VDE0832 Search Results

MOC3001

Abstract: MOC3000 scr optoisolator mr5060 SCR GATE DRIVER IEC204AXK VDE0113 VDE0160 VDE0832 VDE0833
Contextual Info: MOTOROLA • i SEMICONDUCTOR TECHNICAL DATA M OC3000 MOC3001 6-P in D IP O p to is o la to rs S C R Output These devices consist of gallium-arsenide infrared emitting diode optically coupled to a photo sensitive silicon controlled rectifier SCR . They are designed for applications

k 6115

Abstract: dc to dc Optoisolator Optoisolator MOC8080 VDE0160 VDE0832 VDE0833 IEC-204
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MOC8080 6-Pin D IP O p to iso lato r High Tem perature D arlington O utput • • • • • • Convenient Plastic Dual-ln-Line Package High Sensitivity to Low Input Drive Current Low, Stable Leakage Current at Elevated Temperature

4N40

Abstract: MR5060 scr bt series 200 A 4N39 IEC204A VDE0113 VDE0160 VDE0832 VDE0833 scr optoisolator
Contextual Info: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA 4N39 4N40 6-Pin D IP O p to iso la to rs SCR Output These devices consist o f a gallium -arsenide infrared em itting diode optically coupled to a photo sensitive silicon controlled rectifier SCR . They are designed fo r applications

MOC8020

Abstract: MOC8021 VDE0160 VDE0832 VDE0833
Contextual Info: MOTOROLA • I S E M IC O N D U C T O R TECHNICAL DATA M O C8020 MOC8021 6-Pin DIP Optoisolators Darlington Output Each device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. They are designed for use in applications requiring high sensitivity at low input

Y14SM

Abstract: VDE0883 MOC8030 MOC8050 VDE0160 VDE0832 VDE0833 IEC204 IEC-204
Contextual Info: MOTOROLA S E M IC O N D U C TO R TECHNICAL DATA M O C 8030 M O C 8050 6 -P in D IP O p t o is o la t o r s Darlington Output These devices consist of gallium arsenide infrared em itting diodes optically coupled to m onolithic silicon photodarlington detectors.

UJT-2N2646 PIN DIAGRAM DETAILS

Abstract: speed control of dc motor using ujt scr c107m TRANSISTOR equivalent UJT pin diagram 2N2646 1000w inverter PURE SINE WAVE schematic diagram TY6008 triac ot 239 class d 1000w amplifier inverter welder 4 schematic thyristor zo 402
Contextual Info: Theory and Applications Chapters 1 thru 9 Selector Guide Data Sheets Outline Dimensions and Leadform Options Index and Cross Reference E (g ) M OTOROLA THYRISTOR DATA Prepared by Technical Information Center This second edition of the Thyristor Data Manual has been revised extensively to reflect

IEC-204

Abstract: motorola transistor cross IEC204
Contextual Info: GlobalOptoisolator Motorola’s optolsolators satisfy the broad range of regulatory requirements Imposed throughout the world. “Global" optolsolators are y o u r “ passport" to the world marketplace. Motorola 6-PIN DIP Optolsolators Feature: • “Global" Safety Regulatory Approvals: VDE 1 , UL, CSA, SETI, SEMKO, DEMKO, NEMKO,

C8050

Abstract: C3050
Contextual Info: MOTOROLA SEM ICO NDUCTO R TECHNICAL DATA M O C 80 30 M O C 80 50 6-P in D IP O p to is o la to rs Darlington Output These devices co n s is t o f g a lliu m arsenide in fra re d e m ittin g d io d e s o p tic a lly c o up le d to m o n o lith ic silico n p h o to d a rlin g to n d etectors.

IEC-204

Abstract: IEC204 Optoisolators VDE-0860 MOC8104F
Contextual Info: GLOBAL OPTOISOLATORS •<j VTT y There Is no need to worry about meeting the broad range of requirements Imposed throughout the world. With Motorola optolsolators, your marketplace is indeed global. Motorola 6-PIN DIP Optoisolators Feature: • "Global” Safety Regulatory Approvals: VDE 1 , UL, CSA, SETI, SEMKO, DEMKO, NEMKO,

aiou

Abstract: H11AV2 H11AV3 H11AV1A H11AV2A H11AV3A ge h11a transistor BC 176
Contextual Info: MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA H 1 1 A V 1 ,A H 1 1 A V 2 ,A H 1 1 A V 3 ,A 6-Pin DIP Optoisolators Transistor Output Each device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector.

Contextual Info: MOTOROLA SEM ICO NDUCTO R TECHNICAL DATA 4N25 4N25A 4N26 4N27 4N28 6-P in D IP O p to is o la to rs Transistor Output These devices co n sist o f a g a lliu m arsenide infrare d e m ittin g d io d e o p tic a lly co up le d to a m o n o lith ic silico n p h o to tra n s is to r detector.

