1000 WATT HF TRANSISTOR 12 VOLT Search Results

transistor SG 14

Abstract: pHEMT transistor tgf2021 TGF2021-04 TGF2021-04-SG 4GHZ TRANSISTOR
Contextual Info: TrìQuint SEMICONDUCTOR TGF2021-04-SG 4 W, 12V, 20MHz - 4 GHz, pHEMT Wideband RF Transistor Product Description The TriQuint TGF2021-04-SG is a 4 Watt P1dB discrete 4mm pHEMT RF Transistor operating at 12 volts. Both de­ fense and commercial markets can take advantage of the

150 watt hf transistor 12 volt

Abstract: ferroxcube wideband hf choke
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line N PN Silico n RF Pow er T ran sistor . . designed for 24 Volt UHF large-signal, common base amplifier applications in industrial and com m ercial FM equipment operating in the range of 8 5 0 -9 6 0 MHz. • Motorola Advanced Amplifier Concept Package

Contextual Info: MOTOROLA Order this document by BUH50/D SEMICONDUCTOR TECHNICAL DATA BUH50 D esigner’s Data Sheet POWER TRANSISTOR 4 AMPERES 800 VOLTS 50 WATTS SWITCHMODE NPN Silicon Planar Power Transistor T h e B U H 5 0 has an a p p lic a tio n s p e c ific s t a t e - o f- a r t d ie d e s ig n e d fo r use in

bd136 equivalent

Abstract: RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ motorola rf power transistors mtbf MOTOROLA ELECTROLYTIC CAPACITOR electrolytic Mallory Capacitor transistor APPLICATIONS Hf 12 v 150 watt transistor bd135 1000 watt Motorola power supply 2779, transistor MUR3160T3
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line RF Power Bipolar Transistors MRF20060 MRF20060S The MRF20060 and MRF20060S are designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUD44D2 Advance Information POWER TRANSISTORS 2 AMPERES 700 VOLTS 25 WATTS High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Em itter Diode and Built-in Efficient Antisaturation Netw ork T h e B U D 4 4D 2 is s ta te -o f-a rt High Speed High gain BIPolar transistor H 2B IP .

100 watt hf mosfet 12 volt

Abstract: transistor c s z 44 v 300 watt hf transistor 12 volt 150 watt hf transistor 12 volt LD810
Contextual Info: Aft.MOU w an A M P com pany RF MOSFET Power Transistor, 40W, 28V 2 -1 7 5 MHz DU2840V Features • • • • • • N -C hannel E n h an c em e n t M ode Device HF to VHF A pplications 40 W atts CW C o m m o n Source Push-Pull C on fig u ratio n DMOS S tru c tu re

transistor 936

Abstract: 100 watt hf mosfet 12 volt 150 watt hf transistor 12 volt transistor qz transistor rf m 2528 DU2840V 100 watt hf transistor 12 volt 1000 watt hf transistor 12 volt atc ldo LDS100
Contextual Info: A tÓ K m m an A M P com pany RF MOSFET Power Transistor, 40W, 28V 2 -1 7 5 MHz DU2840V Features • • • • • • N-Channel Enhancement Mode Device HF to VHF Applications 40 Watts CW Common Source Push-Pull Configuration DMOS Structure Aluminum Metallization

Contextual Info: ANALOG DEVICES Dual Picoampere Input Current Bipolar Op Amp AD706 FEATURES CONNECTION DIAGRAM HIGH DC PRECISION 50 nV max Offset Voltage 0.6 n V /°C max Offset Drift 110 pA max Input Bias Current Plastic Mini-DIP N Cerdip (Q) and Plastic SOIC (R) Packages

apt449a

Abstract: APT9701 APT9702 hf class AB power amplifier mosfet uhf 200w mosfet mosfet HF amplifier APT9801 200W PUSH-PULL what is the drawback of operating system HF Amplifier 200w
Contextual Info: Technical Brief APTB 981 Capabilities of Low-cost High Voltage RF Power MOSFETs at HF and VHF Richard Frey, P.E. Advanced Power Technology Inc. 405 SW Columbia St., Bend, Oregon, 97702 ABSTRACT Plastic power MOSFET transistors have found increasing acceptance in all fields of power electronic applications

motorola bipolar transistor

Abstract: MOTOROLA TRANSISTOR BUD42D
Contextual Info: MOTOROLA Order this document by BUD42D/0 SEMICONDUCTOR TECHNICAL DATA BUD42D Designer’s Data Sheet High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Hetwork and a Transient Voltage Suppression Capability POWER TRANSISTORS 4 AMPERES

Contextual Info: FP31QF 2 – Watt HFET Product Information • RFID: HF, UHF, microwave • Readers • • • Industrial Portable Handheld Units Min Typ Saturated Drain Current, I dss Transconductance, Gm Pinch Off Voltage, Vp 1 Thermal Resistance Junction Temperature (2)

