250MM2X0 Search Results

Contextual Info: RN5001 RN5001 U nit in mm M O T O R DRIVE CIRCUIT APPLICATIONS. PO W ER A M PLIFIER APPLICATIONS. P O W ER SW IT C H IN G APPLICATIONS. J53= 1.7MAX. W ith Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and M anufacturing Process

ic power 22E

Abstract: power 22E IC 12E MARKING
Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC3607 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. Unit in mm FEATURES : 1.6MAX 4.6 MAX. . Low Noise Figure, High Gain. 0.4±a05 1.7MAX. . N F = 1 .ldB, IS21e l2=9.5dB f=lGHz MAXI M U M RATINGS (Ta=25°C) SYMBOL CHARACTERISTIC

Contextual Info: SILICON NPN EPITAXIAL TYPE RN5003 Unit in mm M O T O R DRIVE CIRCUIT APPLICATIONS. PO W ER AM PLIFIER APPLICATIONS. P O W ER SW ITCH IN G APPLICATIONS. With Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and Manufacturing Process

2097a

Contextual Info: O rdering number :E N 4 5 3 6 SA\YO j No.4536 ¡j_ _ FP209 NPN Epitaxial Planar Silicon Transistor Driver Applications F eatu res • Composite type with 2 transistors NPN contained in one package,facilitating

Contextual Info: SILICON NPN EPITAXIAL TYPE RN5002 U nit in mm M O T O R DRIVE CIRCUIT APPLICATIONS. PO W ER AM PLIFIER APPLICATIONS. i f 6 MAX- PO W ER SW IT C H IN G APPLICATIONS. 0 .4 ± 0 .05 1.7 MAX. W ith Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and M anufacturing Process

2088a

Contextual Info: Ordering number : EN 3 9 6 1 A N 0 .3 9 6 1 A II_ FP102 PNP Epitaxial Planar Silicon Transistor/ Composite Schottky B arrier Diode SAiYO DC/DC Converter Applications F e a tu re s • Composite type with a PNP transistor and a Schottky barrier diode contained in one package,

Contextual Info: Ordering number : EN5300A N-Channel Silicon MOSFET 2SK2316 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. • Ultrahigh-speed switching. unit: mm 2062A-PCP • Low-voltage drive 2.5V drive . [2SK2316] 1 : Gate 2 : Drain

2SA1204

Abstract: 2SC2884 SA12
Contextual Info: T O S H IB A 2SA 1204 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 12 0 4 AUDIO FREQUENCY AM PLIFIER APPLICATIONS High DC Current Gain : 1i f = 100~320 e Suitable for Output Stage of 1 W atts Amplifier P q = 1~2W (Mounted on Ceram ic Substrate)

dg transistor smd

Abstract: 2SD1624 SMD MARKING SMD npn TRANSISTOR MARKING SMD NPN TRANSISTOR BR 2SD1624
Contextual Info: Transistors SMD Type NPN Epitaxial Planar Silicon Transistor 2SD1624 Features Low collector-to-emitter saturation voltage. Fast switching speed. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 60 V Collector-emitter voltage

smd marking DA

Abstract: marking da 2SD1618 DA SMD SMD BR 08 DA marking
Contextual Info: Transistors SMD Type PNP Epitaxial Planar Silicon Transistors 2SD1618 Features Low collector-to-emitter saturation voltage. Very small size making it easy to provide highdensity, Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage

2SD1621

Abstract: SMD TRANSISTOR MARKING Dd smd transistor 560
Contextual Info: Transistors SMD Type NPN Epitaxial Planar Silicon Transistor 2SD1621 Features Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Large current capacity and wide ASO. Fast switching speed. Very small size making it easy to provide highdensity,

2SD1620

Abstract: transistor smd br
Contextual Info: Transistors SMD Type NPN Epitaxial Planar Silicon Transistor 2SD1620 Features Less power dissipation because of low VCE sat , permitting more flashes of light to be emitted. Large current capacity and highly resistant to breakdown. Excellent linearity of hFE in the region from low

