1006 DIODE Search Results
1006 DIODE Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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CUZ30V |
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Zener Diode, 30 V, USC |
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CUZ24V |
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Zener Diode, 24 V, USC |
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CUZ36V |
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Zener Diode, 36 V, USC |
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CUZ20V |
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Zener Diode, 20 V, USC |
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CEZ6V8 |
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Zener Diode, 6.8 V, ESC |
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1006 DIODE Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: DIODES INC PRODUCT CHANGE NOTICE Contact Date: Implementation Date: 7/10/02 7/10/02 Alert Category: Discrete Semiconductor DCS/PCN-1006 Alert Type: PCN #: Obsolescence Notice - Not recommended for design PCN #:2002-1006 TITLE 2N4124 Status Inactive IMPACT |
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DCS/PCN-1006 2N4124 2N4124 QP502-1 QP502-1 | |
BYW98-100
Abstract: stth302c STMicroelectronics marking code date diode 400v 2A ultrafast 1a 200v diode BYW98-150 BYW100-150 1006B BYT01-400
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DSG/AD/1006B DSG/AD/1006 DO-15 DO-201AD DSG/AD/1006B BYW98-100 stth302c STMicroelectronics marking code date diode 400v 2A ultrafast 1a 200v diode BYW98-150 BYW100-150 1006B BYT01-400 | |
pia 6820Contextual Info: D A C 1006/D A C 1007/D A C 1008 \iP C om patible, D ouble-B uffered D to A C onverters General Description The D A C 1006/7/8 are advanced C M O S /S i-C r 10-, 9- and 8-bit accurate m ultiplying DACs w hich are d esigned to inter lace directly w ith the 8080, 8048, 8085, Z-80 and other |
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DAC1006/DAC1007/DAC1008 1006/D 1007/D pia 6820 | |
UFF10005
Abstract: ITO-220AC UFF 100 02 UFF 50 02 uff100-2 UFF100 UFF-100 UFF1002 F1006 F10005
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UFF10005 ITO-220AC -55to F10005 F1006 0V-200V 00V-400V 450us 50mVp-p UFF10005 ITO-220AC UFF 100 02 UFF 50 02 uff100-2 UFF100 UFF-100 UFF1002 F1006 F10005 | |
Contextual Info: UF10005 THRU UF 1006 ULTRA FAST GLASS PASSIVATED RECTIFIERS AC 0.185 4.70 0.154(3.91) 0.415(10.54) Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Idedlly suited for freewheeling diode power factor correction applications Excellent high temperature switching |
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UF10005 -55to 0V-200V 00V-400V 450us 50mVp-p 0V-400V | |
UF10005
Abstract: TO-220AC UF10-005
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UF10005 -55to 0V-200V 00V-400V 450us 50mVp-p 0V-400V UF10005 TO-220AC UF10-005 | |
Contextual Info: 2SD2423 Silicon NPN Epitaxial, Darlington HITACHI Application Low frequency power amplifier Features The transistor with a built-in zener diode o f surge absorb. Outline UPAK 2 ,4 1. 2. 3. 4. 1006 Base Collector Emitter Collector Flange (Typ) (Typi ¿ 3 |
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2SD2423 | |
Contextual Info: ACTM-1006 Tunnel Diode Detector Modules Features: • Contains hermetically sealed modules, internal RF matching, DC return, and RF bypass capacitor. • The video port is protected from static or transient charges. • Input impedance matching. • Models may be chosen for broadband RF |
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ACTM-1006 14dBm 17dBm | |
IN 1004 diodes
Abstract: boonton 230A HP 5082-1003 diode 5082-1001 5082-1001 HP STEP RECOVERY DIODES 1006 diode 1N4456 diode 5082-1002 hp 5082 step recovery
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Contextual Info: ACTM-1006 Tunnel Diode Detector Modules Features: • Contains hermetically sealed modules, internal RF matching, DC return, and RF bypass capacitor. • The video port is protected from static or transient charges. • Input impedance matching. • Models may be chosen for broadband RF |
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ACTM-1006 14dBm 17dBm -20dBm | |
MOC1005
Abstract: MOC1006 VQE 24 led VDE0113 VDE0160 VDE0832 VDE0833 transistor J5X
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E54915 IEC380/VDE0806, IEC435/VDE0805, IEC65/VDE0860, VDE110b, IEC204/ VDE0113, VDE0160, VDE0832, VDE0833, MOC1005 MOC1006 VQE 24 led VDE0113 VDE0160 VDE0832 VDE0833 transistor J5X | |