Contextual Info: FP31QF 2 – Watt HFET Product Information Applications • RFID: HF, UHF, microwave • Readers Saturated Drain Current, I dss Transconductance, Gm Pinch Off Voltage, Vp 1 RF Parameter (2) Operational Bandwidth Test Frequency Small Signal Gain Maximum Stable Gain

MCP1702 MC

Abstract: 1702 5002e 1702 3302e AN765 AN792 MCP1702 20000 watts power amplifier circuit diagrams MCP1702-5002 A1 marking code sot-89
Contextual Info: MCP1702 250 mA Low Quiescent Current LDO Regulator Features Description • • • • • The MCP1702 is a family of CMOS low dropout LDO voltage regulators that can deliver up to 250 mA of current while consuming only 2.0 µA of quiescent current (typical). The input operating range is specified

MCP1702T-3302E/CB

Abstract: mark A E sot-89-3 20000 watts power amplifier circuit diagrams MCP1702-5002 1702 5002e MS 5002E AN765 AN792 MCP1702 1702 3302e
Contextual Info: MCP1702 250 mA Low Quiescent Current LDO Regulator Features Description • • • • • The MCP1702 is a family of CMOS low dropout LDO voltage regulators that can deliver up to 250 mA of current while consuming only 2.0 µA of quiescent current (typical). The input operating range is specified

Contextual Info: MCP1702 250 mA Low Quiescent Current LDO Regulator Features: Description: • • • • • The MCP1702 is a family of CMOS low dropout LDO voltage regulators that can deliver up to 250 mA of current while consuming only 2.0 µA of quiescent current (typical). The input operating range is specified

1702 5002e

Abstract: 1702 3302e 20000 watts power amplifier circuit diagrams AN765 AN792 MCP1702 ha1014 MARK HC SOT-89 MCP1702-5002
Contextual Info: MCP1702 250 mA Low Quiescent Current LDO Regulator Features: Description: • • • • • The MCP1702 is a family of CMOS low dropout LDO voltage regulators that can deliver up to 250 mA of current while consuming only 2.0 µA of quiescent current (typical). The input operating range is specified

723 VOLTAGE REGULATOR

Abstract: keystone carbon thermistor MC1723 rmc disc capacitor
Contextual Info: MOTOROLA •i SEMICONDUCTOR TECHNICAL DATA The RF Power MOS Line MRF157 Power Field Effect Transistor M otorola Preferred Device N-Channel Enhancement Mode Designed primarily for linear large-signal output stages to 80 MHz. • Specified 50 Volts, 30 MHz Characteristics

Contextual Info: PLED-P-xxxKA Rev.11-2010 PMLEDP-SERIES DIP24 Package WIRE Connection Step-Down Converter Constant Current High Efficiency Dimming Function Remote Control Mainzer Straße 151–153 D-55299 Nackenheim Tel. +49 6135 7026-0 Fax: +49 6135 931070 www.peak-electronics.de

Contextual Info: PLED-P-xxxLF Rev.11-2010 PMLEDP-SERIES DIP24 Package Step-Down Converter Constant Current High Efficiency Dimming Function Remote Control Mainzer Straße 151–153 D-55299 Nackenheim Tel. +49 6135 7026-0 Fax: +49 6135 931070 www.peak-electronics.de peak@peak-electronics.de

FP1189

Abstract: 8893 application diagram
Contextual Info: FP1189 ½ - Watt HFET Product Information Product Features • • • • • • • • Product Description 50 – 4000 MHz ISO & EPC compliant +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz MTTF >100 Years SOT-89 SMT Package

SD3932

Abstract: pF CAPACITOR 100v 700B
Contextual Info: SD3932 RF power transistors HF/VHF/UHF N-channel MOSFETs Preliminary Data Features • Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 350 W min. with 26.8 dB gain @ 123 MHz ■ In compliance with the 2002/95/EC

100C

Abstract: 700B SD3932
Contextual Info: SD3932 RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 350 W min. with 26.8 dB gain @ 123 MHz ■ In compliance with the 2002/95/EC European directive

MCP1702

Abstract: mark A E sot-89-3 AN765 AN792 20000 watts power amplifier circuit diagrams
Contextual Info: MCP1702 250 mA Low Quiescent Current LDO Regulator Features Description • • • • • The MCP1702 is a family of CMOS low dropout LDO voltage regulators that can deliver up to 250 mA of current while consuming only 2.0 µA of quiescent current (typical). The input operating range is specified

Fp2189

Contextual Info: FP2189 1 - Watt HFET Product Information Product Features • • • • • • • • 50 – 4000 MHz ISO & EPC compliant +30 dBm P1dB +43 dBm Output IP3 High Drain Efficiency 18.5 dB Gain @ 900 MHz MTTF >100 Years SOT-89 SMT Package Functional Diagram