10 K 300 Search Results

DSTV-K-10

Contextual Info: Screw connection Group size 4 Screw connection DSTV-K-10 Screw connection DSTV-HD 24 10-pole 380V~/450V-/max.16A 24-pole Dimensions Version Male Male Female Female Dimensions Type Cat. No. DSTV-K-SR 10 DSTV-K-SL 10 DSTV-K-BR 10 DSTV-K-BL 10 1290600000 1409000000

UNR1110

Abstract: UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119
Contextual Info: Transistors with built-in Resistor UNR111x Series UN111x Series Silicon PNP epitaxial planar transistor Unit: mm For digital circuits 2.5±0.1 (1.0) R 0.9 R 0.7 0.55±0.1 (R1) 47 kΩ 10 kΩ 22 kΩ 47 kΩ 10 kΩ 10 kΩ 4.7 kΩ 22 kΩ 0.51 kΩ 1 kΩ

Contextual Info: 8700 Series 10 MHz Voltage to Frequency Converters Models 8710 BLOCK DIAGRAM OFFSET 10 M 10 K v REF 10 K 10 K INTEGRATOR R 10 K v IN A1 A2 Iav SCHMITT + v S TRIGGER One-Shot F/ F 2.2 K I IN Q Dispenser Q=CV 820Ω +v REF FOUT Features: Description Guaranteed Minimum /

UNR1210

Abstract: UNR1211 UNR1212 UNR1213 UNR1214 UNR1215 UNR1216 UNR1217 UNR1218 UNR1219
Contextual Info: Transistors with built-in Resistor UNR121x Series UN121x Series Silicon NPN epitaxial planar type Unit: mm For digital circuits 2.5±0.1 (1.0) R 0.9 R 0.7 0.55±0.1 (R1) 47 kΩ 10 kΩ 22 kΩ 47 kΩ 10 kΩ 10 kΩ 4.7 kΩ 22 kΩ 0.51 kΩ 1 kΩ 47 kΩ

PEMB11

Abstract: PEMB1
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMB11 PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ Preliminary specification 2001 Sep 13 Philips Semiconductors Preliminary specification PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ

PEMH11

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMH11 NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ Preliminary specification 2001 Oct 22 Philips Semiconductors Preliminary specification NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ

Thermistor K153

Abstract: k683 K470 thermistor K224 k682 K164 K2600
Contextual Info: Scheiben Disks Maßbild Typ Outline drawing Type Nenn­ Toleranz ß-Wert widerstand Rated Tolerance B value resistance ^25 Af?25 Q K164 m 10 15 : 5%, : 10 %, 22 : 20 % 68 5,5max 100 150 220 330 470 680 1k 1.5 k 2.2 k 3.3 k 4.7 k 6.8 k 10 k 15 k 22 k 33 k 47 k

marking code D3

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMD3 NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ Preliminary specification 2001 Sep 13 Philips Semiconductors Preliminary specification NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ

UNR1210

Abstract: UNR1211 UNR1212 UNR1213 UNR1214 UNR1215 UNR1216 UNR1217 UNR1218 UNR1219
Contextual Info: Transistors with built-in Resistor UNR121x Series UN121x Series Silicon NPN epitaxial planar type Unit: mm For digital circuits (1.0) 4.1±0.2 2.0±0.2 2.4±0.2 (0.85) 0.45±0.05 0.55±0.1 (R1) 47 kΩ 10 kΩ 22 kΩ 47 kΩ 10 kΩ 10 kΩ 4.7 kΩ 22 kΩ

common collector PNP

Abstract: UNR1110 UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118
Contextual Info: Transistors with built-in Resistor UNR111x Series UN111x Series Silicon PNP epitaxial planar transistor Unit: mm For digital circuits (1.0) 4.1±0.2 2.0±0.2 2.4±0.2 (0.85) 0.45±0.05 0.55±0.1 (R1) 47 kΩ 10 kΩ 22 kΩ 47 kΩ 10 kΩ 10 kΩ 4.7 kΩ

PEMB11

Abstract: PEMH11 PUMB11 PUMH11 PEMB1
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PEMB11; PUMB11 PNP/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ Product data sheet Supersedes data of 2001 Sep 13 2003 Oct 03 NXP Semiconductors Product data sheet PNP/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ

PEMB11

Abstract: PEMH11 PUMB11 PUMH11 PEMB1
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PEMH11; PUMH11 NPN/NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ Product data sheet Supersedes data of 2001 Oct 22 2003 Oct 20 NXP Semiconductors Product data sheet NPN/NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ

NLC1812

Contextual Info: Tol Q Min. H % SRF (*MHz) Min. RDC IDC MAX IN (MHz) (  ) K 10 200 (mA) NLC1812T-1R0 1.0 @7.96MHz 0.11 1050 NLC1812T-1R2 1.2 @7.96MHz K 10 160 0.12 1000 NLC1812T-1R5 1.5 @7.96MHz K 10 130 0.15 950 NLC1812T-1R8 1.8 @7.96MHz K 10 100 0.16 900 NLC1812T-2R2

3SK73

Abstract: 3SK73Y 3SK101 3SK73 gr SC1815 2SK241GR 3SK73-Y 3SK101-Y 2SC2669 2SK241-GR
Contextual Info: [8] [ 8 ] 応用回路例 1 kΩ T6 S3 1 L5 T8 3 1.2 kΩ F 1 kΩ 0.01 µF 47 kΩ 0.01 µF 1.5 kΩ 4 x 20 BET T7 390 Ω L7 0.04 µF 10 kΩ 1 kΩ 0.01 µF 10 µF/6 WV 6 WV 10 kΩ 2 1.2 kΩ 3.3 kΩ 330 Ω 50 µF/6 WV 0.005 µF −200 µF +6 WV 6 V

k3797

Abstract: NTC SOD-27 ntc 3977 c633
Contextual Info: NTC Thermistors for sensing of high temperatures Series 2322 . . 633 8. bulk , 633 3. (ammopack) Type of leads tinned Resistance at 25 °C 10 kΩ 20 kΩ 30 kΩ 100 kΩ 220 kΩ Tolerance on R-value ± 5%, ± 10% B-value B25/85 3977 K, 3797 K

UN9117J

Abstract: UN9110J UN9111J UN9112J UN9113J UNR9110J UNR9111J UNR9112J UNR9113J UNR9114J
Contextual Info: Transistors with built-in Resistor UNR91XXJ Series UN91XXJ Series Silicon PNP epitaxial planer type For digital circuit 1.00±0.05 Unit: mm 0.80±0.05 1.60+0.05 –0.03 0.12+0.03 –0.01 (R2)  10 kΩ 22 kΩ 47 kΩ 47 kΩ    5.1 kΩ 10 kΩ

Contextual Info: Speciality Polymer Aluminum Electrolytic Capacitors Typical Data Surface Mount Type_ Application Guidelines Frequency Characteristics 100 300 3K 6K 10*. 30 K 60 K 100 K 300 K 6 0 0 K IM 3W 6M 10M 3CM Frequency Hzi 1. Circuit Design

transistor marking D9

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMD9 NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ Preliminary specification 2001 Oct 22 Philips Semiconductors Preliminary specification NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ

PUMB18

Abstract: PUMH18
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET MBD128 PUMH18 NPN/NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ Product specification 2003 Oct 16 Philips Semiconductors Product specification NPN/NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ

UN9110J

Abstract: UN9111J UN9112J UN9113J UN9114J UNR9110J UNR9111J UNR9112J UNR9113J UNR9114J
Contextual Info: Transistors with built-in Resistor UNR911xJ Series UN911xJ Series Silicon PNP epitaxial planar type 1.00±0.05 Unit: mm 0.80±0.05 1.60+0.05 –0.03 For digital circuits 0.12+0.03 –0.01 (R2)  10 kΩ 22 kΩ 47 kΩ 47 kΩ    5.1 kΩ 10 kΩ

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMB9 PNP resistor-equipped transistors R1 = 10 kΩ, R2 = 47 kΩ Product specification 2003 Jan 07 Philips Semiconductors Product specification PNP resistor-equipped transistors R1 = 10 kΩ, R2 = 47 kΩ PEMB9 FEATURES

PUMB18

Abstract: PUMH18
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET fpage MBD128 PUMB18 PNP/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ Product specification 2003 Oct 03 Philips Semiconductors Product specification PNP/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ

transistor h9

Abstract: PIMH9
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D302 PIMH9 NPN resistor-equipped double transistor; R1 = 10 kΩ, R2 = 47 kΩ Product specification 2001 Sep 13 Philips Semiconductors Product specification NPN resistor-equipped double transistor; R1 = 10 kΩ, R2 = 47 kΩ

transistor number code book FREE

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 PUMB9 PNP resistor-equipped double transistor; R1 = 10 kΩ, R2 = 47 kΩ Objective specification 2003 Feb 03 Philips Semiconductors Objective specification PNP resistor-equipped double transistor; R1 = 10 kΩ, R2 = 47 kΩ