1004R2BN Search Results

Contextual Info: ADVANCED POW ER Te c h n o l o g y OD APT1004RBN OS 1000V 4.4A 4.00Í1 1004R2BN 1000V 4.0A 4.20Í1 POWER MOS IV® N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified. APT 1004RBN APT

1004R2BN

Abstract: apt1004rbn APT1004R2BN 1004rbn
Contextual Info: D TO-247 G APT1004RBN S POWER MOS IV 1000V 4.4A 4.00Ω 1004R2BN 1000V 4.0A 4.20Ω N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage

Contextual Info: 0 2 5 7 cl 0 cì 0005170 2ST A d van ced P o w er Te c h n o l o g y 0 POWER MOS IV APT1004RBN APT904RBN 1004R2BN APT904R2BN 1000V 900V 1000V 900V 4.4A 4.4A 4.0A 4.0A 4.00Œ 4.00ft 4.20& 4.20Œ N -C H A N N EL ENHANCEM ENT M O DE HIGH VOLTAGE POWER MOSFETS

sml1004r2bn

Abstract: 1004r
Contextual Info: SEHELAB PLC bGE D • DDGOLGfl T2b ■ S M L B MOS POWER 4 5^5 'T'- 3e! - I S SML1004RBN 1000V 4.4A 4.0012 SML904RBN 900V 4.4A 4.0012 1004R2BN 1000V 4.0A 4.2012 SML904R2BN 900V 4.0A 4.2012 SEME LAB N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

1004rbn

Abstract: APT904RBN APT1004 APT1004R2BN APT1004RBN APT904R2BN
Contextual Info: 0 2 5 7 cl 0 tì 0 0 0 2 1 7 0 25T A dvanced P o w er Te c h n o l o g y APT1004RBN 1000V 4.4A 4.00Q APT904RBN 900V 4.4A 4.00D 1004R2BN 1000V 4.0A 4.20Q APT904R2BN 900V 4.0A 4.20Q _ POWER MOS IV® N -C H A N N E L ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

1004R2BN

Abstract: APT904RBN Apt904r2bn 1004rbn
Contextual Info: O A d va n ced P o w er Te c h n o l o g y D APT1004RBN APT904RBN 1004R2BN APT904R2BN O S POWER MOS IV 1000V 900V 1000V 900V 4.0012 4.0012 4.2012 4.2012 4.4A 4.4A 4.0A 4.0A N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings. Tc = 25°C unless otherwise specified.