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    LQ801 Price and Stock

    Festo ADVULQ-80-15-P-A

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    Festo AEVULQ-80-10-P-A

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    Festo AEVULQ-80-15-P-A

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    Festo ADVULQ-80-10-P-A

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    Festo ADVULQ-80-15-A-P-A

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    LQ801 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    LQ801 Polyfet RF Devices SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR Original PDF

    LQ801 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    167D

    Abstract: TB167D ph c24 zener diode amidon BN-61-202 ph c20 zener diode ph c13 zener diode ph c24 zener
    Text: July 13, 2012 TB167D#7 Frequency=30-512MHz Pout=100W Gain=30dB Vds=28Vdc Idq=0.4+0.8A Efficiency=38 to 50% LQ801>LB501A PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com July 13, 2012 40 100 35 80 30 60 25 40 20 20 100


    Original     		PDF TB167D 30-512MHz 28Vdc LQ801 LB501A 28Vdc, 0R0J12AFX 167D ph c24 zener diode amidon BN-61-202 ph c20 zener diode ph c13 zener diode ph c24 zener

    LQ801

    Abstract: No abstract text available
    Text: polyfet rf devices LQ801 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE


    Original     		PDF LQ801 LQ801

    TB131

    Abstract: TB-131 LQ801 f940
    Text: TB131 LQ801 W Chart 1 TB131 POUT VS PIN F=940 MHZ; IDQ=0.6A; VDS=28V 40 16 35 15 Pout 30 14 13 20 Gain 12 15 Efficiency = 55% 11 10 10 5 9 0.5 1 1.5 2 PIN IN WATTS Page 1 2.5 3 3.5 4 GAIN IN DB POUT IN WATTS 25


    Original     		PDF TB131 LQ801 TB-131 f940

    LQ801

    Abstract: No abstract text available
    Text: polyfet rf devices LQ801 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.


    Original     		PDF LQ801 LQ801

    LQ801

    Abstract: LDMOS PFS3010
    Text: polyfet rf devices LQ801 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.


    Original     		PDF LQ801 LQ801 LDMOS PFS3010

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices LQ801 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE


    Original     		PDF LQ801

    TB219

    Abstract: lq801
    Text: August 17, 2012 TB219#3 Frequency=30-512MHz Pout=20W Gain=12dB Vds=28Vdc Idq=200mA Efficiency=35-40% LQ801 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com August 17, 2012 25.0 50 22.5 45 20.0 40 17.5 35 15.0 30 12.5


    Original     		PDF TB219 30-512MHz 28Vdc 200mA LQ801 28Vdc, 200mA, LQ801

    TB208

    Abstract: Ft50-43 FT-50-43 LQ801 bn-61-2402 BN612 BN-61-202 SR703 bn612402 10NF
    Text: 120 90 TB208 LQ801->SR703 Freq=20MHz Vds=28Vdc Idq=1.2A Pout/Gain vs. Pin Linear @46W 24.0 23.0 Pout P1dB=75W 60 22.0 Gain 30 0.000 140 21.0 0.100 0.200 0.300 0.400 0.500 0.600 P in in W a tts 0.700 0.800 0.900 TB208 LQ801->SR703 Freq=250MHz Vds=28Vdc Idq=1.2A


    Original     		PDF TB208 LQ801-- SR703 20MHz 28Vdc 250MHz Ft50-43 FT-50-43 LQ801 bn-61-2402 BN612 BN-61-202 bn612402 10NF

    LQ801

    Abstract: SK202 SK2-02 TB-135 470MHZ 650MHZ amplifier 15w
    Text: POLYFET RF DEVICES ANALOG/DIGITAL BROADCAST TV BAND-5 AMPLIFIER TB-135 SK202->LQ801 F=470MHZ, VDS=28V, Idq=.6A 25 35 24 30 22 21 Pout 20 20 1dB compression = 15W 15 19 Gain 10 GAIN IN DB POUT IN WATTS 23 25 18 Efficiency = 23% 17 5 16 15 0.2 0.4 0.6 0.8 1


    Original     		PDF TB-135 SK202-- LQ801 470MHZ, 650MHZ, SK202 SK2-02 470MHZ 650MHZ amplifier 15w

    166A

    Abstract: TB166A LQ801 FT50A-43 LB401 10nF R20 10K ohm TB166 C33-C38 30MHz to 512MHz
    Text: Polyfet RF Devices TB-166A LQ801-> LB401 Gain/Efficiency vs Freq; Vds=28Vdc Idq=1.2A 30 100 27 90 24 80 Gain 21 70 15 Pout fixed at 60W 60 Efficiency 12 50 9 40 6 30 3 40 80 120 160 200 240 280 Freq in MHz 320 360 400 440 480 20 520 Eff in % Gain in dB 18


    Original     		PDF TB-166A LQ801---> LB401 28Vdc 30MHz 166A TB166A LQ801 FT50A-43 10nF R20 10K ohm TB166 C33-C38 30MHz to 512MHz

    LQ801

    Abstract: 28v 30MHZ LB501 TB-167D
    Text: TB-167D LQ801-> LB501 Gain/Efficiency vs Freq; Vds=28Vdc Idq=1.2A 35 100 32 90 28 80 Gain 25 70 Pout fixed at 100W 60 Efficiency 18 50 14 40 11 30 7 20 4 10 20 70 120 170 220 270 Freq in MHz 320 370 420 470 520 Eff in % Gain in dB 21 TB-167D LQ801-> LB501 Pout/Gain vs Pin Freq=30MHz Vds=28Vdc Idq=1.2A


