1997IXYS Search Results

Contextual Info: HiPerFET Power MOSFETs IXFN26N90 v DSS N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr ^D25 ^ D S o n K Symbol TestConditions V DSS Tj = 25°C to 150°C Voo* TJ Vos VGSM 1» Tc= 25°C, Chip capability •dm u Tc= 25°C, puise width limited by TJM

Contextual Info: □ I X Y S Fast Recovery Epitaxial Diode FRED v* RSM V ^ rrm DSEI 30 *fa vm - 3 0 A VRRM = 1 0 0 0 V trr = 35 ns A Type C l \ TO-247 AD V 1000 1000 DSEI30-10A A Symbol Test Conditions ^FRMS I•favm ★ ^FRM Tyj Tvjm Tc = 85°C; rectangular, d = 0.5 t, < 10 us; rep. rating, pulse width limited by TVJM

FR 0169

Abstract: 2X61-06C
Contextual Info: Fast Recovery Epitaxial Diodes FRED DSEI 2x61 lFAVM = 2x60 A vRRM= 400/600 V trr vV RSM V rrm \_0 V 440 640 400 600 DSEI 2x61-04C DSEI 2x61-06C Test Conditions Maximum Ratings (per diode) V rm "*"vj = T/ jm T . = 70°C; rectangular, d = 0.5 tp < 10 us; rep. rating, pulse width limited by T vjm

Contextual Info: Fast Recovery Epitaxial Diodes FRED DSEI 2x61 IFAVM = 2x60 A vRRM= 1000 v trr — v RSM Type V rrm V V 1000 1000 Symbol 1 > miniBLOC, SOT-227 B 1 DSEI 2x61-10B Test Conditions Maximum Ratings (per diode) 'frm "^vj “ Tvjm Tc= 50°C; rectangular, d = 0.5

16N60

Abstract: RGE 17-18 7B732 IXSA16N60 IXSP16N60
Contextual Info: Preliminary Data Sheet IXSA 16N60 IXSP 16N60 Low VCE sat IGBT Short Circuit SOA Capability V ' ces Tj = 25°C to 150°C 600 V v CGR Tj = 25°C to 150°C; RGE = 1 Mi2 600 V vy g e s Continuous ±20 V VGEM Transient ±30 V 'c 2 5 Tc = 25 °C 32 A 'c 9 0 Tc = 90°C

Contextual Info: Fast Recovery Epitaxial Diode FRED DSEI 60 lFAVM = 60 A v RRM= 1000 v trr = 35 ns TO-247 AD c A Symbol Test Conditions *FRMS T VJ - T VJU Maximum Ratings 100 60 800 A A A 10 ms (50 Hz), sine 8.3 ms (60 Hz), sine 500 540 A A TVJ = 150°C; t = 10 ms (50 Hz), sine

IXGH24N60BU1

Abstract: 24N50 HIPERFAST IGBT WITH DIODE 24N60 IXGH24N50BU1
Contextual Info: DIXYS Prelim inary data HiPerFAST IGBT with Diode IXGH24N50BU1 IXGH24N60BU1 V CES ^C 25 V CE(sat) t,i 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns Combi Pack TO-247 SMD (24N*BU1S) U Symbol Test Conditions 24N50 24N60 V CES ^ = 25 °C to 150°C 500 600

Contextual Info: D 1 X Y S Preliminary data HiPerFAST IGBT with Diode IXGX50N60AU1 IXGX50N60AU1S Combi Pack v CES ^C25 vv CE sat tfi = 600 V = 75 A = 2.7 V = 275 ns TO-247 Hole-less SMD (50N 60AU 1S) Symbol Test Conditions Maximum Ratings v CES T j = 25°C to 150°C 600

Contextual Info: Fast Recovery Epitaxial Diodes FRED DSEI 2x30 lFAVM = 2x30 A DSEI 2x31 VRRM = 1000 V trr v RSM v RRM = 35 ns miniBLOC, SOT-227 B Type -N Ho V V 1 0 00 Symbol 10 00 DSEI 2x30-10B DSEI 2x31-1 OB Test Conditions O 0 DSEI 2x30 Maximum Ratings (per diode) Tc = 50° C; rectangular, d = 0.5

1xys

Abstract: 90a944
Contextual Info: Ultra-Low VCE sat IGBT IXGN 60N60 VCES ^C25 VCE(sat) Symbol Test Conditions V CES TJ = 25°C to 150°C 600 V v CGR Tj = 25°C to 150°C; RGE = 1 MU 600 V V GES Continuous ±20 V v GEM Transient +30 V ^C25 Tc = 25°C 100 A ^C90 Tc = 90°C 60 A •cm Tc 200

Contextual Info: nixYS Fast Recovery Epitaxial Diode FRED DSEI12 IFAVM vrRRM 35 ns t ^HSM V v RRM f A Type C l \ 14 A 600 V TO-220 AC V 640 600 DSEI12-06A Symbol Test Conditions Urms Uavm * ^FHM T VJ Jpdt Maximum Ratings “ 1"vjM Tc = 100°C; rectangular, d = 0.5 tp < 10 (xs; rep. rating, pulse width limited by TVJM

Contextual Info: nixYS Common Cathode Fast Recovery Epitaxial Diode FRED DSEK30 r— v nsM V v RRM V 1200 1200 ~l Type I -N -. f 4 " — A DSEK 30-12A iFAVM ic V,RR M 2x26 A 1200 V t„ 40 ns TO-247 AD Î A A C (TAB) Symbol Test C onditions ^FRMS "^"vj IpAVM ^FRM JPdt P,o,