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    MG300Q1US Price and Stock

    Toshiba America Electronic Components MG300Q1US42

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics MG300Q1US42 175 1
    • 1 $120
    • 10 $110.76
    • 100 $98.4
    • 1000 $98.4
    • 10000 $98.4
    		Buy Now
    Quest Components MG300Q1US42 140
    • 1 $130
    • 10 $130
    • 100 $105
    • 1000 $105
    • 10000 $105
    		Buy Now

    Toshiba America Electronic Components MG300Q1US41

    300A, 1200V, N-CHANNEL IGBT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components MG300Q1US41 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    MG300Q1US Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MG300Q1US1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG300Q1US1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG300Q1US11 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG300Q1US11 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG300Q1US11 Toshiba V(ces): 1200V V(ges): ±20V 2000W insulated gate bipolar transistor. For high power switching and motor control applications Scan PDF
    MG300Q1US2 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG300Q1US2 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG300Q1US21 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG300Q1US21 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG300Q1US41 Toshiba TRANS IGBT MODULE N-CH 1200V 300A 4(2-109A4A) Original PDF
    MG300Q1US41 Toshiba Silicon N-channel IGBT GTR module for high power switching, motor control applications Original PDF
    MG300Q1US41 Toshiba GTR Module Silicon N Channel IGBT Scan PDF
    MG300Q1US41 Toshiba GTR Module - Silicon N-Channel IGBT Scan PDF
    MG300Q1US41(AC:G) Toshiba TRANS IGBT MODULE N-CH 1200V 300A 4(2-109A4A) Original PDF
    MG300Q1US51 Toshiba TRANS IGBT MODULE N-CH 1200V 400A 4(2-109F1A) Original PDF
    MG300Q1US51 Toshiba Silicon N-channel IGBT GTR module for high power switching, motor control applications Original PDF
    MG300Q1US51 Toshiba GTR Module Silicon N Channel IGBT Scan PDF
    MG300Q1US51 Toshiba GTR Module - Silicon N-Channel IGBT Scan PDF

    MG300Q1US Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MG300Q1US41

    Abstract: No abstract text available
    Text: MG300Q1US41 TOSHIBA GTR Module Silicon N Channel IGBT MG300Q1US41 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.5µs Max. trr = 0.5µs (Max.) Low saturation voltage : VCE(sat) = 4.0V (Max.)


    Original     		PDF MG300Q1US41 2-109A4A MG300Q1US41

    Untitled

    Abstract: No abstract text available
    Text: MG300Q1US51 TOSHIBA GTR Module Silicon N Channel IGBT MG300Q1US51 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.3µs Max. @Inductive load l Low saturation voltage : VCE (sat) = 3.6V (Max.)


    Original     		PDF MG300Q1US51 2-109F1A

    MG300Q1US41

    Abstract: No abstract text available
    Text: MG300Q1US41 TOSHIBA GTR Module Silicon N Channel IGBT MG300Q1US41 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.5µs Max. trr = 0.5µs (Max.) l Low saturation voltage : VCE(sat) = 4.0V (Max.)


    Original     		PDF MG300Q1US41 2-109A4A MG300Q1US41

    mg300* toshiba

    Abstract: MG300Q1US51
    Text: MG300Q1US51 TOSHIBA GTR Module Silicon N Channel IGBT MG300Q1US51 High Power Switching Applications Motor Control Applications Unit: mm 2–M4 2–M6 4– 6.6 0.3 Low saturation voltage : VCE sat = 3.6V (Max.) E G E C 24 0.3 20 0.3 29 0.3 Enhancement-mode


    Original     		PDF MG300Q1US51 2-109F1A mg300* toshiba MG300Q1US51

    MG300Q1US51

    Abstract: 80c400
    Text: MG300Q1US51 TOSHIBA GTR Module Silicon N Channel IGBT MG300Q1US51 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3µs Max. @Inductive load Low saturation voltage : VCE (sat) = 3.6V (Max.) Enhancement-mode


