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    1.0K 250 Price and Stock

    Omega Engineering 310-K-250-SLE-EM

    THERMOCOUPLE MI CABLE, K TYPE, 0
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    DigiKey 310-K-250-SLE-EM Bulk 10
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    Avnet Americas 310-K-250-SLE-EM Bulk 5 Weeks 1
    • 1 $4.68415
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    Newark 310-K-250-SLE-EM Bulk 1
    • 1 $4.68
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    RS 310-K-250-SLE-EM Bulk 5 Weeks 1
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    Rochester Electronics LLC EPF10K250AGC599-2

    LOADABLE PLD, 0.6NS CPGA599
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    DigiKey EPF10K250AGC599-2 Bulk 1
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    Rochester Electronics LLC EPF10K250ABC600-2

    LOADABLE PLD, 0.6NS PBGA600
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    DigiKey EPF10K250ABC600-2 Bulk 1
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    Rochester Electronics LLC EPF10K250AGC599-1

    LOADABLE PLD, 0.5NS CPGA599
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    DigiKey EPF10K250AGC599-1 Bulk 1
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    Rochester Electronics LLC EPF10K250AGC599-3

    LOADABLE PLD, 0.7NS CPGA599
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    DigiKey EPF10K250AGC599-3 Bulk 1
    • 1 $637.01
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    1.0K 250 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    200G

    Abstract: WHAR025FE WNAR025FE whc200fe
    Text: Miniature Molded Wirewound Resistors WH/WN Series 0.984 / 25 L � Power Resistance Rating Range Type watts (Ω) WHA 0.5 0.100 - 1.0K WNA 0.100 - 250 WHB 1 0.100 - 4.0K WNB 0.100 - 1.0K WHC 2 0.10 - 8.0K WNC 0.10 - 2.0K D d � Dim. L (mm/in) 5.08 / 0.200


    Original     		PDF MIL-R-26F, MIL-STD-202 WNC250FE WNC330FE WNC470FE WNC560FE WNC75RFE WNC100FE WNC150FE WNC200FE 200G WHAR025FE WNAR025FE whc200fe

    7B 100

    Abstract: white led 1w 3w 150 resistor resistor 330 Ohm led resistor 330 Ohm DATA SHEET red yellow gold gold resistor resistor 1W resistor 2w 200G led 2w
    Text: Miniature Molded Wirewound Resistors WH/WN Series 0.984 / 25 L � Power Resistance Rating Range Type watts (Ω) WHA 0.5 0.100 - 1.0K WNA 0.100 - 250 WHB 1 0.100 - 4.0K WNB 0.100 - 1.0K WHC 2 0.10 - 8.0K WNC 0.10 - 2.0K D d � Dim. L (mm/in) 5.08 / 0.200


    Original     		PDF MIL-R-26F, MIL-STD-202 WNC10RFE WNC15RFE WNC25RFE WNC51RFE WNC750FE 1-866-9-OHMITE 7B 100 white led 1w 3w 150 resistor resistor 330 Ohm led resistor 330 Ohm DATA SHEET red yellow gold gold resistor resistor 1W resistor 2w 200G led 2w

    wnb4

    Abstract: MIL-R-26F ISAOHM
    Text: Miniature Molded Wirewound Resistors WH/WN Series 0.984 / 25 L � Power Resistance Rating Range Type watts (Ω) WHA 0.5 0.100 - 1.0K WNA 0.100 - 250 WHB 1 0.100 - 4.0K WNB 0.100 - 1.0K WHC 2 0.10 - 8.0K WNC 0.10 - 2.0K D d � Dim. L (mm/in) 5.08 / 0.200


    Original     		PDF MIL-R-26F, MIL-STD-202 precisioWNB10RFE WNB15RFE WNB25RFE WNB51RFE WNB75RFE WNB100FE WNB150FE WNB200FE wnb4 MIL-R-26F ISAOHM

