWER Industrial Grade 4:1 Wide Input Single, Bi & Triple Outputs Metallic Case - 1 500 VDC Isolation • Wide input range • Nominal power up to 35 W • Wide temperature range : -40°C/+95°C case • High efficiency typ. 84%

Contextual Info: H I 110 6 , C X A 1 1 0 6 8 -B it 35 M SPS H igh-S peed D /A C o n verter T T L Inp ut February 1996 Features Description • The H11106, CXA1106 is an 8-bit 35 MSPS high-speed D/A

P4C198

Abstract: P4C198A 3CE12
Contextual Info: P4C198/P4C198L, P4C198A/P4C198AL ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell 5V ± 10% Power Supply High Speed Equal Access and Cycle Times -10 /1 2 /1 5 /2 0 /2 5 ns (Commercial) - 12/15/20/25/35 ns (Industrial) - 15/20/25/35/45 ns (Military)

Contextual Info: UPD71055G 1/2 IL00D C-MOS PARALLEL INTERFACE UNIT WR P07 P06 P05 P04 P03 P02 P01 RD P00 —TOP VIEW— 44 43 42 41 40 39 38 37 36 35 34 NC INDEX NC 33 1 NC CS 2 3 2 CS 4 30 D1 A0 5 29 D2 35 P27 6 28 D3 44 P26 7 27 D4 P25 8 26 D5 P24 9 25 D6 P20 10 24 D7

Contextual Info: 16K x 16 SRAM MS1616VKX-25/35/45 m o la te Issue 1.2 : March 1990 ADVANCE PRODUCT INFORMATION f— Sem iconductor inc. 1 . Pin Definition 16,384 x 16 CMOS High Speed Static RAM Features DO D1 D2 D3 A0 A1 A2 A3 A4 A5 A6 A7 D4 D5 D6 D7 CE GND Very Fast Access Times of 25/35/45 ns

capacitor 100 nf

Abstract: smd crystal c105
Contextual Info: User Manual Rev. 1.1 CC2400DK Development Kit SWRU050 Page 1 of 35 Table of contents INTRODUCTION . 3 EVALUATION MODULE. 4

Contextual Info: , % - . =69 463+> 3'?1> / - @5 . 3'( 6? 5? => >= / - @5 . A>:3?A (31: 61:>1 35 8 / - @5 . ' < > :>+3'4 " < * 1 # "&B ,!C " " $ "! !$ $ !, # $ # ! ! " ," B & " !, , ' < > B D # ,! # & # 2 # ! " 2 B B! %$ ! & !, <! 1 " D $ :; # $## & $# !, / " 6* ! +$ A $! # D ,

Contextual Info: Industrial DC/DC CONVERTER MGDI-35 Wide Input : 35W POWER Industrial Grade 4:1 Wide Input Single, Bi & Triple Outputs Metallic Case - 1.500 VDC Isolation • Wide input range • Nominal power up to 35 W • Wide temperature range : -40°C/+ 95° case • High efficiency typ. 84%

MGDSI-35

Abstract: MGDI-35 MGDTI-35 MGDBI-35-Q-E
Contextual Info: Industrial DC/DC CONVERTER MGDI-35 Wide Input : 35W POWER Industrial Grade 4:1 Wide Input Single, Bi & Triple Outputs Metallic Case - 1.500 VDC Isolation • Wide input range • Nominal power up to 35 W • Wide temperature range : -40°C/+95°C case • High efficiency typ. 84%

MGDTI

Contextual Info: Industrial DC/DC CONVERTER MGDI-35 Wide Input : 35W POWER Industrial Grade 4:1 Wide Input Single, Bi & Triple Outputs Metallic Case - 1.500 VDC Isolation • Wide input range • Nominal power up to 35 W • Wide temperature range : -40°C/+95°C case • High efficiency typ. 84%

IPDM41024S

Abstract: PDM41024
Contextual Info: PARADIGM 1 M egabit Static RAM 128K x 8-Bit PDM41024S PDM41024L Features Description □ High speed access times Com'l: 20, 25, 35 and 45ns M il: 20, 25, 35, 45, and 55ns □ Low pow er operation - PDM 41024S Active: 400m W typ. Standby: 150 m W (typ.) - PD M 41024L

Contextual Info: SiS778DN Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)e 0.0050 at VGS = 10 V 35 0.0062 at VGS = 4.5 V 35 VDS (V) 30 Qg (Typ.) 13.3 nC PowerPAK 1212-8 S 3.30 mm 3.30 mm 1 APPLICATIONS S 2

Contextual Info: SiS778DN Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)e 0.0050 at VGS = 10 V 35 0.0062 at VGS = 4.5 V 35 VDS (V) 30 Qg (Typ.) 13.3 nC PowerPAK 1212-8 S 3.30 mm 3.30 mm 1 APPLICATIONS S 2

Contextual Info: SiS778DN Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)e 0.0050 at VGS = 10 V 35 0.0062 at VGS = 4.5 V 35 VDS (V) 30 Qg (Typ.) 13.3 nC PowerPAK 1212-8 S 3.30 mm 3.30 mm 1 APPLICATIONS S 2

Contextual Info: SiS778DN Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)e 0.0050 at VGS = 10 V 35 0.0062 at VGS = 4.5 V 35 VDS (V) 30 Qg (Typ.) 13.3 nC PowerPAK 1212-8 S 3.30 mm 3.30 mm 1 APPLICATIONS S 2

Contextual Info: MIL-STD-1560 Insert Arrangements Pin Front View for MIL-DTL-38999 Series I, II and III Connectors MIL–DTL– 38999 S I Insert Arrangement Views C 5 4 3 1 D A B 1 6 A E A A 10 B 2 B C B D 9-35/8-35 A35, 6 # 22D, M 9-98/8-98 A98, 3 # 20, I 11-4 B4, 4 # 20, I

Contextual Info: RMW Heat-Shrinkable, Medium Wall, Polyolefin Tubing W1 DD W d Table 1: Dimensions Size Minimum Expanded I.D. D in. mm. 10/3 .394 10 16/5 .630 16 25/8 .984 25 35/12 1.378 35 50/16 1.968 50 63/19 2.480 63 75/22 2.953 75 85/25 3.346 85 95/29 3.740 95 115/34