Untitled
Abstract: No abstract text available
Text: DIODES INC PRODUCT CHANGE NOTICE Contact Date: Implementation Date: 7/10/02 7/10/02 Alert Category: Discrete Semiconductor DCS/PCN-1008 Alert Type: PCN #: Obsolescence Notice - Not recommended for design PCN #:2002-1008 TITLE BZM5221B – BZM5267B Status Inactive
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DCS/PCN-1008
BZM5221B
BZM5267B
BZM5221
BZM5222
BZM5223
BZM5224
BZM5225
BZM5226
BZM5227
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lp2953
Abstract: 93C46 AN-716 AN-871 NM93C46
Text: AN-1008 Controlling Low Probability “False Write” Data Corruption in Serial EEPROMs Fairchild Application Note 1008 EEPROMs are useful because they are non-volatile memories that can be updated easily and quickly in a system without being physically removed. System designers working with early
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AN-1008
lp2953
93C46
AN-716
AN-871
NM93C46
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EC2C01C
Abstract: TA-3094
Text: Ordering number : ENN6966 EC2C01C Silicon Diffused-Junction Type EC2C01C VCXO & VHF Band VCO Applications Varactor Diode Features High capacitance ratio. CR C1.0V / C4.0V =5.0typ Ultrasmall-sized package(1008), slim package (0.6mm), leadless package. unit : mm
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ENN6966
EC2C01C
EC2C01C]
ECSP1008-2
EC2C01C
TA-3094
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EC2C01C
Abstract: ECSP1008-2 TA-3094
Text: Ordering number : ENN6966A EC2C01C Silicon Diffused-Junction Type EC2C01C VCXO & VHF Band VCO Applications Varactor Diode Features High capacitance ratio. CR C1.0V / C4.0V =5.0typ Ultrasmall-sized package(1008), slim package (0.6mm), leadless package. unit : mm
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ENN6966A
EC2C01C
EC2C01C]
ECSP1008-2
EC2C01C
ECSP1008-2
TA-3094
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SHD125613
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD125613 TECHNICAL DAT DATA SHEET 1008, REV. A HERMETIC POWER SCHOTTKY RECTIFIER Low Forward Voltage Drop 60 V, 35A Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode Features:
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SHD125613
SHD125613
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Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD125613 TECHNICAL DAT DATA SHEET 1008, REV. - HERMETIC POWER SCHOTTKY RECTIFIER Low Forward Voltage Drop 60 V, 35A Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode Features:
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SHD125613
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Untitled
Abstract: No abstract text available
Text: DEVICE PERFORMANCE SPECIFICATION Revision 12 MTD/PS-0502 August 6, 2008 KODAK KAI-1010 IMAGE SENSOR 1008 H X 1018 (V) INTERLINE TRANSFER PROGRESSIVE SCAN CCD CONTENTS Summary Specification . 4
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MTD/PS-0502
KAI-1010
MTD/PS-0502
KAI-1011-CBA
KAI-1010-AAA
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KAI-1001
Abstract: kodak KAI-1010
Text: DEVICE PERFORMANCE SPECIFICATION Revision 13.0 MTD/PS-0502 July 29, 2010 KODAK KAI-1010 IMAGE SENSOR 1008 H X 1018 (V) INTERLINE TRANSFER PROGRESSIVE SCAN CCD CONTENTS Summary Specification . 4
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MTD/PS-0502
KAI-1010
KAI-1011-CBA
KAI-1010-AAA
MTD/PS-1197
D263T
MTD/PS-0502
KAI-1001
kodak
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DIODE marking ED X9
Abstract: KAI-1001
Text: DEVICE PERFORMANCE SPECIFICATION Revision 11 MTD/PS-0502 October 17, 2006 KODAK KAI-1010 KAI-1011 IMAGE SENSOR 1008 H X 1018 (V) INTERLINE TRANSFER PROGRESSIVE SCAN CCD CONTENTS Summary Specification . 4
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MTD/PS-0502
KAI-1010
KAI-1011
DIODE marking ED X9
KAI-1001
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KAI-1001