    Untitled

    Abstract: No abstract text available
    Text: Miniature Molded Wirewound Resistors WH/WN Series 0.984 / 25 L � Power Resistance Rating Range Type watts (Ω) WHA 0.5 0.100 - 1.0K WNA 0.100 - 250 WHB 1 0.100 - 4.0K WNB 0.100 - 1.0K WHC 2 0.10 - 8.0K WNC 0.10 - 2.0K D d � Dim. L (mm/in) 5.08 / 0.200


    Original     		PDF MIL-R-26F, MIL-STD-202 WNB15RFE WNB25RFE WNB51RFE WNB75RFE WNB100FE WNB150FE WNB200FE WNB250FE

    Untitled

    Abstract: No abstract text available
    Text: Miniature Molded Wirewound Resistors WH/WN Series 0.984 / 25 L � Power Resistance Rating Range Type watts (Ω) WHA 0.5 0.100 - 1.0K WNA 0.100 - 250 WHB 1 0.100 - 4.0K WNB 0.100 - 1.0K WHC 2 0.10 - 8.0K WNC 0.10 - 2.0K D d � Dim. L (mm/in) 5.08 / 0.200


    Original     		PDF MIL-R-26F, MIL-STD-202 WNB25RFE WNB51RFE WNB75RFE WNB100FE WNB150FE WNB200FE WNB250FE WNB330FE

    Ceramtec 708

    Abstract: sumicon 1100 ISAOHM PULSE SPOT-WELDING CNC MACHINE resistor 1W PRECISION 1.0K 250 F 1.0K 250 TO10 package Type Transistors 702
    Text: Miniature Molded Wirewound Resistors WH/WN Series 0.984 / 25 Power Resistance Rating Range Type watts (Ω) WHA 0.5 0.100 - 1.0K WNA 0.100 - 250 WHB 1 0.100 - 4.0K WNB 0.100 - 1.0K WHC 2 0.10 - 8.0K WNC 0.10 - 2.0K L D d Dim. L (mm/in) 5.08 / 0.200 Dim. D


    Original     		PDF 15min. MIL-STD-202 500Encapsulation: 1-866-9-OHMITE Ceramtec 708 sumicon 1100 ISAOHM PULSE SPOT-WELDING CNC MACHINE resistor 1W PRECISION 1.0K 250 F 1.0K 250 TO10 package Type Transistors 702

    Untitled

    Abstract: No abstract text available
    Text: 603PGA100A Thyristors Gate Turn Off Thyristor GTO V(DRM) Max. (V)1.0k V(RRM) Max. (V)1.0k I(T) Rated Maximum (A)250² @Temp. (øC) (Test Condition) I(TSM) Max. (A)2.5k @ t(w) (s) (Test Condition) I(GT) Max. (A)1.0 V(GT) Max.(V)1.0 I(H) Max. (A) Holding Current20Â


    Original     		PDF 603PGA100A Current20Ã Current50m StyleTO-200var56W Code4-41

    CLAROSTAT 485

    Abstract: No abstract text available
    Text: Model 585 & 586 Consumer 585 DUAL Series 585 Series 586 500 ohm to 2.0 meg ohm 1.0K-ohm to 1.0meg-ohm 500 ohm to 2.0 meg ohm 1.0K-ohm to 1.0meg-ohm RESISTANCE TOLERANCE: +/-20% standard +/-20% standard LINEARITY: through 100K-ohm +/- 5% Independent +/- 5% Independent


    Original     		PDF 100K-ohm) CLAROSTAT 485

    Untitled

    Abstract: No abstract text available
    Text: •           Resonance Search LogMag, g 10.0 1.0 Run 1 17/11/2010 10:57:33 HAR SWEN2A 100.0m 10.0 100.0 Hz 1.0K Resonance Search LogMag, g 10.0 1.0 Run 2 17/11/2010 11:08:06 HAR SWEN2A 100.0m 10.0 100.0 Hz 1.0K Resonance Search


