1004R2BN
Abstract: apt1004rbn APT1004R2BN 1004rbn
Text: D TO-247 G APT1004RBN S POWER MOS IV 1000V 4.4A 4.00Ω 1004R2BN 1000V 4.0A 4.20Ω N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage
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O-247
APT1004RBN
APT1004R2BN
1004RBN
1004R2BN
O-247AD
1004R2BN
apt1004rbn
1004rbn
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Untitled
Abstract: No abstract text available
Text: ADVANCED POW ER Te c h n o l o g y OD APT1004RBN OS 1000V 4.4A 4.00Í1 1004R2BN 1000V 4.0A 4.20Í1 POWER MOS IV® N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified. APT 1004RBN APT
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APT1004RBN
APT1004R2BN
1004RBN
1004R2BN
APT1004R/1004R2BN
O-247AD
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Untitled
Abstract: No abstract text available
Text: 0 2 5 7 cl 0 cì 0005170 2ST A d van ced P o w er Te c h n o l o g y 0 POWER MOS IV APT1004RBN APT904RBN 1004R2BN APT904R2BN 1000V 900V 1000V 900V 4.4A 4.4A 4.0A 4.0A 4.00Œ 4.00ft 4.20& 4.20Œ N -C H A N N EL ENHANCEM ENT M O DE HIGH VOLTAGE POWER MOSFETS
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APT1004RBN
APT904RBN
APT1004R2BN
APT904R2BN
904RBN
904R2BN
1004R2BN
1004RBN
180NORMALIZED)
APT1004R/904R/1004R2/904R2B
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sml1004r2bn
Abstract: 1004r
Text: SEHELAB PLC bGE D • DDGOLGfl T2b ■ S M L B MOS POWER 4 5^5 'T'- 3e! - I S SML1004RBN 1000V 4.4A 4.0012 SML904RBN 900V 4.4A 4.0012 1004R2BN 1000V 4.0A 4.2012 SML904R2BN 900V 4.0A 4.2012 SEME LAB N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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SML1004RBN
SML904RBN
SML1004R2BN
SML904R2BN
1004RBN
904R2BN
1004R2BN
904RBN
O-247AD
1004r
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1004rbn
Abstract: APT904RBN APT1004 APT1004R2BN APT1004RBN APT904R2BN
Text: 0 2 5 7 cl 0 tì 0 0 0 2 1 7 0 25T A dvanced P o w er Te c h n o l o g y APT1004RBN 1000V 4.4A 4.00Q APT904RBN 900V 4.4A 4.00D 1004R2BN 1000V 4.0A 4.20Q APT904R2BN 900V 4.0A 4.20Q _ POWER MOS IV® N -C H A N N E L ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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APT1004RBN
APT904RBN
APT1004R2BN
APT904R2BN
904RBN
1004RBN
904R2BN
1004R2BN
5S71DT
0Q0E171
APT1004
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1004R2BN
Abstract: APT904RBN Apt904r2bn 1004rbn
Text: O A d va n ced P o w er Te c h n o l o g y D APT1004RBN APT904RBN 1004R2BN APT904R2BN O S POWER MOS IV 1000V 900V 1000V 900V 4.0012 4.0012 4.2012 4.2012 4.4A 4.4A 4.0A 4.0A N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings. Tc = 25°C unless otherwise specified.
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APT1004RBN
APT904RBN
APT1004R2BN
APT904R2BN
1004RBN
904R2BN
1004R2BN
904RBN
/904R/1004R2/904R2BN
10OmS
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