10 M 20A Search Results

Contextual Info: ZL50418 Managed 16-Port 10/100 M + 2-Port 10/100/1000 M Layer-2 Ethernet Switch Data Sheet Features • March 2005 Integrated Single-Chip 10/100/1000 M Ethernet Switch Ordering Information • Sixteen 10/100 Mbps auto-negotiating Fast Ethernet FE ports with RMII or GPSI (7WS) interface

Contextual Info: MVTX2604 Managed 24-Port 10/100 M + 2-Port 10/100/1000 M Layer-2 Ethernet Switch Data Sheet Features • March 2005 Integrated Single-Chip 10/100/1000 M Ethernet Switch Ordering Information • Twenty-four 10/100 Mbps auto-negotiating Fast Ethernet FE ports with RMII or GPSI (7WS)

Contextual Info: DEARBORN MIL STYLE FILM CAPACITORS M IL-C -55514/10 AXIAL-LEAD, W RAP AND FILL POLYPROPYLENE-FOIL CAPACITORS TO MILITARY SPECIFICATION M IL-C-55514/10 M IL S TY LE C FR 15 PART NUMBERING SYSTEM CFR15 A K C 105 K M THIS INFORMATION HAS BEEN ABSTRACTED FROM MIL-C-55514/10.

Contextual Info: AFF-20A-250 ELECTRONIC ATTENUATOR 10 to 5 00 M H z / 0 to 2 0 dB / M ulti-O ctave / O ptim ized fo r M inim im Phase Shift; 3 • Typ. / Fiatpack BIAS +15VDC CONTROL 0 TO 15V -A/VV INPUT O UTPUT PRINCIPAL SPECIFICATIONS Operating Frequency Range, MHz 10 - 100

Contextual Info: ZL50410 Managed8-Port 10/100 M + 1-Port 10/100/1000 M Ethernet Switch Data Sheet Features • • • • January 2005 Integrated Single-Chip 10/100/1000 Ethernet Switch • Eight 10/100 Mbps auto-negotiating Fast Ethernet FE ports with RMII, MII, GPSI,

MAC01

Contextual Info: ZL50408 Managed 8-Port 10/100 M + 1-Port 10/100/1000 M Ethernet Switch Data Sheet Features • • • • January 2005 Integrated Single-Chip 10/100/1000 Ethernet Switch • Eight 10/100 Mbps auto-negotiating Fast Ethernet FE ports with RMII, MII, GPSI,

Contextual Info: ZL50408 Managed 8 - Port 10/100 M + 1-Port 10/100/1000 M Ethernet Switch Data Sheet Features • • • • June 2005 Integrated Single-Chip 10/100/1000 Mbps Ethernet Switch • Eight 10/100 Mbps auto-negotiating Fast Ethernet FE ports with RMII, MII, GPSI,

Contextual Info: ZL50410 Managed 8 - Port 10/100 M + 1 - Port 10/100/1000 M Ethernet Switch Data Sheet Features • • • • June 2005 Integrated Single-Chip 10/100/1000 Mbps Ethernet Switch • Eight 10/100 Mbps auto-negotiating Fast Ethernet FE ports with RMII, MII, GPSI,

2N5006

Abstract: 2N5008 2N5288 2N5317 2N5319 2N5731 2N5957 WALTA
Contextual Info: General Transistor Corporation CASE le max = 10-20A V c e o ( s u s ) = 80-100V NPN Power Transistors ISOLATED COLLECTOR VCEO (aua) M 1C (mm) (A) 2N5006 2N5008 2N5288 2N5289 BO BO 100 100 10 10 10 10 30-90 @5/5 70-200 @ 5/5 30-90 @5/5 70-200 @ 5/5 1.5 @ 10/1

SMD MARKING CODE aO9

Contextual Info: H YB39S64400/800/160BT L 64MBit Synchronous DRAM îlfîîl0Oil 64 M Bit S ynch ro n o u s DRAM • High Perform ance: M ultiple Burst Operation 7.5 -8 -10 Units fCKmax. 133 125 100 M Hz tC K 3 7.5 8 10 ns tA C 3 5.4 6 7 ns tC K 2 10 10 15 ns tA C 2 6 6 8

Contextual Info: ZL50407 Lightly Managed/Unmanaged 8 -Port 10/100 M + 1-Port 10/100/1000 M Ethernet Switch Data Sheet Features • • • • • June 2005 Integrated Single-Chip 10/100/1000 Mbps Ethernet Switch • Eight 10/100 Mbps auto-negotiating Fast Ethernet FE ports with RMII, MII, GPSI,

