100B CHOKE Search Results

Contextual Info: LSiirautH" 80220/80221 10OBASE- TX/1OBASE- T Ethernet Media Interface Adapter 98184 This document is an LSI Logic document. Any reference to SEEQ Technology should be considered LSI Logic. Features • Single Chip 100B ase-T X /1 OBase-TPhysical Layer Note: C heck fo r latest Data Sheet revision

two4b

Abstract: EN 593 10 35L CAP count basie mdc 1200 Encoder/Decoder Seeq Technology LINK100 T40E 8025g 4B5B decoder
Contextual Info: 80220/80221 Technology Incorporated 100BASE-TX/1OBASE-T Ethernet Media Interface Adapter DATA SHEET Features • Single Chip 100B ase-TX /10B ase-TP hysical Layer Solution ■ ■ ■ ■ ■ ■ ■ D ual Speed -1 0 0 /1 0 Mbps H alf A n d Full Duplex M il Interface To Ethernet Controller

100uF capacitor

Abstract: FERRITE TRANSFORMER capacitor 471 RF Resistor 50 OHM 470 resistor 470 ohm resistor 393m RF400 100b choke FERRITE TRANSFORMER 3932
Contextual Info: DB-3932-30 BOM Component ID XFer1 R1 R2, R3 R4,R5 C1,C2,C3,C4 C5, C8 C6, C9 C7,C10 C11, C12 L1,L2 L3 Bal1 torroid torroid RF in, RF out SD3932 Board Description 9:1 transformer Resistor Resistor Resistor Capacitor Capacitor Capacitor Capacitor Capacitor SPLIT CHOKE

DIODE 4005

Abstract: DIODE aay 49 100b choke M175 SD1660 AAY49 GE DIODE
Contextual Info: SD1660 RF & MICROWAVE TRANSISTORS 800/900 MHz APPLICATIONS . . . . . . 860 - 900 MHz 24 VOLTS CLASS AB PUSH PULL INTERNAL INPUT MATCHING DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION FOR HIGH RELIABILITY DIFFUSED EMITTER BALLAST

DIODE aay 49

Abstract: 100MF 63V GE DIODE diode l19 AAY49 M175 SD1660 si diode
Contextual Info: SD1660 RF & MICROWAVE TRANSISTORS 800/900 MHz APPLICATIONS . . . . . . 860 - 900 MHz 24 VOLTS CLASS AB PUSH PULL INTERNAL INPUT MATCHING DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION FOR HIGH RELIABILITY DIFFUSED EMITTER BALLAST

SD1680

Abstract: M175 push pull class AB RF linear DIODE aay 49 j 4005
Contextual Info: SD1680 RF & MICROWAVE TRANSISTORS 800/900 MHz APPLICATIONS . . . . . . 915 - 960 MHz 24 VOLTS CLASS AB PUSH PULL INTERNAL INPUT MATCHING DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION FOR HIGH RELIABILITY DIFFUSED EMITTER BALLAST

VK200 FERRITE

Abstract: 22 J.63 capacitor vk-200 ferrite choke VK-200 M142 SD4017
Contextual Info: SD4017 RF & MICROWAVE TRANSISTORS 806-960 MHz CELLULAR BASE STATIONS . . . . . . GOLD METALLIZATION DIFFUSED EMITTER BALLASTING INTERNAL INPUT MATCHING DESIGNED FOR LINEAR OPERATION HIGH SATURATED POWER CAPABILITY COMMON EMITTER CONFIGURATION POUT = 30 W MIN. WITH 7.5 dB GAIN

VK200 ferrite

Abstract: 22 J.63 capacitor e35r SD4017 vk-200 ferrite choke J.63 capacitor M142 VK-200 120142 8569
Contextual Info: SD4017 RF & MICROWAVE TRANSISTORS 806-960 MHz CELLULAR BASE STATIONS . . . . . . GOLD METALLIZATION DIFFUSED EMITTER BALLASTING INTERNAL INPUT MATCHING DESIGNED FOR LINEAR OPERATION HIGH SATURATED POWER CAPABILITY COMMON EMITTER CONFIGURATION POUT = 30 W MIN. WITH 7.5 dB GAIN

SD1680

Abstract: DIODE aay 49 Electronic ballast 100W push pull class AB RF linear SD168 M175 GE DIODE
Contextual Info: SD1680 RF & MICROWAVE TRANSISTORS 800/900 MHz APPLICATIONS . . . . . . 915 - 960 MHz 24 VOLTS CLASS AB PUSH PULL INTERNAL INPUT MATCHING DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION FOR HIGH RELIABILITY DIFFUSED EMITTER BALLAST

K 4005 transistor

Contextual Info: f Z 7 ^ 7 # . S G M S - 1 H 0 M » Ê t H ê r a M S 0 N SD1660 O g ! RF & MICROWAVE TRANSISTORS 800/900 MHz APPLICATIONS . . . . . . . . . > 860 - 900 MHz 24 VOLTS CLASS AB PUSH PULL INTERNAL INPUT MATCHING DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY

Contextual Info: 57. SGS-THOMSON SD4017 •m RF & MICROWAVE TRANSISTORS 806-960 MHz CELLULAR BASE STATIONS GOLD METALLIZATION DIFFUSED EMITTER BALLASTING INTERNAL INPUT MATCHING DESIGNED FOR LINEAR OPERATION HIGH SATURATED POWER CAPABILITY COMMON EMITTER CONFIGURATION P o u t = 30 W MIN. WITH 7.5 dB GAIN

