Untitled
Abstract: No abstract text available
Text: IRF510A Advanced Power MOSFET FEATURES Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175°C Operating Temperature ■ Lower Leakage Current : 10 HA Max. @ V DS= 1 0 0 V ■ Lower RDS(ON) : 0.289£l(Typ.)
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IRF510A
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Untitled
Abstract: No abstract text available
Text: RHRG3070CC, RHRG3080CC, RHRG3090CC, RHRG30100CC H A R R IS / Semiconductor April 1995 File Number 3942.1 30A, 700V - 1000V Hyperfast Dual Diodes Features RHRG3070CC, RHRG3080CC, RHRG3090CC, and RHRG30100CC TA49064 are hyperfast dual diodes with soft recovery characteristics (tp p < 65ns). They have half
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RHRG3070CC,
RHRG3080CC,
RHRG3090CC,
RHRG30100CC
TA49064)
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TP55N
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTP55N06Z/D SEMICONDUCTOR TECHNICAL DATA Advance Information MTP55N06Z TMOS E-FET Pow er Field E ffect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced high vo ltag e TMOS E -F E T is designed to withstand high energy in the avalanche mode and switch efficiently.
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MTP55N06Z/D
TP55N
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Untitled
Abstract: No abstract text available
Text: IRF510A Advanced Power MOSFET FEATURES B V DSS • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175°C Operating Temperature ■ Lower Leakage Current : 10 HA Max. @ V DS= 1 0 0 V
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IRF510A
QQ3b32fl
O-220
00M1N
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Untitled
Abstract: No abstract text available
Text: NEW PRODUCT NEW PRODUCT NEW PRODUCT UGF10FCT AND UGF10GCT ULTRAFAST SOFT RECOVERY RECTIFIER Reverse Voltage - 300 to 400 Volts Forward Current - 10.0 Amperes FEATURES ITO-22QAB ♦ Plastic package has Underwriters Laboratories Flammability Classification 94V-0
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UGF10FCT
UGF10GCT
ITO-22QAB
ITO-220AB
MIL-STD-750.
50AVs
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RG911
Abstract: No abstract text available
Text: Advanced IRFW /IZ44A P o w e r M O SjflfcT FEATURES B^dss - 60 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology RDS on = 0 .0 2 4 0 ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175j ■ Lower Leakage Current : 10 nA (Max.) @ VOS = 60V
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/IZ44A
RG911
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APC UPS es 500 CIRCUIT DIAGRAM
Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
Text: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.
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ADE-408
50502C
APC UPS es 500 CIRCUIT DIAGRAM
sk 100 gale 065 tf
2SK1058 MOSFET APPLICATION NOTES
APC UPS CIRCUIT DIAGRAM es 725
General Instrument data book
2SK2264
ESI 252 impedance meter
transistor bf 175
PF0144
2SK212
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Untitled
Abstract: No abstract text available
Text: SSR/U1N50A Advanced Power MOSFET FEATURES B V DSs = 500 V • Avalanche Rugged Technology II O ■ Lower Input Capacitance CO ^DS on = ■ Rugged Gate Oxide Technology 5 .5 Î 2 A ■ Improved Gate Charge ■ Extended Safe Operating Area D-PAK ■ Lower Leakage Current : 10 uA (Max.) @ V DS = 500V
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SSR/U1N50A
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Untitled
Abstract: No abstract text available
Text: Si GEC P L E S S E Y j a n u a r y i 996 SEM IC OND UCT OR S DS4273-2.3 TF447.A FAST SWITCHING THYRISTOR KEY PARAMETERS v DRM 1200V I 470A T RMS 5000A ^TSM 200V/|XS dV/dt 500A/(iS dl/dt 20jis APPLICATIONS • High Power Inverters And Choppers. ■ UPS. ■
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DS4273-2
TF447.
20jis
TF44712A
TF447
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1RFZ14
Abstract: AN-994 IRFZ14 IRFZ14S SMD-220 GIJ rectifier smd marking 3xf GIJ diode
Text: PD-9.507B International »»Rectifier ÌRFZ14 HEXFET Power M O SFET • • • • • Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements ^ D SS- 60V R D S on - 0 .2 0 0 , lD = 10A Description
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IRFZ14
O-220
T0-220
1RFZ14
AN-994
IRFZ14S
SMD-220
GIJ rectifier
smd marking 3xf
GIJ diode
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hr 4120 diode
Abstract: 75637S 75637P
Text: HUF75637P3, HUF75637S3S in te f s il D ata S h e e t O c to b e r 1999 F ile N u m b e r 4721.1 44A, 100V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET Packaging Features JEDEC TO-22QAB JEDEC TO-263AB • Ultra Low On-Resistance ' SOURCE DRAIN GATE rDS ON = 0-030£i. V q s - 10V
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HUF75637P3,
HUF75637S3S
O-22QAB
O-263AB
HUF75637P3
HUF75637P3
HUF75637S3S
O-220AB
O-263AB
hr 4120 diode
75637S
75637P
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RUR30100
Abstract: RURP30100 fast recovery diode 1000v 30A
Text: RURP30100 interdi Data Sheet Ja nu a ry 2000 File N u m b e r 2877.4 30A, 1000V Ultrafast Diode Features The RURP30100 is an ultrafast diode with soft recovery • U Itrafast with Soft • Operating Temperature. 175°C
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RURP30100
RURP30100
110ns)
TA09904.
