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    100 WATT HF TRANSISTOR 12 VOLT Search Results

    100 WATT HF TRANSISTOR 12 VOLT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    100 WATT HF TRANSISTOR 12 VOLT Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: NTE236 Silicon NPN Transistor Final RF Power Output PO = 16W, 27MHz, SSB TO220AB Description: The NTE236 is a silicon NPN transistor in a TO220AB type package designed for 10−14 watt output power class AB amplifier applications in the HF band. Features:


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    NTE236 27MHz, O220AB NTE236 O220AB 27MHz PDF

    300 watt hf transistor 12 volt

    Abstract: arco 467 sd1405 150 watt hf transistor 12 volt arco 465 60WP 100 watt hf transistor 12 volt arco 463
    Contextual Info: SD1405 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . 30 MHz 12.5 VOLTS COMMON EMITTER IMD −32 dB GOLD METALLIZATION P OUT = 75 W MIN. WITH 13 dB GAIN .500 4LFL M174 epoxy sealed ORDER CODE SD1405 BRANDING SD1405 PIN CONNECTION DESCRIPTION The SD1405 is a 12.5 V Class C epitaxial silicon


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    SD1405 SD1405 300 watt hf transistor 12 volt arco 467 150 watt hf transistor 12 volt arco 465 60WP 100 watt hf transistor 12 volt arco 463 PDF

    150 watt hf transistor 12 volt

    Abstract: MIL-STD-1311
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF429 The RF Line NPN Silicon RF Power Transistor . . . designed primarily for high-voltage applications as a high-power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment. • Specified 50 Volt, 30 MHz Characteristics —


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    MRF429 MRF429 150 watt hf transistor 12 volt MIL-STD-1311 PDF

    transistor SG 14

    Abstract: pHEMT transistor tgf2021 TGF2021-04 TGF2021-04-SG 4GHZ TRANSISTOR
    Contextual Info: TrìQuint SEMICONDUCTOR TGF2021-04-SG 4 W, 12V, 20MHz - 4 GHz, pHEMT Wideband RF Transistor Product Description The TriQuint TGF2021-04-SG is a 4 Watt P1dB discrete 4mm pHEMT RF Transistor operating at 12 volts. Both de­ fense and commercial markets can take advantage of the


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    TGF2021-04-SG 20MHz TGF2021-04-SG TGF2021-04-SG. transistor SG 14 pHEMT transistor tgf2021 TGF2021-04 4GHZ TRANSISTOR PDF

    MRF426

    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor MRF426 . . . designed for high gain driver and output linear amplifier stages in 1.5 to 30 MHz HF/SSB equipment. • Specified 28 Volt, 30 MHz Characteristics — Output Power = 25 W PEP


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    MRF426 MRF426 PDF

    MPS-L51

    Abstract: transistor BF 2030
    Contextual Info: MPS-L51 SILICON HIGH VOLTAGE PNP SILICON ANNULAR TRANSISTOR . . . designed for general-purpose, high-voltage amplifier applications. • PNP SILICON AMPLIFIER TRANSISTOR High Breakdown Voltages B V c E O = 100 Vdc (Min), B V c b O “ 100 Vdc (Min) • Low Saturation Voltage


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    MPS-L51 MPS-L51 transistor BF 2030 PDF

    bd136 equivalent

    Abstract: RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ motorola rf power transistors mtbf MOTOROLA ELECTROLYTIC CAPACITOR electrolytic Mallory Capacitor transistor APPLICATIONS Hf 12 v 150 watt transistor bd135 1000 watt Motorola power supply 2779, transistor MUR3160T3
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line RF Power Bipolar Transistors MRF20060 MRF20060S The MRF20060 and MRF20060S are designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high


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    MRF20060 MRF20060S Impedan70 IS22I bd136 equivalent RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ motorola rf power transistors mtbf MOTOROLA ELECTROLYTIC CAPACITOR electrolytic Mallory Capacitor transistor APPLICATIONS Hf 12 v 150 watt transistor bd135 1000 watt Motorola power supply 2779, transistor MUR3160T3 PDF

    150 watt hf transistor 12 volt

    Abstract: ferroxcube wideband hf choke
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line N PN Silico n RF Pow er T ran sistor . . designed for 24 Volt UHF large-signal, common base amplifier applications in industrial and com m ercial FM equipment operating in the range of 8 5 0 -9 6 0 MHz. • Motorola Advanced Amplifier Concept Package


