LND150 Search Results

d150n

Contextual Info: LND150 N-Channel Depletion-Mode MOSFET Ordering Information BVdsx/ R d S ON Order Number / Package I dss BVdgx (max) (min) TO-92 TO-243AA* Die 500V 1.0KQ 1.0m A LN D 150N 3 LN D 150N 8 LN D 150N D * Same as SOT-89. For carrier tape reels specify P023 for 1,000 units or P024 for 2,000 units.

N-Channel Depletion-Mode MOSFET high voltage

Abstract: pc 817 A - mosfet gate drive mosfet to-92 n-channel 20 volt
Contextual Info: S u p e r t e x inc. LND150 /jrfÌN N-Channel Depletion-Mode vHg/ MOSFET Ordering Information _ Order Num ber / Package BVdsx/ ^DS ON I dss BV dox (max) (min) TO-92 TO-243AA* Die 500V 1.0KQ 1.0mA LND150N3 LND150N8 LND150ND * Sam e a s SOT-89. Product shipped on 2000 piece carrie r tape reels.

transistor marking code 12W SOT-23

Contextual Info: Supertex inc. LND150 N-Channel Depletion-Mode DMOS FET Features ► ► ► ► ► ► ► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Excellent thermal stability Integral source-drain diode High input impedance and low CISS

LND150

Contextual Info: LND150 Die Specification Pad Layout 2 3 1 0,0 Backside: Source Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 30 30 11 ± 1.5 None 1 (mils) LND150 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Source

Contextual Info: Supertex inc. LND150 N-Channel Depletion-Mode MOSFET Ordering Information Order Number / Package BVDSX / ^DS ON Idss b v dgx (max) (min) TO-92 TO-243AA* Die 500V 1.0K& 1.0mA LND150N3 LND150N8 LND150ND * Sam e as SO T-89. P roduct shipped on 2000 piece c a rrie r tape reels.

Diode IN4006

Abstract: IN757 IN4006 IN4006 diode 120v AC to 12V dc transformer AN-D25 ZENER IN4006 240V A.C. to 9V D.C. converter uc3845n LND150N3
Contextual Info: AN-D25 Application Note Efficient Switchmode Power Supply Start-Up Circuit by Jimes Lei, Applications Engineering Manager Introduction The circuit in Figure 1 shows the Supertex LND150N3 being used to provide the low voltage power supply to be connected to the VCC pin of the Unitrode UC3845N PWM IC. This

transistor marking code 12W SOT-23

Abstract: 12w SOT 23 package marking code marking 12W SOT23 LND150 12w marking code of transistor sot 23 12w sot-23 sot-23 12w 12W MARKING sot23 LN1E Nd150
Contextual Info: LND150 N-Channel Depletion-Mode DMOS FET Features General Description ► ► ► ► ► ► ► The LND150 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown

Diode IN4006

Abstract: IN4006 LND150N3 9v Zener diode LND150N8 equivalent IN757 240V A.C. to 30V D.C. transformer IN4006 diode Step-Up voltage 120VAC to 240 VAC Zener diode with 9v FOR POWER SUPPLY
Contextual Info: LND1 Series Application Note AN-D25 Efficient Switchmode Power Supply Start-Up Circuit by Jimes Lei, Applications Engineerinng Manager Introduction The circuit in Figure 1 shows the Supertex LND150N3 being used to provide the low voltage power supply to be connected to

MC14030

Abstract: 10k trimpot 240v n-channel depletion mosfet DIODE in4005 01UF 10k trimpot resistor in4005 IN4005 diode data sheet Depletion-Mode MOSFET IN4005 diode
Contextual Info: AN-D10 Application Note Off-Line Compact Universal Linear Regulator Introduction the 120VAC input line. D5 does not conduct during normal operation. An off-line compact universal linear regulator is shown in Figure 1. The regulating device is the Supertex LND150N3.

nchannel

Abstract: DN2530 DN2535 DN2540 DN2624 DN2640 LND150 LND250 n-channel
Contextual Info: Chapter 8 – Depletion Mode MOSFETs DN2530 DN2535 DN2540 DN2624 DN2640 LND150 LND250 N-Channel; 300V; 12Ω N-Channel; 350V; 25Ω N-Channel; 400V; 25Ω N-Channel; 240V; 4Ω N-Channel; 400V; 6.0Ω N-Channel; 500V; 1.0KΩ N-Channel; 500V; 1.0KΩ

transistor marking code 12W 12

Abstract: LN1E mosfet marking 12W LND150 LND150N3 LND150N8 LND150ND iGSS 100nA Vgs 0v depletion n-channel mosfet to-92 MOSFET IGSS 100nA VDS 20V
Contextual Info: LND150 N-Channel Depletion-Mode MOSFET Ordering Information Product marking for TO-243AA: Order Number / Package BVDSX / BVDGX RDS ON (max) IDSS (min) TO-92 TO-243AA* Die 500V 1.0KΩ 1.0mA LND150N3 LND150N8 LND150ND LN1E Where = 2-week alpha date code * Same as SOT-89. Product shipped on 2000 piece carrier tape reels.

MOSFET 818 ln

Contextual Info: LN D 1 E incN-Channel Depletion-Mode MOSFET Ordering Information B Vdsx / Order Number / Package f*DS OH '□(ON) b v dgx (max) (min) TO-92 TO-243AA* Die 500V 1.0K£2 1.0mA LND150N3 LND150N8 LND150ND * Same as SOT-89 Features Advanced DMOS Technology 7! ESD gate protection

40822

Contextual Info: LND150 N-Channel Depletion-Mode DMOS FET General Description Features The LND150 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown Low power drive requirement

RH5RA50AA

Abstract: 400V to 6V DC Regulator TO 220 Package IN4005 diode 1N4005 DN2540N5 IN4005 LND150N8 series dc voltage follower regulator 300V regulator RH5RA50
Contextual Info: LND1 Series Application Note AN–D17 High Voltage Off-Line Linear Regulator by Jimes Lei, Applications Engineer Introduction and inexpensive. The high operating voltage and high transient voltage protection are achieved by using Supertex part #LND150N8 in conjunction with a 5.0V linear regulator, Ricoh

Contextual Info: Supertex inc. LND150 N-Channel Depletion-Mode MOSFET Ordering Information Order Number / Package b v dsx/ ^DS ON Idss b v dgx (max) (min) TO-92 TO-243AA* Die 500V 1.0KQ 1.0mA LND150N3 LND150N8 LND150ND * Sam e as SO T-89. P roduct shipped on 2000 piece c a rrie r tape reels.

N-Channel Depletion-Mode MOSFET high voltage

Contextual Info: LND150 inc. N-Channel Depletion-Mode MOSFET Ordering Informâtion Order Number / Package b v dsx/ ^DS ON •d s s BVdcx (max) (min) TO-92 TO-243AA* Die 500V 1.0K£i 1.0mA LND150N3 LND150N8 LND150ND * Sam e as SOT-89 Features Advanced DMOS Technology □ ESD gate protection

LND150

Contextual Info: Supertex inc. LND150 Die Specification Pad Layout 2 3 1 0,0 Backside: Source Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 30 30 11 ± 1.5 None 1 (mils) LND150 1 (mils) Back Side Bonding Pad Material Source Voltage

LN1E

Abstract: Marking code mps
Contextual Info: LND150 N-Channel Depletion-Mode DMOS FET Features General Description ► ► ► ► ► ► ► The LND150 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown

transistor marking code 12W SOT-23

Abstract: 12w SOT 23 package marking code marking 12W SOT23 12w marking code sot 23 LN1E 12w marking code sot23 12W MARKING sot23 12w marking code of transistor sot 23 sot-23 marking 12w 12w sot-23
Contextual Info: LND150 N-Channel Depletion-Mode DMOS FET Features ► ► ► ► ► ► ► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Excellent thermal stability Integral source-drain diode High input impedance and low CISS

LND150N8 equivalent

Abstract: TO-243AA LND150N8
Contextual Info: Package Outline 0.055 0.063 0.173 0.181 0.064 0.072 0.014 0.017 0.155 0.167 0.090 0.102 1 2 0.084 0.090 3 0.035 0.047 0.014 0.019 0.059 BSC 0.118 BSC 0.017 0.022 For LND150N8 only: 1-Gate 2-Drain 3-Source TO-243AA SOT-89:N8 Note: Circle (e.g. B ) indicates JEDEC Reference.

LND150N8 equivalent

Abstract: depletion n-channel mosfet to-92 LND150 LND150N3 LND150N8 LND150ND MOSFET IGSS 100nA VDS 20V depletion-mode MOSFET
Contextual Info: LND150 N-Channel Depletion-Mode MOSFET Ordering Information Order Number / Package BVDSX / BVDGX RDS ON (max) IDSS (min) TO-92 TO-243AA* Die 500V 1.0KΩ 1.0mA LND150N3 LND150N8 LND150ND * Same as SOT-89. Product shipped on 2000 piece carrier tape reels.

MC14030

Abstract: 1K capacitor IN4005 240v n-channel depletion mosfet 240v n-channel mosfet to-92 1k trimpot resistor
Contextual Info: LND1 Series Application Note AN–D10 Off-Line Compact Universal Linear Regulator Introduction An off-line compact universal linear regulator is shown in Figure 1. The regulating device is the Supertex LND150N3. The LND1 is a 500V N-channel depletion mode MOSFET with gate-tosource ESD protection. The regulated voltage, VOUT, is an ideal

Diode IN4006

Abstract: IN4006 Step-Up voltage 120VAC to 240 VAC SMPS 9V power uc3845n IN757 240V A.C. to 30V D.C. transformer 240v ac to 5v dc converter 240V A.C. to 9V D.C. converter IN4006 diode
Contextual Info: LND1 Series Application Note AN-D25 Efficient Switchmode Power Supply Start-Up Circuit by Jimes Lei, Applications Engineerinng Manager Introduction The circuit in Figure 1 shows the Supertex LND150N3 being used to provide the low voltage power supply to be connected to

transistor marking code 12W SOT-23

Abstract: marking 12W SOT23 12w SOT 23 package marking code 12w marking code sot 23 12W MARKING sot23 12w marking code sot23 LN1E LND150k1-G 12w 08 12w marking code of transistor sot 23
Contextual Info: LND150 N-Channel Depletion-Mode DMOS FET Features ► ► ► ► ► ► ► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Excellent thermal stability Integral source-drain diode High input impedance and low CISS