1000-1 DIODES Search Results

1N5622

Contextual Info: 1N5622 1000 V 1 A miniature glass passivated junction medium-switching rectifier 1.99 . Page 1 of 1 Enter Your Part # Home Part Number: 1N5622 Online Store 1N5622 Diodes 1000 V 1 A miniature glass passivated junction medium- Transistors switching rectifier

Contextual Info: Fast Recovery Epitaxial Diodes FRED DSEI 2x61 IFAVM = 2x60 A vRRM= 1000 v trr — v RSM Type V rrm V V 1000 1000 Symbol 1 > miniBLOC, SOT-227 B 1 DSEI 2x61-10B Test Conditions Maximum Ratings (per diode) 'frm "^vj “ Tvjm Tc= 50°C; rectangular, d = 0.5

Diode 1N4007 DO-7 Rectifier Diode

Abstract: 1N40075 BYX/400 1N4007 RECTIFIER DIODE 4007 uf 1200 BAX12 BYW52 BYW53 BYW54 BYW55
Contextual Info: Diodes Rectifier and Avalanche diodes Type BY 202 BY 203 BY 204 Maximum ratings Notes Characteristics V 4 8006 90 <300 £ 1 .0 200 £ 507) Contact protection diode 2 5 1000') 200 £100 £ 1 .2 1000 £ 3503) Fast rectifier diodes 3 5 1000') 300 £100 <1.2

DO200AB

Abstract: l701
Contextual Info: International I 8 R Rectifier Diodes Standard Recovery DO-200AB B-Puk SD 700C30L 3000 700 55 1 .6 6 1000 6310 6600 0 .0 5 SD 700C36L 3600 700 55 1 .6 6 1000 6310 6 6 ÍX ) 0 .0 5 SD 700C40L 4000 700 55 1 .6 6 1000 6310 6600 0 .0 5 SD 700C45L 4500 700 55

P1000

Contextual Info: P 1000 A.P 1000 S &  Axial lead diode Standard silicon rectifier diodes P 1000 A.P 1000 S ;  ?  5  ?  ? 0 30  5  ?  ? 0   ?    ? )   1 7  1 D  1 4  1 E  1 :  1 =  1  #; # , 1  " 

Contextual Info: •_4bßb22b 0 0 0 1 Ö2 S 5^2 M I X Y □IXYS Fast Recovery Epitaxial Diodes DSEI 2x61 lFAV = 2x60 A V rrm trr = 600-1000 V < 50 ns miniBLOC, SOT-227 B V v*» V 640 800 1000 600 800 1000 Type p ° ! 3 •- — Symbol Test Conditions 'frms *FAV* 1 Ifmi

F5NK100Z

Abstract: STP5NK100Z P5NK100Z STF5NK100Z STW5NK100Z W15NK100Z
Contextual Info: STP5NK100Z - STF5NK100Z STW5NK100Z N-CHANNEL 1000V - 2.7Ω - 3.5A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESH MOSFET Figure 1: Package Table 1: General Features TYPE VDSS RDS on ID Pw STF5NK100Z STP5NK100Z STW5NK100Z 1000 V 1000 V 1000 V < 3.7 Ω

p5nk100

Abstract: p5nk100z F5NK100Z JESD97 STF5NK100Z STP5NK100Z STW5NK100Z W15NK100Z
Contextual Info: STP5NK100Z - STF5NK100Z STW5NK100Z N-CHANNEL 1000V - 2.7Ω - 3.5A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESH MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS on ID Pw STF5NK100Z STP5NK100Z STW5NK100Z 1000 V 1000 V 1000 V < 3.7 Ω

Contextual Info: B Y T 2 3 0 P IV - 1 0 0 0 B Y T 2 3 1 P IV - 1 0 0 0 FAST R ECO VER Y R ECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS I f a v 2x30 A V rrm 1000 V V f (max) 1.8 V trr (max) 80 ns ESS ˌ K2 A2 K1 A1 A2 K1 K2 A1 BYT231PIV-1000 BYT230PIV-1000 FEATURES AND BENEFITS

Contextual Info: 1N5554 1000 V rectifier 5.0 A forward current 2000 ns recovery time 21.23 Diodes High. Page 1 of 1 Enter Your Part # Home Part Number: 1N5554 Online Store 1N5554 Diodes 1000 V rectifier 5.0 A forward current 2000 ns recovery Transistors time Integrated Circuits

SDD25

Abstract: SDD25N01 SDD25N02 SDD25N03
Contextual Info: SDD25 Discrete Diodes Dimensions TO-247AD 3 2 1 SDD25N01 SDD25N02 SDD25N03 SDD25N04 SDD25N05 SDD25N06 SDD25N07 1 VRSM V 50 100 200 400 600 800 1000 Symbol IFRMS IF AV M 2 3 VRRM V 50 100 200 400 600 800 1000 Test Conditions TVJ=TVJM TC=100oC; 180o sine Dim.

SDD25N03

Abstract: SDD25 SDD25N01 SDD25N02
Contextual Info: SDD25 Discrete Diodes Dimensions TO-247AD 3 2 1 SDD25N01 SDD25N02 SDD25N03 SDD25N04 SDD25N05 SDD25N06 SDD25N07 1 VRSM V 50 100 200 400 600 800 1000 Symbol IFRMS IF AV M 2 3 VRRM V 50 100 200 400 600 800 1000 Test Conditions TVJ=TVJM TC=100oC; 180o sine Dim.