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    Tac0-960 MRF898 150 watt hf transistor 12 volt ferroxcube wideband hf choke PDF

    erf7530

    Abstract: 100 watt hf mosfet 12 volt ERF*7530 100 watt hf mosfet 80 watt hf mosfet ERF-7530 erf7530 mosfet ekl components ERF7530E MAR 703 MOSFET TRANSISTOR
    Contextual Info: ERF7530 RF Power MOSFET - 30MHz / 75 Watt PEP DESCRIPTION The ERF7530 is a MOSFET transistor developed for RF power amplifier applications in the HF frequency range. High power in a TO-218 package for an excellent ‘watt per dollar’ value. TO-218 PACKAGE OUTLINE & MARKINGS


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    ERF7530 30MHz ERF7530 O-218 30MHz 100 watt hf mosfet 12 volt ERF*7530 100 watt hf mosfet 80 watt hf mosfet ERF-7530 erf7530 mosfet ekl components ERF7530E MAR 703 MOSFET TRANSISTOR PDF

    Contextual Info: MOTOROLA Order this document by BUH50/D SEMICONDUCTOR TECHNICAL DATA BUH50 D esigner’s Data Sheet POWER TRANSISTOR 4 AMPERES 800 VOLTS 50 WATTS SWITCHMODE NPN Silicon Planar Power Transistor T h e B U H 5 0 has an a p p lic a tio n s p e c ific s t a t e - o f- a r t d ie d e s ig n e d fo r use in


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    BUH50/D BUH50 21A-06 O-220AB PDF

    transistor B 722

    Abstract: JE 720 transistor JE720 MJE720 MJE721 JE722 BD165 equivalent 500 WATT MJE712 MJE722
    Contextual Info: MJE720 silicon MJE721 MJE722 NPN SILICON MEDIUM POWER TRANSISTORS 1.5 AMPERE POWER TRANSISTORS NPN SILICON . designed for use in low-power amplifiers, as drivers in high-power amplifier and medium*speed switching circuits. 40, 60, 80 VOLTS 20 WATTS DC Current Gain h f e = 40 {Min} @ lc = 150 m Adc


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    MJE720 MJE721 MJE722 MJE710, MJE711, MJE712 BD165, 8D167, BD169 MJE720 transistor B 722 JE 720 transistor JE720 JE722 BD165 equivalent 500 WATT MJE722 PDF

    BROADBAND TRANSFORMERS AND POWER

    Abstract: erie redcap capacitors MRF317 LINEAR RF AMPLIFIER C band FET transistor s-parameters AN878 MRF317 linear amplifier MRF317 LINEAR RF BOARD erie redcap "common drain" amplifier impedance matching Arco 403
    Contextual Info: Order this document by AN878/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN878 VHF MOS POWER APPLICATIONS Prepared by: Roy Hejhall Sr. Staff Engineer INTRODUCTION The assumption is made that the reader is familiar with the types, construction, and electrical characteristics of


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    AN878/D AN878 BROADBAND TRANSFORMERS AND POWER erie redcap capacitors MRF317 LINEAR RF AMPLIFIER C band FET transistor s-parameters AN878 MRF317 linear amplifier MRF317 LINEAR RF BOARD erie redcap "common drain" amplifier impedance matching Arco 403 PDF

    ECG944

    Abstract: external voltage regulator 120 volt input 24 volt philips 170c ECG116 ECG94 ECG946 audio oscillator
    Contextual Info: PHILIPS E C G INC 17E • bbS3iafl 0004355 b T—58—11—13 ECG@ Semiconductors ECG946 POSITIVE VOLTAGE REGULATOR — - l.252>, 31.60 M AX r Electronic "S h u t-D o w n " Control and Short-Circuit Protection Excellent lo a d Regulation(Low O utput Impedance • 20m illiohm s


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    0G04365 ECG946 20milliohms 100kHil ECG946 ECG944 external voltage regulator 120 volt input 24 volt philips 170c ECG116 ECG94 audio oscillator PDF

