1009 Search Results

IS2-1009RH-Q

Abstract: 5962F0052301VYC IS2-1009RH-8 5962F0052301QXC 5962F0052301VXC IS-1009RH ISYE-1009RH-8 ISYE-1009RH-Q TO-206AB SMD TRANSISTOR FL
Contextual Info: IS-1009RH TM Data Sheet Radiation Hardened 2.5V Reference TM The Star*Power Radiation Hardened IS-1009RH is a 2.5V shunt regulator diode designed to provide a stable 2.5V reference over a wide current range. The device is exceptionally stable over a wide current range

marking jls

Abstract: marking code g1s
Contextual Info: SIEMENS BF 1009S Silicon N-Channel MOSFET Tetrode • For low-noise, gain-controlled input stages up to 1GHz • Operating voltage 9V • Integrated bias network Droin HF Output + DC E H A 0 7 2 Î5 ESD: Electrostatic discharge sensitive device, observe handling precaution!

20052a

Abstract: CX20052 20052A SONY CX20052A MC10116 application SONY CX sony 5.1 amp circuit diagram
Contextual Info: CXA1008P/1009P SONY* High-speed Sample and Hold Amplifiers Evaluation Board Available Description CXA1008P/1009P are bipolar IC’s developed for the purpose of sample holding video signals and other signals at high-speed. Features •Maximum sampling frequency

CE5B

Contextual Info: Philips C o m p o n e n ts Document No. 8 5 3 -1 4 3 8 ECN No. 99800 Date of Issue June 14, 1990 Status Product Specification 100982 Hex ECL-TTL Translating Transceiver with Registers ECL Products FEATURES •Typical propagation delay from clock to output: 3.5ns

Contextual Info: 901-10097 NOTES: I. MATERIALS AND FINISHES: BODY - BRASS, GOLD PLATING .000010 MIN THICK CON T AC T - BRASS, GOLD PLATING (.000030 MIN THICK) INSULATOR - PTFE 2. ELECTRICAL: A. I M P E D A N C E : 50 O H M B. F R E Q U E N C Y R A N G E : DC - 6 G H z C. V S W R ( R E T U R N L O S S ) :

Contextual Info: BluetoothTM/802.11 a & b Antenna_ Part Number 100961 Features: * Wide bandwidth and high gain i n a compact size * Enhanced hemispherical pattern improves RF link reliability of portable devices. * Surface- mount design available in tape- and- reel packaging for low- cost automated pick- and-place

MN725

Contextual Info: MN725-2500.0000 Product Data Sheet Revision 100909 MN725-2500.0000 Voltage Controlled SAW Oscillator DESCRIPTION The MN725-2500.0000 Voltage Controlled SAW Oscillator VCSO is a member of Micro Networks’ MN725 series of high performance low noise SAW oscillators designed for the military applications.

TDC1009J

Abstract: TDC1009 TDC-1009J adsp1009td ADSP-1009 adsp-1009kd ADSP-1009JD ADSP-1009JX ADSP-1009KX ADSP-1009SX
Contextual Info: ANALOG DEVICES 12x12-Bit CMOS Multiplier/Accumulator ADSP-1009 FEATURES 12 x 12-Bit Parallel M ultiplication/A ccum ulation 150m W P ow er Dissipation w ith C M O S Technology 130ns M ultiply/A ccum ulate Tim e Im proved 1009J Second Source A vailable in 64-Pin Ceram ic DIPs, or 68-Term inal

5962F0052301VYC

Abstract: 5962F0052301VXC 5962F0052301QXC IS-1009RH BS1361 IS2-1009RH-Q IS2-1009RH-8 TO-206AB 52301V F00523V
Contextual Info: IS-1009RH Data Sheet FN4780.4 January 27, 2006 Radiation Hardened 2.5V Reference Features The Star*Power Radiation Hardened IS-1009RH is a 2.5V shunt regulator diode designed to provide a stable 2.5V reference over a wide current range. • Electrically Screened to SMD # 5962-00523

CSGA

Contextual Info: IMAGE SENSOR CCD area image sensor S7019-1009 1024 x 512 pixels, front-illuminated FT-CCD S7019-1009 is a FT-CCD area image sensor specifically designed for low-light-level detection in scientific applications. In particular, this image sensor is ideally suited for extremely low-light-level detection in such fields as spectroscopy and astronomy.

CSGA

Contextual Info: IMAGE SENSOR CCD area image sensor S7019-1009 1024 x 512 pixels, front-illuminated FT-CCD S7019-1009 is a FT-CCD area image sensor specifically designed for low-light-level detection in scientific applications. In particular, this image sensor is ideally suited for extremely low-light-level detection in such fields as spectroscopy and astronomy.

