1N5712 Search Results

N5711* diode Die

Abstract: 1N5712 1N5711 DIE n5711 1N5711 CD2810 CD5711 CD5712 DSB5712
Contextual Info: • 1N5711 AVAILABLE IN JANC • 1N5712 AVAILABLE IN JANC • SCHOTTKY BARRIER DIODE CHIPS FOR GENERAL PURPOSE APPLICATION • SILICON DIOXIDE PASSIVATED CD5711 and CD5712 and CD2810 • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES MAXIMUM RATINGS

JANTX, JX, JAN, Schottky

Abstract: 1N5711UR-1 SCHOTTKY DIODE SOD-80 JANTX
Contextual Info: • 1N5711UR-1 AVAILABLE IN JAN, JANTX, JANTXV and JANS PER MIL-PRF-19500/444 • 1N5712UR-1 AVAILABLE IN JAN, JANTX, JANTXV and JANS PER MIL-PRF 19500/445 • SCHOTTKY BARRIER DIODES • LEADLESS PACKAGE FOR SURFACE MOUNT • METALLURGICALLY BONDED, DOUBLE PLUG CONSTRUCTION

5082-2815

Abstract: 5082-2970 HSCH-1001 diode hp 2835 schottky 5082-2370 5082-2997 diode hp 2811 HSCH-1001 5082-2800 5082-2813 5082-2805
Contextual Info: ^5ñ d ÉT| 4 4 4 7 £ ú 4 DDGaf l 31 3 4 4 4 7 5 8 ^ H E WL E T T - P A C K A R D » m 5 8C CMPNTS HEWLETT PACKARD 02831 SCHOTTKY BARRIER DIODES FOR GENERAL PURPOSE APPLICATIONS d T-07 -*7 1N5711* 1N5712* 5082-2301 5082-2302 5082-2303 5082-2305 5082-2800/10/11/35*

5082-2815

Contextual Info: HEWLETT-PACKARD. CUPNTS HEWLETT PACKARD 20E D B 44475fi4 OOQSt.37 SCHOTTKY BARRIER DIODES FOR GENERAL PURPOSE APPLICATIONS Features 0.41 D a 1N5711 1N5712 5082-2800/10/11/35 5082-2301 5082-2302 5082-2303 5082-2900 .016 0.36 (>014) LOW TURN-ON VOLTAGE: AS LOW AS

1N5712 spice

Abstract: 1N5711 spice 1N5712 1N5711 5082-2804 2800-Series 5082-2811 RS-296-D
Contextual Info: Products > RF ICs/Discretes > Schottky Diodes > Axial Glass Packaged > 1N5711 1N5711 Low 1/f noise general purpose Schottky diode Description Lifecycle status: Active Features The 1N5711 and 1N5712 are passivated Schottky barrier diodes which use a patented

5082-2815

Abstract: 5082-2970 5082-2805 5082-2813 5082-2308 5082-2804 diode+hp+2835+schottky 5082-2826 5082-2997 5082-2912
Contextual Info: HEWLETT-PACKARD i CMPNTS HEWLETT PACKARD 20E D E3 4 447584 OOOSfc.37 0 SCHOTTKY BARRIER DIODES FOR GENERAL PURPOSE APPLICATIONS Features 1N5711 1N5712 5082-2800/10/11/35 5082-2301 5082-2302 5082-2303 5082-2900 0,41 .016 0.36 (>014) LOW TURN-ON VOLTAGE: AS LOW AS

Contextual Info: 1N5711UR-1 1N5712UR-1 CDLL5711 CDLL5712 CDLL2810 CDLL6263 • 1N5711UR-1 AVAILABLE IN JAN, JANTX AND JANTXV • 1N5712UR-1 AVAILABLE IN JAN, JANTX AND JANTXV • SCHOTTKY BARRIER DIODES • LEADLESS PACKAGE FOR SURFACE MOUNT • METALLURGICALLY BONDED, DOUBLE PLUG CONSTRUCTION -1

Contextual Info: 1N5712+JANTX Diodes General Purpose Schottky Rectifier Military/High-RelY I O Max.(A) Output Current33m @Temp (øC) (Test Condition)25 V(RRM)(V) Rep.Pk.Rev. Voltage20 I(FSM) Max.(A) Pk.Fwd.Sur.Cur. V(FM) Max.(V) Forward Voltage550m @I(FM) (A) (Test Condition)1m

1n5711 die

Abstract: MIL-PRF-19500-444 microsemi 1n5712 1N5711 1N5712 CD2810 CD5711 CD5712 CD6857 CD6858
Contextual Info: • 1N5711 AVAILABLE IN JANHC AND JANKC PER MIL-PRF-19500/444 CD2810 CD5711 CD5712 CD6857 CD6858 CD6916 • 1N5712 AVAILABLE IN JANHC AND JANKC PER MIL-PRF-19500/445 • SCHOTTKY BARRIER DIODE CHIPS FOR GENERAL PURPOSE APPLICATION • SILICON DIOXIDE PASSIVATED

diode t25 13 Go

Abstract: 1N5712 DIODE T25 1N5712 spice DIODE T25 4 1N5711 spice 1n5711 5082-XXXX 1n5711 equivalent AVAGO 5082-2811
Contextual Info: 1N5711, 1N5712, 5082-2800 Series Schottky Barrier Diodes for General Purpose Applications Data Sheet Description/Applications Features The 1N5711, 1N5712, 5082-2800/10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high break­down voltage. Packaged in

1N5711

Abstract: 1N5712 ODS-54
Contextual Info: 1N5711, 1N5712 MADS-005711-0054MT, MADS-005712-0054MT General Purpose Axial Lead Glass Packaged Schottky Diodes M/A-COM Products Rev. V2 Features • • • • • Glass Package Style Low Reverse Leakage Current Low Forward Voltage Drop Pico second Switching Speed

