1001E Search Results

DDS-101-010

Abstract: ELS-1001EWA DDS101
Contextual Info: EVERLIGHT ELECTRONICS CO.,LTD. Device Number : DDS-101-010 REV: 1.0 Page: 1/4 1.0" Single Digit Display ELS-1001EWA MODEL NO : █ Features : ECN : █ Package Dimension: ● Industrial Standard Size. ● Low Power Consumption. ● Categorized For Luminous Intensity.

KAF-1001

Contextual Info: DEVICE PERFORMANCE SPECIFICATION Revision 3.0 MTD/PS-0195 April 18, 2008 KODAK KAF-1001E IMAGE SENSOR 1024 H X 1024 (V) FULL-FRAME CCD IMAGE SENSOR TABLE OF CONTENTS Summary Specification . 4

ELB-1001EWA

Contextual Info: EVERLIGHT ELECTRONICS CO.,LTD. DDB-100-029 Device Number : REV: 1.1 Page: 1/5 10 Bar Graph Displays MODEL NO : ELB-1001EWA ECN : █ Features : █ Applications: ● Industrial standard size. ● Audio equipment ● Low power consumption. ● Instrument panels

ELB-1001EWA

Abstract: 100033
Contextual Info: EVERLIGHT ELECTRONICS CO.,LTD. Technical Data Sheet 10 Bar Graph Displays ELB-1001EWA █ Features : ● Industrial standard size. ● Low power consumption. ● Categorized for luminous intensity. ● Pb free █ Descriptions : ● The ELB-1001 series are ten-element

KAF-1401E

Abstract: kodak ccd kaf-140
Contextual Info: KAF-1001E Performance Specification KAF - 1001E 1024 H x 1024(V) Pixel Enhanced Response Full-Frame CCD Image Sensor Performance Specification Eastman Kodak Company Image Sensor Solutions Rochester, New York 14650 Revision 2.0 March 19, 2004 Eastman Kodak Company - Image Sensor Solutions

KAF-1001E

Abstract: KAF-1401E kaf-140 kodak ccd
Contextual Info: KAF-1001E Performance Specification KAF - 1001E 1024 H x 1024(V) Pixel Enhanced Response Full-Frame CCD Image Sensor Performance Specification Eastman Kodak Company Image Sensor Solutions Rochester, New York 14650 Revision 1 February 19, 2001 Eastman Kodak Company – Image Sensor Solutions - Rochester, NY 14650-2010

Contextual Info: HEMT-3301/HEMT-1001 940 nm High Radiant Emitters Datasheet Description Features The HEMT-3301 and HEMT-1001are infrared emitters, using amesa structure GaAs on GaAsinfrared diode, IRED, optimizedfor maximum quantum efficiencyat a peak wavelength of 940 nm.The HEMT-3301 and HEMT-1001emitters

upD23C1001

Contextual Info: ¿/P D 23C 1001E 1 31 ,0 72 x 8 -B IT M A S K -P R O G R A M M A B LE c m o s ro m N E C Electronics Inc. Description Pin Configuration The /1001E is a 131,072-word by 8-bit static ROM fabricated with CMOS silicon-gate technology. Designed to operate from a single -l-5-volt power

KAF-1001E

Abstract: KEK-4H0080-KAF-1001-12-5 4H0080 ccd 1024 kaf-1401E
Contextual Info: DEVICE PERFORMANCE SPECIFICATION Revision 5.0 MTD/PS-0195 April 14, 2010 KODAK KAF-1001E IMAGE SENSOR 1024 H X 1024 (V) FULL-FRAME CCD COLOR IMAGE SENSOR TABLE OF CONTENTS Summary Specification . 4

KAF-1001E

Abstract: microlens KODAK 1001-AAA-CP-B1 KAF-1001-AAA kodak ccd um 11-UV 4H0080
Contextual Info: PRODUCT SUMMARY KODAK KAF-1001E IMAGE SENSOR 1024 H X 1024 (V) FULL FRAME CCD IMAGE SENSOR DESCRIPTION The KODAK KAF-1001 Image Sensor is a highperformance, silicon charge-coupled device (CCD) designed for a wide range of image sensing applications in the 400 nm to 1100 nm wavelength band. Common

Contextual Info: TOSHIBA HN2C11FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 2 C 1 1 FU VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS U n it in mm 2.1 + 0.1 • Including Two Devices in U S6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

