smd transistor 26
Abstract: KTS2005
Text: IC IC SMD Type Liquid Crystal Display Backlight Drive Applications KTS2005 TSSOP-8 Unit: mm Features Low ON resistance. Ultrahigh-speed switching. Mounting height 1.1mm. 1,5,8: Drain 2,3,6,7: Source 4: Gate Absolute Maximum Ratings Ta = 25 Symbol Rating Unit
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KTS2005
1000mm2X0
smd transistor 26
KTS2005
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KTD2005
Abstract: No abstract text available
Text: IC IC SMD Type Ultrahigh-Speed Switching Applications KTD2005 TSSOP-8 Unit: mm Features Low ON resistance. 2.5V drive. Mounting height 1.1mm. Composite type, facilitating high-density mounting. 1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2
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KTD2005
KTD2005
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA2243 ECH8697R N-Channel Power MOSFET 24V, 10A, 11.6mΩ, Dual ECH8 Common Drain http://onsemi.com Features • Low On-resistance • 2.5V drive • Common-Drain Type • Protection diode in • Built-in gate protection resistor • Best suited for LiB charging and discharging switch
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ENA2243
ECH8697R
A2243-5/5
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A1324
Abstract: a1324 application note D7010 FTD7010
Text: FTD7010 Ordering number : ENA1324 SANYO Semiconductors DATA SHEET FTD7010 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • 1.8V drive. Mount heigt 1.1mm. Coposite type, facilitating high-density mounting. Specifications
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FTD7010
ENA1324
PW10s,
1000mm2
A1324-4/4
A1324
a1324 application note
D7010
FTD7010
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M2026
Abstract: VGS-50-5 DS2-DC ta2129 FSS206 EN5886A
Text: Ordering number:EN5886A N-Channel Silicon MOSFET FSS206 DC-DC Converter Applications Features Package Dimensions • Low ON resistance. · 4V drive. unit:mm 2116 [FSS206] 5 4 0.595 1.27 0.43 0.1 1.5 5.0 1:Source 2:Source 3:Source 4:Gate 5:Drain 6:Drain 7:Drain
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EN5886A
FSS206
FSS206]
1000mm2
M2026
VGS-50-5
DS2-DC
ta2129
FSS206
EN5886A
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D1498TS
Abstract: TA1283 FW213
Text: Ordering number:EN5908 P-Channel Silicon MOSFET FW213 DC-DC Converter Applications Features Package Dimensions • Low ON resistance. · 4V drive. unit:mm 2129 [FW213] 5 4 Specifications 0.595 1.27 0.43 0.1 1.5 5.0 1:Source1 2:Gate1 3:Source2 4:Gate2 5:Drain2
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EN5908
FW213
FW213]
D1498TS
TA1283
FW213
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Untitled
Abstract: No abstract text available
Text: TND524VS Ordering number : EN9053 SANYO Semiconductors DATA SHEET TND524VS ExPD Excellent Power Device Single-phase High Side Drive Application Features • • • • Single-phase high side drive Allows simplified configuration of driver circuit Fully compatible input to LSTTL/CMOS
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EN9053
TND524VS
170mA
340mA
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vec8
Abstract: No abstract text available
Text: SBS811 Ordering number : EN8254A SANYO Semiconductors DATA SHEET SBS811 Schottky Barrier Diode 30V, 2.0A Rectifier Applications • High frequency rectification switching regulators, converters, choppers Features • • Small Switching noise Low forward voltage (IF=2A, VF max=0.40V)
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EN8254A
SBS811
vec8
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CPH5862
Abstract: No abstract text available
Text: CPH5862 注文コード No. N A 0 4 6 4 三洋半導体データシート N CPH5862 MOSFET : N チャネル MOS 型シリコン電界効果トランジスタ SBD : ショットキバリアダイオード 汎用スイッチングデバイス 特長 ・DC / DC コンバータ用。
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CPH5862
1000mm2
82907PE
TC-00000873
A0464-1/5
VG0383
ID00384
A0464-4/5
CPH5862
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA1504A SBS822 Schottky Barrier Diode http://onsemi.com 20V, 1A, Low VF Dual MCPH5 Applications • High frequency rectification switching regulators, converters, choppers . Features • • • • Low forward voltage (IF=0.5A, VF max=0.39V) (IF=1A, VF max=0.46V).