Contextual Info: 1N5712UR1+JANTXV Diodes General Purpose Schottky Rectifier Military/High-RelY I O Max.(A) Output Current33m @Temp (øC) (Test Condition)25 V(RRM)(V) Rep.Pk.Rev. Voltage20 I(FSM) Max.(A) Pk.Fwd.Sur.Cur. V(FM) Max.(V) Forward Voltage550m @I(FM) (A) (Test Condition)1m

Contextual Info: 1N5712-1+JANTXV Diodes General Purpose Schottky Rectifier Military/High-RelY I O Max.(A) Output Current33m @Temp (øC) (Test Condition)25 V(RRM)(V) Rep.Pk.Rev. Voltage20 I(FSM) Max.(A) Pk.Fwd.Sur.Cur. V(FM) Max.(V) Forward Voltage550m @I(FM) (A) (Test Condition)1m

jantx diodes

Abstract: 1N5711 JANTX
Contextual Info: 1N5711 and 1N5711-1 • 1N5711 AVAILABLE IN JAN, JANTX AND JANTXV • 1N5711-1 AVAILABLE IN JAN, JANTX AND JANTXV and • 1N5712-1 AVAILABLE IN JAN, JANTX AND JANTXV 1N5712-1 • SCHOTTKY BARRIER DIODES and • HERMETICALLY SEALED DSB5712 and DSB2810 • METALLURGICALLY BONDED -1

IAM-81008

Abstract: 5082-2830 HSMP-3895 5082-3043 ina-02170 INA-01170 30533 5082-0012 5082-2970 HSMP 2800
Contextual Info: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101

C68001

Abstract: 1N5712 1N5712 JANTX CI 4011 N5712 JANTXV1N5712 1N5712 JANTXV C-68001
Contextual Info: SCHOTTKY SWITCHING DIODE MILITARY APPROVED M IL-S -19500/445 H E W L E T T ^ PA CK ARD COMPONENTS JAN 1N5712 JANTX mm m m 15712 Features LOW TURN-ON VOLTAGE Description /Applications Maximum Ratings at T he J A N S e rie s 1 N 5 7 1 2 is an e p ita x ia l, p la n a r p a s s iv a te d

MIL-PRF-19500-444

Abstract: JANTX, JX, JAN, Schottky 1n5711 equivalent 1N5711-1 DSB5712 DSB2810 1N5711 1N5712 1N5712-1 1N6857-1
Contextual Info: • 1N5711-1 AVAILABLE IN JAN, PER MIL-PRF-19500/444 • 1N5712-1 AVAILABLE IN JAN, PER MIL-PRF-19500/444 • SCHOTTKY BARRIER DIODES • HERMETICALLY SEALED • METALLURGICALLY BONDED 1N5711 1N5711-1 1N5712-1 1N6857-1 1N6858-1 DSB2810 DSB5712 JANTX, JANTXV AND JANS

Contextual Info: DIGITRON SEMICONDUCTORS 1N5711, 1N5712 & 1N6263 • • SCHOTTKY DIODES For general purpose applications Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices.

ODS-54

Contextual Info: 1N5711, 1N5712 MADS-005711-0054MT, MADS-005712-0054MT General Purpose Axial Lead Glass Packaged Schottky Diodes M/A-COM Products Rev. V2 Features • • • • • Glass Package Style Low Reverse Leakage Current Low Forward Voltage Drop Pico second Switching Speed

1N5712

Contextual Info: BL GALAXY ELECTRICAL 1N5712 VOLTAGE RANGE: 20 V POWER DISSIPATION: 430 mW SMALL SIGNAL SCHOTTKY DIODES FEATURES Metal-to-silicon junction DO - 35 GLASS High breakdown voltage Low turn-on voltage Ultrafast switching speed Prmarly intended for high level UHF/VHF detection

1N5711, 5082-2800

Contextual Info: 1N5711, 5082-2800 1N5712, 5082-2810/11 5082-2835 Avago Technologies Glass Package RF Schottky Diodes Reliability Data Sheet Description The following cumulative test results have been obtained from testing performed at Avago Technologies. For the purpose of this reliability data sheet, a failure is

cd2810

Abstract: 1N5711 DIE
Contextual Info: • 1N5711 AVAILABLE IN JANC • 1N5712 AVAILABLE IN JANC • SCHOTTKY BARRIER DIODE CHIPS FOR GENERAL PURPOSE APPLICATION • SILICON DIOXIDE PASSIVATED CD5711 and CD5712 and CD2810 • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES MAXIMUM RATINGS

MIL-PRF-19500

Abstract: MIL-PRF-19500-444 1N5712 1N5712 JANTX 1N5712-1 1N5712UR-1
Contextual Info: INCH-POUND NOTICE OF CANCELLATION MIL-PRF-19500/445D NOTICE 2 15 February 2006 SUPERSEDING MIL-PRF-19500/445D NOTICE 1 8 March 2002 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING, TYPES 1N5712, 1N5712-1, AND 1N5712UR-1, JAN, JANTX, JANTXV, JANJ, JANS, JANHC, AND JANKC

Contextual Info: 1N5712-1+JANTX Diodes General Purpose Schottky Rectifier Military/High-RelY I O Max.(A) Output Current33m @Temp (øC) (Test Condition)25 V(RRM)(V) Rep.Pk.Rev. Voltage20 I(FSM) Max.(A) Pk.Fwd.Sur.Cur. V(FM) Max.(V) Forward Voltage550m @I(FM) (A) (Test Condition)1m