1001R1BNR Search Results

1001r1bn

Abstract: APT1001R-18NR APT1001RBNR APT1001R1BNR
Contextual Info: O D O S A d van ced R o w er Te c h n o lo g y APT1001RBNR 1000V 11.0A 1.00Q APT.1001R1BNR 1000V 10.5A 1.10D POWER MOS IV® UIS RATED N -C H A N N E L ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS 'd *0M V GS VGSM po 1J' ‘ STG

APT1001R1BNR

Abstract: 1001R1
Contextual Info: A dvanced P ow er Te c h n o lo g y O ü * 'W APT1001RBNR 1000V 11.0A 1.00U 1001R1BNR 1000V 10.5A 1.100 S t R m o s AVALANCHE RATED r ® N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS 'd ^DM V GS V GSM PD V sTG All Ratings: Tc = 25°C unless otherwise specified.

Contextual Info: A d va n ced P o w er Te c h n o l o g y O D APT1001RBNR 1000V 11.0A 1.0012 1001R1BNR 1000V 10.5A 1.100 O S POWER MOS IV® AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M AXIMUM RATINGS Symbol All Ratings: T c = 2 5 °C unless otherwise specified.

APT1001RBNR

Contextual Info: A d van ced P o w er Te c h n o l o g y • O D O S APT1001RBNR 1000V 11.0A 1.000 1001R1BNR 1000V 10.5A 1.10D POWER MOS IV< UIS RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS 'd ' dm V GS VGSM PD All Ratings: Tc = 25°C unless otherwise specified.

210 RBN

Abstract: 1001r1bn 1001RBN NA 1001 APT1001RBNR OA 10 diode APT1001 APT1001R1BNR 1001R1BNR
Contextual Info: ADVANCED P o w er Te c h n o l o g y O D O S APT1001RBNR 1000V 11.0A 1.00Q 1001R1BNR 1000V 10.5A 1.10ÍÍ POWER MOS IV® AVALANCHE RATED N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M AXIMUM RATINGS Symbol VDSS •d ' dm V GS VGSM PD t j ,t stg