PDM41024L Search Results

CA1327

Abstract: DM-4102
Contextual Info: PDM41024S PDM41024L Paradigm 1 Megabit Static RAM 128Kx 8-Bit Features Description □ High speed access times Com'l: 20, 25, and 35 ns In d .: 20,25, and 35 ns The PDM41024 is a high-performance CMOS static RAM organized as 131,072 x 8 bits. This product is

PDM41024

Contextual Info: PDM41024 1 Megabit Static RAM 128K x 8-Bit Description Features n High-speed access times Com’l: 10, 12 and 15 ns Ind’l: 12 and 15 ns n Low power operation typical - PDM41024SA Active: 450 mW Standby: 50 mW - PDM41024LA Active: 400 mW Standby: 25mW n

Contextual Info: PARADIGM 1 Megabit Static RAM 128K x 8-Bit PDM41024S PDM41024L Features Description □ High speed access times Com'l: 20, 25, 35 and 45ns M il: 20, 25, 35,45, and 55ns □ Low power operation - PDM41024S Active: 400mW typ. Standby: 150 mW (typ.) - PDM41024L

Contextual Info: tlAK 7 1991 PARADIGM 1 Megabit Static RAM 128K x 8-Bit PDM41024S PDM41024L Features Description □ High speed access times Com'l: 20 ,2 5 ,3 5 and 45ns M il: 25, 35, 45, and 55ns □ Low power operation - PDM41024S Active: 400m W typ. Standby: 400m W (typ.)

IPDM41024S

Abstract: PDM41024
Contextual Info: PARADIGM 1 M egabit Static RAM 128K x 8-Bit PDM41024S PDM41024L Features Description □ High speed access times Com'l: 20, 25, 35 and 45ns M il: 20, 25, 35, 45, and 55ns □ Low pow er operation - PDM 41024S Active: 400m W typ. Standby: 150 m W (typ.) - PD M 41024L

Z312

Abstract: ZA24A PDM41024
Contextual Info: Features Description □ High speed access times Com'l: 20 ,2 5 ,3 5 and 45ns M il: 20, 25,35,45, and 55ns □ Low power operation - PDM41024S Active: 400mW typ. Standby: 150 mW (typ.) - PDM41024L Active: 350mW (typ.) Standby: 100 mW (typ.) □ Single +5V (±10%) power

Contextual Info: PARADIGM TECHNOLOGY INC 5QE blMltHO T> 0DD01b3 2 «PAT "TWlrlVtM P a r a d k m I 1 Megabit Static RAM 128K x 8-Bit PDM41024S PDM41024L Features Description □ High speed access times The PDM41024 is a high performance CMOS static RAM organ­ ized as 131,072 x 8 bits. This product is produced in Paradigm's

Contextual Info: P a r a e ïg m PDM41024S PDM41024L ' blMlCHÜ D D D 0 3 cn 534 1 Megabit Static RAM 128Kx 8-Bit IPAT Features Description □ High speed access times Com'l: 25,35 and 45ns M il: 2 5 ,3 5 ,4 5 , and 55ns The PDM41024 is a high performance CMOS static RAM organized as 131,072 x 8 bits. This product is

Contextual Info: PDM41024SA PDM41024LA Paradigm 1 Megabit Static RAM 128Kx 8-Bit Features Description □ H igh speed access times Com 'l: 1 0,12,15,17, 20 and 25 ns Ind'l: 15,17,20, and 25 ns The PDM41024 is a high-performance CM OS static RAM organized as 131,072 x 8 bits. This product is

Contextual Info: PARADIGM 1 Megabit Static RAM 128K x 8-Bit PDM41024S PDM41024L Features Description □ High speed access times Com'l: 20 ,2 5 ,3 5 and 45ns M il: 2 0 ,2 5 ,3 5 ,4 5 , and 55ns □ Low power operation - PDM41024S Active: 400mW typ. Standby: 150 mW (typ.)

Contextual Info: Paradigm' fc^mcno PDM41024SA PDM41024LA OQODBTl H43 Ip * t 1 Megabit Static RAM 128Kx 8-Bit Features Description □ High speed access times Com'l: 12,15,17,20 and 25ns Ind'l: 20,25, and 35ns M il: 20,25, and 35ns The PDM41024 is a high performance CMOS static

