1000V BIPOLAR TRANSISTOR Search Results

CT60AM-20

Abstract: CT60AM20 TRANSISTOR ct60am resonant inverter CT60AM
Contextual Info: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT60AM-20 RESONANT INVERTER USE CT60AM-20 • VCES . 1000V • 1C . •• ■60A • Integrated Fast Recovery Diode

transistor 3005

Abstract: transistor 3005 2 CT60AM-20 transistor FS 20 SM L 3005 TRANSISTOR CT60AM20 transistor TO-220 Outline Dimensions K 4005 transistor resonant inverter ct FS 8201
Contextual Info: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT60AM-20 RESONANT INVERTER USE OUTLINE DRAWING Dimensions in mm 5 20MAX. >3.2 «— © 0.5 5.45 5.45 • V ces . 1000V © © © GATE COLLECTOR EMITTER

Contextual Info: FGA50N100BNT tm 1000V, 50A NPT-Trench IGBT CO-PAK Features General Description • • • • Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche

induction heater

Abstract: FGA50N100BNT FGA50N100BNTTU fairchild induction heater low frequency induction heater igbt 1000v 10A 30 kw induction heater
Contextual Info: FGA50N100BNT tm 1000V, 50A NPT-Trench IGBT CO-PAK Features General Description • • • • Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche

igbt 1000v 10A

Contextual Info: FGA50N100BNTD2 tm 1000V, 50A NPT-Trench IGBT CO-PAK Features General Description • • • • • Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche

igbt induction cooker

Abstract: induction heating cooker FGA50N100BNTD2 induction cooker circuit with IGBT induction cooker application notes induction cooker fairchild induction cooker fairchild induction heater induction cooker component induction heater
Contextual Info: FGA50N100BNTD2 tm 1000V, 50A NPT-Trench IGBT CO-PAK Features General Description • • • • • Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche

Contextual Info: AP30G100W RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features VCES High speed switching Low Saturation Voltage VCE sat =3.0V@IC=30A Industry Standard TO-3P Package 1000V IC 30A C G C RoHS Compliant E

igbt induction cooker

Abstract: FGA50N100 "induction cooker" circuit induction cooker circuit with IGBT induction heating cooker IC for induction cooker FGA50N100BNTDTU IGBT 600V 30A TO-3P IGBT 1000V 60A BNTD
Contextual Info: FGA50N100BNTD 1000V, 50A NPT-Trench IGBT CO-PAK General Description Features Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. These devices are well suited for

igbt induction cooker

Abstract: induction cooker igbt 1000v 30a induction cooker circuit with IGBT IGBT 1000V .50A induction heating cooker fairchild induction cooker igbt for induction cooker FGA50N100BNTDTU IGBT 60A
Contextual Info: tm FGA50N100BNTD 1000V, 50A NPT-Trench IGBT CO-PAK General Description Features Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. These devices are well suited for

fairchild induction cooker

Abstract: induction cooker circuit with IGBT igbt induction cooker FGA50N100BNTD FGA50N100BNTDTU igbt 1000v 30a induction cooker IC for induction cooker FGA50N100BN
Contextual Info: FGA50N100BNTD 1000V, 50A NPT-Trench IGBT CO-PAK General Description Features Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. These devices are well suited for

induction cooker application notes

Contextual Info: tm FGA50N100BNTD 1000V, 50A NPT-Trench IGBT CO-PAK General Description Features Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. These devices are well suited for

Contextual Info: SEMELAB PLC hGE D • Û1331Û7 OOODbfiH bH3 MOSPOWER4 IGBT = rr= SEM E LAB SML45G100BN 1000V 45A N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol All Ratings: Tc = 25°C unless otherwise specified. Parameter

Contextual Info: Advanced Power Electronics Corp. AP30G100W-HF-3 N-Channel Insulated Gate Bipolar Power Transistor VCES 1000V High Speed Switching C Low Saturation Voltage 30A IC Typical V CE sat = 3.0V at IC=30A G Industry-standard TO-3P C C RoHS-compliant, halogen-free

transistor TO-3P Outline Dimensions

Contextual Info: AP30G100W RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features VCES 1000V 30A IC ▼ High speed switching ▼ Low Saturation Voltage VCE sat =3.0V@IC=30A ▼ Industry Standard TO-3P Package C G G C ▼ RoHS Compliant

transistor BF 502

Abstract: 502 TJ
Contextual Info: — SEMELAB PLC bOE D = p r= “ ill“ • 8133187 / /N^ i^ -P ack QDD0C1D4 0 2 3 ■ SI1LB MOS POWER BFNk| 4 IG B T T 3 V i \ SEME LAB_ SML200G100BFN 1000V 200A N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR

GT250101

Abstract: MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9
Contextual Info: Insulated ìate Bipolar Transistors (IG BTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a

MG75J2YS40

Abstract: MG100J2YS45 MG50J2YS45 MG150J2YS45 MG300Q1US MG400Q1US11 MG400J2YS40 MG150J2YS40 MG200Q2YS1 MG200J2YS45
Contextual Info: Insulated Gate Bipolar Transistors IGBTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a

APT40GF100BN

Abstract: TO 48 THYRISTOR FAST SWITCHING TRANSISTOR 400 VOLTS
Contextual Info: A D VA NC ED POUER TECHNOLOGY b lE D • D E S TIC I □ OOOfl'iG b3T *A V P A dvanced po w er TECHNOLOGY APT40GF100BN 1000V 40A N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR All Ratings: Tc = 25°C unless otherwise specified.

APT50GF100BN

Abstract: 780L
Contextual Info: ADVANCED POWER TECHNOLOGY LIE D • DeSTIGT OOOOflm 2fiS ■ AVP A dvanced P o w er Te c h n o l o g y APT50GF100BN 1000V 50A POWER MOS IV IGBT N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol All Ratings:

204AA

Contextual Info: SEHELAB PLC bOE D • 0133107 □□□QficJ4 354 ■ S M L B MOS POWER IGBT M il SEM E SML25G100AN LAB 1000V 4 25A N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol ^CES All Ratings: Tc = 25°C unless otherwise specified.

sml40g100an

Abstract: PIC204
Contextual Info: SEMELAB PLC = ^ bDE P • 6133157 00006^5 = M O S r a s a SEME SflLB_ P O W E R 4 'T - Z ° t - Z ì IG B T SML40G100AN LAB TTT ■ 1000V 40A N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol

transistor GC cd

Contextual Info: A DV A NC ED POWER TECHNOLOGY b lE 0 2 S 7 ti D ,i D GDODflbb 310 HAVP ADVANCED PO W ER Te c h n o lo g y APT45GL100BN 1000V 45A POWER MOS IV IGBT N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol

APT90GF100JN

Contextual Info: A dvanced POWÊDi Te c h n o l o g y * APT90GF100JN 1000V 90A SINGLE DIE ISOTOP PACKAGE ISOTOP I’\JWER m o s iv ®ig b t S Ä " U L Recognized" File No. E145592 S N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS

APT30G100BN

Contextual Info: ADVANCES POKER TECHNOLOGY blE • 02S7*lQci ODOO'ÌQM TSM M A V P A d v a n ced po w er Te c h n o l o g y 9 APT30G100BN 1000V 30A POWER MOS 1V IGBT N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol