1006P Search Results

TD01-0756K

Abstract: TG01-1006N TD01-1006K TD01-1506K catalog TDK 83C92 DP8392 MTD492 NE8392C TG01-0756N
Contextual Info: HALO Electronics AUI Isolation Modules Mfg. LAN Chip Part Numbers 16 Pin DIP AUI Isolation Modules 16 Pin SOIC 16 Pin PCMCIA AMD Am7996 TD01-0756K TG01-0756N TG01-0756P Fujitsu MBL8392 TD01-1006K TG01-1006N TG01-1006P Myson MTD492 TD01-1006K TG01-1006N TG01-1006P

TG01-1006N

Abstract: tg01-0756n tg01-0756p 10BASE5 "aui transformers" 1006n catalog TDK 1006P myson mtd492 100-6n
Contextual Info: HALO Electronics AUI Isolation Modules Mfg. LAN Chip Part Numbers 16 Pin DIP AUI Isolation Modules 16 Pin SOIC 16 Pin PCMCIA AMD Am7996 TD01-0756K TG01-0756N TG01-0756P Fujitsu MBL8392 TD01-1006K TG01-1006N TG01-1006P Myson MTD492 TD01-1006K TG01-1006N TG01-1006P

VQ1006

Contextual Info: VN0808L/LS, 1006P Vishay Siliconix N-Channel 80- and 90-V D-S MOSFETs PRODUCT SUMMARY Part Number V (B R ) D S S M ¡ n ( V ) Id (A) r D S (o n ) M a x ( ß ) V G S (th )(V ) 4 @ V Gs = 10 V 0.8 to 2 0.3 4 @ V G S = 10 V 0.8 to 2 0.33 4 @ V q s - 10 V

2410m

Abstract: 0300L 2222LM 0808M 2406M 0201T 0300M 12l 7002
Contextual Info: Tem ic S e m i c o n d u c t o r s ^ S08 < > ^ T052 T0220 ^ TO237 T092 2 lead T092 (3 lead) Low-Power Discretes I I % DMOS FETs - Low-Power MOS N-Channel Enhancement-Mode I , Pm Number 14-Pin Sidebraze (P) and Plastic (J) i- V Q 1001J 30 V Q 1001P • ■

TGM-06-2002

Contextual Info: TGM-06-2002 Module Amplifier 2 GHz - 6 GHz This Module Amplifier offers exceptional performance over the band 2 GHz to 6 GHz with 14 dBm P1dB output power and 12 dB Gain. Teledyne Microwave amplifiers are balanced or feedback designs and manufactured with the latest MIC & MMIC

MDD 1654

Abstract: TMT Isolator wr 90 x band flange waveguide teledyne yig oscillator 10GHz bandpass filter yig oscillator hp m7928 teledyne microwave mbg ferretec filtronic band-pass
Contextual Info: TELEDYNEMICROWAVE the complete microwave solution Table of Contents Company Profile. . . . . . . . . . . . . . . . . . . . . . . . . 5 Sub-Systems. . . . . . . . . . . . . . . . . . . . . . . . . . 7 Diplexers and Multiplexers. . . . . . . . . . . . . . . . . . . . . . . . . . 82

kbpc 36

Abstract: 1004P KBPC10005P KBPC1010P KBPC1001P
Contextual Info: KBPC10005P Thru KBPC1010P 10 AMP SILICON BRIDGE RECTIFIER • FEATURES • • • • Rating to 1000V PRV Ideal for printed circuit board Surge overload rating to 150 Amperes peak Reliable low cost construction utilizing molded plastic technique results in inexpensive product

Contextual Info: CE L E RI T E K S7E J> 1=574SG3 OOOOlOfl m b 3 1 • CLRT 0.5 to 20.0 GHz Microwave Gain Modules T □ Frequency Coverage: 0.5-4 GHz 2-6 GHz 2-18 GHz 6-18 GHz ' 2-8 GHz 2-20 GHz □ MIC & MMIC Gain Modules on Kovar Carriers □ Small Carrier Sizes: 0.560 in. x 0.246 in.

bridge rectifier ic

Abstract: 10A bridge KBPC1002P
Contextual Info: KBPC1000P/W – KBPC1010P/W W TE PO WE R SEM IC O ND UC TO R S 10A HIGH CURRENT BRIDGE RECTIFIER Features ! Diffused Junction A ! ! ! Low Reverse Leakage Current Low Power Loss, High Efficiency Electrically Isolated Epoxy Case for Maximum Heat Dissipation

JE1100

Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Contextual Info: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices

IRF 544 N MOSFET

Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Contextual Info: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no

1006P

Abstract: CGM-04-0001 CGM-04-0002 CGM-04-0003 CGM-04-0004 CGM-04-0005 CGM-04-0006 CGM-04-2001 CGM-06-2001 CGM-06-2002
Contextual Info: 0.5 to 20.0 GHz Microwave Gain Modules □ Frequency Coverage: 0.5-4 GHz 2-6 GHz 2-18 GHz 6-18 GHz 2-8 GHz 2-20 GHz □ MIC & MMIC Gain Modules on Kovar Carriers □ Small Carrier Sizes: 0.560 in. x 0.246 in. 0.680 in. x 0.328 in. □ Suitable for Military and Commercial