Contextual Info: Paradigm ' PDM41024 1 Megabit Static RAM 128K x 8-Bit Features Description □ High-speed access times Com'l: 1 0 ,1 2 ,1 5 ,1 7 and 20 ns Ind'l: 12,15,17 and 20 ns The PDM41024 is a high-performance CMOS static RAM organized as 131,072 x 8 bits. This product is

km681001j-20

Abstract: TC55B328J-12 256Kx4 TC55B465J10 TC55B8128J20 PDM41028SA-15SO TC55B8128J-12 TC55328J-20 KM681001J-25 PDM41024S20
Contextual Info: Cross Reference Guide Cross Reference Guide ALLIANCE VS PARADIGM AS7C1024-10TJ AS7C1024-12TJ AS7C1024-15TJ AS7C1024-20TJ AS7C1024L-10TJ AS7C1024L-12TJ AS7C1024L-15TJ AS7C1024L-20TJ AS7C1028-10TJ AS7C1028-12TJ AS7C1028-15TJ AS7C1028-20TJ AS7C1028L-10TJ AS7C1028L-12TJ

upd431000-70

Abstract: 628128 UPD431000-12 AR181 32PIN MCM6226A-20 MCM6226A-25 MCM6226A-30 MCM62L26A-25 MCM62L26A-35
Contextual Info: 149 IM m ïâÆ iËB « CC CMOS A 4 ? TAAC max ns) TCAC max (ns) TOE max (ns) TOH Bin (ns) S t a t i c i' y TOD •ax (ns) R A M (1 3 1 , 0 7 2 x 8 ) w. ft ft TWP ■in (ns) TDS min (ns) TDH min (ns) TWD ■in (ns) TtR max (ns) V D D or V C C (V) 3 2 P I N

mn4117405

Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
Contextual Info: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE

PDM41024S25

Abstract: CY7C1009-20DMB SMJ5C1008-25HMM 5962-89598 qml-38535 S128K8L-55MC pdm41024l25tcb PDM41024-S20L32 PDM41024L20TCB GDIP1-T32
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED E Redrawn with changes. Update case X to standard package. Add case 8. Add vendor CAGE 66301 as source of supply for case 8. Convert document to updated SMD boilerplate. Editorial changes throughout. 93-09-30

UM61256AK-15

Abstract: UM61256ak sram um61256ck-20 HY62256ALP10 XL93LC46AP w24m257 GVT7164D32Q-6 km62256blg-7 w24m257ak-15 UM61256
Contextual Info: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM FLASH MICROCONTROLLER SERIAL FLASH JULY 1998 Integrated Silicon Solution, Inc. CP005-1E 7/1/98 1 ISSI CROSS REFERENCE GUIDE

Contextual Info: Paradigm ' PDM41024 1 Megabit Static RAM 128K x 8-Bit Features Description □ High-speed access times Com'l: 10,12 and 15 ns Ind'l: 12 and 15 ns The PDM41024 is a high-performance CMOS static RAM organized as 131,072 x 8 bits. Writing is accomplished when the write enable WE and the

PDM41024

Contextual Info: PDM41024 1 Megabit Static RAM 128K x 8-Bit Features Description • High-speed access times Com’l: 10, 12, 15, 17 and 20 ns Ind’l: 12, 15, 17 and 20 ns The PDM41024 is a high-performance CMOS static RAM organized as 131,072 x 8 bits. This product is produced in Paradigm’s proprietary CMOS

um61256ak-15

Abstract: w24m257ak-15 um61256 um61256ck-20 um61256ak-12 km62256blg-7 KM68257Bp-20 W24M257AK HY6264ALP-10 w24M257
Contextual Info: ISSI Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM/NVM Serial EEPROM EPROM FLASH Static RAM SEPTEMBER 1996 CROSS REFERENCE GUIDE E2PROM ATMEL ISSI MIL PACKAGE SYMBOL PC P SC G SC GR AT93C46-10PC AT93C46-10PC-2.7 AT93C46-10SC AT93C46-10SC-2.7

LT3973-3.3

Abstract: 5962-8959821MMA 5962-89598 qml-38535 5962-8959824 5962-8959838MZA EDI88128CS15TB EDI88130LPS100L32B S128K8 S128K8-85MC
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED H Add device type 41. Make corrections to case outline N, dimension b. Add vendor CAGE 65786 as source of supply for device type 41. Update boilerplate. Editorial changes throughout. 97-03-26 Raymond Monnin

PDM41257SA15D

Abstract: Paradigm 41256 PDM41024S20L32 PDM41024-S20L32 PDM41257LA15D MT5C1005C CY7C199-35DMB SRAM Cross Reference EDI84256LPS25TB 41256
Contextual Info: National Semiconductor Part Numbering System N S 41024 L 20 E -SMD Grade Package Code Speed Grade Power Level Device Type /883 MIL-STD-883 Level B AC/DC tested at –55, +25 and +125°C with High Temp Burn-in -SMD DESC Standard Military Drawing AC/DC tested at –55, +25 and +125°C with High Temp Burn-in