Contextual Info: 2SA1954 TO SHIBA 2 S A 1 954 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS G ENERAL PURPOSE AMPLIFIER APPLICATIONS SWITCHING AND MUTING SWITCH APPLICATION • Low Saturation Voltage • Large Collector Current VCE (sat) d )= —15mV (Typ.) @ Iq = —10mA/ Iß = —0.5mA

t 541A

Contextual Info: TOSHIBA TC74VH CT540,541 AF/AFW/AFT TOSHIBA CMO S DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74VHCT540AF, TC74VHCT540AFW, TC74VHCT540AFT TC74VHCT541AF, TC74VHCT541AFW, TC74VHCT541AFT OCTAL BUS BUFFER TC74VHCT540AF / AFW / AFT TC74VHCT541 FA / AFW / AFT

SG3000GXH29

Contextual Info: TOSHIBA SG3000GXH23G TOSHIBA GATE TURN-OFF THYRISTOR TENTATIVE SG3000GXH23G Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage V d R M = 4500V R.M.S On-State Current iT RMS = 1200A IT G Q M = 3000A Peak Turn-Off Current Critical Rate of Rise of On-State Current : d i/d t = 400A/ /us

63FBGA

Abstract: KFG1G16Q2B onenand
Contextual Info: OneNAND1Gb KFG1G16Q2B-DEBx FLASH MEMORY KFG1G16Q2B 1Gb OneNAND B-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

OR3LP26B

Abstract: OR3T20 ORT8850 7ba2 diode pb7d
Contextual Info: Preliminary Data Sheet April 2001 PayloadPlus /APC UTOPIA Slave Bridge Introduction Features The PayloadPlus/ATM port controller APC universal test and operations PHY interface for ATM (UTOPIA) slave bridge, also known as the PayloadPlus APC wedge (PAW) or the Atlanta™ interface

Contextual Info: T O S H IB A GT40T101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE G T 4 0 T 1 01 HIGH POWER SWITCHING APPLICATIONS. • • • Unit in mm Enhancement-Mode High Speed : tf=0.4/^s Max. (Iq = 40A) Low Saturation : V qe (sat) = 5.0V (Max.) (Iq = 40A)

Contextual Info: T O SH IB A 2SK2013 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K2 0 1 3 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION Unit in mm 3.2 ± 0 .2 10 ± 0 .3 • High Breakdown Voltage : V j g g = 180V • High Forward Transfer Admittance : |Yfs | = 0 .7 S Typ.)

Contextual Info: T O SH IB A 2SJ378 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt-M O SV 2SJ 378 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS RELAY DRIVE, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 5.0 ± 0 .2 4V Gate Drive

Contextual Info: T O SH IB A 2SC2642 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 7 ^ f ? fi J 7 UHF BAND POWER AMPLIFIER APPLICATIONS • U nit in mm O utput Power : Po = 12W Min. (f= 470MHz, V c c = 12.6V, Pi = 3W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL

Contextual Info: TO SHIBA 2SC5307 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5307 HIGH VOLTAGE SWITCHING APPLICATIONS • High Voltage : V ç;e o = 400V • Low Saturation Voltage : VCE sat - °-4V (Typ.) d c = 20mA, Ig -0 .5 m A ) MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: OneNAND256 KFG5616x1A-xxB6 FLASH MEMORY OneNANDTM Specification Density 256Mb Part No. VCC(core & IO) Temperature PKG KFG5616Q1A-DEB6 1.8V(1.7V~1.95V) Extended 67FBGA(LF) KFG5616Q1A-PEB6 1.8V(1.7V~1.95V) Extended 48TSOP1 KFG5616D1A-DEB6 2.65V(2.4V~2.9V) Extended

sr04

Abstract: marking s4 resistor
Contextual Info: Precision Resistor Networks SR04 & S4 Series Description The SR04 & S4 Series resistor networks are precision-class metal film components featuring tight resistance tolerance and low values of temperature coefficient of resistance TCR . This resistor network package provides both excellent

SR06

Abstract: 75R0
Contextual Info: Precision Resistor Networks SR06 & S6 Series - Precision Voltage Divider Description The Thin Film Technology SR06 & S6 Series Divider offers precision tracking tolerances of 2ppm/°C and ratio tolerances as low as 0.01%. Designed for surface mount applications, the SR06 meets the SOT-23 land pattern and allows multiple source options.