Contextual Info: SEM IK R G N 1SE D I INC f i l i t i t,71 GGQIVO? 4 | T 33 seMSKRDn Maximum Ratings Symbol Conditions VcEVsus VCEV VcBO V ebo lc I! = 1 II I ro < m < CD m ICM = lc D .C. tp = 1 ms lc If 1000 1000 1000 7 50 100 1 A.Vbe = - 2 V = • Ib Ptot Tvi Tease = 25 °C

170M6462

Abstract: 170H3006 170M7031 170H3027 170M8554 170M8608 170M2666 170M7636 170M7595 170M6814
Contextual Info: High Speed Fuses Square Body Fuses General Information Introduction Square Body Contents Page Application Information 115-116 Volts IEC/UL Size 000,00 690/700 1*, 1, 2, 3 1*, 2, 3 4 23, 24 00, 1, 2, 3 00 1000 1*, 1, 2, 3 4 24 1*, 1, 2, 3 1250/1300 1000-2000

GE C712

Abstract: C712 thyristor GE C712 thyristor A430 A430A A430B A437A A437B A570 A570A
Contextual Info: RECTIFIERS 183 750 TO 1500 AMPERES GE TYPE JEDEC SPECIFICATIONS_ . Max. average forward current F M A V (1 phase operation) (A) A437 A596 A430 A 54 0 A696 A570 A640 - - - - - - - 750 1000 1000 1000 1500 1500 65 126 100 - 80 80 750 -j >T c - (°C)

p5nk100z

Abstract: W15NK100Z F5NK100Z p5nk100 STF5NK100Z STW5NK100Z 22 B2 zener
Contextual Info: STP5NK100Z - STF5NK100Z STW5NK100Z N-CHANNEL 1000V - 2.7Ω - 3.5A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESH MOSFET PRODUCT PREVIEW Figure 1: Package Table 1: General Features TYPE VDSS RDS on ID Pw STF5NK100Z STP5NK100Z STW5NK100Z 1000 V 1000 V

SF1154

Abstract: A430 A430A A430B A437A A437B A570 A570A A570B A596
Contextual Info: RECTIFIERS 183 750 TO 1500 AMPERES GE TYPE JEDEC SPECIFICATIONS_ . Max. average forward current FM A V (1 phase operation) (A) A437 A 596 A430 A 540 A 696 A 570 A 640 - - - - - - - 750 1000 1000 1000 1500 1500 65 126 100 - 80 80 750 -j >T c - (°C)

UTD-1000

Abstract: Avantek utd-1000
Contextual Info: W h p lHEWLETT' mWLM P A C K A R D Avantek Products Analog Level Detectors 10 to 1000 MHz Technical Data UTD-1000/1001 Features Description Pin Configuration • -1 2 0 mV O utput for -1 0 dBm Pin The lJTD-1000 has an input im pedance of 50 ohms. The lITD-1001 has an input im pedance

A540

Abstract: A430E A430 A430A A430B A437A A437B A570 A570A A570B
Contextual Info: RECTIFIERS 183 750 TO 1500 AMPERES GE TYPE JEDEC SPECIFICATIONS_ . Max. average forward current FM A V (1 phase operation) (A) A437 A 596 A430 A 540 A 696 A 570 A 640 - - - - - - - 750 1000 1000 1000 1500 1500 65 126 100 - 80 80 750 -j >Tc - (°C)

A570B

Abstract: A430 A430A A430B A437A A437B A570 A570A A596 A640
Contextual Info: RECTIFIERS 183 750 TO 1500 AMPERES GE TYPE JEDEC SPECIFICATIONS_ . Max. average forward current FM A V (1 phase operation) (A) A437 A 596 A430 A 540 A 696 A 570 A 640 - - - - - - - 750 1000 1000 1000 1500 1500 65 126 100 - 80 80 750 -j >T c - (°C)

Contextual Info: 2N6383 10 A N-P-N Darlington Power Transistor. 40 V. 100 W. Gain Of 1000 At 5 A. 1. Page 1 of 2 Enter Your Part # Home Part Number: 2N6383 Online Store 2N6383 Diodes 10 A N -P-N Darlington Power Transistor. 40 V. 100 W. Transistors Gain Of 1000 At 5 A. Integrated Circuits

1450

Abstract: 70HF120
Contextual Info: International IGR Rectifier Part Number Diodes VRRM M I fav @ t C W Q ' f(*V W 50 Hi W 60Hz K o c h e l W (°C/W) Notes Demand Number Outline Key Standard Recovery 70HF120 1200 70 140 1 35 1000 1050 0.45 9 12 20202 70HF140 Ì 400 70 no 1 35 1000 1050 0.45

Contextual Info: International I 8 R Rectifier Fast Recovery Diodes Discrete DQ-205AC D0-30 S D 103N 04S 10P V 400 110 85 3000 3140 2.23 0 .1 6 1000 2 4 12 1 14 15 82062 S D I0 3 N 0 8 S 1 0 P V 800 1 10 85 3000 3 14 0 2.23 0 .1 6 1000 2 4 12 1 14 15 82062 82062 S D IO 3 N 1 0 S 1 O P V

Contextual Info: Attenuator 5 to 1000 MHz Technical Data UTF-015 Features Description Pin Configuration • < 1.6:1 VSWR The UTF-015 is a thin-film voltagecontrolled RF attenuator that offers a continuously-variable attenuation of up to 20 dB from 5 to 1000 MHz. Utilizing PIN diodes,