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ENA1504A
SBS822
A1504-4/4
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TA-2054
Abstract: 5C22 NTE 2054 D2005 FTD2005
Text: Ordering number:ENN6429 N-Channel Silicon MOSFET FTD2005 Ultrahigh-Speed Switching Applications Package Dimensions • Low ON resistance. · 2.5V drive. · Mounting height 1.1mm. · Composite type, facilitating high-density mounting. unit:mm 2155A [FTD2005]
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ENN6429
FTD2005
FTD2005]
TA-2054
5C22
NTE 2054
D2005
FTD2005
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tA 1507
Abstract: TA-1507 ta1507 FSS207
Text: Ordering number:ENN6346 N-Channel Silicon MOSFET FSS207 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · 2.5V drive. unit:mm 2116 [FSS207] 5 4 1 : Source 2 : Source 0.2 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain
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ENN6346
FSS207
FSS207]
tA 1507
TA-1507
ta1507
FSS207
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D2017
Abstract: TA-2502 FTD2017
Text: Ordering number:ENN6361 N-Channel Silicon MOSFET FTD2017 Load Switching Applications Package Dimensions • Low ON resistance. · 2.5V drive. · Mounting height 1.1mm. · Composite type, facilitating high-density mounting. unit:mm 2155A [FTD2017] 3.0 0.65 0.425
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ENN6361
FTD2017
FTD2017]
D2017
TA-2502
FTD2017
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FSS232
Abstract: S232
Text: Ordering number:ENN6359 N-Channel Silicon MOSFET FSS232 Load Switching Applications Features Package Dimensions • Low ON resistance. · 4V drive. unit:mm 2116 [FSS232] 5 4 1 : Source 2 : Source 0.2 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain
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ENN6359
FSS232
FSS232]
FSS232
S232
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MS2610
Abstract: D8002 IT07079 7752-2 FTD8002
Text: FTD8002 注文コード No. N 7 7 5 2 三洋半導体データシート N FTD8002 N チャネル MOS 形シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・超低オン抵抗。 ・2.5V 駆動。 ・実装高 1.1mm。
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FTD8002
1000mm2
1000mm2
IT07078
IT07079
IT07080
IT07081
MS2610
D8002
IT07079
7752-2
FTD8002
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77532
Abstract: D8004 FTD8004
Text: FTD8004 注文コード No. N 7 7 5 3 三洋半導体データシート N FTD8004 N チャネル MOS 形シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。 ・2.5V 駆動。 ・実装高 1.1mm。 ・ドレイン共通で LIB 用 S / W に最適。
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FTD8004
1000mm2
1000mm2
IT07090
IT07091
IT07092
IT07093
77532
D8004
FTD8004
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FTS2005
Abstract: S2005
Text: Ordering number:ENN6347 N-Channel Silicon MOSFET FTS2005 Liquid Crystal Display Backlight Drive Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Mounting height 1.1mm. unit:mm 2166 [FTS2005] 0.65 0.425 5 4.5 6.4
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ENN6347
FTS2005
FTS2005]
FTS2005
S2005
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FTS1001
Abstract: S1001 MOSFET marking YF
Text: Ordering number:ENN6093A P-Channel Silicon MOSFET FTS1001 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · 2.5V drive. · Mounting height 1.1mm. unit:mm 2147A [FTS1001] 0.65 5 4 Specifications 0.25 0.95 1 1 : Drain
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ENN6093A
FTS1001
FTS1001]
FTS1001
S1001
MOSFET marking YF
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is s106 diode
Abstract: FSS106 S106
Text: Ordering number:ENN6476 P-Channel Silicon MOSFET FSS106 DC/DC Converter Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2116 [FSS106] 5 4 0.2 1.8max 1 6.0 4.4 0.3 8 0.595 Specifications 1.27
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ENN6476
FSS106
FSS106]
is s106 diode
FSS106
S106
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FW233
Abstract: W233
Text: Ordering number : ENN6391 SANYO Semiconductors DATA SHEET FW233 N-Channel Silicon MOSFET Load Switching Applications Features • Low ON resistance. · 4V drive. Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage
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ENN6391
FW233
1000mm2
FW233
W233
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A1930
Abstract: FTD2017C ENA1930 FTD2017
Text: FTD2017C Ordering number : ENA1930 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET FTD2017C General-Purpose Switching Device Applications Features • • • Low ON-resistance Mount heigt 1.1mm Drain common specifications • • • 2.5V drive Composite type, facilitating high-density mounting
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ENA1930
FTD2017C
PW10s,
1000mm2
A1930-4/4
A1930
FTD2017C
ENA1930
FTD2017
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"clip bonding"
Abstract: 2SC6022 ECH8101 ECH8102
Text: T OP I C S 新 版 产 品 话 题 2009年7月17日 推出 低损失双极晶体管: ECH系列 利于配套产品的热对策与小型化! Flat Panel Display 小型封装, Power Loss 55%低减*1 太阳电池 Power Conditioner *1: 截止2009年7月17日, 限于SOT23级别
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ECH8101,
ECH8102
ECH8201,
ECH8202
ECH8901
2009717SOT23
O-252
O-252
OT-23
ECH8202
"clip bonding"
2SC6022
ECH8101
ECH8102
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA1504A SBS822 Schottky Barrier Diode http://onsemi.com 20V, 1A, Low VF Dual MCPH5 Applications • High frequency rectification switching regulators, converters, choppers . Features • • • • Low forward voltage (IF=0.5A, VF max=0.39V) (IF=1A, VF max=0.46V).
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ENA1504A
SBS822
A1504-4/4
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Untitled
Abstract: No abstract text available
Text: Ordering number: ENN7004 P-Channel Silicon MOSFET FTS1012 Load Switching Applications Package Dimensions Features • Low ON-resistance. • 4.0V drive. unit : mm 2147 A • M ounting height 1.1mm. [FTS1012] ,0.425 3.0 QM 'J in' Drain Source Source Gate Drain
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ENN7004
FTS1012
FTS1012]
1000mm2X0ctric
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