10 20E DIODE Search Results

Si4114DY

Abstract: Si4114DY-T1-E3 Si4114DY-T1-GE3
Contextual Info: New Product Si4114DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A)a 0.006 at VGS = 10 V 20e 0.007 at VGS = 4.5 V 20e • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: New Product Si4114DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A)a 0.006 at VGS = 10 V 20e 0.007 at VGS = 4.5 V 20e • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: New Product Si4114DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A)a 0.006 at VGS = 10 V 20e 0.007 at VGS = 4.5 V 20e • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Si4114DY

Abstract: Si4114DY-T1-E3 Si4114DY-T1-GE3
Contextual Info: New Product Si4114DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A)a 0.006 at VGS = 10 V 20e 0.007 at VGS = 4.5 V 20e • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: New Product Si4114DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A)a 0.006 at VGS = 10 V 20e 0.007 at VGS = 4.5 V 20e • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: New Product Si4114DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A)a 0.006 at VGS = 10 V 20e 0.007 at VGS = 4.5 V 20e • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

5082-2815

Contextual Info: HEWLETT-PACKARD. CUPNTS HEWLETT PACKARD 20E D B 44475fi4 OOQSt.37 SCHOTTKY BARRIER DIODES FOR GENERAL PURPOSE APPLICATIONS Features 0.41 D a 1N5711 1N5712 5082-2800/10/11/35 5082-2301 5082-2302 5082-2303 5082-2900 .016 0.36 (>014) LOW TURN-ON VOLTAGE: AS LOW AS

5082-2815

Abstract: 5082-2970 5082-2805 5082-2813 5082-2308 5082-2804 diode+hp+2835+schottky 5082-2826 5082-2997 5082-2912
Contextual Info: HEWLETT-PACKARD i CMPNTS HEWLETT PACKARD 20E D E3 4 447584 OOOSfc.37 0 SCHOTTKY BARRIER DIODES FOR GENERAL PURPOSE APPLICATIONS Features 1N5711 1N5712 5082-2800/10/11/35 5082-2301 5082-2302 5082-2303 5082-2900 0,41 .016 0.36 (>014) LOW TURN-ON VOLTAGE: AS LOW AS

SILICON POWER CUBE

Abstract: "Silicon Power Cube" silicon power cube m50 600R M25E M5060 M2535SB POWER CUBE SBR 400V m25 diode
Contextual Info: SILICON POWER CUBE CORP 20E D • OQOQSQfl =1 f l E 5 3 e1Qa SILICON POWER CUBE rvT iïim m M 2 5 /M 5 0 SERIES 3 5A -100A POWER DIODE CIRCUITS FEATURES PARAMETER DC Output Current, 10 Max. DC Output Current, 30 (Max.) One-Cycle Surge Current (Peak) l2t for Fusing (Max.)

Contextual Info: New Product Si4114DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.006 at VGS = 10 V 20e 0.007 at VGS = 4.5 V e VDS (V) 20 20 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.) RoHS 27.5 nC APPLICATIONS

25CC

Abstract: P4C163 P4C163L
Contextual Info: PERFORMANCE SEMI CONDUCTOR 20E D • 7 0 b 2 5 e! 7 00005b3 P4C163/P4C163L ULTRA HIGH SPEED 8K x 9 STATIC CMOS RAMS SCRAMS T 3 ^ - a ■ s - i a FEATURES Single 5V±10% Power Supply Data Retention with 2.0V Supply, 10 |iA Typical Current Common I/O Full CMOS, 6T Cell

Si4114DY

Abstract: Si4114DY-T1-E3
Contextual Info: New Product Si4114DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.006 at VGS = 10 V 20e 0.007 at VGS = 4.5 V e VDS (V) 20 20 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.) RoHS 27.5 nC APPLICATIONS

LT1231

Abstract: LT1280CS LT1280CN LT12811 LT1281 LT1130 LT1180 LT1181 LT1280 LT1281CS
Contextual Info: LINEAR r TECHNOLOGY j CORP u n xm TECHNOLOGY 20E D • S51fl4bfl T" l e ^ G - ö S 00040^ b ■ LT1280/LT1281 A d v a n ce d Low Power 5V RS232 Dual Driver/Receiver F6 A T U R C S D C S C R IP T IO A ■ 10 m A M ax Supply Current The LT1280 and L.T1281 are the only dual RS232 driver/