Abstract: kai-1010aba kai1001 KAI-1010
Text: KAI-1010 IMAGE SENSOR 1008 H X 1018 (V) INTERLINE CCD IMAGE SENSOR JUNE 9, 2014 DEVICE PERFORMANCE SPECIFICATION REVISION 1.1 PS-0021 KAI-1010 Image Sensor TABLE OF CONTENTS Summary Specification . 5
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KAI-1010
PS-0021
D263T
PS-0021
KAI-1001
kai-1010aba
kai1001
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Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD125613 TECHNICAL DAT DATA SHEET 1008, REV. B HERMETIC POWER SCHOTTKY RECTIFIER Low Forward Voltage Drop 60 V, 35A Applications: Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode Features: Soft Reverse Recovery at Low and High Temperature
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SHD125613
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SR latch
Abstract: AP3008
Text: Application Note 1008 Design Consideration with AP3008 Prepared by Wei Feng System Engineering Dept. 1. Introduction MP3 players, cellular phones, etc. All these devices are portable and moveable. To satisfy the requirements for small mounting space constraints, this IC is available
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AP3008
OT-23
AP3008
SR latch
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662k transistor
Abstract: transistor 662k kd 506 transistor 662K SOT-23 HBCS-1100 nal22 74LS75D LM2907 Aspheric Lens NAR2
Text: Optical Sensing for the HBCS-1100 Application Note 1008 Introduction The rapid growth of the digital processing used in commercial, industrial and consumer products, has created the need for sensors that convert physical parameters into electrical signals which may directly
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HBCS-1100
2-25pF
HBCS-1100
CA3130
LM124-1
1N914
1N914
LM124-3
662k transistor
transistor 662k
kd 506 transistor
662K SOT-23
nal22
74LS75D
LM2907
Aspheric Lens
NAR2
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ic7660
Abstract: L7251 diode c23 Regulated Power Supply Schematic Diagram LCM-S02004DSF Adjustable Power Supply Schematic Diagram 220E PRESET schematic diagram on line UPS example schematic diagram power supply 12v 1a irf540 switch
Text: Application Note Power Supply Sequencer with Hot Swap AN023702-1008 Abstract This Application Note describes Zilog’s Z8 Encore! XP based Power Supply Sequencing and Supervisor of a multi-output power supply with Hot Swap. The application note also describes how
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AN023702-1008
AN0237SC01
AN0237SC02
ic7660
L7251
diode c23
Regulated Power Supply Schematic Diagram
LCM-S02004DSF
Adjustable Power Supply Schematic Diagram
220E PRESET
schematic diagram on line UPS
example schematic diagram power supply 12v 1a
irf540 switch
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DN1008
Abstract: LTC3455 AC DC 5V USB charger circuit LTC3405 LTC3406 LTC4053 LTC4411 AC to DC 5V USB charger
Text: advertisement Simple, Efficient, All-in-One USB Power Management IC Solution Design Note 1008 John Shannon Introduction Linear Technology offers a variety of devices that simplify converting power from a USB cable, but the LTC 3455 represents the highest level of functional integration yet
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LTC3455
DN1008
dn1008f
AC DC 5V USB charger circuit
LTC3405
LTC3406
LTC4053
LTC4411
AC to DC 5V USB charger
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Untitled
Abstract: No abstract text available
Text: New 1008-type Molded Lead-less 4-pin Transistor/Diode Series • Overview Unit:mm 0.020 ± 0.010 3 2 0.80 ± 0.05 4 1 0.60 ± 0.05 1.00 ± 0.05 ■ Features 1 ● Assembly process that does not use lead frame. ● Lead Pb -free design and significant reduction in discarded plastics for
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1008-type
1/10th
2SB1462L
2SD2216L
UNRL110
UNRL210
MA4L111
MA4L728
MA4L784
