1110AVENIDA Search Results

L2083

Contextual Info: polyfet rf devices L2083 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1"1 process features gold metal for greatly extended

Contextual Info: polyfet rf devices F2047 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1111 process features gold metal for greatly extended

Contextual Info: polyfet rf devices F1076 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1"1 process features gold metal for greatly extended

Contextual Info: polyfet if devices F1069 PATENTED GOLD METALIZED General Description Silicon D M O S designed specifically for R F applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1”1 process features gold metal for greatly extended lifetime. Low output capacitance

Contextual Info: polyfet rf devices F1070 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1”1 process features gold metal for greatly extended

Contextual Info: polyfet rf devices F1208 PATENTED GOLD METALIZED General Description Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1”1 process features gold metal for greatly extended lifetime. Low output capacitance

Contextual Info: polyfet rf devices F1107 PATENTED GOLD METALIZED General Description Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"ta process features gold metal for greatly extended lifetime. Low output capacitance

Contextual Info: polyfet rf devices F2001 PATENTED GOLD METALIZED General Description Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"tm process features gold metal for greatly extended lifetime. Low output capacitance

Contextual Info: polyfet rf devices F2211 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1"1 process features gold metal for greatly extended

Contextual Info: polyfet rf devices F2246 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1” 1 process features gold metal for greatly extended

Contextual Info: polyfet rf devices F1520 PATENTED GOLD METALIZED General Description Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1"1 process features gold metal for greatly extended lifetime. Low output capacitance

Contextual Info: polyfet rf devices F1516 PATENTED GOLD METALIZED General Description Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet" ^ process features gold metal for greatly extended lifetime. Low output capacitance

Contextual Info: polyfet rf devices F1210 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1”1 process features gold metal for greatly extended

Contextual Info: polyfet rf devices F9012 PATENTED GOLD METALIZED General Description Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet',tm process features gold metal for greatly extended lifetime. Low output capacitance

Contextual Info: polyfet rf devices P125 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"*"1 process features gold metal for greatly extended

Contextual Info: polyfet rf devices F2201S PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"ta process features gold metal for greatly extended

Contextual Info: polyfet rf devices F2202S PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1”1 process features gold metal for greatly extended

Contextual Info: polyfet rf devices F2002S PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon D M O S designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet',tm process features gold metal for greatly extended

Contextual Info: polyfet rf devices F1077 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"tm process features gold metal for greatly extended

Contextual Info: polyfet rf devices F1535 PATENTED GOLD METALIZED General Description Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"11,1 process features gold metal for greatly extended lifetime. Low output capacitance

Contextual Info: polyfet rf devices F1222 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET ¿P PACKAGE Silicon D M O S designed specifically for R F applications. Immune to forward and reverse bias secondary breakdown "Polyfet"process features gold metal for greatly extended

Contextual Info: polyfet rf devices F1207 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1”1 process features gold metal for greatly extended

Contextual Info: polyfet rf devices F1001C PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1111 process features gold metal for greatly extended

Contextual Info: polyfet rf devices F1006 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet" *"* process features gold metal for greatly extended