HTGB Search Results

HTGB

Contextual Info: AOS Semiconductor Product Reliability Report AO3404/AO3404L, rev C Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: 408 830-9742 www.aosmd.com Feb 16, 2006 1 This AOS product reliability report summarizes the qualification result for AO3404. Accelerated

AO3404AL

Contextual Info: AOS Semiconductor Product Reliability Report AO3404A/AO3404AL, rev A Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: 408 830-9742 www.aosmd.com May 28, 2008 1 This AOS product reliability report summarizes the qualification result for AO3404A. Accelerated

AO4800B

Contextual Info: AOS Semiconductor Product Reliability Report AO4800B/AO4800BL, rev A Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: 408 830-9742 www.aosmd.com Oct 15, 2007 1 This AOS product reliability report summarizes the qualification result for AO4800B. Accelerated

SEC540

Contextual Info: AOS Semiconductor Product Reliability Report AO3435/AO3435L, rev A Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: 408 830-9742 www.aosmd.com 1 This AOS product reliability report summarizes the qualification result for AO3435. Accelerated

JESD22-A108

Abstract: JESD22*108
Contextual Info: AOS Semiconductor Product Reliability Report AO3421E, rev A Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc www.aosmd.com This AOS product reliability report summarizes the qualification result for AO3421E. Accelerated environmental tests are performed on a specific sample size, and then followed

AO4807

Contextual Info: AOS Semiconductor Product Reliability Report AO4807/AO4807L, rev A Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: 408 830-9742 www.aosmd.com May 15, 2006 1 This AOS product reliability report summarizes the qualification result for AO4807. Accelerated

ao4800

Contextual Info: AOS Semiconductor Product Reliability Report AO4800/AO4800L, rev A Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: 408 830-9742 www.aosmd.com Jul 14, 2005 1 This AOS product reliability report summarizes the qualification result for AO4800. Accelerated

HTGB

Abstract: JEDEC htrb HTRB
Contextual Info: AOS Semiconductor Product Reliability Report AO4611/AO4611L, rev A Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: 408 830-9742 www.aosmd.com This AOS product reliability report summarizes the qualification result for AO4611.

Contextual Info: AOS Semiconductor Product Reliability Report AO3420/AO3420L, rev B Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: 408 830-9742 www.aosmd.com Mar 20, 2006 1 This AOS product reliability report summarizes the qualification result for AO3420. Accelerated

IRF460

Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Contextual Info: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,

Contextual Info: AOS Semiconductor Reliability Report AOT10B60D, 600V, 10A Alpha IGBT TM with Diode Rev. A ALPHA & OMEGA Semiconductor, Inc www.aosmd.com AOS Reliability Report 1 TM The Alpha IGBT line of products offers best-in-class performance in conduction and switching

JESD22-A119

Abstract: JESD22-A103 JESD22-B106 a103 transistor JESD22-A108 a102 transistor transistor a102 JESD22-A104 Receiver/sampling phase detector A103
Contextual Info: Diodes Zetex Semiconductors Limited Zetex Technology Park, Chadderton, Oldham, OL9 9LL, United Kingdom. Telephone No.: +44 0 161 622 4533 Quality Dept Fax No: +44 (0)161 622 4543 E-mail:david_fitton@eu.diodes.com Internet: http://www.zetex.com Date: 6/10/2008

TRANSISTOR 9642

Abstract: 9544 transistor T0247 package what is fast IGBT transistor IRG4PC50U Equivalent transistors for IRG4PC50U IRG4BC20FD 600V 16 TO220 IRGPC40U irg4ph50ud IRGB440U
Contextual Info: Quarterly Reliability Report for T0247 / T0220 Products Manufactured at IRGB IGBT / CoPack ISSUE.3. October 1997 IGBT / CoPack Quarterly Reliability Report Page 1 of 35 Contents 1 Introduction 2 Reliability Information 3 Environmental Test Results 4 Environmental Test Conditions / Schematics

MSC2404

Abstract: MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP RF Amplifier Transistor Surface Mount MSA1022-CT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage VCBO – 30 Vdc Collector–Emitter Voltage

Mosfet

Contextual Info: SSF7505 75V N-Channel MOSFET Main Product Characteristics VDSS 75V RDS on 3.3mohm(typ.) ID 170A TO-220 Marking and Pin Schematic Diagram Assignment Features and Benefits   Advanced trench MOSFET process technology Special designed for PWM, load switching and

Mosfet

Abstract: SSF2122E
Contextual Info: SSF2122E 20V Dual N-Channel MOSFET Main Product Characteristics VDSS 20V RDS on 15.2mohm(typ.) ID 7A ① DFN 3x3-8L Marking and Pin Schematic Diagram Assignment Features and Benefits   Advanced MOSFET process technology Special designed for PWM, load switching and

Mosfet

Abstract: SSF3324 MOSFET N-Channel 1a vgs 1.2v sot-23
Contextual Info: SSF3324 30V N-Channel MOSFET Main Product Characteristics VDSS 30V RDS on 26.5mohm(typ.) ID 5.8A ① SOT23 Marking and Pin Schematic Diagram Assignment Features and Benefits   Advanced trench MOSFET process technology Special designed for PWM, load switching and

Mosfet

Abstract: SSF2129H3
Contextual Info: SSF2129H3 20V Dual P-Channel MOSFET Main Product Characteristics VDSS -20V RDS on 21mΩ (typ.) ID -6.0A D1 S1 Features and Benefits     G2 G1 SOP-8   D2 Marking and Pin S2 Schematic Diagram Assignment Advanced MOSFET process technology Special designed for PWM, load switching and

Mosfet

Abstract: SSF3051G7
Contextual Info: SSF3051G7 30V P-Channel MOSFET Main Product Characteristics D RDS on 3051G7 VDSS -30V 45mohm(typ.) G S ID -4A Marking and Pin SOT23-6 Assignment Schematic Diagram Features and Benefits:       Advanced trench MOSFET process technology Special designed for buttery protection, load

Mosfet

Abstract: SSF2N60F mosfet 600V 100A
Contextual Info: SSF2N60F 600V N-Channel MOSFET Main Product Characteristics VDSS 600V RDS on 3.6ohm(typ.) ID 2A TO220F Marking and Pin Schematic Diagram Assignment Features and Benefits   Advanced MOSFET process technology Special designed for PWM, load switching and

Mosfet

Abstract: SSF20NS60
Contextual Info: SSF20NS60 600V N-Channel MOSFET Main Product Characteristics VDSS 600V RDS on 170mΩ(typ.) ID 20A TO-220 Marking and Pin Schematic Diagram Assignment Features and Benefits  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge

Mosfet

Abstract: SSF11NS65 diode 945
Contextual Info: SSF11NS65 650V N-Channel MOSFET Main Product Characteristics VDSS 650V RDS on 0.36ohm(typ.) ID 11A Marking and Pin TO-220 Schematic Diagram Assignment Features and Benefits  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge

Mosfet

Abstract: SSF10N60F
Contextual Info: SSF10N60F 600V N-Channel MOSFET Main Product Characteristics VDSS 600V RDS on 0.8ohm(typ.) ID 10A TO220F Schematic Diagram Assignment Features and Benefits   Marking and Pin Advanced trench MOSFET process technology Special designed for PWM, load switching and

Mosfet

Abstract: SSF2N60D2
Contextual Info: SSF2N60D2 600V N-Channel MOSFET Preliminary Main Product Characteristics VDSS 600V RDS on 3.7Ω (typ.) ID 2A TO-252 Marking and Pin Schematic Diagram Assignment Features and Benefits   Advanced MOSFET process technology Special designed for PWM, load switching and