    Original     		PDF MG300Q1US51 2-109F1A 2500transportation MG300Q1US51 80c400

    Untitled

    Abstract: No abstract text available
    Text: MG300Q1US51 TOSHIBA GTR Module Silicon N Channel IGBT MG300Q1US51 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3µs Max. @Inductive load Low saturation voltage : VCE (sat) = 3.6V (Max.) Enhancement-mode


    Original     		PDF MG300Q1US51 2-109F1A

    TOSHIBA MG150N2YS40

    Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
    Text: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入


    Original     		PDF 050106DAA1 /SC-70 YTF612 2SK2381 YTF841 2SK2387 YTF442 2SK2149 YTF613 TOSHIBA MG150N2YS40 mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40

    300Q1US41

    Abstract: No abstract text available
    Text: TOSHIBA MG300Q1US41 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300Q1US41 HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf=0.5i«s Max. trr = O.S^s (Max.) Low Saturation Voltage : V cE (sa t) = 4.0V


    OCR Scan     		PDF MG300Q1US41 00A/ius 300Q1US41

    MG300Q1US51

    Abstract: MG300Q1
    Text: T O S H IB A MG300Q1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 3 0 0 Q 1 US51 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed : tf=0.3^s Max. @Induetive Load Low Saturation Voltage : VCE (Sat) =3.6V (Max.)


    OCR Scan     		PDF MG300Q1US51 MG300Q1 2-109F1A MG300Q1US51

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG300Q1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 3 Q Q n 1 u S 51 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf= 0 .3 ^ s Max. Inductive Load • Low Saturation Voltage • V c e (sat) —3.6V (Max.)


    OCR Scan     		PDF MG300Q1US51

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG300Q1US51 TO SH IBA GTR M O D U L E M G 3 SILICON N C H A N N EL IGBT Q 1 U S 5 1 HIGH POW ER SW ITCHING APPLICATIONS M O T O R CONTRO L APPLICATIONS • • H igh Input Impedance H ig h sp eed : tf= 0 .3 /Æ Max. Inductive Load Low Saturation Voltage


    OCR Scan     		PDF MG300Q1US51 1256C VCE25i

    mg30

    Abstract: MG300Q1US51 P channel 600v 300a IGBT
    Text: T O S H IB A MG300Q1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 3 0 0 Q 1 US51 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed : tf=0.3/*s Max. @Induetive Load Low Saturation Voltage : VCE (gat) =3.6V (Max.)


    OCR Scan     		PDF MG300Q1US51 MG300Q1 2-109F1A mg30 MG300Q1US51 P channel 600v 300a IGBT

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A MG300Q1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G300Q 1 US51 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed : tf=0.3/*s Max. @Inductive Load Low Saturation Voltage : VCE (sat) = 3.6V (Max.)


    OCR Scan     		PDF MG300Q1US51 G300Q TjS125

    MG300Q1US11

    Abstract: GE-540 GE-54 221D
    Text: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG300Q1US11 GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features • High input im pedance • High speed: tf = 1 .O^s Max. • Low saturation voltage: = 0 .5 n s (Max.)


    OCR Scan     		PDF MG300Q1US11 TDT72SD PW03960796 MG300Q1US11 GE-540 GE-54 221D

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG300Q1US41 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 3 0 0 Q 1 US41 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf=0.5,«s Max. trr = O . o / ' S (Max.) Low Saturation Voltage : V Q E(sat) = 4.0V


    OCR Scan     		PDF MG300Q1US41

    Untitled

    Abstract: No abstract text available
    Text: MG300Q1US41 HIGH P O W E R SW IT C H IN G A PPLIC A TIO N S. M O TO R C O NTRO L A PPLIC A TIO N S. • High I n p u l Impedance • High Speed : tf= 0 .5 //s M a x . • Low S a tu r a tio n Voltage : V £ E ( s a t) = 4 . 0 V t rr = 0.5//s(Max.) (Max.)