KSC2881

Abstract: hFE CLASSIFICATION Marking
Contextual Info: Transistors SMD Type NPN Epitaxial Silicon Transistor KSC2881 Features Collector-Emitter Voltage : VCEO=120V Current Gain Bandwidth Productor : fT=120MHz Collector Dissipation : PC=1 to 2W in Mounted on Ceramic Board Absolute Maximum Ratings Ta = 25 Parameter

Contextual Info: Transistors SMD Type Product specification 2SD1619 Features Very small size making it easy to provide highdensity, small-sized hybrid IC’ s. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 25 V Collector-emitter voltage

Contextual Info: Transistors Transistor T SMD Type Product specification KSC2881 Features Collector-Emitter Voltage : VCEO=120V Current Gain Bandwidth Productor : fT=120MHz Collector Dissipation : PC=1 to 2W in Mounted on Ceramic Board Absolute Maximum Ratings Ta = 25 Parameter

Contextual Info: Ordering number : ENA0411A 2SC6095 Bipolar Transistor 80V, 2.5A, Low VCE sat , NPN Single PCP http://onsemi.com Applicaitons DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter • Features Adoption of FBET, MBIT process Low collector-to-emitter saturation voltage

Sanyo SF

Abstract: SB07W03P
Contextual Info: Ordering number:EN3616A SB07W03P Schottky Barrier Diode Twin Type • Cathode Common 30V, 700mA Rectifier Applications Package Dimensions · General rectifier. · High frequency rectification (switching regulators, converters, choppers). unit:mm 1239A [SB07W03P]

2SB1134

Contextual Info: Ordering number:2091B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1134/2SD1667 50V/5A Switching Applications Applications Package Dimensions • Relay drivers, high-speed inverters, and other general high-current switching applications. unit:mm 2041A [2SB1134/2SD1667]

2SA1882

Abstract: 2SC4984 ITR04972 ITR04973 ITR04974
Contextual Info: Ordering number:ENN4633A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1882/2SC4984 Low-Frequency General-Purpose Amplifier Applications Applcations Package Dimensions • Low-frequency power amplifier applications. · Medium-speed switching. · Small-sized motor drivers.

2SB1325

Abstract: 2SD1999
Contextual Info: Ordering number : ENN3175A 2SB1325 / 2SD1999 PNP / NPN Epitaxial Planar Transistors 2SB1325 / 2SD1999 Compact Motor Driver Applications Features • • • • Low saturation voltage. Contains diode between collector and emitter. Contains bias resistance between base and emitter.

EN4176

Abstract: SB20-05P marking sh
Contextual Info: Ordering number:EN4176 SB20-05P Schottky Barrier Diode 50V, 2A Rectifier Applications Package Dimensions • High frequency rectification switching regulators, converters, choppers . unit:mm 1244A [SB20-05P] Features · Low forward voltage (VF max=0.55V).

2SB1121

Contextual Info: Ordering number:1787A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1121/2SD1621 High-Current Driver Applications Applications Package Dimensions • Voltage regulators, relay drivers, lamp drivers, electrical equipment. unit:mm 2038 [2SB1121/2SD1621] Features

2SA2015

Abstract: 2SA20 IT00202 2SC5568
Contextual Info: Ordering number:ENN6308 PNP/NPN Epitaxial Planar Silicon Transistors 2SA2015/2SC5568 DC/DC Converter Applications Applications Package Dimensions • Relay drivers, lamp drivers, motor drivers, strobes. unit:mm 2163 Features [2SA2015/2SC5568] · Adoption of MBIT processes.

2SB1324

Abstract: 2SD1998
Contextual Info: Ordering number:EN3130 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1324/2SD1998 Compact Motor Driver Applications Features Package Dimensions • Low saturation voltage. · Contains diode between collector and emitter. · Contains bias resistance between collector and