    ECG946

    Abstract: ECG944
    Contextual Info: PHILIPS E C G INC ECG@ Semiconductors 17E 0 • T—58—11—13 ECG946 POSITIVE VOLTAGE REGULATOR -l.252" 3l.80 M A Xr Electronic "Shut-Down" Control and Short-Circuit Protection Excellent load Regulation(LowOutput Impedance • 20milliohms typ from dc to 100 kHz)


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    ECG946 T--58--11--13 ECG946 20milliohms ECG944 PDF

    apt449a

    Abstract: APT9701 APT9702 hf class AB power amplifier mosfet uhf 200w mosfet mosfet HF amplifier APT9801 200W PUSH-PULL what is the drawback of operating system HF Amplifier 200w
    Contextual Info: Technical Brief APTB 981 Capabilities of Low-cost High Voltage RF Power MOSFETs at HF and VHF Richard Frey, P.E. Advanced Power Technology Inc. 405 SW Columbia St., Bend, Oregon, 97702 ABSTRACT Plastic power MOSFET transistors have found increasing acceptance in all fields of power electronic applications


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    APT9701. ARF448A/B, APT9702. ARF449A/B APT9801. apt449a APT9701 APT9702 hf class AB power amplifier mosfet uhf 200w mosfet mosfet HF amplifier APT9801 200W PUSH-PULL what is the drawback of operating system HF Amplifier 200w PDF

    100 watt hf mosfet 12 volt

    Abstract: transistor c s z 44 v 300 watt hf transistor 12 volt 150 watt hf transistor 12 volt LD810
    Contextual Info: Aft.MOU w an A M P com pany RF MOSFET Power Transistor, 40W, 28V 2 -1 7 5 MHz DU2840V Features • • • • • • N -C hannel E n h an c em e n t M ode Device HF to VHF A pplications 40 W atts CW C o m m o n Source Push-Pull C on fig u ratio n DMOS S tru c tu re


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    DU2840V 10C13C15 100 watt hf mosfet 12 volt transistor c s z 44 v 300 watt hf transistor 12 volt 150 watt hf transistor 12 volt LD810 PDF

    motorola bipolar transistor

    Abstract: MOTOROLA TRANSISTOR BUD42D
    Contextual Info: MOTOROLA Order this document by BUD42D/0 SEMICONDUCTOR TECHNICAL DATA BUD42D Designer’s Data Sheet High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Hetwork and a Transient Voltage Suppression Capability POWER TRANSISTORS 4 AMPERES


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    BUD42D/0 BUD42D BUD42D BUD42D: 69A-13 motorola bipolar transistor MOTOROLA TRANSISTOR PDF

    2N2222A motorola

    Abstract: equivalent transistor 2N2222 2n2222 equivalent s parameters of 2N2222 equivalent of 2n2222 motorola 2N2219 2n2219 equivalent 2n2222 motorola MOTOROLA 2n2222 TRANSISTOR 2N2218A 2N2219A motorola
    Contextual Info: q S S • o f e S M A X IM U M RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current — Continuous Symbol 2N2219 2N2222 2N2218A 2N2219A 2N2222A Unit v CEO 30 40 Vdc v CBO 60 75 Vdc v EBO 5.0 6.0 Vdc mAdc


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    2N2219 2N2222 2N2218A 2N2219A 2N2222A 2N2222A motorola equivalent transistor 2N2222 2n2222 equivalent s parameters of 2N2222 equivalent of 2n2222 motorola 2N2219 2n2219 equivalent 2n2222 motorola MOTOROLA 2n2222 TRANSISTOR 2N2218A 2N2219A motorola PDF

    WRC100

    Abstract: D-60322 WRC-10 H15-Steckerleiste 0024WRC0100 wrc10 EN50140
    Contextual Info: MTM Power Messtechnik Mellenbach GmbH • Fürstenbergerstr. 143 · D-60322 Frankfurt/Main · Tel.: +49- 0 69-15426 0 · Fax: +49-(0)69-15426 10 · www.mtm-power.com · info@mtm-power.com WRC100 DC/DC-Wandler 100 Watt DC/DC Converter 100 Watts Weitbereichseingang