Contextual Info: ZL50407 Lightly Managed/Unmanaged 8-Port 10/100 M + 1-Port 10/100/1000 M Ethernet Switch Data Sheet Features • • • • • • January 2005 Integrated Single-Chip 10/100/1000 Ethernet Switch • Eight 10/100 Mbps auto-negotiating Fast Ethernet FE ports with RMII, MII, GPSI,

MAC1

Abstract: SC-109 JEDEC
Contextual Info: ZL50416 Managed 16-Port 10/100 M Layer-2 Ethernet Switch Data Sheet Features • March 2005 Integrated Single-Chip 10/100 M Ethernet Switch Ordering Information • Sixteen 10/100 Mbps auto-negotiating Fast Ethernet FE ports with RMII or GPSI (7WS) interface

Contextual Info: MVTX2602 Managed 24-Port 10/100 M Layer-2 Ethernet Switch Data Sheet Features • March 2005 Integrated Single-Chip 10/100 M Ethernet Switch Ordering Information • Twenty-four 10/100 Mbps auto-negotiating Fast Ethernet FE ports with RMII or GPSI (7WS)

Contextual Info: General Transistor Corporation CASE le max = 10-20A NPN Power Transistors V c e o (s u s ) • ISOLATED COLLECTOR VCEO VCE(SÀT) IC/1B (V0A/A) M 1C (mu) (A) 2N5006 2N5008 2N5288 2N5289 B0 80 100 100 10 10 10 10 30-90 @ 5/5 70-200 @ 5/5 30-90 @5/5 70-200 @5/5

ed 9225

Abstract: 5566-2 molex 5566-02AS-210 5566-N RA 8040 5566-08A af/ADM206E/ADM207E/ADM208E/ADM211E/ed 9225
Contextual Info: 10 co 'ST LO 4 .2 — DIM. A F I n n I 4 I 5 In n M M fl«l ,|C M M 6il16m FIn n FI M M 6 |t QSO F I n n 14 II 5 1 F I n n 14 H5 1p in F I M 7|b M 10II 1 M M »il6 M B F I n n M M F in 0II H M 9 II 10 13 IS IT n n n M M F in 1BI 3 1 f,3| »i 6 M h 'l F I n n 14 I 5 16^

Contextual Info: 100V, 20A Low RDS ON N ch Trench Power MOSFET EKG1020 / FKG1020 Features Package TO220 EKG1020  VDS - 100 V  ID - 20 A  RDS(ON) - 33 mΩ typ.(VGS = 10 V, ID = 10 A)

Contextual Info: LITEM Cl SEMICONDUCTORS M B R 1 3 t h r u M B R 1 6 V O LT A G E R ANG E 10 AM PS 30 to 60 V o lts SCHOTTKY BARRIER PECVFIEF CURRENT 10 Amperes FEATURES Plastic package has U /L Flam m ability Classification 94V-0 Exceeds environm ental standards o f M IL-S-19500

300khz mosfet driver IC

Contextual Info: 19-2997; Rev 0; 10/03 m m 10 3.0 m -PIN TD FN KIT ATION EVALU LE B A IL A AV m x 3.0 High-Speed, Wide-Input, Single-Phase MOSFET Driver Features ♦ Single-Phase Synchronous Drivers User-programmable break-before-make circuitry prevents shoot-through currents, maximizing converter efficiency. An enable input allows total driver shutdown

navmat p 4855-1

Contextual Info: \ S IC O R M I-R A M Military Ripple Attenuator Modules MI-RAM Specifications typical at Tbp = 25°C, nominal line, 75% load unless otherwise specified PARAMETER MIN MAX TYP REMARKS 3 mV pp MI-200; 10% to 100% load 10 mV pp MI-J00; 10% to 100% load Input Voltage Range

Contextual Info: FDA20N50_F109 N-Channel UniFETTM MOSFET 500 V, 20 A, 230 m Features Description • RDS on = 230 m (Max.) @ VGS = 10 V, ID = 10 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology.

Contextual Info: ANALOG DEVICES □ FEATURES D C Perform ance 400 |iA m ax Q uiescent Current 10 p A m ax B ias Current, W arm ed U p AD 648C 300 iiV m ax Offset V o ltag e (AD 648C) 3 |juV/°C m ax Drift (AD648C) 2 |xV p - p N oise, 0.1 Hz to 10 Hz A C Perform ance 1.8 V/|l s S le w Rate

Contextual Info: FDP20N50 / FDPF20N50 / FDPF20N50T N-Channel UniFETTM MOSFET 500 V, 20 A, 230 mΩ Features Description • RDS on = 200 mΩ (Typ.) @ VGS = 10 V, ID = 10 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology.

Contextual Info: FDP20N50 / FDPF20N50 / FDPF20N50T N-Channel UniFETTM MOSFET 500 V, 20 A, 230 m Features Description • RDS on = 230 m (Typ.) @ VGS = 10 V, ID = 10 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology.