MA4L728 Search Results

Contextual Info: MA4L728 Silicon epitaxial planar type Unit: mm For high speed switching For wave detection 0.020±0.010 2 3 0.80±0.05 • Features 1 4 0.60±0.05 1.00±0.05 0.50 0.20±0.03 3 0.30±0.03 ■ Absolute Maximum Ratings Ta = 25°C Parameter 1 4 0.05±0.03 • Low forward voltage V F and good wave detection efficiency η

MA4L728

Abstract: MARKING 103 transistor marking N1
Contextual Info: Schottky Barrier Diodes SBD MA4L728 Silicon epitaxial planar type Unit: mm For high speed switching For wave detection 0.020±0.010 2 0.80±0.05 3 • Features 1 4 0.60±0.05 1.00±0.05 0.50 0.20±0.03 ■ Absolute Maximum Ratings Ta = 25°C Parameter 1

transistor marking N1

Abstract: MA4L728
Contextual Info: Schottky Barrier Diodes SBD MA4L728 Silicon epitaxial planar type Unit: mm For high speed switching For wave detection 0.020±0.010 2 0.80±0.05 3 • Features 1 4 0.60±0.05 1.00±0.05 0.50 0.20±0.03 ■ Absolute Maximum Ratings Ta = 25°C Parameter 1

Contextual Info: Schottky Barrier Diodes SBD MA4L728 Silicon epitaxial planar type Unit: mm For high speed switching For wave detection 0.020±0.010 2 0.80±0.05 3 • Features M Di ain sc te on na tin nc ue e/ d 0.60±0.05 1.00±0.05 0.20±0.03 4 ■ Absolute Maximum Ratings Ta = 25°C

Contextual Info: Schottky Barrier Diodes SBD MA4L728 Silicon epitaxial planar type Unit: mm For high speed switching For wave detection 0.020±0.010 2 M Di ain sc te on na tin nc ue e/ d 0.80±0.05 3 • Features 1 4 Parameter Symbol VR Peak reverse voltage VRM Forward current (DC)

MA4L728

Contextual Info: Schottky Barrier Diodes SBD MA4L728 Silicon epitaxial planar type Unit: mm M Di ain sc te on na tin nc ue e/ d For high speed switching For wave detection 0.020±0.010 2 1 4 1 0.20±0.03 4 • Absolute Maximum Ratings Ta = 25°C Parameter 0.60±0.05 1.00±0.05

Contextual Info: Schottky Barrier Diodes SBD MA4L728 Silicon epitaxial planar type Unit: mm For high speed switching For wave detection 0.020±0.010 2 0.80±0.05 3 • Features 1 4 0.60±0.05 1.00±0.05 0.50 0.20±0.03 ■ Absolute Maximum Ratings Ta = 25°C Parameter 1

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

MA7D52

Contextual Info: Part Number List • Part Number List M Part No. C Part No. Page M Part No. MA2C700 MA2C700A (MA700) 11 MA3D749A (MA700A) 11 MA3D750 MA2C719 (MA719) 13 MA3D750A MA2C723 (MA723) 15 MA3D752 (C Part No.) Page M Part No. (C Part No.) (MA7D49A) 93 MA3X717 (MA717)

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

MA716

Abstract: MA7D50 ma741 MA10799
Contextual Info: Reference • Part Number List The order of Conventional Part Number (C Part No.) M Part No. Page (C Part No.) M Part No. Page (C Part No.) M Part No. Page (MA10700) MA3J700 113 (MA741WK) MA3J741E 119  MA2D760 23 (MA10701) MA3X701 151 (MA742) MA3J742

Contextual Info: Characteristics Quick Reference Guide • SBD for Power Electrical characteristics Ta = 25°C VRRM IF(AV) (V) (A) 30 30 Package Single-chip type VF max. (V) 20 5 0.47 MA3D798 10 3 0.47 MA3D799 TO-220D-B1 (2-pin) 1 40 45 5 50 3 1 TO-220D-A1 (3-pin) 0.55 3

Contextual Info: New 1008-type Molded Lead-less 4-pin Transistor/Diode Series • Overview Unit:mm 0.020 ± 0.010 3 2 0.80 ± 0.05 4 1 0.60 ± 0.05 1.00 ± 0.05 ■ Features 1 ● Assembly process that does not use lead frame. ● Lead Pb -free design and significant reduction in discarded plastics for

1008 transistor

Contextual Info: Panasonic 1008-type Molded Lead-less 4-pin Transistor/Diode Series • Overview Unit:mm These series are transistors and Diodes that are housed in ultra small 4-pin |Q .0 2 0 t0 .0 1 P molded lead-less package of 1.0 mmx0.8 mmx0.6 mm. The PCB mounting area is l/10th of that of conventional Panasonic Mini 3pin packages and high-density integration is possible. And they are designed