    OCR Scan     		PDF MG300Q1US41

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG300Q1US41 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 3 Q Q n 1 il <; a. 1 M r • ■ HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf=0.5//s Max. trr = 0.5//s (Max.) • Low Saturation Voltage : V ç E (ç a t) = 4.0V


    OCR Scan     		PDF MG300Q1US41 JG300Q1US41

    MG300Q1US1

    Abstract: IGBT MG300Q1US1 mg300q1us
    Text: GTR MODULL SILICON N CHANNEL IGBT MG300Q1US1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • High Input Impedance ■ High Speed: tf=0. 5jJs Max. trr=0.5ys(Max.) • Low Saturation Voltage: Vc]?(sat)=4 .0V(Max. ) • Enhancement-Mode • The Electrodes are Isolated from Case.


    OCR Scan     		PDF MG300Q1US1 MG300Q1US1 IGBT MG300Q1US1 mg300q1us

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG300Q1US41 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300Q1US41 HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf=0.5i«s Max. trr = O.S^s (Max.) Low Saturation Voltage : V cE (sa t) = 4.0V


    OCR Scan     		PDF MG300Q1US41 Colleetor-Emi200 00A/ius

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A MG300Q1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 3 0 0 Q 1 US51 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf= 0.3/*s Max. @Induetive Load • Low Saturation Voltage . T


    OCR Scan     		PDF MG300Q1US51

    S5J53

    Abstract: MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753
    Text: TOSHIBA [2 ] Introduction [ 2 ] Introduction 1. 600-V Third Generation IGBTs • • • M iniaturization technologies have improved the trade-off between switching speed and saturation voltage V qe (sat = 2-l v Ctyp.) tf = 0.2 pis (typ.). The therm al resistance has been cut for added reliability by using a high heat conduction


    OCR Scan     		PDF 200-V 400J101H MG75J1BS11 MG25J1B511 MG50J1BS11 MG100J1BS11 MG150J1BS11 MG25Q1BS11 MG50Q1BS11 MG75Q1BS11 S5J53 MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753

    GT250101

    Abstract: MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9
    Text: Insulated ìate Bipolar Transistors (IG BTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a


    OCR Scan     		PDF 2-99A1A 2-99B1A GT250101 MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9

    MG15J6ES40

    Abstract: MG150Q2YS40 MG300J2YS50 MG300Q2YS40 MG75Q2YS40 MG25Q2YS40 MG200Q2YS40 MG300Q2YS4
    Text: .2 Short-Circuit Guarantee General conditions Tim e b etw een short-circuits > 1 A llowed n u m b er o f short-circuits 100 Junction tem peratu re before short-circuit < 125 s °C Electrical Conditions for 600 V Types T ype No. Rg min / £2 VCE/V VCEP/V MG15J6ES40


    OCR Scan     		PDF MG15J6ES40 MG2SJ6KS40 MG50J2YS50 MG50J6KS50 MG75J2YS50 MG75J6KS50 100J2YS50 MG100J6KS50 MG150J2YS50 MG200J2YS50 MG150Q2YS40 MG300J2YS50 MG300Q2YS40 MG75Q2YS40 MG25Q2YS40 MG200Q2YS40 MG300Q2YS4

    MG40001US41

    Abstract: MG806ES42 MG15J6ES40 MG75J2YS50 MG100Q2YS42 mg300q1us41 MG50Q2YS40 mg150j1 MG100J2YS50
    Text: Promotion Line-up Discretes s s i s « I I 1 S 1 * III » 5-5 -OIlfOh- I1! S3 « 13If*Sm * ¡1 If «C * sSagafS & S5 é<5£ 2* If o^ • Ifii O£K D 3 ilif £ § Iti o p I| § 1 5«SS is y— § 8 I 1 •Sf11 4 î $ Ì.W « »a N n 1M 1« m us YS MG40J2YS50


    OCR Scan     		PDF MG400J1US51 MG800J1US51 MG300J1US51 MG40J2YS50 MG75J2YS50 MG100J2YS50 MG150J2YS50 MG200J2YS50 MG400J2VS50 MG2SJ6ES40 MG40001US41 MG806ES42 MG15J6ES40 MG75J2YS50 MG100Q2YS42 mg300q1us41 MG50Q2YS40 mg150j1 MG100J2YS50