VK200 FERRITE

Abstract: 8569 222x
Contextual Info: {ZT SGS-THOMSON ^ 7 # . [ lQ g [E } ( Q iL i( g T ^ ( Q M ( g ls S D 4 0 1 7 RF & M I C R O W A V E T R A N S I S T O R S 8 0 6 - 9 6 0 MHz C E L L U L A R BASE S T A T I O N S • GO LD M ETALLIZATIO N ■ DIFFUSED EM ITTER BALLASTING ■ INTERNAL INPUT M ATCHING

Contextual Info: f Z 7 S G S -T H O M S O N ^ 7 # . K M SD1680 « « ® « ! RF & M I C R O W A V E T R A N S I S T O R S 8 0 0 /9 0 0 M H z A P P L I C A T I O N S • . ■ . ■ ■ . ■ ■ . 915 - 960 MHz 24 VOLTS CLASS AB PUSH PULL INTERNAL INPUT MATCHING DESIGNED FOR HIGH POWER LINEAR

Contextual Info: S G S - T H Ç O M S O N IlO T M D Ê i ï. SD1680 RF & MICROWAVE TRANSISTORS 800/900 MHz APPLICATIONS > . . . . . . . . . 915 - 960 MHz 24 VOLTS CLASS AB PUSH PULL INTERNAL INPUT MATCHING DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY

SD4701

Abstract: VK-200 200 pF air variable capacitor
Contextual Info: SD4701 RF & MICROWAVE TRANSISTORS CELLULAR BASE STATION APPLICATIONS . . . . DESIGNED FOR CLASS AB LINEAR OPERATION COMMON EMITTER INTERNAL INPUT/OUTPUT MATCHING 26 VOLT, 960 MHz PERFORMANCE: POUT = 45 W MIN. GAIN = 8.5 dB MIN. COLLECTOR EFFICIENCY 50% MIN.

sd1483

Abstract: GP LL3
Contextual Info: SGS-THOMSON ^ 7 # . » » I l L ll g r a W D SD1483 g i RF & MICROWAVE TRANSISTORS FM BROADCAST APPLICATIONS > 88 - 108 MHz . 28 VOLTS . EFFICIENCY 60% . COMMON EMITTER . GOLD METALLIZATION > P o u t = 300 W MIN. WITH 10 dB GAIN PIN CONNECTION 1 1 2 DESCRIPTION

BLV 730

Abstract: capacitor polyester philips transposers Philips 2222 capacitor 2222 capacitor Philips 2222 030 capacitor philips Philips DC Power Amplifier 380 Philips 2222-030 L6 PHILIPS BLV33
Contextual Info: APPLICATION NOTE Wideband class-A power amplifier for TV transposers in band I 50 − 80 MHz with two transistors BLV33 NCO8207 Philips Semiconductors Wideband class-A power amplifier for TV transposers in band I (50 − 80 MHz) with two transistors BLV33

Contextual Info: SGS-mOMSON ;ti gra s o(êi SD4701 RF & MICROWAVE TRANSISTORS CELLULAR BASE STATION APPLICATIONS . DESIGNED FOR CLASS AB LINEAR OPERATION . COMMON EMITTER • INTERNAL INPUT/OUTPUT MATCHING ■ 26 VOLT, 960 MHz PERFORMANCE: P o u t = 45 W MIN. GAIN = 8.5 dB MIN.

Contextual Info: fZ 7 S G S - T H O M S O N SD4701 RF & MICROWAVE TRANSISTO RS CELLULAR BASE STATION APPLICATIONS • DESIGNED FOR CLASS AB LINEAR OPERATION ■ COMMON EMITTER . INTERNAL INPUT/OUTPUT MATCHING ■ 26 VOLT, 960 MHz PERFORMANCE: P o u t = 45 W MIN. GAIN = 8.5 dB MIN.

K 4005 transistor

Abstract: ISD1660 ATC100B 47JJ
Contextual Info: f Z 7 SGS-THOMSON ^ 7 # . K M SD1660 « « ® « ! RF & M I C R O W A V E T R A N S I S T O R S 8 0 0 /9 0 0 M H z A P P L I C A T I O N S • . ■ . ■ ■ . ■ ■ . 860 - 900 MHz 24 VOLTS CLASS AB PUSH PULL INTERNAL INPUT MATCHING DESIGNED FOR HIGH POWER LINEAR

FERRITE TRANSFORMER 3932

Abstract: DB-3932-30 393M M177 RF400-9 SD3932 100b choke IMD-30 IMD10
Contextual Info: DB-3932-30 Evaluation board using 1x SD3932 for HF transmitters Features • Excellent thermal stability ■ Frequency: 2 - 30 MHz ■ Supply voltage: 100 V ■ Output power: 400 W ■ Input power 4 W max. ■ Efficiency: 62 % - 68 % ■ IMD at 400 WPEP < -25 dBc

CAT-5 Sdi IC

Contextual Info: PRELIMINARY AM D ii Am79C874 NetPHY -1LP Low Power 10/100-TX/FX Ethernet Transceiver DISTINCTIVE CHARACTERISTICS • 10/100BASE-TX Ethernet PHY1OOBASE-FX fiber optic support ■ Typical power consumption of 0.3 W ■ Sends/receives data reliably over cable lengths

ISO-14001

Abstract: TS-16949
Contextual Info: Dual Port SMD 10/100Base-T Isolation Transformer Modules Features • Low profile and light weight 10/100 BaseT modules facilitate pick and place compatability and speed of placement • Meets requirements of IEEE 802.3u and ANSIX3.263 • Consistent and reliable coplanarity

TED-400

Abstract: 10/100 BASE TRANSFORMERS LAN COMPONENTS ISO-14001 TS-16949
Contextual Info: Dual Port SMD 10/100Base-T Isolation Transformer Modules Features • Low profile and light weight 10/100 BaseT modules facilitate pick and place compatability and speed of placement • Meets requirements of IEEE 802.3u and ANSIX3.263 • Consistent and reliable coplanarity