    Original     		PDF TB-167D LQ801---> LB501 28Vdc 30MHz LQ801 28v 30MHZ

    TB214

    Abstract: bn-61-2402 BN-61-202 ft37-61 LQ801 bn612402 FT-37-61 bn61-202 P123 FB43101
    Text: 2 1 +28V C3 10n R1 3.9k C8 10u D1 B B P1 POT L1 22AWG, 9x through FT-37-61 R2 3.9k C1 100n C4 10n T1 22AWG, 9x through FT-37-61 R4 100 T2a RF in L2 COAX C5 100n T3 M1 RF out COAX COAX C2 100n COAX R3 180 COAX COAX C6 100n COAX COAX M2 C7 10n T2b A A R5 100


    Original     		PDF 22AWG, FT-37-61 FB-43-101 BN-61-2402 TB214, LQ801, 20MHz-1000MHz, TB214 bn-61-2402 BN-61-202 ft37-61 LQ801 bn612402 FT-37-61 bn61-202 P123 FB43101

    UT34-25

    Abstract: LQ801 TB151 01UF 33PF
    Text: TB-151Gain & Efficiency Flatness;Vds=28Vdc Idq=200ma 32 70 Efficiency 60 28 50 24 40 Pout fixed at 30W 30 20 Gain 20 16 10 12 800 820 840 860 880 900 920 940 960 Freq in MHz TB-151 Pin vs Pout Freq=800Mhz;Vds=28Vdc Idq=200ma 45 16 Linear @ 15W 40 15 35 14


    Original     		PDF TB-151Gain 28Vdc 200ma TB-151 800Mhz 880Mhz UT34-25 LQ801 TB151 01UF 33PF

    LQ30-254V

    Abstract: LQ60-202V LQ30-105V LQ80-104Y LQ40-504V LQ100-103V LQ30-105Y LQ80-104V LQ101 LQ80-503Y
    Text: TYPE HIGH VOLTAGE FILTER CAPACITORS 65ºC PHENOLIC CAP - PLASTIC FILM DC FILTER [Products | Terms & Conditions | Sales Reps | Tech. Bulletins] [Links | E-Mail | Home] The data contained herein shows only a PARTIAL LISTING of items available for this product line and it gives


    Original     		PDF LQ60-503Y LQ80-104Y LQ100-503Y LQ60-104Y LQ80-254Y LQ100-104Y LQ60-254Y LQ120-102Y LQ120-202Y LQ120-502Y LQ30-254V LQ60-202V LQ30-105V LQ80-104Y LQ40-504V LQ100-103V LQ30-105Y LQ80-104V LQ101 LQ80-503Y

    MGCF21

    Abstract: LY942 MOSFET 50 amp 1000 volt Gx4002 5 watt hf mosfet
    Text: polyfet rf devices LDMOS Flanged Mount Pout Freq Gain theta 28 Volt LDMOS gm Idsat Ciss Crss Coss mho A polyfet rf devices Broad Band RF Power MOSFET LDMOS Transistors Surface Mount Pout Freq Gain theta 12.5 Volt VDMOS S Series gm Idsat Ciss Crss Coss Flanged Mount


    Original     		PDF L8821P LB421 L8821P LP721 SM341 LQ821 SQ701 SR401 MGCF21 LY942 MOSFET 50 amp 1000 volt Gx4002 5 watt hf mosfet

    TB215

    Abstract: bn432402
    Text: 2 1 +28 V C5 10uF R3 3.9k C4 10nF C8 10nF D1 5.6V D2 5.6V P1 10k B C11 10uF L6 D3 5.6V P3 10k P2 10k C23 10uF R10 3.9k C18 10nF R5 1k B L7 L5 L3 R4 150 R8 150 C7 100nF T1 COAX SP201 C3 100nF COAX R6 9.1k C6 10nF R13 100 L4 C12 10nF C9 100nF C13 100nF COAX


    Original     		PDF 100nF SP201 SQ201 TB215 bn432402

    FT-37-43

    Abstract: bn-61-2402 BN-43-2402 FT37-43 BN-61-202 bn612402 bn432402 FT-37-61 LQ801 SP201
    Text: 2 1 +28 V C5 10uF R3 3.9k C4 10nF C8 10nF D1 5.6V D2 5.6V P1 10k B C11 10uF L6 D3 5.6V P3 10k P2 10k C23 10uF R10 3.9k C18 10nF R5 1k B L7 L5 L3 R4 150 R8 150 C7 100nF T1 COAX SP201 C3 100nF COAX R6 9.1k C6 10nF R13 100 L4 C12 10nF C9 100nF C13 100nF COAX


    Original     		PDF 100nF SP201 SQ201 FT-37-43 bn-61-2402 BN-43-2402 FT37-43 BN-61-202 bn612402 bn432402 FT-37-61 LQ801 SP201

    rf push pull mosfet power amplifier

    Abstract: 100 watt hf mosfet 12 volt 150w amplifier RF VHF 139 144 mhz uhf 150w mosfet 150w amplifier RF VHF 139 - 144 mhz LDMOS 15w ldmos l2711 vhf LP801 LK602 LR941
    Text: polyfet rf devices Broad Band RF Power MOSFET Transistors TB# 178 179 180 181 182 183D 184 185 186 187 188 189 191 192 193A 194 195 196 197 199 200NUM1 201 202 203 204 205 206 207 208 210 211 212 Freq Range 136-174 30-88 50-88 118-165 100-500 1.5-30 1.5-30


    Original     		PDF 200NUM1 SQ221 LK822 LK722 LX521 rf push pull mosfet power amplifier 100 watt hf mosfet 12 volt 150w amplifier RF VHF 139 144 mhz uhf 150w mosfet 150w amplifier RF VHF 139 - 144 mhz LDMOS 15w ldmos l2711 vhf LP801 LK602 LR941