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    D-60322 WRC100 WRC100 WRC-10 H15-Steckerleiste 0024WRC0100 wrc10 EN50140 PDF

    transistor 936

    Abstract: 100 watt hf mosfet 12 volt 150 watt hf transistor 12 volt transistor qz transistor rf m 2528 DU2840V 100 watt hf transistor 12 volt 1000 watt hf transistor 12 volt atc ldo LDS100
    Contextual Info: A tÓ K m m an A M P com pany RF MOSFET Power Transistor, 40W, 28V 2 -1 7 5 MHz DU2840V Features • • • • • • N-Channel Enhancement Mode Device HF to VHF Applications 40 Watts CW Common Source Push-Pull Configuration DMOS Structure Aluminum Metallization


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    DU2840V 5b422D5 C7C9C12C14 C10C13C15 5b4BE05 transistor 936 100 watt hf mosfet 12 volt 150 watt hf transistor 12 volt transistor qz transistor rf m 2528 DU2840V 100 watt hf transistor 12 volt 1000 watt hf transistor 12 volt atc ldo LDS100 PDF

    GaN matching 100 watt

    Abstract: GaN Bias 25 watt RF Transistor impedance matching
    Contextual Info: Image Courtesy of U.S. Navy PowerBandTM – Redefining Wideband RF Technology What exactly is PowerBand ? PowerBand™ is a patent pending-technology developed by TriQuint that significantly increases the instantaneous bandwidth of a discrete high-power RF semiconductor transistor without any significant impact on efficiency or


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    PDF

    TEA5101A

    Abstract: transistor t8 hf tube cascode B8274 tda3562a crt tube schematic diagram induction heater TEA5031D 5101A-04 29 CRT TV circuits DIAGRAM
    Contextual Info: APPLICATION NOTE TEA5101A - RGB HIGH VOLTAGE AMPLIFIER BASIC OPERATION AND APPLICATIONS By Ch. MATHELET SUMMARY Page I I.1 I.2 I.3 I.4 I.4.1. I.4.2. I.4.3. II II.1 II.1.1 II.1.2. II.1.2.1. II.1.2.2. II.2 II.2.1. II.2.2. III III.1 III.1.1. III.1.2. III.1.3.


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    TEA5101A transistor t8 hf tube cascode B8274 tda3562a crt tube schematic diagram induction heater TEA5031D 5101A-04 29 CRT TV circuits DIAGRAM PDF

    22k potentiometer

    Abstract: transistor t8 schematic diagram induction heater TEA5101A gun diode amplifier thomson china tv schematic diagram philips colour television picture tube pin volt 6kw class d circuit diagram schematic hf tube cascode tda3562a
    Contextual Info: APPLICATION NOTE TEA5101A - RGB HIGH VOLTAGE AMPLIFIER BASIC OPERATION AND APPLICATIONS By Ch. MATHELET SUMMARY Page I I.1 I.2 I.3 I.4 I.4.1. I.4.2. I.4.3. II II.1 II.1.1 II.1.2. II.1.2.1. II.1.2.2. II.2 II.2.1. II.2.2. III III.1 III.1.1. III.1.2. III.1.3.


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    TEA5101A 22k potentiometer transistor t8 schematic diagram induction heater gun diode amplifier thomson china tv schematic diagram philips colour television picture tube pin volt 6kw class d circuit diagram schematic hf tube cascode tda3562a PDF

    500w power amplifier circuit diagram

    Abstract: HEXFET Power MOSFET designer manual PCIM 177 APT9302 Transistor C538 200w power amplifier PCB layout 500 watt mosfet power amplifier circuit diagram 400w power amplifier PCB layout 500w hf power amplifier circuit diagram F624-19Q1
    Contextual Info: APPLICATION NOTE APT9501 By: Kenneth Dierberger Bobby McDonald Lee B. Max A High-Efficiency 400 Watt 13.56 MHz RF Power Amplifier Presented at RF EXPO WEST 1995 1 A High-Efficiency 400 Watt 13.56 MHz RF Power Amplifier Kenneth Dierberger Applications Engineering Manager


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    APT9501 400Watt, 56MHz 100VDC F-33700 500w power amplifier circuit diagram HEXFET Power MOSFET designer manual PCIM 177 APT9302 Transistor C538 200w power amplifier PCB layout 500 watt mosfet power amplifier circuit diagram 400w power amplifier PCB layout 500w hf power amplifier circuit diagram F624-19Q1 PDF