MOC8060

Abstract: ANSI 60 CE01 Motorola optoisolator lead form options
Contextual Info: MO TO R O L A SC D I O D E S / O P T O b3b7255 0GÔ312Ô G K3MOT? 3^E » Order this data sheet by MQC8060/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MOC8O6O 6-Pin DIP Optoisolator AC Input/Darlington Output This device consists of two gallium arsenide infrared emitting diodes connected in inverseparallel, optically coupled to a silicon photodarlington detector which has integral base-emitter

VDE-0883

Contextual Info: MOTOROLA h S E M IC O N D U C T O R TECHNICAL DATA C N Y 1 7 -1 C N Y 1 7 -2 C N Y 1 7 -3 6-P in D IP O p to is o la to rs T ra n sisto r O u tp u t These devices co nsist o f a g a lliu m arsenide infrare d e m ittin g d io d e o p tic a lly coup le d to a m o n o lith ic silic o n p h o to tra n s is to r detector.

Contextual Info: MOTOROLA m SEM ICO NDUCTO R TECHNICAL DATA M O C 8 1 11 M O C 8112 M O C 81 13 6-P in D IP O p to iso lato rs Transistor Output These d evices co n sist o f a g a lliu m arsenide in fra re d e m ittin g d io d e o p tic a lly co up le d to a m o n o lith ic silico n p h o to tra n s is to r d etector. The in te rn a l base-to-Pin 6 co nn e ctio n

C3883

Abstract: GE H11D2 verin VDE0833 H11D1 GE
Contextual Info: MOTOROLA B SEMICONDUCTOR TECHNICAL DATA H11D1 H11D2 H11D3 H11D4 6-Pin DIP Optoisolators Transistor Output . . . co n s is t o f g a lliu m -a rs e n id e in fra re d e m ittin g d io d e s o p tic a lly c o u p le d to h ig h v o lta g e , s ilico n , p h o to tra n s is to r d e te cto rs in a sta n d a rd 6-pin DIP package. T hey are d esig n ed fo r

730A-02

Abstract: IEC-204 VDE0860 MOC8111 MOC8112 VDE0160 VDE0832 VDE0833 MOC8111 MOTOROLA
Contextual Info: MOTOROLA SEM IC O N D U C TO R TECHNICAL DATA M O C 8 1 11 M OC8112 M OC8113 6-Pin D IP O p to iso lato rs T ra n sisto r O u tpu t These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. The internal base-to-Pin 6 connection

VDE0860

Abstract: IEC435 VDE0113 VDE0160 VDE0805 VDE0832 VDE0833 VDE0883 OPTO-ISOLATOR optoisolator MCT2E
Contextual Info: MOTOROLA • i S E M IC O N D U C TO R TECHNICAL DATA M C T2 M CT2E 6-P in D IP O p to is o la to rs Transistor Output These device s co n s is t o f a g a lliu m arsen id e in fra re d e m ittin g d io d e o p tic a lly c o u p le d to a m o n o lith ic s ilic o n p h o to tra n s is to r dete cto r.

MOC1005

Abstract: MOC1006 VQE 24 led VDE0113 VDE0160 VDE0832 VDE0833 transistor J5X
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MOC1005 M O C 1006 6-P in D IP O p to is o la to rs Transistor O utput These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • • •

H11D1

Abstract: H11D3 VDE0113 VDE0160 VDE0832 VDE0833 VDE0883
Contextual Info: MOTOROLA SE M IC O N D U C TO R TECHNICAL DATA H11D 1 H 11 D 2 H 11 D 3 H 11D 4 6 -P in D IP O p to is o la to rs Transistor Output . . . co n s is t o f g a lliu m -a rs e n id e in fra re d e m ittin g d io d e s o p tic a lly c o u p le d to h ig h v o lta g e ,

CNY17-1 Opto-isolator

Abstract: CNY17-2 Opto-isolator CNY17-2 VDE0160 VDE0832 VDE0833 cny17.2 package details
Contextual Info: MOTOROLA •i SEM ICONDUCTOR TECHNICAL DATA CINIY17-1 CNY17-2 CNY17-3 6-Pin DIP Optoisolators Transistor Output These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • •

H11GX

Abstract: GE H11G1 H11G2 H11G1 IEC204 VDE0113 VDE0160 VDE0832
Contextual Info: MOTOROLA •i SEMICONDUCTOR TECHNICAL DATA H11G1 H11G2 H11G3 6-Pin DIP O ptoisolators Darlington Output . . . consists of gallium -arsenide IREDs optically coupled to silicon photodarlington detec­ tors which have integral base-emitter resistors. The on-chip resistors improve higher

H11B1

Abstract: H11B2 VDE0160 VDE0832 VDE0833
Contextual Info: MOTOROLA •I SEMICONDUCTOR TECHNICAL DATA H11B1 H11B2 H11B3 6-Pin DIP O ptoisolators Darlington Output These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. They are designed for use in applica­

Contextual Info: LED Traffic Signal Series 438 230Vac 200 mm / 300 mm EU4 DIN VDE 0832 Red, Amber, Green and White View of blackened lens type signal when off • High efficiencies as a result of the new High Flux Reflector Technology and Central Light Source • No Colour Phantom when fitted with the blackened smoked effect

Contextual Info: LED Traffic Signal Series 438 230Vac 200 mm / 300 mm EU4 DIN VDE 0832 Red Amber and Green View of blackened lens type signal when off • High efficiencies as a result of the new High Flux Reflector Technology and Central Light Source • No Colour Phantom when fitted with the blackened smoked effect