62YL

Abstract: qs3125
Contextual Info: QuickSwitch Products QS3125 High-Speed CMOS Quadruple Bus Switches With Individual Active Low Enables O i lo r li Quality Semiconductor, I nc. FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to Vcc • Pin compatible with the 74'125 function

VH125

Abstract: QS3VH125
Contextual Info: m QuickSwitch Products I m c t o r Inc qs 3v h i 25 3.3V Quad Active Low Switch ,or Hot S w aP Applications HotSwitch™ advance in f o r m a t io n FEATURES/BENEFITS DESCRIPTION • N channel FET switches with no parasitic diode to Vcc - No DC path to Vcc or GND

DIODE C06 15

Abstract: c05 10 48 diode HSCH-0812 sch08 10 20e diode 20E diode DIODE C06
Contextual Info: HEWLETT-PACKARD i C MP N T S 20E D 4447504 OOOSL. ÛE HIGH RELIABILITY ZERO BIAS SCHOTTKY DETECTOR DIODE HEW LETT PACKARD S □ HSCH-0812 Generic HSCH-3486 Features H IG H T A N G E N T IA L S E N S IT IV IT Y N O B IA S R E Q U IR E D H E R M E T IC G L A S S P A C K A G E

Contextual Info: QuickSwitch Products GB S e m ic o n d u c t o r , I n c . QS3125 High-Speed CMOS Quadruple pus Switches With Individual Active Low Enables FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to Vcc • Pin compatible with the 74'125 function

Contextual Info: HEWLETT-PACKARDn CMPNTS 2GE D B 4447SÔ4 QDQS?2b BEAM LEAD PIN DIODE fZ Z J l H E W L E T T X '& J P A C K A R D T Q HPND-4005 HPND-4005TXV T " " 0'I'-1s~ Features HIGH BREAKDOWN VOLTAGE 120V Typical LOW CAPACITANCE 0.017 pF Typical LOW RESISTANCE 4.70 Typical

TTL 74126

Contextual Info: QuickSwitch Products Quality S e m ic o n d u c t o r , I n c . qs 3126 High-Speed CMOS Quadruple Bus Switches With Individual Active High Enables fti lo rli FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to Vcc • Bidirectional switches connect inputs to outputs

Contextual Info: QuickSwitch Products & q s 3v h i 25 3.3V Quad Active Low Switch f° r Hot Swap Applications HotSwitch U C T O * I nc FEATURES/BENEFITS DESCRIPTION • N channel FET switches with no parasitic diode to Vcc - No DC path to Vcc or GND - 5V tolerant in OFF state

vh125

Contextual Info: QuickSwitch Products q s 3v h i 25 3 .3 V Quad Active Lo w Switch for Hot Sw ap Applications HotSw itch Si'w 'o' iiiitoii i\c FEATURES/BENEFITS DESCRIPTION • N channel FET switches with no parasitic diode to Vcc - No DC path to Vcc or GND - 5V tolerant in OFF state

Contextual Info: QuickSwitch Products SemZ qs3v h i 25 3.3V Quad Active Low Switch for Hot Swap Applications HotSwitch ductor I nc advance in f o r m a t io n FEATURES/BENEFITS DESCRIPTION • N channel FET switches with no parasitic diode to Vcc - No DC path to Vcc or GND

Contextual Info: Technical Data CD54/74AC240/241/244 CD54/74ACT240/241/244 Advance Information Tex a s In s t r u m e n t s Data sheet acquired from Harris S em iconductor SC HS287 241 t 2 4 4 2 4 0 tA O _J 18 4 16 a 14 1A1 1A2 1 A3 2A 0 2A1 2 A3 2A 3 240 & 244 12 it 9 13

74ACT244 HARRIS

Abstract: 74ACT244 harris semiconductor
Contextual Info: Technical D a t a _ CD54/74AC240/241 /244 CD54/74ACT240/241 /244 241 A 244 240 18 1 YO 1 YO 16 1Y1 1Y1 14 1 AO 1A1 1A2 1Y2 TŸ2 12 1A3 9 2YO 2Ÿ0 7_ 2Y1 2Ÿ1 5 2Y2 2Ÿ2 2A0 2A1 2A2 3 2 A3 240 & 244 1Y3 Ο3 241 Type Features: • B uffered inputs