FDA20N50 Search Results

FDA20

Abstract: *20N50F
Contextual Info: UniFET TM FDA20N50 / FDA20N50_F109 500V N-Channel MOSFET Features Description • 22A, 500V, RDS on = 0.23Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

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Abstract: *20N50F
Contextual Info: UniFETTM FDA20N50F tm N-Channel MOSFET 500V, 22A, 0.26Ω Features Description • RDS on = 0.22Ω ( Typ.) @ VGS = 10V, ID = 11A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Contextual Info: FDA20N50_F109 N-Channel UniFETTM MOSFET 500 V, 20 A, 230 m Features Description • RDS on = 230 m (Max.) @ VGS = 10 V, ID = 10 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to

FDA20N50

Contextual Info: UniFET TM FDA20N50 500V N-Channel MOSFET Features Description • 20A, 500V, RDS on = 0.24Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 45.6 nC)

FDA20N50

Contextual Info: UniFET TM FDA20N50 500V N-Channel MOSFET Features Description • 22A, 500V, RDS on = 0.23Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 45.6 nC)

mosfet equivalent fda 59 n 30

Abstract: FDA20N50
Contextual Info: UniFET TM FDA20N50 500V N-Channel MOSFET Features Description • 22A, 500V, RDS on = 0.23Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 45.6 nC)

FDA20N50F

Contextual Info: UniFETTM FDA20N50F tm N-Channel MOSFET 500V, 22A, 0.26Ω Features Description • RDS on = 0.22Ω ( Typ.) @ VGS = 10V, ID = 11A These N-Channel enhancement mode power field effect transistors are produced using Failchild’s proprietary, planar stripe, DMOS technology.

transistor fda20n50

Abstract: F109 FDA20N50
Contextual Info: TM UniFET FDA20N50 / FDA20N50_F109 500V N-Channel MOSFET Features Description • 22A, 500V, RDS on = 0.23Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

mosfet 500V 20a ultra fast

Contextual Info: FDA20N50F N-Channel UniFETTM FRFET MOSFET 500 V, 22 A, 260 m Features Description • RDS on = 220 m (Typ.) @ VGS = 10 V, ID = 11 A UniFETTM MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on planar stripe and DMOS technology.

Contextual Info: FDA20N50_F109 N-Channel UniFETTM MOSFET 500 V, 20 A, 230 m Features Description • RDS on = 230 m (Max.) @ VGS = 10 V, ID = 10 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology.

Contextual Info: FDA20N50F N-Channel UniFETTM FRFET MOSFET 500 V, 22 A, 260 m Features Description • RDS on = 220 m (Typ.) @ VGS = 10 V, ID = 11 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology.

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

FDA24N50F

Contextual Info: FDA24N50F N-Channel UniFETTM FRFET MOSFET 500 V, 24 A, 200 m Features Description • RDS on = 166 m (Typ.) @ VGS = 10 V, ID = 12 A UniFETTM MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on planar stripe and DMOS technology.

220v AC voltage stabilizer schematic diagram

Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585

IRF250N

Abstract: ir431 FT4066 IR425 irf205 IR413 IR424 IR430 IR520 ir714
Contextual Info: STI Type: 2N5881 Notes: *BVCBO Polarity: NPN Power Dissipation: 160 Tj: 200 VCEV: 60* VCEO: 60 hFE min: 20 hFE max: 100 hFE A: 6.0 VCE: 1.0 VCE A: 7.0 fT: 4.0 Case Style: TO-204AA/TO-3 Industry Type: 2N5881 STI Type: DTS4067 Notes: Polarity: NPN Power Dissipation: 100

Full-bridge LLC resonant converter

Abstract: LLC resonant converter application note resonant converter for welding AN-9067 Resonant Half-Bridge converter LLC resonant converter transformer fdpf10n50 LLC resonant transformer FDPF10N50FT smps resonant llc
Contextual Info: www.fairchildsemi.com AN-9067 Analysis of MOSFET Failure Modes in LLC Resonant Converter Abstract The trend in power converters is towards increasing power densities. To achieve this goal, it is necessary to reduce power losses, overall system size, and weight by increasing

FQPF8N60C equivalent

Abstract: FQPF9N50C equivalent LCD inverter circuit FAN7530 equivalent FAN7601 200w dc to ac inverter Circuit diagram FAN7529 equivalent FAN7601 equivalent FDD6685 equivalent FQPF10N60C equivalent
Contextual Info: Introduction Fairchild offers a wide range of digital display solutions that increase power efficiency and decrease standby power— helping to meet the ever-increasing worldwide demand for energy conservation. Our products can help you meet the most stringent energy regulations including EnergyStar, 80 Plus and other standards specified by organizations such as

interleaved Boost PFC

Abstract: RG44 FDA18N50 FDPF5N50FT FDPF12N50FT fdpf16n50t FDA16N50 FDB12N50 FQA16N50 FDD6N50
Contextual Info: www.fairchildsemi.com AN-9066 UniFET — Optimized Switch for Discontinuous Current Mode Power Factor Correction Abstract This application note discusses merits of planar technology power MOSFET in discontinuous current mode power factor correction application. In most test conditions it is