    Original     		PDF 390MPS6D

    Untitled

    Abstract: No abstract text available
    Text: IXGE75N100Z Transistors Independent IGBT Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CES (V)1.0k V(BR)GES (V) I(C) Max. (A)75 Absolute Max. Power Diss. (W)250 Minimum Operating Temp (øC) Maximum Operating Temp (øC) Thermal Resistance Junc-Case


    Original     		PDF IXGE75N100Z

    Untitled

    Abstract: No abstract text available
    Text: IXFH9N100 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)1.0k V(BR)GSS (V) I(D) Max. (A)9.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)250 Minimum Operating Temp (øC)


    Original     		PDF IXFH9N100

    LND150N8 equivalent

    Abstract: depletion n-channel mosfet to-92 LND150 LND150N3 LND150N8 LND150ND MOSFET IGSS 100nA VDS 20V depletion-mode MOSFET
    Text: LND150 N-Channel Depletion-Mode MOSFET Ordering Information Order Number / Package BVDSX / BVDGX RDS ON (max) IDSS (min) TO-92 TO-243AA* Die 500V 1.0KΩ 1.0mA LND150N3 LND150N8 LND150ND * Same as SOT-89. Product shipped on 2000 piece carrier tape reels.


    Original     		PDF LND150 O-243AA* LND150N3 LND150N8 LND150ND OT-89. 100nA LND150N8 equivalent depletion n-channel mosfet to-92 LND150 LND150N3 LND150N8 LND150ND MOSFET IGSS 100nA VDS 20V depletion-mode MOSFET

    Untitled

    Abstract: No abstract text available
    Text: IXTH9N100 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)1.0k V(BR)GSS (V)20 I(D) Max. (A)9.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)250 Minimum Operating Temp (øC)


    Original     		PDF IXTH9N100

    MCSM1W250RFR

    Abstract: tape & reel
    Text: SPC TECHNOLOGY Electrical Specifications Power Rating Maximum Working Watts Voltage @ 70°C 1W 25V Resistance Temperature Coefficient ±100 ppm/°C ± 20 ppm/°C Ohmic Range and Tolerance 0.1%, 0.5%, 1% & 5% 0.01 Ω - 10.0 Ω 1 10.2Ω - 1.0KΩ Power Derating Curve


    Original     		PDF termSM1W200RFR MCSM1W200RFR MCSM1W25R0FR MCSM1W250RFR MCSM1W50R0FR MCSM1W500RFR MCSM1W250RFR tape & reel

    MOSFET IGSS 100nA VDS 20V

    Abstract: N-Channel Depletion-Mode MOSFET depletion n-channel mosfet to-92 N CHANNEL DEPLETION MOSFET N-Channel Depletion-Mode MOSFET high voltage TO-243AA 1000 volt mosfet to-92 depletion 400V power mosfet LND150N3 LND150N8
    Text: LND150 N-Channel Depletion-Mode MOSFET Ordering Information Order Number / Package BVDSX / BVDGX RDS ON (max) IDSS (min) TO-92 TO-243AA* Die 500V 1.0KΩ 1.0mA LND150N3 LND150N8 LND150ND * Same as SOT-89. For carrier tape reels specify P023 for 1,000 units or P024 for 2,000 units.


    Original     		PDF LND150 O-243AA* LND150N3 LND150N8 LND150ND OT-89. 100nA MOSFET IGSS 100nA VDS 20V N-Channel Depletion-Mode MOSFET depletion n-channel mosfet to-92 N CHANNEL DEPLETION MOSFET N-Channel Depletion-Mode MOSFET high voltage TO-243AA 1000 volt mosfet to-92 depletion 400V power mosfet LND150N3 LND150N8

    Untitled

    Abstract: No abstract text available
    Text: BUX348APF Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)500 V(BR)CBO (V)1.0k I(C) Max. (A)35 Absolute Max. Power Diss. (W)250 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10u° @V(CBO) (V) (Test Condition)500 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)15.0


    Original     		PDF BUX348APF

    BSM15GD100D

    Abstract: No abstract text available
    Text: BSM15GD100D Transistors Three-Phase Bridge IGBT Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CES (V)1.0k V(BR)GES (V)20 I(C) Max. (A)15 Absolute Max. Power Diss. (W)125 Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case1.3


    Original     		PDF BSM15GD100D

    Untitled

    Abstract: No abstract text available
    Text: SDF2N100JABVGD1N Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)1.0k V(BR)GSS (V)20 I(D) Max. (A)2.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)8.0 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)-55


    Original     		PDF SDF2N100JABVGD1N

    Untitled

    Abstract: No abstract text available
    Text: STP3N100XI Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)1.0k V(BR)GSS (V)20 I(D) Max. (A)1.6# I(DM) Max. (A) Pulsed I(D)1 @Temp (øC)100# IDM Max (@25øC Amb)6.4 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)30# Minimum Operating Temp (øC)


    Original     		PDF STP3N100XI

    Untitled

    Abstract: No abstract text available
    Text: DTC013Z series Datasheet NPN 100mA 50V Digital Transistors Bias Resistor Built-in Transistors l Outline Parameter VCC Value IC(MAX.) 100mA R1 R2 1.0kΩ 10kΩ VMT3 EMT3F 50V l Features 1) Built-In Biasing Resistors, R1 = 1kΩ, R2 = 10kΩ 2) Built-in bias resistors enable the configuration of


    Original     		PDF DTC013Z 100mA 100mA DTC013ZM DTC013ZEB SC-105AA) SC-89)

    Untitled

    Abstract: No abstract text available
    Text: CLAROSIAT Consumer Potentiometers Series 585 Series 586 500 ohm to 2.0 meg ohm 500 ohm to 2.0 meg ohm 1.OK-ohm to 1.Omeg-ohm 1.0K-ohm to 1.Omeg-ohm RESISTANCE TOLERANCE: +/-20% standard +/-20% standard LINEARITY: through 100K-ohm +/- 5% Independent +/- 5% Independent


    OCR Scan     		PDF 100K-ohm)

    N-Channel Depletion-Mode MOSFET high voltage

    Abstract: No abstract text available
    Text: LND150 inc. N-Channel Depletion-Mode MOSFET Ordering Informâtion Order Number / Package b v dsx/ ^DS ON •d s s BVdcx (max) (min) TO-92 TO-243AA* Die 500V 1.0K£i 1.0mA LND150N3 LND150N8 LND150ND * Sam e as SOT-89 Features Advanced DMOS Technology □ ESD gate protection


    OCR Scan     		PDF LND150 LND150N3 O-243AA* LND150N8 LND150ND OT-89 N-Channel Depletion-Mode MOSFET high voltage

    MOSFET 818 ln

    Abstract: No abstract text available
    Text: LN D 1 E incN-Channel Depletion-Mode MOSFET Ordering Information B Vdsx / Order Number / Package f*DS OH '□(ON) b v dgx (max) (min) TO-92 TO-243AA* Die 500V 1.0K£2 1.0mA LND150N3 LND150N8 LND150ND * Same as SOT-89 Features Advanced DMOS Technology 7! ESD gate protection


    OCR Scan     		PDF LND150N3 O-243AA* LND150N8 LND150ND OT-89 MOSFET 818 ln

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. LND150 N-Channel Depletion-Mode MOSFET Ordering Information Order Number / Package BVDSX / ^DS ON Idss b v dgx (max) (min) TO-92 TO-243AA* Die 500V 1.0K& 1.0mA LND150N3 LND150N8 LND150ND * Sam e as SO T-89. P roduct shipped on 2000 piece c a rrie r tape reels.


    OCR Scan     		PDF LND150 O-243AA* LND150N3 LND150N8 LND150ND