1009S Search Results

marking jls

Abstract: marking code g1s
Contextual Info: SIEMENS BF 1009S Silicon N-Channel MOSFET Tetrode • For low-noise, gain-controlled input stages up to 1GHz • Operating voltage 9V • Integrated bias network Droin HF Output + DC E H A 0 7 2 Î5 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Q62702-F1628

Abstract: marking code g1s
Contextual Info: BF 1009S Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 9V • Integrated bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

LL-1009SGM1H-001

Contextual Info: LUCKY LIGHT Features ♦ ♦ ♦ ♦ Normal 10mm diameter package Wide viewing angle General purpose leads Reliable and rugged Package Dimension: Part NO. Lens Color LL-1009SGM1H-001 White Diffused Source Color Red & Green Notes: 1. All dimensions are in millimeters inches .

VPS05178

Contextual Info: BF 1009S Silicon N-Channel MOSFET Tetrode 3
For low noise, high gain controlled input stages up to 1GHz 4
Operating voltage 9V
Integrated bias network 2 Drain AGC HF Input G2 G1 HF Output + DC GND 1 VPS05178 EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!

1009SW

Contextual Info: BF 1009SW Silicon N-Channel MOSFET Tetrode 3
For low noise, high gain controlled 4 input stages up to 1GHz
Operating voltage 9V
Integrated bias network Drain AGC HF Input G2 G1 2 HF Output + DC GND 1 VPS05605 EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Q62702-F1628

Contextual Info: BF 1009S Silicon N-Channel MOSFET Tetrode • For low-noise, gain-controlled input stages up to 1GHz • Operating voltage 9V • Integrated bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

BDP 284

Abstract: BAV 217 Q62702-C2259 BAT 545 Q62702F1240 Q62702-A773 bdp 497 Q62702-C944 Q62702-D339 Q62702-C1529
Contextual Info: SIEMENS List of Types in Alphanumerical Order Type Ordering Code Page BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-01 BAR 15-01 BAR 16-01 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04 BAR 64-05

TDC1009J

Abstract: TDC1009 TDC-1009J adsp1009td ADSP-1009 adsp-1009kd ADSP-1009JD ADSP-1009JX ADSP-1009KX ADSP-1009SX
Contextual Info: ANALOG DEVICES 12x12-Bit CMOS Multiplier/Accumulator ADSP-1009 FEATURES 12 x 12-Bit Parallel M ultiplication/A ccum ulation 150m W P ow er Dissipation w ith C M O S Technology 130ns M ultiply/A ccum ulate Tim e Im proved TDC1009J Second Source A vailable in 64-Pin Ceram ic DIPs, or 68-Term inal

S4 78a DIODE schottky

Abstract: diode S6 78A BC 148 TRANSISTOR DATASHEET transistors BC 543 TRANSISTOR BC 158 BC 158 is npn or pnp 68W npn TRANSISTOR BC s6 78a baw 92
Contextual Info: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

MARKING 68W SOT-23

Abstract: marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23
Contextual Info: Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 14s 15 15s 16 16s 17 17s 1A 1A 1A 1As 1B 1B 1Bs 1Bs 1C 1D 1D 1Ds 1E 1Es 1F 1F 1Fs 1G 1G 1G 1Gs 1J 1J 1Js 1K 1K 1K 1K BAS 125 BAS 125W BAS 125-04 BAS 125-04W BAS 125-05 BAS 125-05W BAS 125-06

Contextual Info: 1009S TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit 1009S High-side Power Switch for Motors, Solenoids, and Lamp Drivers. The 1009S is a monolithic power IC for high-side switches. The IC has a vertical MOS FET output which can be directly driven from a CMOS or

UTM ceramic RESISTOR 212-3

Abstract: AD2033 rs 380sh NyQuist 3 axis DAX 3S OP27GN IC BD 540 LYS HTC Desire 816 Dual SIM HTC A5 12SmV cmos cookbook Monsanto 7 segment displays
Contextual Info: General Information ANALOG DEVICES DATA-ACQUISITION DATABOOK 1984 VOLUME I INTEGRATED CIRCUITS Table of Contents Ordering Guide Q Operational Amplifiers Instrumentation & Isolation Amplifiers c Analog Signal Processing Components m a Voltage References Temperature Measurement Components

c639

Abstract: C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN
Contextual Info: SIEMENS Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04

transistor 1107

Abstract: 4511 mosfet
Contextual Info: CCD area image sensor S10140/S10141 series Low readout noise, high resolution pixel size: 12 m The S10140/S10141 series is a family of back-thinned FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. By using the binning operation, the S10140/S10141 series can be used as a linear image sensor having a

