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    10123973-004RLF Amphenol Communications Solutions Universal Contact, 1 Position, 8u\\ Gold. Visit Amphenol Communications Solutions
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    Amphenol Communications Solutions 10123973-004RLF

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    DigiKey 10123973-004RLF Cut Tape 44,386 1
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    Weidmüller Interface GmbH & Co. KG 1123970000

    RELAY GEN PURPOSE DPDT 10A 12V
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    Allied Components International AR12-3978I

    1 x 2 RJ45 connector
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    INTERCONNECT MISC
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    1.2397 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    123970 Brady Worldwide B302 14X10 GRN/BLK/WHT PITCH IN! Original PDF
    12397.1 CONTA-CLIP PCB TERMINAL Original PDF
    123972 Brady Worldwide B401 7X10 WHT/BLU GIRLS Original PDF
    123973 Brady Worldwide B302 7X10 WHT/BLU GIRLS Original PDF
    123974 Brady Worldwide B555 10X14 WHT/BLU GIRLS Original PDF
    12397.4 CONTA-CLIP PCB TERMINAL Original PDF
    123975 Brady Worldwide B401 10X14 WHT/BLU GIRLS Original PDF
    123976 Brady Worldwide B302 10X14 WHT/BLU GIRLS Original PDF
    123977 Brady Worldwide B555 7X10 WHT/BLU BOYS Original PDF
    123978 Brady Worldwide B401 7X10 WHT/BLU BOYS Original PDF
    123979 Brady Worldwide B302 7X10 WHT/BLU BOYS Original PDF

    1.2397 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2f transistor

    Abstract: 1.2397 2F P marking AT1388AF AT1388 AT1388A AT1388F LQFP48 LQFP-48P
    Text: AT1388/AT1388A Preliminary Product Information 6-Channel DC-DC Controller for DSC Features General Description • Low start-up power supply voltage :1.4V CH6 • Wide supply voltage range from 2.5V to 6.5V (CH1~6) • High speed operation is possible: Maximum


    Original     		PDF AT1388/AT1388A AT1388 AT1388A AT1388/AT1388A LQFP48 2f transistor 1.2397 2F P marking AT1388AF AT1388F LQFP48 LQFP-48P

    rsn 3502

    Abstract: rsn 3305 rsn 3404 RSN 3306 CL0116 1803 DFX equivalent transistor TT 3034 TT 2206 datasheet transistor tt 2222 ic sw 2604
    Text: FS7000 SERIES 0.5 m STANDARD CELL 1998 FS73A_B HOLTEK Semiconductor Inc. TABLE OF CONTENTS - INDEX -I. Functional Index of Macrocells ………………………….………… I-1 II. Alphanumeric index of Macrocells …………………………….…… II-1


    Original     		PDF FS7000 rsn 3502 rsn 3305 rsn 3404 RSN 3306 CL0116 1803 DFX equivalent transistor TT 3034 TT 2206 datasheet transistor tt 2222 ic sw 2604

    Untitled

    Abstract: No abstract text available
    Text: DIM1600NSM12-E000 DIM1600NSM12-E000 Single Switch IGBT Module PDS5756-1.0 April 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses KEY PARAMETERS VCES typ VCE(sat) * (max) IC (max) IC(PK) ■ 10µs Short Circuit Withstand


    Original     		PDF DIM1600NSM12-E000 PDS5756-1

    LM2595J-ADJ-QML

    Abstract: 143715 74594
    Text: Military/Aerospace Analog Engineering N TOTAL DOSE RADIATION TEST I. INTRODUCTION Total dose radiation tests are designed to characterize changes in device performance due to total dose radiation. These tests are not intended to classify maximum radiation


    Original     		PDF MIL-STD-883 LM2595J-ADJ-QML 143715 74594

    1.2397

    Abstract: DIM400BSS12-E000
    Text: DIM400BSS12-E000 DIM400BSS12-E000 Single Switch IGBT Module PDS5705-1.2 January 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand KEY PARAMETERS VCES typ VCE(sat) (max)


    Original     		PDF DIM400BSS12-E000 PDS5705-1 DIM400BSS12-E000 1.2397

    IGBT inverter wind turbine

    Abstract: DIM800DDM12-E000 43054
    Text: DIM800DDM12-E000 DIM800DDM12-E000 Dual Switch IGBT Module PDS5749-1.2 April 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses KEY PARAMETERS VCES typ VCE(sat) * (max) IC (max) IC(PK) ■ 10µs Short Circuit Withstand


    Original     		PDF DIM800DDM12-E000 PDS5749-1 IGBT inverter wind turbine DIM800DDM12-E000 43054

    Untitled

    Abstract: No abstract text available
    Text: DIM200BSS12-E000 DIM200BSS12-E000 Single Switch IGBT Module PDS5704-1.1 January 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand KEY PARAMETERS VCES typ VCE(sat) (max)


    Original     		PDF DIM200BSS12-E000 PDS5704-1 DIM200BSS12-E000

    Untitled

    Abstract: No abstract text available
    Text: DIM50CHS12-E000 DIM50CHS12-E000 Half Bridge IGBT Module PDS5712-1.2 January 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand KEY PARAMETERS VCES typ VCE(sat) (max) IC


    Original     		PDF DIM50CHS12-E000 PDS5712-1 DIM50CHS12-E000

    Untitled

    Abstract: No abstract text available
    Text: DIM100CHS12-E000 DIM100CHS12-E000 Half Bridge IGBT Module PDS5682-1.2 January 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand KEY PARAMETERS VCES typ VCE(sat) (max)


