1000V POWER MOSFET RELIABILITY REPORT Search Results

max5062

Abstract: MAX5064
Contextual Info: MAX5064 RELIABILITY REPORT FOR MAX5064BATC+T PLASTIC ENCAPSULATED DEVICES February 15, 2011 MAXIM INTEGRATED PRODUCTS 120 SAN GABRIEL DR. SUNNYVALE, CA 94086 Approved by Richard Aburano Quality Assurance Manager, Reliability Operations Maxim Integrated Products. All rights reserved.

MAX1044ESA

Abstract: C9016
Contextual Info: MAX1044 RELIABILITY REPORT FOR MAX1044ESA+ PLASTIC ENCAPSULATED DEVICES March 4, 2011 MAXIM INTEGRATED PRODUCTS 120 SAN GABRIEL DR. SUNNYVALE, CA 94086 Approved by Sokhom Chum Quality Assurance Reliability Engineer Maxim Integrated Products. All rights reserved.

MAX5976

Abstract: MAX5976BETE
Contextual Info: MAX5976 RELIABILITY REPORT FOR MAX5976AETE+/ MAX5976BETE+ PLASTIC ENCAPSULATED DEVICES June 10, 2011 MAXIM INTEGRATED PRODUCTS 120 SAN GABRIEL DR. SUNNYVALE, CA 94086 Approved by Richard Aburano Quality Assurance Manager, Reliability Engineering Maxim Integrated Products. All rights reserved.

MAX894L

Abstract: MAX894LESA NSO package mosfet reliability testing report
Contextual Info: MAX894LESA Rev. A RELIABILITY REPORT FOR MAX894LESA PLASTIC ENCAPSULATED DEVICES February 17, 2004 MAXIM INTEGRATED PRODUCTS 120 SAN GABRIEL DR. SUNNYVALE, CA 94086 Written by Reviewed by Jim Pedicord Quality Assurance Reliability Lab Manager Bryan J. Preeshl

calibration pot in process industry

Contextual Info: MAX1848ExA Rev. B RELIABILITY REPORT FOR MAX1848ExA PLASTIC ENCAPSULATED DEVICES November 25, 2002 MAXIM INTEGRATED PRODUCTS 120 SAN GABRIEL DR. SUNNYVALE, CA 94086 Written by Reviewed by Jim Pedicord Quality Assurance Reliability Lab Manager Bryan J. Preeshl

Quasi-resonant Converter for induction cooker

Abstract: IGBT 60A spice model 1000V igbt dc to dc buck converter CAR IGNITION WITH IGBTS 10 kw schematic induction heating Quasi-resonant Converter induction cooker applications FQPF18N50 1 kw schematic induction heating 600V igbt dc to dc buck converter pwm igbt based ac-dc converter
Contextual Info: The Power Franchise Summer - 2002 FEATURED IN THIS ISSUE 1200V Stealth fast/soft recovery avalanche energy rated diodes . . . Page 4 Trench MOSFETs for 42V automotive applications . . . Page 5 Bottomless SO-8 Package PowerTrench family . . . Page 6 .And More! . . . Page 7 and 8

ZVT uc3875

Abstract: 500w Full bridge transformer UC3875 ZVS design APT9804 unitrode manual sem-900 phase shifted zero voltage SEM900 UC3875 ZVT full bridge pwm controller uc3875 Bill Andreycak
Contextual Info: APT9804 Ò APPLICATION NOTE By: Kenneth Dierberger Richard Redl Leo Saro High-Voltage MOSFET Behavior in Soft-Switching Converters: Analysis and Reliability Improvements Presented at Intelec ‘98 San Francisco Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating

FAG 32 diode

Abstract: FAG 50 diode diode FAG 50 FAG40 irfag42 1000V power MOSFET reliability report G-263
Contextual Info: HE 0 I 4055455 GOGTZÖL fl | INTERNATIONAL Data Sheet No. PD-9.575A RECTIFIER INTERNATIONAL RECTIFIER IO R T -3 9 -1 3 REPETITIVE AVALANCHE AND dv/dt RATED IRFAG40 IRFAG4S HEXFET TRANSISTORS N-CHANNEL Product Summary 1000 Volt, 3.5 Ohm HEXFET TO-204AA TO-3 Hermetic Package