Contextual Info: ANALOG DEVICES 12*12-Bit CMOS Multiplier/Accumulator ADSP-1009 FEATURES 12 x 12-Bit Parallel Multiplication/Accumulation 150mW Power Dissipation with CMOS Technology 130ns Multiply/Accumulate Time Improved 1009J Second Source Available in 64-Pin Ceramic DIPs, or 68-Terminal

Contextual Info: ANALOG DEVICES 12x12-Bit CMOS Multiplier/Accumulator ADSP-1009A 1.1 Scope. This specification covers the detail requirements for a monolithic CMOS 12 x 12-bit digital multiplier/ accumulator integrated circuit. 1.2 Part Number. The complete part number per Table 1 of this specification is as follows:

1009C

Abstract: S-1009N SC-82AB S-1009C33I-M5T1U S-1009N15I-N4T1U S-1009 S-1009N27I-M5T1U S-1009N22 S-1009N08I-M5T1U S-1009N28I-M5T1U
Contextual Info: Rev.3.0_00 SUPER-LOW CURRENT CONSUMPTION SUPER HIGH-ACCURACY VOLTAGE DETECTOR WITH DELAY CIRCUIT EXTERNAL DELAY TIME SETTING S-1009 Series The S-1009 Series is a super high-accuracy voltage detector developed using CMOS process. The detection voltage is fixed

Contextual Info: HITACHI/-COPTOELECTRONICS} 73 - ^ W 2 0 5“ H 1 IÄ C H 1 H OPTÜEtrC'ïR0Ñ1 CS >" “ DE I 4 4 ^ 2 0 5 DGIGGTS 73C 10095 D 2SK535 ,2SK535 § S ILIC O N N -C H A N N E L M O S FET © Type © T re e HIGH SPEED POWER SWITCHING • FEATURES • High Speed S w itching.

RF106-12

Contextual Info: RF106 900 MHz ISM Band Power Amplifier Data Sheet 100981B August 2002 ii Conexant 100981B 08/26/02 RF106 900 MHz ISM Band Power Amplifier The RF106 is a three-stage class AB-type RF power amplifier for 900 MHz Industrial, Distinguishing Features Scientific, and Medical ISM band applications. It delivers output power proportional ! Class AB-type RF power amplifier

Contextual Info: SM Products Tape & Reel Specifications Tape & Reel Specifications T & R Dimensions - Crystals 4.00± 0.10 Product 1.75 ±0.10 1.50Ø B C D F E 2.00 B+2mm max 120° 2.00 13Ø H G A Meets EIAJ-481A and EIAJ-1009B T & R Dimensions - TCXOs Product A B C D E F

Contextual Info: Total dose testing of the IS-1009RH Voltage Reference Nick van Vonno Intersil Corporation Revision 0 January 2011 Table of Contents 1. 2. 3. 4. 5 6 7 8 9 Introduction Reference Documents Part Description Test Description 4.1 Irradiation facility 4.2 Test fixturing

SHD126434

Contextual Info: SENSITRON SEMICONDUCTOR SHD126434 TECHNICAL DATA DATA SHEET 1009, REV. B SILICON SCHOTTKY RECTIFIER Ultra Low Reverse Leakage 200°C Operating Temperature Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode

CS160

Abstract: AN-1009 CS100 NM93C46 NM93C46N
Contextual Info: AN-1009 EEPROM Endurance Prediction Fairchild Application Note 1009 ENDURANCE convention, Fairchild EEPROM cells are in the “erased” state when they indicate “1” data and written when they indicate “0”. The number of write/erase cycles an EEPROM can withstand

2SA1122

Abstract: Hitachi DSA0076 2SA836
Contextual Info: 2SA1122 Silicon PNP Epitaxial ADE-208-1009 Z 1st. Edition Mar. 2001 Application Low frequency amplifier Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SA1122 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO

NE55

Contextual Info: D R AW IN G U N L E S S OTHERWISE SPECIFIED TOLE RAN CES ARE ± . 0 1 0 ’ NO. REV. 31-1009 C IBIZI MAX.0EE' MATERIAL5! MTG. FLANGE: EDPPER PER A5TM B30I 5UB5TRATE: BERYLLIU M UXIBE EUVERi AL U M IN A U XI D E TAB! BERYLLIUM EDPPER PER D D - E - 5 3 3 R E 5 I 5 T I V E FILM!

Contextual Info: KSR2009 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Sw itching circuit, Inverter, Interface circuit, Driver C ircuit • B uilt in bias R esistor (R =4.7Ki2) • C om plem ent to KSR 1009 ABSOLUTE MAXIMUM RATINGS (T a=25°C)

gmZ2A

Abstract: gmFC1A GMZ3 Genesis gmZ2A GENESIS 1100 Genesis microchip dat Genesis Microchip osd tvga GENESIS
Contextual Info: DATA SHEET gmZ3A DAT-1009-A September 1999 Genesis Microchip 165 Commerce Valley Dr. West, Thornhill, ON Canada L3T 7V8 Tel: 905 889-5400 Fax: (905) 889-0035 1871 Landings Drive •Mountain View •CA •USA •94043 •Tel: (650) 428-4277 •Fax: (650) 428-4288