    Original     		PDF DIM100CHS12-E000 PDS5682-1 DIM100CHS12-E000

    1.2397

    Abstract: bi-directional switches IGBT DIM600BSS12-E000 IGBT full bridge 1200
    Text: DIM600BSS12-E000 DIM600BSS12-E000 Single Switch IGBT Module Replaces issue September 2003, version PDS5651-2.0 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand PDS5702-1.2 January 2004


    Original     		PDF DIM600BSS12-E000 PDS5651-2 PDS5702-1 DIM600BSS12-E000 1.2397 bi-directional switches IGBT IGBT full bridge 1200

    Untitled

    Abstract: No abstract text available
    Text: DIM100WHS12-E000 DIM100WHS12-E000 Half Bridge IGBT Module PDS5710-1.1 January 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand KEY PARAMETERS VCES typ VCE(sat) (max)


    Original     		PDF DIM100WHS12-E000 PDS5710-1 DIM100WHS12-E000

    Untitled

    Abstract: No abstract text available
    Text: DIM200BSS12-E000 DIM200BSS12-E000 Single Switch IGBT Module PDS5704-1.1 January 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand KEY PARAMETERS VCES typ VCE(sat) (max)


    Original     		PDF DIM200BSS12-E000 PDS5704-1 DIM200BSS12-E000

    Untitled

    Abstract: No abstract text available
    Text: DIM600BSS12-E000 DIM600BSS12-E000 Single Switch IGBT Module Replaces issue September 2003, version PDS5651-2.0 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand PDS5702-1.2 January 2004


    Original     		PDF DIM600BSS12-E000 PDS5651-2 PDS5702-1 DIM600BSS12-E000

    Untitled

    Abstract: No abstract text available
    Text: DIM600BSS12-E000 DIM600BSS12-E000 Single Switch IGBT Module Replaces issue September 2003, version PDS5651-2.0 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand PDS5702-1.2 January 2004


    Original     		PDF DIM600BSS12-E000 PDS5651-2 PDS5702-1 DIM600BSS12-E000

    DIM1600NSM12-E000

    Abstract: No abstract text available
    Text: DIM1600NSM12-E000 DIM1600NSM12-E000 Single Switch IGBT Module Replaces April 2004 version, issue PDS5756-1.0 FEATURES PDS5756-2.0 June 2004 • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses KEY PARAMETERS VCES typ VCE(sat) *


    Original     		PDF DIM1600NSM12-E000 PDS5756-1 PDS5756-2 DIM1600NSM12-E000

    Untitled

    Abstract: No abstract text available
    Text: DIM100CHS12-E000 DIM100CHS12-E000 Half Bridge IGBT Module PDS5682-1.2 January 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand KEY PARAMETERS VCES typ VCE(sat) (max)


    Original     		PDF DIM100CHS12-E000 PDS5682-1 DIM100CHS12-E000

    Untitled

    Abstract: No abstract text available
    Text: DIM50CHS12-E000 DIM50CHS12-E000 Half Bridge IGBT Module PDS5712-1.2 January 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand KEY PARAMETERS VCES typ VCE(sat) (max) IC


    Original     		PDF DIM50CHS12-E000 PDS5712-1 DIM50CHS12-E000

    Untitled

    Abstract: No abstract text available
    Text: DIM200WHS12-E000 DIM200WHS12-E000 Half Bridge IGBT Module PDS5684-1.2 January 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand KEY PARAMETERS VCES typ VCE(sat) (max)


    Original     		PDF DIM200WHS12-E000 PDS5684-1 DIM200WHS12-E000

    DIM200WHS12-E000

    Abstract: No abstract text available
    Text: DIM200WHS12-E000 DIM200WHS12-E000 Half Bridge IGBT Module PDS5684-1.2 January 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand KEY PARAMETERS VCES typ VCE(sat) (max)


    Original     		PDF DIM200WHS12-E000 PDS5684-1 DIM200WHS12-E000

    1.2397

    Abstract: DIM400WHS12-E000 4800A
    Text: DIM400WHS12-E000 DIM400WHS12-E000 Half Bridge IGBT Module PDS5664-1.2 January 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand KEY PARAMETERS VCES typ VCE(sat) (max)


    Original     		PDF DIM400WHS12-E000 PDS5664-1 DIM400WHS12-E000 1.2397 4800A

    Untitled

    Abstract: No abstract text available
    Text: DIM400WHS12-E000 DIM400WHS12-E000 Half Bridge IGBT Module PDS5664-1.2 January 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand KEY PARAMETERS VCES typ VCE(sat) (max)


    Original     		PDF DIM400WHS12-E000 PDS5664-1 DIM400WHS12-E000

    Untitled

    Abstract: No abstract text available
    Text: DIM300WHS12-E000 DIM300WHS12-E000 Half Bridge IGBT Module PDS5685-1.2 January 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand KEY PARAMETERS VCES typ VCE(sat) (max)


    Original     		PDF DIM300WHS12-E000 PDS5685-1 DIM300WHS12-E000

    1.2397

    Abstract: No abstract text available
    Text: DIM400BSS12-E000 DIM400BSS12-E000 Single Switch IGBT Module PDS5705-1.2 January 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand KEY PARAMETERS VCES typ VCE(sat) (max)


    Original     		PDF DIM400BSS12-E000 PDS5705-1 DIM400BSS12-E000 sa0518 1.2397

    DIM100WHS12-E000

    Abstract: DYNEx PDS5710-1
    Text: DIM100WHS12-E000 DIM100WHS12-E000 Half Bridge IGBT Module PDS5710-1.1 January 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand KEY PARAMETERS VCES typ VCE(sat) (max)


    Original     		PDF DIM100WHS12-E000 PDS5710-1 DIM100WHS12-E000 DYNEx