O-22QAC
RUR30100
RUR30100
fast recovery diode 1000v 30A
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2188A
Abstract: TT 2188
Text: MITSUBISHI Neh POWER MOSFET FS5UMH-2 HIGH-SPEED SWITCHING USE FS5UMH-2 OUTLINE DRAWING Dimensions in mm 10.5M A X . , 4.5 1.3 Jl • 2.5V DRIVE • V dss .•■■100V f' GATE D R A IN SOURCE D R A IN
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O-220
1CH23
2188A
TT 2188
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diode sy 345
Abstract: T0220AB
Text: Philips Semiconductors Objective specification PowerMOS transistor GENERAL DESCRIPTION PHP3055E QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and
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PHP3055E
T0220AB
100A4is;
diode sy 345
T0220AB
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Untitled
Abstract: No abstract text available
Text: DCR820SG M IT E L Phase Control Thyristor SEMICONDUCTOR Supersedes March 1998 version, DS4214 - 3.4 DS4214 - 4.0 Features • Double Side Cooling. • High Surge Capability. March 1999 Key Parameters V 6500V " drm 310A Jt AV 6000A i SM dVdt* 1000V/HS dl/dt
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DS4214
DCR820SG
000V/HS
100A4IS
DCR820SG65
DCR820SG64
DCR820SG63
DCR820SG62
DCR820SG61
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4655M52
Abstract: No abstract text available
Text: • International gig Rectifier MA5S452 DG15SD2 TTD « I N R PD-9.756 IRFP264 INTERNATIONAL RE C T IF IE R HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements
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MA5S452
DG15SD2
IRFP264
GD155D7
4655M52
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1RFR5305
Abstract: 0V520 C401 diode
Text: International tXo r Rectifier W X V W L II II t? I • • • • • • pd9.uo2a IRFR/U5305 HEXFET Power MOSFET Ultra Low On-Resistance Surface Mount 1RFR5305 Straight Lead (IRFU5305) Advanced Process Technology Fast Switching Fully Avalanche Rated
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1RFR5305)
IRFU5305)
IRFR/U5305
100US
C-403
C-404
1RFR5305
0V520
C401 diode
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Untitled
Abstract: No abstract text available
Text: SSS4N90A Advanced Power MOSFET FEATURES BVdss = 900 V • ■ Avalanche Rugged Technology Rugged Gate Oxide Technology ^DS on = 5 .0 ■ Lower Input Capacitance lD = 2.5 A ■ ■ ■ Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25jiA (Max.) @ Vos = 900V
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25jiA
SSS4N90A
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting using ’trench’ technology.
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BUK9610-30
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pj 66 diode
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor Isolated version of BUK452-100A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS ,
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BUK452-100A/B
BUK472-100A/B
BUK472
-100A
-100B
OT186A
pj 66 diode
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IRF650A
Abstract: No abstract text available
Text: IR F650A Advanced Power MOSFET FEATURES B V dss = 200 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n = ■ Lower Input Capacitance lD = 28 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A (M a x .) @ V DS = 200V
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irf650a
30-OTO
T0-220
QQ3b32fl
3b32ti
O-220
500MIN
DD3b33D
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OM6017SA
Abstract: OM6019SA OM6020SA MOSFET POWER AMP
Text: OM6017SA OM6019SA OM6Q18SA OM6020SA POWER MOSFET IN HERMETIC ISOLATED TO-254AA PACKAGE 100V Thru 500V, Up To 25 Amp, N-Channel M O SFET In Herm etic Metal Package FEATURES • • • • • • Isolated Hermetic Metal Package Fast Switching L ow R DS on
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OM6017SA
OM6019SA
OM6Q18SA
OM6020SA
O-254AA
MIL-S-19500,
OM6020SA
MOSFET POWER AMP
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SSR -100 DD
Abstract: SSR -25 DD
Text: Advanced SSR/U1N50A Power MOSFET FEATURES BVDSS - 500 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n = ■ Lower Input Capacitance ■ Improved Gate Charge lD = 1-3 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 nA (Max.) @ V DS = 500V
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SSR/U1N50A
SSR -100 DD
SSR -25 DD
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Untitled
Abstract: No abstract text available
Text: Advanced SSW/I1N50A Power MOSFET FEATURES BV DSS = 500 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^D S o n - ■ Lower Input Capacitance In = 1-5 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 I^A (Max.) @ V DS = 500V
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SSW/I1N50A
IRFW/I640A
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