AD542K

Abstract: DAC1136 234L t916
Contextual Info: ANALOG DEVICES 16-and18-Bit HighResolution Convefte Digital-to-Analog : :.]:;* FEATURES DACl138 18'Bit Resolutionand Accuracv 38gV, 1 Part in 262,1441 Nonlinearity1/2LSB max (DACI 138K ExcellentStability Settlinsto 1/2LSB (0.0002%)in 1ops Semiconductors

HF-transistoren

Contextual Info: Transistoren Transistors HF-Transistoren und MMICs MOS Feldeffekt-Transistoren RF-Transistors and MMICs MOS Field-Effect Transistors Type Maximum Ratings Characteristics TA = 25 °C ^DS V Gps dB Fat dB Id mA Aot mW Vqs V Id mA / MHz gts mS Package Lead Code

1109S

Abstract: CCD LINEAR SENSOR 512 CCD S10141 ISV 265 S10140 S10140-1007 S10140-1008 S10140-1009
Contextual Info: IMAGE SENSOR CCD area image sensor S10140/S10141 series Low readout noise, high resolution pixel size: 12 µm S10140/S10141 series is a family of back-thinned FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. By using the binning operation, S10140/S10141 series can be used as a linear image sensor having a long aperture in the direction

Contextual Info: Voltage Reference Selection Guide Com m ercial VOLTAGE Vz V 1.235 o cto7o°c VOLTAGE TOLERANCE MAXIMUM TA= 25°C PART NUMBER TEMPETATURE DRIFT, ppmfC OR mV CHANGE MIL/1ND TEMP OPERATING CURRENT RANGE (OR SUPPLY CURRENT) PACKAGE TYPE IMPORTANT FEATURES ± 0 .3 2 %

1009S

Abstract: TPD1009S
Contextual Info: 1009S TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit 1009S High-side Power Switch for Motors, Solenoids, and Lamp Drivers. The 1009S is a monolithic power IC for high-side switches. The IC has a vertical MOS FET output which can be directly driven from a CMOS or

A 1098 LT

Abstract: LT317A 1009 1009 so-8 LT1009 LT1009 Series 1009I LM136 LT1009CH LT1009IS8
Contextual Info: LT1009 Series 2.5V Reference U FEATURES • ■ ■ ■ ■ ■ DESCRIPTIO Maximum Initial Tolerance: 0.2% Guaranteed Temperature Stability Maximum 0.6Ω Dynamic Impedance Wide Operating Current Range Directly Interchangeable with LM136 for Improved Performance

transistor Bc 540

Abstract: 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BA 895 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 50-02V BAR 50-03W BAR 50-05 BAR 60 BAR 61 BAR 63 BAR 63-02V BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W

sn1009

Abstract: LT1009CZ LT1009 LT317A 1009I LM136 LT1009CH LT1009IS8 LT1009MH LT1009S8
Contextual Info: LT1009 Series 2.5V Reference U FEATURES • ■ ■ ■ ■ ■ DESCRIPTIO Maximum Initial Tolerance: 0.2% Guaranteed Temperature Stability Maximum 0.6Ω Dynamic Impedance Wide Operating Current Range Directly Interchangeable with LM136 for Improved Performance

A3000 DIP 8 PIN

Contextual Info: IMAGE SENSOR CCD area image sensor S10140/S10141 series Low readout noise, high resolution pixel size: 12 µm S10140/S10141 series is a family of back-thinned FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. By using the binning operation, S10140/S0141 series can be used as a linear image sensor having a long aperture in the direction of

Contextual Info: www.martekpower.com 1000WFR series Single & Dual Output DC/DC Converter FEATURES • • • • • • Compact 0.4 Inch Profile Package -25oC to +71oC Operating Temperature Range ±0.2% Line Regulation Short Circuit Protection Low Output Ripple and Noise