ZVT uc3875

Abstract: uc3875 500w UC3875 phase shifted zero voltage ZVT full bridge pwm controller uc3875 Unitrode uc3875 300 zvs UC3875 ZVS design Designing a Phase Shifted Zero Voltage Transition ZVT Power Converter 500w Full bridge transformer block diagram explanation of uc3875
Contextual Info: Application Note APT9804 Rev B February 20, 2004 High-Voltage MOSFET Behavior in Soft-Switching Converters: Analysis and Reliability Improvements By Kenneth Dierberger Richard Redl Leo Saro Presented at Intelec ‘98 San Francisco Circuit diagrams external to APT products are included as a means of illustrating typical applications. Consequently,

c624 DIODE

Abstract: c619 DIODE diode c624 c617 DIODE c619 IRFPG42 c618 diode IRFPG40 C620 diode irfpg
Contextual Info: HE 0 I MflSSMSE QODâûbô 3 | INTERNATIONAL Data Sheet No. PD-9.576A RECTIFIER INTERNATIONAL RECTIFIER I Ö R REPETITIVE AVALANCHE AND dv/dt RATED HEXFETTRANSISTORS IRFPG40 IRFPG42 N-CHANNEL 1000 Volt, 3.5 Ohm HEXFET TO-247AC TO-3P Plastic Package Product Summary

T4 DIODE

Abstract: irfag52
Contextual Info: HE 0 I 4âSS4S3 000^2=14 7 | Data Sheet No. PD-9.582A INTERNATIONAL R E C T I F I E R . T-39-13 INTERNATIONAL RECTIFIER I O R REPETITIVE AVALANCHE AND dv/dt RATED IRFAG50 HEXFET TRANSISTORS IRFAG5S N-CHANNEL 1000 Volt, 2.0 Ohm HEXFET TO-204AA TO-3 Hermetic Package

c628 DIODE

Abstract: diode c626 DIODE c629 diode c631 c632 DIODE c630 diode 3g50 irf 2030 IRFPG52 diode c630
Contextual Info: INTERNATIONAL RECTIFIER HE D I 4flSS4SE Data Sheet No. PD-9.543A INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER I 0 R REPETITIVE AVALANCHE AND dv/dt RATED HEXFETTRANSISTORS IRFPG5G IRFPG52 N-CHANNEL Product Summary 1000 Volt, 2.0 Ohm HEXFET TO-247AC TO-3P Plastic Package

IRS2631D

Abstract: IRS2631 12V dynamo micro inverter IRS2631DJ IRS26310D IRS26310DJPBF "micro inverter" 600V HVIC Three phase inverter mosfet Diagram
Contextual Info: IRS26310DJPBF – High-Voltage 3-Phase Gate Driver IC with DC Bus Over-Voltage Protection HVIC / MOTOR CONTROL IRS26310D typical application connection IRS26310DJPbF DCBUS + High-Voltage 3-Phase Gate Driver IC with DC Bus Over-Voltage Protection THE POWER MANAGEMENT LEADER

IXAN0015

Abstract: 0015 GE SCR Manual Design pure sine wave inverter using transformer contraves modern and radar transmitters doppler radar circuit for speed sensing contraves drive X-band doppler radar module diagram radar circuit
Contextual Info: Home < IEEE PEDS 2001 - INDONESIA IXAN0015 Use of BiMOSFETs in Modern Radar Transmitters Ralph E. Locher and Abhijit D. Pathak, Member, IEEE g reduced by irradiation. The end result is a device, which can be optimized for either high frequency or low frequency

kaschke flyback transformer

Abstract: diode AE 89A EF16 TRANSFORMER Self-Oscillating Flyback Converters kaschke bobbins LNK363 kaschke ferrite material LNK363PN Transformer kaschke 555 ic is output 230v ac
Contextual Info: Title Specification Engineering Prototype Report for ADAK-89A 2.88W Converter Using LNK363PN LinkSwitch -XT 85–265 VAC Input, 12 V, 240 mA, 2.88W Output Application Evaluation Board for LNK363PN Author David Gale Document Number ADAK-89A Date 13th November 2006

