100 100N 100 Search Results
100 100N 100 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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TMP100NA/3KG4 |
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Temperature Sensor with I2C/SMBus Interface in SOT-23 6-SOT-23 -55 to 125 |
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TMP100NA/250G4 |
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Temperature Sensor with I2C/SMBus Interface in SOT-23 6-SOT-23 |
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LM4040CIM3-10.0/NOPB |
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100-ppm/°C precision micropower shunt voltage reference 3-SOT-23 |
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TMP100NA/3K |
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Temperature Sensor with I2C/SMBus Interface in SOT-23 6-SOT-23 -55 to 125 |
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LM2940T-10.0/NOPB |
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1A Low Dropout Regulator 3-TO-220 -40 to 125 |
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100 100N 100 Price and Stock
Infineon Technologies AG BSZ100N06LS3GATMA1MOSFETs N-Ch 60V 20A TSDSON-8 OptiMOS 3 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BSZ100N06LS3GATMA1 | 25,967 |
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Infineon Technologies AG BSC100N06LS3GATMA1MOSFETs N-Ch 60V 50A TDSON-8 OptiMOS 3 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BSC100N06LS3GATMA1 | 19,169 |
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Infineon Technologies AG BSZ100N06NSMOSFETs TRENCH 40<-<100V |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BSZ100N06NS | 16,059 |
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Infineon Technologies AG BSZ100N03MSGATMA1MOSFETs N-Ch 30V 40A TSDSON-8 OptiMOS 3M |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BSZ100N03MSGATMA1 | 14,805 |
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Vishay Intertechnologies SIHH100N65E-T1-GE3MOSFETs E Series Power MOSFET 650 V (D-S) 150 C MOSFET 0.1 10V |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIHH100N65E-T1-GE3 | 2,628 |
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100 100N 100 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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stm32f107
Abstract: MCBQVGA LD1117S33 pc10 k2 5 CS42L52 LIS302DL PC13-TAMPER-RTC BOOT03
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STM32F107 PC13-TAMPER-RTC PC14-OSC32 PC15-OSC32 1800p 001uF 1800p MCBSTM32C-Vers20 50MHz stm32f107 MCBQVGA LD1117S33 pc10 k2 5 CS42L52 LIS302DL BOOT03 | |
TB214
Abstract: bn-61-2402 BN-61-202 ft37-61 LQ801 bn612402 FT-37-61 bn61-202 P123 FB43101
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22AWG, FT-37-61 FB-43-101 BN-61-2402 TB214, LQ801, 20MHz-1000MHz, TB214 bn-61-2402 BN-61-202 ft37-61 LQ801 bn612402 FT-37-61 bn61-202 P123 FB43101 | |
SDO21
Abstract: n10 n75 JTAG 10P N-61 N78N12
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PA7/SS21/ADC7 PA10/I2C1SDA PA11/I2C1SCL PA12/PWM0 PA13/PWM1 PA14/PWM2 PA15/PWM3 PD0/SS20 PD2/SDI20 PD3/SDO20 SDO21 n10 n75 JTAG 10P N-61 N78N12 | |
PC817 zener diode
Abstract: diode zener 1N4148 BC337 pc817 PC817 PIn L5991 C6 PC817 15V zener PC817 STP10NK60Z con20A
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STPS30H100 PLT20 STX715 1N4148 STTH106 L5991 STP10NK60Z PC817 RL431 PC817 zener diode diode zener 1N4148 BC337 pc817 PC817 PIn L5991 C6 PC817 15V zener PC817 STP10NK60Z con20A | |
BF245
Abstract: "shortwave receiver" shortwave receiver 10,7mhz drm receiver 7808 C4270 SA612 10 MHz 1st IF IC2 LM386
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SFE107 BF245 SA612A V02-Rev1 BF245 "shortwave receiver" shortwave receiver 10,7mhz drm receiver 7808 C4270 SA612 10 MHz 1st IF IC2 LM386 | |
Contextual Info: 2N6718 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)150þ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)100 V(CE)sat Max. (V).50 @I(C) (A) (Test Condition)250m |
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2N6718 Freq50M | |
Contextual Info: FZT653 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)120 I(C) Max. (A)2 Absolute Max. Power Diss. (W)2 Maximum Operating Temp (øC)150 I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)100 h(FE) Min. Current gain.100 h(FE) Max. Current gain.300 |
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FZT653 Freq140M StyleSOT-223 Code4-179 | |
Contextual Info: SG252 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)200m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC) I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.100 h(FE) Max. Current gain. |
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SG252 Freq200M | |