Contextual Info: ACTM-1006 Tunnel Diode Detector Modules Features: • Contains hermetically sealed modules, internal RF matching, DC return, and RF bypass capacitor. • The video port is protected from static or transient charges. • Input impedance matching. • Models may be chosen for broadband RF |
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ACTM-1006 | |
ACTM-1006N
Abstract: 1006N DATASHEET TUNNEL DIODE M103 M105 M107
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ACTM-1006 14dBm 17dBm -20dBm MIL-E-5400, MIL-STD-202, MIL-E-16400 MIL-STD-202F, -STD-883, MIL-STD-883, ACTM-1006N 1006N DATASHEET TUNNEL DIODE M103 M105 M107 | |
GaAs photodiode EmcoreContextual Info: PRODUCT BRIEF | FEBRUARY 10, 2003 1x12 GaAs PIN Photodiode Array, 8485-1006 Features Data rates of 2.5 Gb/s per channel EMCORE’s 12 channel Gallium Arsenide GaAs PIN photodiode array is designed for multimode fiber applications. Utilizing EMCORE’s own |
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100x150 PD1x12 GaAs photodiode Emcore | |
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VMD2
Abstract: RN242CS VMN2
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900MHz RN141G/S RN152G RN142G/S RN242CS VMD2 RN242CS VMN2 | |
1N4456Contextual Info: H E W LE TT K 7 J I PACKARD High Conductance Diodes Technical Data 5082-1001 5082-1002 5082-1006 1N4456 Features • F ast Switching • Low Capacitance • High Current Capability Description/ Applications The 5082-1000 series of diodes feature planar silicon epitaxial |
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1N4456) MIL-STD-750, 1N4456 | |
Contextual Info: ACTM-1006 TUNNEL DIODE DETECTOR MODULES Frequency Range min Sensitivity (min) Flatness vs. Frequency (max) Typical TSS Typical VSWR Nominal Video Capacitance 2–6 900 0.4 -51 2.5:1 20 GHz mV/mW ±dB dBm Ratio pF NOTES: Maximum input power: +14dBm (3dB guardband for +17dBm possible burnout) |
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ACTM-1006 14dBm 17dBm -20dBm MIL-E-5400, MIL-STD-202, MIL-E-16400 MIL-STD-202F, MIL-STD-883, | |
sony led tv service manual
Abstract: sony led tv electronic diagram led tv service manual SERVICE MANUAL tv sony sony factory codes RM0033 schematic diagram tv sony ZLP32300 ir learning tv remote control schematics cable box
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UM021302-1006 RM0049 RM0050 sony led tv service manual sony led tv electronic diagram led tv service manual SERVICE MANUAL tv sony sony factory codes RM0033 schematic diagram tv sony ZLP32300 ir learning tv remote control schematics cable box | |
MAX328CWEContextual Info: 19-1006:Rev1;10/94 y i / i y i x i v v i Ultra-Low Leakage Monolithic CMOS Analog Multiplexers _ Features ♦ ♦ ♦ ♦ Designed to provide the lowest possible "on" and "off" leakages, these multiplexers switch signals from high |
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MAX328/MAX329 MAX328/MAX329 MAX328 MAX329 DG508/DG509 5fl7bb51 MAX328CWE | |
AP1661
Abstract: 11N65C3 cs 9110 d2 power factor correction boost topology 11N65C mosfet power totem pole CIRCUIT 1N4148 MUR460 mosfet triggering circuit power mosfet triggering circuit
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AP1661 AP1661 600mA 800mA 11N65C3 cs 9110 d2 power factor correction boost topology 11N65C mosfet power totem pole CIRCUIT 1N4148 MUR460 mosfet triggering circuit power mosfet triggering circuit | |
hp 5082 step recovery
Abstract: HP STEP RECOVERY DIODES MIL-STD-750 METHOD 2036 608C 1N4456 5082-1001 5082-1006 5082-1002 FSJ 1002 HP 5082-1006
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1N4456) hp 5082 step recovery HP STEP RECOVERY DIODES MIL-STD-750 METHOD 2036 608C 1N4456 5082-1001 5082-1006 5082-1002 FSJ 1002 HP 5082-1006 | |
LCC-5
Abstract: silicon carbide SHDC624122 SHDC624122P SHDC626052 SHDC626052P SHDC626112 SHDC626112P SCHOTTKY 4A 600V
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58614 relay
Abstract: 58614 relay 58614 58614 tyco CII 58614 MS18-1006 solid state relay 10A DC bi-directional switches FET 89116-006 high speed solid state relay
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MS18-1006 80Vdc MIL-R-28750 MS18-1006 MS18-TBD 58614 relay 58614 relay 58614 58614 tyco CII 58614 solid state relay 10A DC bi-directional switches FET 89116-006 high speed solid state relay | |
LQH32CN100K53
Abstract: LQH32CN4R7M53 LTC3456 MBRM120E MMBT3906
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LTC3456 DN1006 LTC3456 100mV/DIV 200mA/DIV 200mV/DIV dn1006f LQH32CN100K53 LQH32CN4R7M53 MBRM120E MMBT3906 |