inverter overcurrent protection

Abstract: 12V dynamo micro inverter washing machine motor control circuit diagram washing machine motor controller diagram IRS26320 3 phase motor inverters circuit diagram igbt 12v dc motor speed controller using igbt pwm dynamo electronics
Contextual Info: IRS26320JPbF – High-Voltage 3-Phase Gate Driver IC with DC Bus Over-voltage Protection and Emergency Supply Backup IRS26320JPbF Typical Application Connection + HVIC / MOTOR CONTROL IRS26320JPbF DCBUS High-Voltage 3-Phase Gate Driver IC with DC Bus Over-Voltage Protection and Emergency Supply Backup

MTN7002ZHS3

Abstract: T1091 17025 mosfet reliability testing report On semiconductor power MOSFET reliability report MTN7 1000V power MOSFET reliability report marking no19 sot-23
Contextual Info: CYStech Electronics Corp. Spec. No. : C320S3 Issued Date : 2007.11.06 Revised Date : 2008.01.25 Page No. : 1/7 N-CHANNEL MOSFET MTN7002ZHS3 Description The MTN7002ZHS3 is a N-channel enhancement-mode MOSFET. Features • Low on-resistance • High ESD • High speed switching

1000V P-channel MOSFET

Abstract: auirf9952q
Contextual Info: AUTOMOTIVE GRADE PD - 97647 AUIRF9952Q HEXFET Power MOSFET Features l l l l l l l l l l Advanced Planar Technology Low On-Resistance Dual N and P Channel MOSFET Dynamic dV/dT Rating 150°C Operating Temperature Fast Switching Full Avalanche Rated Repetitive Avalanche Allowed up to

AUIRF7675M2TR

Abstract: 200 W CLASS D AUDIO AMPLIFIER AUIRF7675M2TR1
Contextual Info: PD -97552 AUTOMOTIVE GRADE • • • • • • • • • • • Advanced Process Technology Optimized for Class D Audio Amplifier Applications Low Rds on for Improved Efficiency Low Qg for Better THD and Improved Efficiency Low Qrr for Better THD and Lower EMI

Contextual Info: AUTOMOTIVE GRADE PD - 97647 AUIRF9952Q HEXFET Power MOSFET Features l l l l l l l l l l Advanced Planar Technology Low On-Resistance Dual N and P Channel MOSFET Dynamic dV/dT Rating 150°C Operating Temperature Fast Switching Full Avalanche Rated Repetitive Avalanche Allowed up to

Contextual Info: PD -97552 AUTOMOTIVE GRADE • • • • • • • • • • • Advanced Process Technology Optimized for Class D Audio Amplifier Applications Low Rds on for Improved Efficiency Low Qg for Better THD and Improved Efficiency Low Qrr for Better THD and Lower EMI

Contextual Info: < Silicon RF Power Modules > RA33H1516M1 RoHS Compliance, 154-164MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for 12.5volt mobile radios that operate in the 154- to 164MHz range. The battery can be connected directly to the drain of the

9544 transistor

Abstract: TRANSISTOR 9642 IRG4PC50U irg4ph50ud igbt failure IRG4PC40UD2 HTGB IRGPH60UD2 IRGBC20FD rectifier IGBT
Contextual Info: Quarterly Reliability Report for T0247 / T0220 Products Manufactured at IRGB IGBT / CoPack ISSUE.3. October 1997 IGBT / CoPack Quarterly Reliability Report Page 1 of 35 Contents 1 Introduction 2 Reliability Information 3 Environmental Test Results 4 Environmental Test Conditions / Schematics

TNY277PN

Abstract: capacitor 33uF 400V TNY277 TNY276 capacitor 1000uf 25v ADAK-91A Pi transformer design tech TNY276 APPLICATION NOTE tny277pn 1 230V AC primary to 12V, 3A secondary transformer
Contextual Info: Title Engineering Prototype Report for ADAK-91A 8W Converter Using TNY277PN TnySwitch -III Specification 85–265 VAC Input, 12 V, 666 mA, 8W Output Application Evaluation Board for TNY277PN Author David Gale Document Number ADAK-91A Date 13th November 2006