Contextual Info: KBPC1000P/W – KBPC1010P/W W TE PO WE R SEM IC O ND UC TO R S 10A HIGH CURRENT BRIDGE RECTIFIER Features ! Diffused Junction A ! ! ! Low Reverse Leakage Current Low Power Loss, High Efficiency Electrically Isolated Epoxy Case for Maximum Heat Dissipation

Contextual Info: KBPC10005P Thru KBPC1010P 10 AMP SILICON BRIDGE RECTIFIER I FEA TU RES • • • • Rating to 1000V PRV Ideal for printed circuit board Surge overload rating to 150 Amperes peak Reliable low cost construction utilizing molded plastic technique results in inexpensive product

Contextual Info: Tem ic VN0808L/M, 1006P Siliconix N-Channel Enhancement-Mode MOS Transistors Product Summary P a rt Num ber V BR DSS M in (V) VN0808L 80 VN0808M 1006P 90 r DS(on) M ax (Q) I d (A) v GS(lji) (Y) 4 @ V GS = 10V 0.8 to 2 0.3 4 @ VGS = 10 V 0.8 to 2 0.33 4 @ VGS = 10 V

Contextual Info: polyfet rf devices F1006 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet" *"* process features gold metal for greatly extended

Contextual Info: KBPC1000P/W – KBPC1010P/W WTE POWER SEMICONDUCTORS 10A HIGH CURRENT BRIDGE RECTIFIER Features ! Diffused Junction A A ! ! ! Low Reverse Leakage Current C Low Power Loss, High Efficiency Electrically Isolated Epoxy Case for ~ Maximum Heat Dissipation D ! Case to Terminal Isolation Voltage 2500V

CPT-18-6036

Abstract: CPT-18-6028 CLT-13-6014 SC2190 CMA-4-0503 Power AMPLIFIER 6012 TLT-18-6006 130 SK10 amplifier 2606 CMA-40-1812
Contextual Info: !MPLIFIERS the complete microwave solution Amplifiers Amplifier Overview With the acquisition of Celeritek’s Defense products, Teledyne now has the ability to produce integrated sub-system amplifiers and standard amplifiers. Teledyne Microwave’s initial Amplifier

MC789P

Abstract: MC946F/MC789P l9945 mc2100 els MC1110G mc787p MC879P SG4002 MC779P MC892P
Contextual Info: GENERAL INFORMATION Index Interchangeability Guide Digital Circuits A p p lications Selector Guide MECL M ECL M C300/M C 350 Series MECL II M C 1000/M C 1200 Series MHTL MC660 Series MTTL M T T L M C500/M C400 Series M T T L II M C2100/M C2000 Series M T T L III M C3000 Series

Contextual Info: b e l / defining a degree of excellence SURFACE MOUNT TRANSFORMERS Electrical Specifications @ 25 C "G" Package Part Number S5530206-IG 0306-IG 0356-IG 0506-IG 0756-IG 1006-IG 0206-PG 0306-PG 0506-PG 0756-PG 1006-PG Turns Ratio +/-5% 111 111 111 111 111

0808L

Abstract: VN0808M TO-226A to-237
Contextual Info: Tem ic VN0808L/M, 1006P S e m i c o n d u c to r s N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS M i n (V ) rDS(on) M a x ( Q ) V GS (th )(V ) 4 @ VG S = 10 V 0.8 to 2 0.3 4 @ V c s - 10 V 0.8 to 2 0.33 4 @ V q S = 10 V

220v AC voltage stabilizer schematic diagram

Abstract: BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 2-6 Fiber Optic Connectors and Accessories . . . . . . . . . . . See Page 121 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 10-122 Fiber Optic Cable, Connectors, and Accessories . . . . . . See Pages 118-122

Contextual Info: 0.5 to 20.0 GHz Microwave Gain Modules □ Frequency Coverage: 0.5-4 GHz 2-6 GHz 2-18 GHz 6-18 GHz 2-8 GHz 2-20 GHz □ MIC & MMIC Gain Modules on Kovar Carriers □ Small Carrier Sizes: 0.560 in. x 0.246 in. 0.680 in. x 0.328 in. □ Suitable for Military and Commercial

CGM-04-0001

Abstract: CGM-04-0002 CGM-04-0003 CGM-04-0004 CGM-04-0005 CGM-04-0006 CGM-04-2001 CGM-06-2001 CGM-06-2002 1C57H
Contextual Info: CELERITEK 57E D • n?HSG3 OOOOlOfl b3L ■ CLRT 0.5 to 20.0 GHz Microwave Gain Modules □ Frequency Coverage: 0.5-4 GHz 2-6 GHz 2-18 GHz 6-18 GHz 2-8 GHz 2-20 GHz □ MIC & MMIC Gain Modules on Kovar Carriers □ Small Carrier Sizes: 0.560 in. x 0.246 in.