E00081BE
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AN87-1
Abstract: 93C46 national semiconductor 93C46 AN-716 AN-871 C1995 LP2953 NM93C46 AN-1008 national
Text: National Semiconductor Application Note 1008 Robert Stodieck September 1995 EEPROMs are useful because they are non-volatile memories that can be updated easily and quickly in a system without being physically removed System designers working with early EEPROMs quickly learned that in addition to remembering data that they were asked to record EEPROMs
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93C46
Abstract: AN-716 AN-871 LP2953 NM93C46 93C46 national AN-871 national
Text: Fairchild Application Note 1008 Robert Stodieck March 1997 EEPROMs are useful because they are non-volatile memories that can be updated easily and quickly in a system without being physically removed. System designers working with early EEPROMs quickly learned that in addition to remembering data that they were asked to record, EEPROMs
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an012503
93C46
AN-716
AN-871
LP2953
NM93C46
93C46 national
AN-871 national
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BUZ45
Abstract: BUZ 840
Text: SIEMENS SIPMOS Power MOS Transistors BUZ 45 BUZ 45 A BUZ 45 B VDS rn 500 V lD = 8 . 3 . . . 10 A ^DS on = 0-5 . . . 0.8 Q • N channel • Enhancem ent mode • Package: T O -2 04 A A (T O -3 )1) Type Ordering code BUZ 45 C 6 7078-A 1008-A 2 BUZ 45 A C 67078-A 1008-A 3
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078-A
008-A
7078-A
BUZ45
BUZ 840
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KU1008R
Abstract: sv 1302 KU 1002 M KU1002R Diodes de redressement
Text: rectifier diodes > 100 A diodes de redressement^ 100 A Types •o Vrrm ■f s m 10 m s Vf A (V) (A ) <V) THOMSON-CSF / If Ir max ' Case Ti max 100 A / Tease = 140°C SV SV SV SV SV SV 1016 1018 1020 1022 1024 1025 R R R R R R 1002, 1004, 1006, 1008, 1010,
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KU 1002 M
Abstract: All diodes SV2010 KU1008R ku 1008 m Diodes de redressement
Text: rectifier diodes > 100 A diodes de re d re ssem en t^ 100 A Types •o Vrrm ■f s m 10 m s Vf A (V) (A ) <V) THOMSON-CSF / If Ir max ' Case Ti max 100 A / Tease = 140°C SV SV SV SV SV SV 1016 R 1018 R 1020 R 1022 R 1024 R 1025 R 1002, 1004, 1006, 1008,
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TNF300
KU 1002 M
All diodes
SV2010
KU1008R
ku 1008 m
Diodes de redressement
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2D 1002
Abstract: KU1004F 10MSA Diodes de redressement KU1008F
Text: fast recovery rectifier diodes ^ 100 A diodes de redressement rapide ^ 100 A Types 100 A KU KU KU KU KU KU KU KU KU / 1002 1003 1004 1006 1008 1010 1012 1014 1015 Tqqsq F, F, F, F, F, F, F, F, F, >0 Vr r m •f s m 10 ms vF A (V) (A) (V) 60°C Tj / if max
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UN3000
2D 1002
KU1004F
10MSA
Diodes de redressement
KU1008F
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Untitled
Abstract: No abstract text available
Text: L O G IG L M A 1008 8 x 8-bit Multiplier-Accumulator DEVICES INCORPORATED FEATURES □ □ □ □ DESCRIPTION 20 ns M ultiply-Accumulate Time Low Pow er CMOS Technology Replaces Raytheon TMC2208 T w o's Com plem ent or Unsigned O perands The LMA1008 is a high-speed, low
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TMC2208
LMA1008
TMC2208
MIL-STD-883,
48-pin
LMA1008PC40
LMA1008PC20
LMA1008JC40
LMA1008JC20
D-883
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AN716
Abstract: No abstract text available
Text: Fairchild Controlling Low Probability “False Write” Data Corruption in Serial EEPROMs Application Note 1008 S S c K S E M IC O N D U C T O R TM time period, the write operation may be incomplete, I.e. garbage will have been written. If a Vcc glitch occurs in this time period, the
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