Contextual Info: FCX704 Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)120 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.5 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)100 h(FE) Min. Current gain.3k |
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FCX704 Freq160M | |
Contextual Info: FCX604 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)120 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)100 h(FE) Min. Current gain.2k |
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FCX604 Freq150M | |
Contextual Info: BDB02D Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)500m Absolute Max. Power Diss. (W)1.0’ Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)100 V(CE)sat Max. (V).70 @I(C) (A) (Test Condition)1.0 |
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BDB02D Freq50M | |
Contextual Info: BC372-16 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)625m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)80 h(FE) Min. Current gain.10k |
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BC372-16 Freq100M | |
Contextual Info: FZT704 Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)120 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)100 h(FE) Min. Current gain.3.0k |
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FZT704 Freq160MÃ | |
Contextual Info: FZT493 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)120 I(C) Max. (A)1 Absolute Max. Power Diss. (W)2 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)100 h(FE) Min. Current gain.100 h(FE) Max. Current gain.300 |
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FZT493 Freq150M StyleSOT-223 Code4-179 | |
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Contextual Info: SDT3504 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)7.0 Maximum Operating Temp (øC) I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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SDT3504 Freq50M | |
Contextual Info: LM161RS Transistors Half Bridge MOSFET Power Module Circuits Per Package1 V BR DSS (V)100 V(BR)GSS (V) I(D) Max. (A)33 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)125õ Thermal Resistance Junc-Case I(DSS) Min. (A)1.0m I(GSS) Max. (A)100n @V(GS) (V) (Test Condition) |
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LM161RS | |
Contextual Info: SDT3512 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)29 Maximum Operating Temp (øC) I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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SDT3512 Freq50M | |
Contextual Info: LM161R Transistors Half Bridge MOSFET Power Module Circuits Per Package1 V BR DSS (V)100 V(BR)GSS (V) I(D) Max. (A)33 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)125õ Thermal Resistance Junc-Case I(DSS) Min. (A)1.0m I(GSS) Max. (A)100n @V(GS) (V) (Test Condition) |
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LM161R | |
Contextual Info: LM161S Transistors Half Bridge MOSFET Power Module Circuits Per Package1 V BR DSS (V)100 V(BR)GSS (V) I(D) Max. (A)33 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)125õ Thermal Resistance Junc-Case I(DSS) Min. (A)1.0m I(GSS) Max. (A)100n @V(GS) (V) (Test Condition) |
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LM161S | |
Contextual Info: LM161 Transistors Half Bridge MOSFET Power Module Circuits Per Package1 V BR DSS (V)100 V(BR)GSS (V) I(D) Max. (A)33 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)125õ Thermal Resistance Junc-Case I(DSS) Min. (A)1.0m I(GSS) Max. (A)100n @V(GS) (V) (Test Condition) |
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LM161 | |
Contextual Info: 2N3599 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)20 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)175# I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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2N3599 Freq30M time700n | |
Contextual Info: MINIATURE INDUSTRIAL COMPRESSION LOAD CELL FOR INDUSTRIAL APPLICATIONS TO 200,000 NEWTONS LCMGD Series Shown Actual Size Compression 0-100 to 0-200,000 Newtons LCMGD $ 460 LCMGD-2K LCMGD-100N LCMGD-2KN MADE IN USA LCMGD-50KN NIST ߜ High Accuracy ߜ Low Profile |
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LCMGD-100N LCMGD-50KN LCMGD-200N LCMGD-500N LCMGD-10KN LCMGD-20KN LCMGD-200KN DP41-S, | |
Contextual Info: MJD243 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)4.0 Absolute Max. Power Diss. (W)13 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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MJD243 Freq40M | |
Contextual Info: ZTX653 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)100è V(BR)CBO (V)120 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)2.5 Maximum Operating Temp (øC)175 I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.100 h(FE) Max. Current gain.300 |
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ZTX653 Freq175M StyleTO-92 Code3-12 |